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    LSI1012XT1G Search Results

    LSI1012XT1G Datasheets Context Search

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    SC-75

    Abstract: SC-75A SC-89
    Contextual Info: LESHAN RADIO COMPANY, LTD. N-Channel 1.8-V G-S MOSFET LSI1012XT1G FEATURES D D D D D D 3 TrenchFETr Power MOSFET: 1.8-V Rated Gate-Source ESD Protected: 2000 V High-Side Switching Low On-Resistance: 0.7 W Low Threshold: 0.8 V (typ) Fast Switching Speed: 10 ns


    Original     		LSI1012XT1G SC-89 463C-01 463C-02. SC-75 SC-75A SC-89 PDF

    LSI1012XT1G

    Abstract: SC-89 SC-75 SC-75A
    Contextual Info: LESHAN RADIO COMPANY, LTD. N-Channel 1.8-V G-S MOSFET LSI1012XT1G FEATURES D D D D D D TrenchFETr Power MOSFET: 1.8-V Rated Gate-Source ESD Protected: 2000 V High-Side Switching Low On-Resistance: 0.7 W Low Threshold: 0.8 V (typ) Fast Switching Speed: 10 ns


    Original     		LSI1012XT1G SC-89 463C-01 463C-02. LSI1012XT1G SC-89 SC-75 SC-75A PDF

    LSI1012XT1G

    Contextual Info: LESHAN RADIO COMPANY, LTD. LSI1012XT1G S-LSI1012XT1G N-Channel 1.8-V G-S MOSFET FEATURES D D D D D D D TrenchFETr Power MOSFET: 1.8-V Rated Gate-Source ESD Protected: 2000 V High-Side Switching Low On-Resistance: 0.7 W Low Threshold: 0.8 V (typ) Fast Switching Speed: 10 ns


    Original     		LSI1012XT1G S-LSI1012XT1G AEC-Q101 SC-89 463C-01 463C-02. LSI1012XT1G PDF