LSE 1013 Search Results

5K13

Abstract: 5k33 diode MC1.5K24 5k24 MD1.5K47 5k56 MC1.5K47 MD1.5K36 5-K68 5K43
Contextual Info: GENI INSTR/ POWER 5bE ]> • ^ General 5^* Semiconductor • Industries, Inc. 30=10137 0004^74 0^5 « G I C l T ransZ o r b ' T V S CH IPS MD1.5K & MC1.5K Series D ESCRIPTION This TransZorb T V S chip series is designed for hybrid, smart card and connector

2AX SMD

Abstract: smd diode marking d06 MANUAL 1023N mcl d01 pal 002 S1021 smd diode UJ 64 A LR38516 hF 6591 ccd sharp
Contextual Info: SHARP SPEC No. I SSUE: E L 0 9 9 1 7 2 Sep. 19 1997 S P E C I F I C A T I O N S Product Type M od el N o. T ilin g IC 1 /4 ”35QK,1/3”350K/380K/450K p ix e ls CCD L R 3 8 5 1 6_ j&This s p e c ific a tio n s contains 37 pages including the cover and appendix.

Contextual Info: SÌ1413EDH New Product Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY Vd s (V) -2 0 • TrenchFET Pow er M O S FE T S : 1.8-V Rated • E S D Protected: 3000 V • Thermally Enhanced SC -70 Package Id (A) r DS(on) (Q) 0.115 @ V G S = -4 .5 V

RSN5474

Abstract: RSN54H74
Contextual Info: CIRCUIT TYPES RSH5474, RSN54H74 DUAL D-TYPE EDGE-TRIGGERED FLIP-FLOPS functional block diagram each flip-flop logic H FLAT P A C k a g e (t o p v i e w ) © © © © © © 1 1D 1 CLOCK_ C LEAR Vcc 2 C LE A R 2D 2 CLOCK positive logic: Low in p u t to preset sets Q to high level

Contextual Info: SAMSUNG E L E C T R O N I C S MJD44H11 42E INC 7^4145 D 000=1013 T S S Î 1 G K NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE POWER AND SWITCHINGSUCH AS OUTPUT OR DRIVER STAGES IN APPLICATIONS. D-PACK FOR SURFACE MOUNT APPLICATIONS • L e a d F o rm e d fo r S u rfa c e M o u n t A p p lic a tio n s N o S u ffix

HIGH CURRENT PLASTIC SILICON RECTIFIER

Contextual Info: 3890137 GENL INSTR, POWER 87D 02209 36=10137 OOOaSCH ñ | ~ ;BÍ60 ^ ^ IN IA T U R E Í ¿ ^ ^ ^ ^ ^ ^ Í E R % C T I F I E R S GENERAL INSTRUMENT V O LTA G E RANG E 20 to 60 Volts CURR EN T 1.0 Am pere DO-41 FEATURES • Low cost • Plastic material used carries Underwriters Laboratory

pm4550c

Abstract: PM4550CSILICON
Contextual Info: HIT ACHI/-LOPTOELECTRONICS} 73 4496205 H I T A C H I / OPTOELECTRONICS ' DE I 4 4 ^ 2 0 5 73C 10133 PM4550C-SILICON N-CHANNEL MOS FET MODULE i(7), D T-3^-/5 54Í0.5 54±0.5 D2 HIGH SPEED POWER SW ITCHING S2 DD1G133 D1 X7). SI St§ • FEATURES -sii- •

Contextual Info: HIGH VOLTAGE, HIGH MEGOHM PRECISION FILM RESISTORS 1/8W TO 16 WATT RH SERIES FEATURES • Industry’s most precise high-voltage resistors! Available to 10 teraohm 1013Q ! S ta n d a rd T e m pe rature C o e ffic ie n ts as low as ± 25 ppm ( ± 1 0 ppm a va ila b le on lim ite d value range)

Contextual Info: I27117 rev. A 01/2000 SERIES IRK.136, .142, .162 NEW INT-A-pak Power Modules THYRISTOR/DIODE and THYRISTOR/THYRISTOR 135 A 140 A 160 A Features High Voltage Electrically Isolated by DBC Ceramic Al 2O 3 3500 V RMS Isolating Voltage Industrial Standard Package

UFN230

Contextual Info: POWER MOSFET TRANSISTORS UFN230 UFN231 UFN232 UFN233 200 Volt, 0.4 Ohm N-Channel DESCRIPTION The U nitrode power M O SFET design utilizes the m ost advanced technology available. T his efficien t d esign achieves a very low R osiom and a high tran scon d u ctan ce.

GP1U58X

Abstract: LSE 1013 GP1U587X
Contextual Info: SHARP GP1U58X Series GP1U58X Series IR Detecting Unit For Remote Control • Features ■ O utlne Dimensions 1. Less sensitive to fluorescent lamp driven by inverter 2. Various B.P.F. Band Pass Filter frequency (Unit : mm) 14.2 1.4 Vout Vcc ® GND

transistor 400 volts.50 amperes

Abstract: prx t9 Transistor GE 67
Contextual Info: P O WE R E X m INC 31E D • 72R4b21 U B Bt C . Powerex, Inc., Hillls Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14

ScansUX988

Contextual Info: TTL MEMORY 93406 1024-BIT READ ONLY MEMORY D E S C R IP T IO N — The Fairchild 93406 is a 1024-bit Bipolar Read Only Memory organized 256 words by four bits. An 8-bit binary address is used to select the desired word. The four outputs are un­ committed collectors which permit "O R " tying of the outputs for expanding the memory in the

vfc52bp

Abstract: VFC42BP VFC42BM VFC52BM VFC42SM VFC52 VFC42 VFC52SM D2L DIODE VFC62
Contextual Info: VOLTAQE-TO-FREQUENCY AND FREQUENCY-TO-VOLTAGE CONVERTER FEA TU R ES • V/F OR F/V CONVERSION • TWO FREQUENCY RANGES 10kHz VFC42 100kHz (VFC52) • LOW NONLINEARITY ±001% M X (VFC42J ±000% m x (VFC52| • MINIMAL EXTERNAL COMPONENTS REQUIRED AM M ly mm txtanul rn itta r tar V/F aparatlM

HD10131

Contextual Info: H D 10131 D ual D -ty p e M a s te r -S la v e F lip F lo p s Th e H D 1 0 1 3 1 is a dual m aster-slave type D flip -flop. A s y n c h ro n o u s Se t S and R e se t(R ) override C lo c k ( C c ) and C lo c k I PIN ARRANGEMENT E n a b le (C E ) inputs. Each flip -flo p m a y be clo c ke d separately by h o ld in g the

HD10131

Abstract: rs FLIPFLOP SCHEMATIC
Contextual Info: H D 10131 D ual D -ty p e M a s te r -S la v e F lip F lo p s Th e H D 1 0 1 3 1 is a dual m aster-slave type D flip -flop. A s y n c h ro n o u s Se t S and R e se t(R ) override C lo c k ( C c ) and C lo c k I PIN ARRANGEMENT E n a b le (C E ) inputs. Each flip -flo p m a y be clo c ke d separately by h o ld in g the

Contextual Info: Product specification Philips Semico nductors-Slgnetlcs FAST Products Synchronizing cascaded dual positive edge74^*079« triggered D-type FEATURES DESCRIPTION • Metastable immune characteristics The 74F50728 is a cascaded dual positive

Diode CK 66A

Contextual Info: International ioR Rectifier 4055452 b36 « I N R P D ‘ 9-595A IRFP448 HEXFET P o w e r M O S F E T • • • • • • 0015532 IN T E R N A T IO N A L R E C T IF IE R Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching

CNW-137

Abstract: CNW2611 6N137 CNW2601 E55361 HCPL-2601 HCPL-2611 CNW-2611 r 4kl diode
Contextual Info: T hat HEW LETT mÜKM P A C K A R D VDE 0884 A p p roved , H igh CMR, H igh S p eed , L ogic G ate O p to co u p ler Technical Data cn w 26oi CNW2611 Features Applications Description • 5000 Vrms/1 M inute In su la tio n W ithstand C apab ility • W orldw ide S afety

data sheet thyristor 162-16

Abstract: E78996 datasheet irkt 40 st k136 E78996 IR IR E78996 IRK E78996 p432 IRK.136 I27900 K045
Contextual Info: Bulletin I27117 rev. B 03/00 SERIES IRK.136, .142, .162 NEW INT-A-pak Power Modules THYRISTOR/DIODE and THYRISTOR/THYRISTOR 135 A 140 A 160 A Features High Voltage Electrically Isolated by DBC Ceramic Al 2O 3 3500 V RMS Isolating Voltage Industrial Standard Package

D1895

Abstract: EC-958
Contextual Info: ANALOG DEVICES 3 V5 VDgtal Ajdo Ffecei\e; Bdernal /R L /D1895 FEATURES CP-1201, CP-340, I EC-958, AES/EBU, S /PDIF Digital Audio Receiver S tatus Pins for Stand-Alone Operation Requires External Analog Phase Lock Loop Single +3 V to 5 V Supply Com plete Error Reporting

10134F

Abstract: 10134N
Contextual Info: Signetics 10134 Multiplexer/Latch Dual 2-Input Multiplexer With Clocked D-Type Latches Product Specification EC L Products DESCRIPTIO N The 10134 is a Dual 2-Input Multiplexer with Clocked D-Type Latches. Latches can be clocked by the common Clock CP when the Clock Enable input (CE) is

MC10130L

Abstract: MC10130 MC10130P MC10516 C101 MC10102 MC10103 MC10105 MC10106 MC1011
Contextual Info: MECL 10.000 semes INTEGRATED CIRCUITS FROM MOTOROLA MC10,100/10,200 Series -30 to +85°C WIC10,500/10,600 Series (-55 to +125°C) Circuit design with M E C L 10,000 is unusually con­ venient. The differential amplifier input and emitterfollower output permit high fanout, the wired-OR option,

AY-3-1015

Abstract: AY5-1013 AY-5-1013A AY-3-1014A AY51013 AY-5-1013 1013A AY-6-1013 ay31015 ay-6-1016
Contextual Info: [Ë ï] UAR/T Z Î-° o lf aV3-110145A~ GENERAL INFORMATION Universal Asynchronous Receiver/Transmitter FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ D T L a n d T L L c o m p a tib le — n o in te rfa c in g c ir c u its re q u ire d — d riv e s o n e T T L lo ad.