LS 4704 Search Results

HBF4727A

Abstract: ZD 607 - triac ZD 607 - triac circuit hbf 4727a TDA3310 hbf4727 HBF4740 DTL-930 7-stage frequency divider BF479S
Contextual Info: / h o f t f o f m A T E ^SEMICONDUCTOR “ PRODUCTS 1979/80 I NT RODUCTI ON This publication aims to provide condensed information on the vast range of standard devices currently produced by SGS-ATES. For easy consultation the products have been divided into several sections according to the main product

La 7676

Abstract: nextel coating FG4605 FG-41 MBC800 FG4807 antenex mbc FG4103 162-168MHZ
Contextual Info: FIBERGLASS O M N ID IR E C TIO N A L A N T E N E X ' G o ld F ib e rg la s s Base Station antennas are c o ll inear designs enclosed in a high density fiberglass , w hich is covered with an u ltra v io le t in h ib itin g la y e r o f p rotective coating.

LA 7612

Abstract: FG4065 mrc 501 45047 LA+7612
Contextual Info: FIBERGLASS OMN 800 & 900 MHz A N T E N E X ' Golc Fioerglasb Base Station antennas are collinear designs enclosed in a high density fiberglass , which is covered with an ultraviolet inhibiting layer of protective coating. The radiating elements are made from high efficiency copper and are

LSE B6

Contextual Info: SUPERBRIGHT LED LAMP | op toelectron ics lighting:thew ay V A O L -3 M S B Y 2 Feature • ■ ■ Package Dimension Low Power Consumption High Intensity I.C. compatible Applications ■ ■ ■ ■ Commercial Outdoor Sign Board Front Panel Indicator Dot-Matrix Module

7360 tube

Abstract: Y8963 yagi vhf yagi uhf Y896 YS43012 Y1363 Y4503
Contextual Info: DIRECTIONAL Y Be sure to take a close look! This is undoubtedly the finest de­ signed and fully featured gamma match Yagi in the industry. The fully welded ANTENEX Yagi antenna features full 360-degree welds around each element to boom joint and they are fully gold

Contextual Info: tT y ‘ f g £ ? SUPERBRIGHT LED LAMP | o p to ele ctro n ic s lightinS:theway VAOL-3MSBY2 Feature • ■ ■ Package Dimension Low Power Consumption High Intensity I.C. compatible Applications ■ ■ ■ ■ Commercial Outdoor Sign Board Front Panel Indicator

volum

Abstract: LMC835
Contextual Info: LMC1982 National Semiconductor LMC1982 Digitally-Controlled Stereo Tone and Volume Circuit with Two Selectable Stereo Inputs • Enhanced stereo function General Description The LM C1982 is a m onolithic integrated circuit that provides volum e, balance, tone bass and treble , enhanced stereo,

ep 1387

Abstract: b1443 B1323 1641 B1443S 132-174MHZ
Contextual Info: O u r m o b ile a n te n n a s a re d e s ig n e d a n d b u ilt fo r ru g g e d applications. They are used extensively on m unicipal vehicles, in o ff road racing, on industrial vehicles, taxi cabs an d other high endurance applications such as police cruisers, emergency vehicles,

SN7449

Abstract: 54175 SN7401 74L42 SN7437 SN74S40
Contextual Info: Ordering Instructions and Mechanical Data INTEGRATED CIRCUITS MECHANICAL DATA ORDERING INSTRUCTIONS Electrical characteristics presented in this catalog, unless otherwise noted, apply for circuit type s listed in the page heading regardless of package. Except for diode arrays, ECL, and MOS devices, the availability of a circuit function in a

WIMA TFM

Abstract: Beckman 785-1 mkb3 wima TFM-.1UF-160V bf197 diode zener ph c9v1 2N4286 2N3642 bf197p transistor 2N2359A
Contextual Info: TENTH EDITION ELECTRONIC COMPONENTS CATALOGUE FAIRCHILD FERRANTI WAYCOM comway BECKMAN SPRAGUE ASTRALUX REDPOINT GREENPAR electronics limited MOLEX MARKET STREET BRACKNELL BERKS RG121JU RADIATRON TEL: SALES, BRACKNELL 0344 24765 TELEX:847201 ERG HELLERMANN

150-174MHZ

Abstract: yagi vhf Y8963 88-108 mhz antenna Y8966 Y1503 20D820 antenna yagi uhf 470-490MHZ
Contextual Info: D IR EC TIO N A L YAG I MODELS - S u p erio r Q uality a n d Perform aiince! B e sure to take a c lo s e look! This is undoubtedly the finest de­ sig n e d a n d fully featured gam m a m atch Yag i in the industry. The fully w elded ANTENEX* Y ag i antenna features fu ll 360-degree

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

A150S

Abstract: Model 947 A4503
Contextual Info: BROADBAND 1/^ WAVES / A BASE COLLINEARS / STUD MOUNTS Our B roadband Quarterwaves give you rugged d u ra b ility and clear perform ance! Denotes most popular models. Model Frequency Gain Radiator User $300<8300 S1000>S1000 Ordering Guide - Clear, Easy & Sensible:

Contextual Info: CY7C470 CY7C472 CY7C474 F/ C Y P R E S S 8K x 9 FIFO, 16Kx 9 FIFO, 32K x 9 FIFO with Programmable Flags Features Functional Description • 8K x 9 , 16K x 9, an d 32K x 9 FIFO buffer memory • A synchronous read/write • H igh-speed 33.3-M H z read/write

1S553

Abstract: YT-30194 LA1260 TN-10896 IC LA1260 YT30194 TSD 2DI YT30112 YT-30112 AOl31
Contextual Info: □ — KNo. N1506D NO.1506C t n i ' À T < C S v » < LA1260- F M / A M f 2 - mm F M : IF 7 > 7 , 9 * K 9 f fà ì$ L ,A F '7 V T > •/, [p P ^ A M ; R F T > 7“ , M I X , O S C A L C o è ), I F 7 > 7", • * f g Ì* t t ì* > o AGC, P ]P ^ > v * - ? M

YS02

Abstract: GS10 ZD AN569 MTP2N60E MTP2P50E 60Ade mtp2p zu4f
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M T P 2N 60E TM O S E-FET™ P o w er Field E ffe c t T ran sisto r Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 2.0 AMPERES 600 VOLTS RDS on = 3.8 OHMS This high voltage MOSFET uses an advanced termination

Contextual Info: OSP‘ OSSP Blind Mate Connectors Table of Contents O S P and O S S P Technology and Applications O S P Interface Mating Dimensions Specifications Semi-Rigid Cable Type .085 and .141 Diameter - Direct Solder Attachment .085 and .141 Diameter - O S C C Solderless

rectifier diode 1334

Abstract: DIODE 1334 LM 30HFU 8700-35
Contextual Info: Bulletin 12060 INTERNATIONAL RECTIFIER I«R 30HFU. SERIES SU P ER FAST R EC T IFIER DIODE 30 Amp 60ns Major ratings and characteristics Description and Features 30HFU Units 30 A Very low reverse reco very tim e ' f AVG Re d uce d switching losses S o ft re co very characteristics

Contextual Info: SMJ320C50KGD DIGITAL SIGNAL PROCESSOR KNOWN GOOD DIE SGZS007A - JUNE 1996 - REVISED JUNE 1997 Processed to MIL-PRF-38535 Fast Instruction Cycle Time of 30 ns, 40 ns, and 50 ns Source-Code Compatible With all ’C1x and ’C2x Devices RAM-Based Operation - 9K-Words x 16-Bit Dual-Access On-Chip

MC146804E2

Abstract: 2716c eprom motorola application note 6809 6844 mc68b09 marking code 8F 1BL Diode
Contextual Info: M otorola’s M icroprocessor/M icrocom puter Fam ilies 1 The M otorola M6800 G eneric Bus Concept and Use 2 R eliability 3 Data Sheets M echanical Data 5 Technical Training 6 M em ory Products Developm ent System s and Board-Level Products f 8 MOTOROLA MICROPROCESSORS

nas 1748

Contextual Info: P A t h tr f i. — Unmatched, Whipless Performance. Our unique < » » '” is a tough antenna fo r e xterior or interior applications. The » *’♦ ™ revolutionary patent pending design features low visibility, wide bandwidth and low angle radiation pattern

A2168

Abstract: yda 1364 YDA1502 ymst18 omni vhf antenna YDA4504 A1468
Contextual Info: DIPOLE ARRAY ANTENNAS / POWER DIVIDERS D on't le t the price o f our YDA Dipole antenna m islead you. This is a se rio u s antenna w ith high class features, such as fu ll golda n o d iz a tio n , f u lly w e ld e d e le m e n ts, a n d c h ro m e p la te d

FET transistors with s-parameters

Abstract: MICROWAVE ASSOCIATES MA4F600 f TIP 122 transistor MA4F004-918 ma4f004
Contextual Info: M/A-COM SEMICONDUCTOR “TÍ »T|st,M2al4 000Db25 t. J~. ¿S' AߣR MA4F004 Series Gallium Arsenide Field Effect Transistor Description The MA4F004 series of gallium arsenide fieldeffect transistors GaAs FETs is a series of Schottky barrier devices with a 1 micron length X

MICROWAVE ASSOCIATES

Abstract: pa 3029 b Dielectric Resonator Oscillator DRO high power FET transistor s-parameters 2.5 GHz RF power transistors with s-parameters RF transistors with s-parameters 5218 chip ic TIP 298
Contextual Info: M/A-C'OM' SEMICONDUCTOR _ci3 DE |St.45E] M □□00L30 S MA4F001 Series ¡88 Gallium Arsenide Field ^ Effect Transistors % S t su* mi IP I i Description a The MA4F001 series of gallium arsenide fieldeffect transistors (GaAs FETs) is a series of low power Schottky barrier gate devices with a 1