LS 33600 Search Results

LS 33600

Abstract: 12609 MH12609 367V 31007 LS33600
Contextual Info: PRIMARY LITHIUM BATTERIES LS 33600 3.6 V Primary lithium - thionyl chloride Li-SOCl2 High Drain D-size cell For applications with continuous currents up to 250 mA, possibly combined with pulsing and exposure to extreme temperatures. Key features High and stable operating voltage

LS 33600

Abstract: LS33600
Contextual Info: Primary lithium battery LS 33600 3.6 V Primary lithium-thionyl chloride Li-SOCl2 High energy D-size bobbin cell Benefits l  High voltage response, stable during most of the lifetime of the application l  Wide operating temperature range (- 60°C/85°C)

LS 33600

Contextual Info: Primary lithium battery LS 33600 3.6 V Primary lithium-thionyl chloride Li-SOCl2 High energy D-size bobbin cell Benefits ● ● ● ● High voltage response, stable during most of the lifetime of the application Wide operating temperature range (-60°C/85°C)

SI3018-FS

Abstract: SI2457-FT Si2457-FS Si3010-FS si3018fs Si2435ft isolation transformer v.90 Si24XX "line-side daa" si2457 Si2457
Contextual Info: ISOmodem Solutions EMBEDDED MODEMS AND FAX MODEMS WITH AN INTEGRATED GLOBAL DAA DESCRIPTION The ISOmodem family of products are complete modems ranging in speed from 2400 bps to 56,000 bps. Offered as a chipset with a 16-pin high-speed global line side LS device,

SI3018-F-FS

Abstract: Si3050 Si3019 si3018 Si2435 SI2457-C-FT si24xx ISOmodem 16 soic pcb footprint SI3018 Si2417 SI3018-F
Contextual Info: ISOmodem Solutions Embedded Modems And fax modems w i t h a n I n t e g r a t e d G l o b a l DAA description The ISOmodem family of products are complete modems ranging in speed from 2400 bps to 56,000 bps. Offered as a chipset with a 16-pin high-speed global line side LS

26180

Abstract: LM14250 LSH 26180 LSH 14250 LiMnO2 memoguard 6135-01-235-4168 LS 33600 6135997989851 BA5112U
Contextual Info: PRIMARY LITHIUM BATTERY SELECTOR GUIDE T H E B AT T E RY C O M PA N Y SAFT LITHIUM BATTERIES: EXCEEDING YOUR NEEDS For more than 30 years, Saft has pioneered, in Europe, North America and Asia/Pacific, the development and production of primary lithium cells

memoguard

Abstract: LM 327 CN LSH 26180 LiMnO2 LSH 20 safety Electronic toll collect ba5112 leclanche LSH 14250 SAFT space
Contextual Info: Primary lithium batteries Selector guide February 2005 Saft Lithium batteries meeting your needs… For more than 31 years, Saft has pioneered the development and production of primary lithium cells and battery packs in Europe, North America and Asia/Pacific.

1336-002

Abstract: c 1117 MU201
Contextual Info: B n N E n ^y Y -y —5 H * . &3EIÈ. * tt T 1 13-0034 m « ll5 Ä Ä K Ä 1 -3 -1 003-3813-5121 FAX 03-3813-6521 T 367-0021 lÖ E * *J ± m S Ö 2 -3 -1 M 03495-22-0851 ' í a ' í a í S t 'J U FAX 0495-24-6603 \. T 331 -0812 i S ï * é! ' * S m ^Kg/IB J3-429-1

Contextual Info: TGF2023-2-10 50 Watt Discrete Power GaN on SiC HEMT Applications • Defense & Aerospace • Broadband Wireless Product Features • • • • • • • Frequency Range: DC - 18 GHz 46.7 dBm Nominal PSAT at 3 GHz 60% Maximum PAE 17.5 dB Nominal Power Gain at 3 GHz

tgf2023-2-10

Contextual Info: TGF2023-2-10 50 Watt Discrete Power GaN on SiC HEMT Applications • Defense & Aerospace • Broadband Wireless Product Features • • • • • • • Frequency Range: DC - 18 GHz 46.7 dBm Nominal PSAT at 3 GHz 55% Maximum PAE 17.5 dB Nominal Power Gain at 3 GHz

Contextual Info: TGF2023-2-02 12 Watt Discrete Power GaN on SiC HEMT Applications • Defense & Aerospace • Broadband Wireless Product Features • • • • • • • Functional Block Diagram Frequency Range: DC - 18 GHz 41 dBm Nominal PSAT at 3 GHz 64% Maximum PAE

tgf2023-2-05

Contextual Info: TGF2023-2-05 25 Watt Discrete Power GaN on SiC HEMT Applications • Defense & Aerospace • Broadband Wireless Product Features • • • • • • • Functional Block Diagram Frequency Range: DC - 18 GHz 43.9 dBm Nominal PSAT at 3 GHz 62% Maximum PAE

MC8087-2/GaN 100 watt

Contextual Info: TGF2023-2-05 25 Watt Discrete Power GaN on SiC HEMT Applications • Defense & Aerospace • Broadband Wireless Product Features • • • • • • • Functional Block Diagram Frequency Range: DC - 18 GHz 43.9 dBm Nominal PSAT at 3 GHz 56% Maximum PAE

Contextual Info: TGF2023-2-02 12 Watt Discrete Power GaN on SiC HEMT Applications • Defense & Aerospace • Broadband Wireless Product Features • • • • • • • Functional Block Diagram Frequency Range: DC - 18 GHz 41 dBm Nominal PSAT at 3 GHz 58% Maximum PAE

Contextual Info: TGF2023-2-20 90 Watt Discrete Power GaN on SiC HEMT Applications • Defense & Aerospace • Broadband Wireless Product Features • • • • • • • Functional Block Diagram Frequency Range: DC - 18 GHz 49.6 dBm Nominal PSAT at 3 GHz 53% Maximum PAE

tgf2023-2-20

Contextual Info: TGF2023-2-20 90 Watt Discrete Power GaN on SiC HEMT Applications • Defense & Aerospace • Broadband Wireless Product Features • • • • • • • Functional Block Diagram Frequency Range: DC - 18 GHz 49.6 dBm Nominal PSAT at 3 GHz 58% Maximum PAE

Ericsson RRU

Abstract: ABB symphony plus cf400 PCI-20048T-1 circuit integrator sem 3040 nec v20 Ericsson TRU biomedical sensors nec v40 texas instruments 74LS612
Contextual Info: Third Edition The Handbook of Personal Computer Instrumentation for Data Acquisition, Test Measurement and Control BURR-BRO W N 1 Intelligent Instrumentation Products MODEL NUMBER INDEX S u b jec t In dex at back of hand boo k P C I-2 0 0 0 0 S ystem PCI-20000, c o n fig u ra tio n . 10-16,10-28

DIN 933

Abstract: GDML 3011 LED 24 RG LG diode 831 GDME 311 228-G1 GDML GDML 211 GDML 2011 GE1 G gdml 2011 DIN 43650-A
Contextual Info: GDM Series DIN 43650-A/ISO 4400 Cable socket, self-assembly Product description • in appliances and equipment subject to vibrations, e.g. track-bound vehicles, building machinery, conveying systems, using the crimp connection method GDMC Further information

17520 transistor

Abstract: ax3217
Contextual Info: Power 1C BIC1222 Bellnix' <Summary> BIC1222 is a high efficiency POWER-IC of MCM multi chip module with synchronous rectification system chopper control, N channel MOSFET of main switch and low side MOSFET for synchronous rectification. Maximum output is 5A and the input voltage range is 8V-20V. The functions such

Contextual Info: TGF2023-2-01 6 Watt Discrete Power GaN on SiC HEMT Applications • Defense & Aerospace • Broadband Wireless Product Features • • • • • • • Functional Block Diagram Frequency Range: DC - 18 GHz 38 dBm Nominal PSAT at 3 GHz 69% Maximum PAE 18 dB Nominal Power Gain at 3 GHz

sm56D CX06833-44

Abstract: CX20452 RD01-D460-1xx CX06833-42 CX06833-44 DS56-L147-043 AMS CROSS CX20452 PSTN Codec SM336D CX06833
Contextual Info: CX06833-4x SMXXD Modem V.92/V.34/V.32bis Modem in 144-Pin TQFP with Optional CX20452 Voice Codec Data Sheet DSH-202320A July 2009 Revision History Revision Date A July 31, 2009 Description Initial release 2009, Conexant Systems, Inc. All Rights Reserved.

BEL 188 TRANSISTOR PIN CONFIGURATION

Abstract: 5V reed relay nrzi modem 24c03 D0343 600336 4n35 optoisolator bel 188 transistor RCV3360P RCV3360W
Contextual Info: 4 ^ R o c k w e l l Semiconductor Systems RCV336DPÌ V.34 Data, V.17 Fax, Voice, Modem Data Pump Introduction Features The Rockwell RCV336DPi is a V.34 modem data pump family that supports data rates up to 33600 bps, fax operation up to 14400 bps, and voice codinjydecoding

Contextual Info: Power 1C BIC142I Bellnix <Summary> BIC1421 is a high efficiency PO W ER-IC o f MCM multi chip module with synchronous rectification system chopper control, N channel M OSFET of main switch and low side M OSFET for synchronous rectification. Maximum output is 3A and the Input voltage range corresponds to 8V-40V which

TA 168

Abstract: HD6305P
Contextual Info: R ELIABILITY TEST D A TA OF M IC R O C O M PU TER 1. IN T R O D U C T IO N M icro c o m p u ter is re q u ired to provide higher reliab ility and q u a lity w ith increasing fu n c tio n , enlarging scale an d w idening a p p lic a tio n . T o m e e t th is d e m a n d , H ita c h i is im p ro v in g th e