LP701 Search Results

Contextual Info: polyfet rf devices LP701 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

LP701

Abstract: LDMOS
Contextual Info: polyfet rf devices LP701 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

LP701

Contextual Info: polyfet rf devices LP701 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE

Contextual Info: polyfet rf devices LP701 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE

Contextual Info: ^EDL EDI8F8512C 512KxS Static Ram ELECTRONIC DESIGNS, INC 512Kx8 Static RAM CMOS, Module \Features The EDI8F8512C is a 4096K bit CMOS Static RAM based 512Kx8 bit CMOS Static on four 128Kx8 or 256Kx4 high speed Random Access Memory mounted on a multi-layered epoxy laminate (FR4) sub­

Contextual Info: W D EDI88257CA \ 256Kx8 Static Ram ELECTRONIC DESIGNS, INC. 256m Static RAM CMOS, Monolithic Features 256Kx8 bit CMOS Static Random Access Memory The EDI88257CA is a 2 megabit Monolithic CMOS Static • Access Times: 2 0 ,2 5 ,3 5 ,4 5 and 55ns RAM. • Data Retention Function LP version

Contextual Info: ^EDI EDI8F8512C 512KxS Static Ram ELECTRONIC DESIGNS, INC 512Kx8 Static RAM CMOS, Module iF eatures The EDI8F8512C is a 4096K bit CMOS Static RAM based 512Kx8 bit CMOS Static on four 128Kx8 or 256Kx4 high speed Random Access Memory mounted on a multi-layered epoxy laminate (FR4) sub­

MGCF21

Abstract: LY942 MOSFET 50 amp 1000 volt Gx4002 5 watt hf mosfet
Contextual Info: polyfet rf devices LDMOS Flanged Mount Pout Freq Gain theta 28 Volt LDMOS gm Idsat Ciss Crss Coss mho A polyfet rf devices Broad Band RF Power MOSFET LDMOS Transistors Surface Mount Pout Freq Gain theta 12.5 Volt VDMOS S Series gm Idsat Ciss Crss Coss Flanged Mount

DTM180AA

Abstract: DT-408 STD8018A LP05018 LS1012 DTM180AB
Contextual Info: ZERO-BIAS SCHOTTKY DIODE DETECTORS 100 KHz - 50 GHz FEATURES • No Bias Required • Matched Input for Excellent VSWR* • Extremely Flat Frequency Response* • Very High Sensitivity DZ Series * (DZR & DZM Series) APPLICATIONS ENVIRONMENTAL RATINGS

15X01

Abstract: EDI8F8512C EDI8F8512C20M6C EDI8F8512C25M6C EDI8F8512C35M6C EDI8F8512C70BSC EDI8F8512LP TCW50 EC09
Contextual Info: ^EDI EDI8F8512C 512KxS Static Ram ELECTRONIC DESIGNS. INC 512Kx8 Static RAM CMOS, Module ¡Features The EDI8F8512C is a 4096K bit CMOS Static RAM based on four 128Kx8 or 256Kx4 high speed Static RAMs mounted on a multi-layered epoxy laminate (FR4) sub­

rf push pull mosfet power amplifier

Abstract: 100 watt hf mosfet 12 volt 150w amplifier RF VHF 139 144 mhz uhf 150w mosfet 150w amplifier RF VHF 139 - 144 mhz LDMOS 15w ldmos l2711 vhf LP801 LK602 LR941
Contextual Info: polyfet rf devices Broad Band RF Power MOSFET Transistors TB# 178 179 180 181 182 183D 184 185 186 187 188 189 191 192 193A 194 195 196 197 199 200NUM1 201 202 203 204 205 206 207 208 210 211 212 Freq Range 136-174 30-88 50-88 118-165 100-500 1.5-30 1.5-30