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Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: LESHAN RADIO COMPANY, LTD. 20V P-Channel Enhancement-Mode MOSFET FEATURES LP2301ALT1G S-LP2301ALT1G ● RDS ON ≦110mΩ@VGS=-4.5V ● RDS(ON) ≦150mΩ@VGS=-2.5V ● Super high density cell design for extremely low RDS(ON) 3 ● S- Prefix for Automotive and Other Applications Requiring	Original	LP2301ALT1G S-LP2301ALT1G AEC-Q101 LP2301ALT3G OT-23	PDF
LP2301ALT1G Abstract: 20A SOT-23 lp2301a Contextual Info: LESHAN RADIO COMPANY, LTD. 20V P-Channel Enhancement-Mode MOSFET FEATURES ● RDS ON ≦110mΩ@VGS=-4.5V LP2301ALT1G ● RDS(ON) ≦150mΩ@VGS=-2.5V ● Super high density cell design for extremely low RDS(ON) 3 APPLICATIONS ● Power Management in Note book	Original	LP2301ALT1G 3000/Tape& LP2301ALT3G 10000/Tape& OT-23 LP2301ALT1G 20A SOT-23 lp2301a	PDF

Catalog Datasheet

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Document Tags

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Contextual Info: LESHAN RADIO COMPANY, LTD. 20V P-Channel Enhancement-Mode MOSFET FEATURES LP2301ALT1G S-LP2301ALT1G ● RDS ON ≦110mΩ@VGS=-4.5V ● RDS(ON) ≦150mΩ@VGS=-2.5V ● Super high density cell design for extremely low RDS(ON) 3 ● S- Prefix for Automotive and Other Applications Requiring

Original

LP2301ALT1G S-LP2301ALT1G AEC-Q101 LP2301ALT3G OT-23

PDF

LP2301ALT1G

Abstract: 20A SOT-23 lp2301a
Contextual Info: LESHAN RADIO COMPANY, LTD. 20V P-Channel Enhancement-Mode MOSFET FEATURES ● RDS ON ≦110mΩ@VGS=-4.5V LP2301ALT1G ● RDS(ON) ≦150mΩ@VGS=-2.5V ● Super high density cell design for extremely low RDS(ON) 3 APPLICATIONS ● Power Management in Note book

Original

LP2301ALT1G 3000/Tape& LP2301ALT3G 10000/Tape& OT-23 LP2301ALT1G 20A SOT-23 lp2301a

PDF