LOW VOLTAGE TRANSISTOR ELECTRONICS Search Results

LM389

Abstract: LM389N LM386 "transistors Vceo" "low voltage audio power amplifier"
Contextual Info: LM389 LM389 Low Voltage Audio Power Amplifier with NPN Transistor Array Literature Number: SNOSBT9A LM389 Low Voltage Audio Power Amplifier with NPN Transistor Array Low quiescent current drain Voltage gains from 20 to 200 Y Ground referenced input Y Self-centering output quiescent voltage

Contextual Info: 2SB772L SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS LTD. TECHNICAL DATA FNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR •ackage: TO-126 FEATURES current output up to 3A ♦Low saturation voltage *Con$femert lo 2SD882L APPLICATIONS

Contextual Info: 2SD882 SEM ICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS LTD, _ NFN EPITAXIAL SILICON TRANSISTOR TECHNICAL DATA LOW VOLTAGE fflGH CURRENT TRANSISTOR Package: TO-92 FEATURES •High current output to 3A •Low saturation voltage •Complement to 2SB772 APPLICATIONS

MPS-A93

Contextual Info: vir-^ÄW' PNP SILICON TRANSISTOR 'T O -9 2 A MPS-A93 is PNP silicon planar epitaxial transistor designed for general purpose applications requiring high breakdown voltage, low saturation voltage and low capacitance. EBC ABSOLUTE MAXIMUM RATINGS Collector-Emitter Voltage

Contextual Info: 2SD882L SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS LTTL TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR Package: TO-126 FEATURES •High currert oiMput 14 to 3A •Low saturation voltage ♦Conplem eii to 2SB772L APPLICATIONS

Contextual Info: 2SB772 SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS LTD, _ TECHNICAL DATA PNP H>ITAXIAL SILICON TRANSISTOR HIGH CURRENT LOW VOLTAGE TRANSISTOR Package: TO-92 FEATURES ♦High current output up to 3A ♦Low satuatkm voltage ♦Complement to 2SD882 APPLICATIONS

Contextual Info: KSP94 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR • High Collector-Emitter Voltage: VCEo = - 400V • Low Collector-Emltter Saturation Voltage • Complement to MPSA44 ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage Collector Emitter Voltage

Contextual Info: 1 MPS-A93 PNP SS SILICON TRANSISTOR 'T O -9 2 A MPS-A93 is PNP silicon planar epitaxial transistor designed for general purpose applications requiring high breakdown voltage, low saturation voltage and low capacitance. EBC ABSOLUTE MAXIMUM RATINGS Collector-Emitter Voltage

Contextual Info: MMBT2484 NPN EPITAXIAL SILICON TRANSISTOR LOW NOISE TRANSISTOR -SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature

KST5086

Abstract: KST5087 100khz 5v transistor BB569 transistor za
Contextual Info: KST5086/5087 PNP EPITAXIAL SILICON TRANSISTOR LOW NOISE TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C Symbol Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature V

KTA1703

Contextual Info: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KTA1703 EPITAXIAL PLANAR PNP TRANSISTOR HIGH VOLTAGE APPLICATION. DC-DC CONVERTER. LOW POWER SWITCHING REGULATOR. FEATURES • High Breakdown Voltage. : V Ceo = -400V • Low Collector Saturation Voltage

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SB1260 TRANSISTOR PNP 1. BASE FEATURES z Power Transistor z High Voltage and Current z Low Collector-emitter saturation voltage z Complements the 2SD1898

JLN 2003

Abstract: 2SC4226 APPLICATION NOTES newmarket transistor 2SC4226 2SC4226-T1 2SC4226-T1-A 2SC4226-A Korea Electronics TRANSISTOR
Contextual Info: PreliminaryData Sheet 2SC4226 R09DS0022EJ0200 Rev.2.00 Jun 29, 2011 NPN Epitaxial Silicon RF Transistor for High-Frequency Low-Noise Amplification 3-pin super Minimold NPN Silicon RF Transistor DESCRIPTION The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low noise amplifier.

KTA1277

Abstract: transistor ktA1277
Contextual Info: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KTA1277 EPITAXIAL PLANAR PNP TRANSISTOR HIGH VOLTAGE APPLICATION. DC-DC CONVERTER. LOW POWER SWITCHING REGULATOR. FEATURES • High Breakdown Voltage. • Low Collector Saturation Voltage. • High Speed Switching.

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors STD123S TRANSISTOR NPN SOT-23 FEATURES z Low saturation medium current application z Extremely low collector saturation voltage z Suitable for low voltage large current drivers

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 STC128 Plastic-Encapsulate Transistors TRANSISTOR NPN TO – 92 FEATURES z Low Saturation Medium Current Application z Extremely Low Collector Saturation Voltage z Suitable for Low Voltage Large Current Drivers

marking R33

Abstract: 2SC4227 2SC4227-T1
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC4227 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN SUPER MINIMOLD DESCRIPTION The 2SC4227 is a low supply voltage transistor designed for VHF, UHF low noise amplifier. It is suitable for a high density surface mount assembly since the transistor has been applied 3-pin super minimold

2SC4226

Abstract: 2SC4226 APPLICATION NOTES PU10450EJ01V0DS R25 marking 2SC4226 datasheet marking r25 NPN 2SC4226-T1 transistor s2p
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC4226 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN SUPER MINIMOLD DESCRIPTION The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low noise amplifier. It is suitable for a high density surface mount assembly since the transistor has been applied 3-pin super minimold

2SC4228

Abstract: 2SC4228-T1 TRANSISTOR R44
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC4228 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN SUPER MINIMOLD DESCRIPTION The 2SC4228 is a low supply voltage transistor designed for VHF, UHF low noise amplifier. It is suitable for a high density surface mount assembly since the transistor has been applied 3-pin super minimold

transistor H-R

Abstract: KST5088 KST5089 marking SAI
Contextual Info: KST5088/5089 NPN EPITAXIAL SILICON TRANSISTOR LOW NOISE TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Rating Unit - Collector-Base Voltage VcbO KST5088 KST5089 Collector-Emitter Voltage 35 30 . V ce O KST5088 KST5089 Emitter-Base Voltage

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PBSS3540F 40 V low VCEsat PNP transistor Product specification 2001 Jul 13 Philips Semiconductors Product specification 40 V low VCEsat PNP transistor PBSS3540F FEATURES QUICK REFERENCE DATA • Low collector-emitter saturation voltage

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PBSS2540F 40 V low VCEsat NPN transistor Product specification 2001 Oct 31 Philips Semiconductors Product specification 40 V low VCEsat NPN transistor PBSS2540F FEATURES QUICK REFERENCE DATA • Low collector-emitter saturation voltage

nec 2501

Abstract: ic nec 2501 nec RF package SOT89 2SC4703 2501 NEC 2SC4703-T1 2SC470-3
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC4703 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 3-PIN POWER MINIMOLD DESCRIPTION The 2SC4703 is designed for low distortion, low noise RF amplifier operating with low supply voltage VCE = 5 V .

MHC474

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PBSS4240V 40 V low VCEsat NPN transistor Product specification 2003 Jan 30 Philips Semiconductors Product specification 40 V low VCEsat NPN transistor PBSS4240V FEATURES QUICK REFERENCE DATA • Low collector-emitter saturation voltage VCEsat