LOW SATURATION OPTO Search Results

LOW SATURATION OPTO Result Highlights (5)

Part	Manufacturer	Description	Download
NFMJMPL226R0G5D	Murata Manufacturing Co Ltd	Large Current 3 Terminals Low ESL Chip Multilayer Ceramic Capacitors (EMI Filter) for General Purpose	PDF
NFMJMPC156R0G3D	Murata Manufacturing Co Ltd	Large Current 3 Terminals Low ESL Chip Multilayer Ceramic Capacitors (EMI Filter) for General Purpose	PDF
NFM31PC276D0E3L	Murata Manufacturing Co Ltd	Large Current 3 Terminals Low ESL Chip Multilayer Ceramic Capacitors (EMI Filter) for General Purpose	PDF
FO-LSDUALSCSM-003	Amphenol Cables on Demand	Amphenol FO-LSDUALSCSM-003 SC-SC Duplex Single-Mode 9/125 Fiber Optic Patch Cable (OFN-LS Low Smoke) - 2 x SC Male to 2 x SC Male 3m	PDF
CS-DSLSZH25MF-002.5	Amphenol Cables on Demand	Amphenol CS-DSLSZH25MF-002.5 25-Pin (DB25) LSZH Low Smoke D-Sub Cable - Double Shielded + EMI Cage - Male / Female 2.5ft	PDF

LOW SATURATION OPTO Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
igbt dimmer Abstract: FGPF7N60LSD FGPF7N60LSDTU dimmer IGBT Contextual Info: FGPF7N60LSD 600V, 7A Low Saturation IGBT CO-PAK Features Description • Low saturation voltage : VCE sat = 1.4 V @ IC = 7A Fairchild's Insulated Gate Bipolar Transistors (IGBTs) provides very low conduction and switching losses.The device is designed for Lamp applications where very low On-Voltage	Original	FGPF7N60LSD O-220F FGPF7N60LSD igbt dimmer FGPF7N60LSDTU dimmer IGBT	PDF
ge tube company Contextual Info: FGPF7N60LSD 600V, 7A Low Saturation IGBT CO-PAK Features Description • Low saturation voltage : VCE sat = 1.4 V @ IC = 7A Fairchild's Insulated Gate Bipolar Transistors (IGBTs) provides very low conduction and switching losses.The device is designed for Lamp applications where very low On-Voltage	Original	FGPF7N60LSD FGPF7N60LSD O-220F FGPF7N60LSDTU ge tube company	PDF
LED display module Abstract: HSOP16 LOW SATURATION VOLTAGE SOURCE DRIVER TD62M8600F 8ch LOW SATURATION DRIVER HSOP16-P-300 toshiba motor diode 518 Contextual Info: TOSHIBA Silicon Monolithic Bi-Polor Digital Integrated Circuit TD62M8600F TD62M8600F 8CH Low Saturation Voltage Source Driver Product Description: This product is a Multi-Chip IC and incorporates 8 low saturation discrete transistors equipped with Fly-wheeling	Original	TD62M8600F HSOP16-P-300: HSOP16 LED display module LOW SATURATION VOLTAGE SOURCE DRIVER TD62M8600F 8ch LOW SATURATION DRIVER HSOP16-P-300 toshiba motor diode 518	PDF
FPN660A Abstract: CBVK741B019 F63TNR FPN660 PN2222N pnp Saturation transistor to-226 Contextual Info: FPN660 / FPN660A FPN660 FPN660A C TO-226 B E PNP Low Saturation Transistor These devices are designed for high current gain and low saturation voltage with collector currents up to 3.0 A continuous. Sourced from Process PA. Absolute Maximum Ratings* Symbol	Original	FPN660 FPN660A FPN660 O-226 FPN660A CBVK741B019 F63TNR PN2222N pnp Saturation transistor to-226	PDF
CBVK741B019 Abstract: F63TNR FPN430 FPN430A PN2222N Contextual Info: FPN430 / FPN430A FPN430 FPN430A C TO-226 B E PNP Low Saturation Transistor These devices are designed for high current gain and low saturation voltage with collector currents up to 2.0 A continuous. Sourced from Process PB. Absolute Maximum Ratings* Symbol	Original	FPN430 FPN430A FPN430 O-226 CBVK741B019 F63TNR FPN430A PN2222N	PDF
SuperSOT-23 Abstract: FSB560 FSB560A Contextual Info: FSB560/FSB560A NPN Low Saturation Transistor C Features • These devices are designed with high current gain and low saturation voltage with collector currents up to 2A continuous. E B Absolute Maximum Ratings* Symbol TA=25°C unless otherwise noted Parameter	Original	FSB560/FSB560A SuperSOT-23 FSB560 FSB560A	PDF
FPN630 Abstract: FPN630A PN2222N CBVK741B019 F63TNR TO-226-AE D26Z weig S0480 226AE Contextual Info: FPN630 / FPN630A FPN630 FPN630A C TO-226 B E PNP Low Saturation Transistor These devices are designed for high current gain and low saturation voltage with collector currents up to 3.0 A continuous. Sourced from Process PC. Absolute Maximum Ratings* Symbol	Original	FPN630 FPN630A FPN630 O-226 FPN630A PN2222N CBVK741B019 F63TNR TO-226-AE D26Z weig S0480 226AE	PDF
Contextual Info: FSB560/FSB560A NPN Low Saturation Transistor C Features • These devices are designed with high current gain and low saturation voltage with collector currents up to 2A continuous. E B Absolute Maximum Ratings* Symbol TA=25°C unless otherwise noted Parameter	Original	FSB560/FSB560A	PDF
CBVK741B019 Abstract: F63TNR FPN560 FPN560A PN2222N Contextual Info: FPN560 / FPN560A FPN560 FPN560A C TO-226 B E NPN Low Saturation Transistor These devices are designed for high current gain and low saturation voltage with collector currents up to 3.0 A continuous. Sourced from Process NA. Absolute Maximum Ratings* Symbol	Original	FPN560 FPN560A FPN560 O-226 CBVK741B019 F63TNR FPN560A PN2222N	PDF
Contextual Info: FPN660 / FPN660A FPN660 FPN660A C TO-226 B E PNP Low Saturation Transistor These devices are designed for high current gain and low saturation voltage with collector currents up to 3.0 A continuous. Sourced from Process PA. Absolute Maximum Ratings* Symbol	Original	FPN660 FPN660A O-226	PDF
transistor tic 226 Abstract: CBVK741B019 F63TNR FPN330 FPN330A PN2222N Contextual Info: FPN330 / FPN330A FPN330 FPN330A C TO-226 B E NPN Low Saturation Transistor These devices are designed for high current gain and low saturation voltage with collector currents up to 3.0 A continuous. Sourced from Process NB. Absolute Maximum Ratings* Symbol	Original	FPN330 FPN330A FPN330 O-226 transistor tic 226 CBVK741B019 F63TNR FPN330A PN2222N	PDF
Contextual Info: FSB749 PNP Low Saturation Transistor Description C These devices are designed with high-current gain and low saturation voltage with collector currents up to 3 A continuous. Sourced from process PC. E B SuperSOTTM-3 Ordering Information Part Number Top Mark	Original	FSB749	PDF
CBVK741B019 Abstract: F63TNR FPN530 FPN530A PN2222N TO-226-AE 226AE Contextual Info: FPN530 / FPN530A FPN530 FPN530A C TO-226 B E NPN Low Saturation Transistor These devices are designed for high current gain and low saturation voltage with collector currents up to 3.0 A continuous. Sourced from Process NC. Absolute Maximum Ratings* Symbol	Original	FPN530 FPN530A FPN530 O-226 CBVK741B019 F63TNR FPN530A PN2222N TO-226-AE 226AE	PDF
FPN430 Abstract: FPN430A Contextual Info: FPN430 / FPN430A FPN430 FPN430A C TO-226 B E PNP Low Saturation Transistor These devices are designed for high current gain and low saturation voltage with collector currents up to 2.0 A continuous. Sourced from Process PB. Absolute Maximum Ratings* Symbol	Original	FPN430 FPN430A FPN430 O-226 FPN430A	PDF

Contextual Info: NZT660 / NZT660A PNP Low Saturation Transistor Description 4 These devices are designed with high-current gain and low saturation voltage with collector currents up to 3 A continuous. 3 2 1 SOT-223 1. Base 2,4. Collector 3. Emitter Ordering Information Part Number	Original	NZT660 NZT660A OT-223 NZT660 OT-223	PDF
c 1246 Abstract: fzt649 CBVK741B019 F63TNR F852 PN2222A On semiconductor date Code sot-223 transistor pn2222a 01246 Contextual Info: July 1998 FZT649 C B C E SOT-223 NPN Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous. Absolute Maximum Ratings* TA = 25°C unless otherwise noted FZT649 Units	Original	FZT649 OT-223 c 1246 fzt649 CBVK741B019 F63TNR F852 PN2222A On semiconductor date Code sot-223 transistor pn2222a 01246	PDF
Contextual Info: July 1998 FZT649 C B C E SOT-223 NPN Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous. Absolute Maximum Ratings* TA = 25°C unless otherwise noted FZT649 Units	Original	FZT649 OT-223	PDF
Contextual Info: July 1998 FZT749 C B C E SOT-223 PNP Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter	Original	FZT749 OT-223	PDF
Contextual Info: FSB660A PNP Low Saturation Transistor Description C These devices are designed with high-current gain and low saturation voltage with collector currents up to 2 A continuous. E B SuperSOT -3 SOT-23 Ordering Information Part Number Marking Package Packing Method	Original	FSB660A OT-23)	PDF
FZT749 Contextual Info: FZT749 PNP Low Saturation Transistor Description 4 These devices are designed with high-current gain and low saturation voltage with collector currents up to 3 A continuous. 3 2 1 SOT-223 1. Base 2,4. Collector 3. Emitter Ordering Information Part Number Marking	Original	FZT749 OT-223 OT-223 FZT749	PDF
ZTX749 Abstract: ZTX749 equivalent Contextual Info: ZTX749 ZTX749 PNP Low Saturation Transistor • This device are designed with high current gain and low saturation voltage with collector currents up to 2A continuous. C BE TO-226 Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol VCEO Parameter	Original	ZTX749 O-226 ZTX749 ZTX749 equivalent	PDF
fzt649 Contextual Info: July 1998 FZT649 C B C E SOT-223 NPN Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous. Absolute Maximum Ratings* TA = 25°C unless otherwise noted FZT649 Units	Original	FZT649 OT-223 fzt649	PDF
SSOT-3 Abstract: F63TNR 3.2 CBVK741B019 F63TNR FSB749 MMSZ5221B Contextual Info: FSB749 FSB749 C E B SuperSOTTM-3 PNP Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous. Sourced from Process PC. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted	Original	FSB749 SSOT-3 F63TNR 3.2 CBVK741B019 F63TNR FSB749 MMSZ5221B	PDF
SSOT-3 Abstract: CBVK741B019 F63TNR FSB560 FSB560A MMSZ5221B SuperSOTTM -3 Contextual Info: FSB560/FSB560A FSB560 / FSB560A C E B TM SuperSOT -3 SOT-23 NPN Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 2A continuous. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted	Original	FSB560/FSB560A FSB560 FSB560A OT-23) SSOT-3 CBVK741B019 F63TNR FSB560A MMSZ5221B SuperSOTTM -3	PDF

LOW SATURATION OPTO Search Results

LOW SATURATION OPTO Result Highlights (5)

LOW SATURATION OPTO Datasheets Context Search

igbt dimmer

ge tube company

LED display module

FPN660A

CBVK741B019

SuperSOT-23

FPN630

CBVK741B019

transistor tic 226

CBVK741B019

FPN430

c 1246

FZT749

ZTX749

fzt649

SSOT-3

SSOT-3