LOW POWER ZENER Search Results
LOW POWER ZENER Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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NFMJMPL226R0G5D | Murata Manufacturing Co Ltd | Large Current 3 Terminals Low ESL Chip Multilayer Ceramic Capacitors (EMI Filter) for General Purpose | |||
NFMJMPC156R0G3D | Murata Manufacturing Co Ltd | Large Current 3 Terminals Low ESL Chip Multilayer Ceramic Capacitors (EMI Filter) for General Purpose | |||
NFM31PC276D0E3L | Murata Manufacturing Co Ltd | Large Current 3 Terminals Low ESL Chip Multilayer Ceramic Capacitors (EMI Filter) for General Purpose | |||
MGN1D120603MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 12-6/-3V GAN | |||
MGN1D050603MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 5-6/-3V GAN |
LOW POWER ZENER Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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vhdl code for fifo and transmitterContextual Info: ProASIC 3L Low-Power Handbook ProASIC3L Low-Power Flash Device Handbook Table of Contents Low-Power Flash Device Handbooks Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i Section I – ProASICL Low-Power Datasheet |
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Contextual Info: ProASIC 3L Low-Power Handbook ProASIC3L Low-Power Flash Device Handbook Table of Contents Low-Power Flash Device Handbooks Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i Section I – ProASICL Low-Power Datasheet |
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IO191
Abstract: vhdl code for fifo and transmitter actel FG484 package mechanical drawing
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DUAL-PORT STATIC RAM
Abstract: IC transistor linear handbook
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RT3PE3000
Abstract: A3P60 eeprom programmer schematic design TDP 246 fips A500K270
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A3P3000
Abstract: HEADER-CONVERTER
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tlo34
Abstract: tl031 equivalent ic
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OCR Scan |
TL03x, TL03XA, TL03xY TL06x TL031A) TL03x TL031 tlo34 tl031 equivalent ic | |
Contextual Info: SG2011 300mA, Low Power, Low Dropout, Linear Regulators GENERAL DESCRIPTION The SG2011 low-power, low-dropout, CMOS linear voltage regulators operate from a 2.5V to 5.5V input and deliver up to 300mA. They are perfect choice for low voltage, low power applications. An ultra low ground |
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SG2011 300mA, SG2011 300mA. 210mV 300mA 300mA | |
Contextual Info: 2SK2259-01MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-IIA SERIES Features Outline Drawings High current Low on-resistance No secondary breakdown Low driving power High forward Transconductance Avalanche-proof Including G-S Zener diode TO-220F15 |
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2SK2259-01MR O-220F15 | |
2SK1822-01MR
Abstract: 2sk1822
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2SK1822-01MR O-220F15 SC-67 2SK1822-01MR 2sk1822 | |
2SK2259-01MRContextual Info: 2SK2259-01MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-IIA SERIES Features Outline Drawings High current Low on-resistance No secondary breakdown Low driving power High forward Transconductance Avalanche-proof Including G-S Zener diode TO-220F15 |
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2SK2259-01MR O-220F15 2SK2259-01MR | |
M5010Contextual Info: 2SK1822-01MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-IIIA SERIES Outline Drawings Features High current Low on-resistance No secondary breakdown Low driving power High forward Transconductance Avalanche-proof Including G-S Zener diode TO-220F15 |
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2SK1822-01MR O-220F15 SC-67 M5010 | |
2SK1969-01
Abstract: 2SK1969
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2SK1969-01 SC-65 2SK1969-01 2SK1969 | |
30V 20A power p MOSFET
Abstract: 2SK2165-01 SC-65
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2SK2165-01 SC-65 30V 20A power p MOSFET 2SK2165-01 SC-65 | |
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Y525
Abstract: Y528 BZM55B5V6 SGM2005 DFN-6
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SGM2005 150mA, SGM2005 150mA. 100kHz) 150mA 150mV Y525 Y528 BZM55B5V6 DFN-6 | |
BZM55B5V6
Abstract: SGM2014 sg sot23 marking 1F 6 pin Zener diode sot23-5
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SGM2014 250mA, SGM2014 250mA. current160 250mA 250mV BZM55B5V6 sg sot23 marking 1F 6 pin Zener diode sot23-5 | |
Contextual Info: 2SK2165-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-IIIA SERIES Outline Drawings Features High current Low on-resistance No secondary breakdown Low driving power High forward Transconductance Avalanche-proof Including G-S Zener diode TO-3P Applications |
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2SK2165-01 SC-65 | |
2SK1969
Abstract: 2SK1969-01 M6020 SC-65 300VDS
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2SK1969-01 SC-65 2SK1969 2SK1969-01 M6020 SC-65 300VDS | |
SG2010
Abstract: XA28
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SG2010 150mA, SG2010 150mA. 150mA 105mV XA28 | |
ProASIC3
Abstract: yc 409
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130-nm, 128-Bit ProASIC3 yc 409 | |
Contextual Info: HZ Series SILICON EPITAXIAL PLANER ZENER DIODES FOR STABILIZED POWER SUPPLY Features • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6V through 38V of zener |
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HZ30-2 HZ20-2 HZ16-2 HZ12B2 HZ24-2 HZ36-2 | |
diode HZS2A1
Abstract: HZS4A1 HZS4B2 HZS5B2 HZS5C3 ZENER HZS6C2 HZS11A1 HZS11A2 HZS11A3 HZS11B1
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DO-34 HZS36-2 diode HZS2A1 HZS4A1 HZS4B2 HZS5B2 HZS5C3 ZENER HZS6C2 HZS11A1 HZS11A2 HZS11A3 HZS11B1 | |
HZS3C3
Abstract: HZS3A1 HZS7A1 HZS5B2 HZS7A3 HZS11A1 HZS11A2 HZS11B1 HZS11B2 HZS11C1
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HZS36-2 HZS3C3 HZS3A1 HZS7A1 HZS5B2 HZS7A3 HZS11A1 HZS11A2 HZS11B1 HZS11B2 HZS11C1 | |
HZ7C1
Abstract: hz15 HZ11A1 HZ11A2 HZ11A3 HZ11B1 HZ11B2 HZ11B3 HZ11C1 HZ11C2
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HZ12B2 HZ24-2 HZ36-2 HZ7C1 hz15 HZ11A1 HZ11A2 HZ11A3 HZ11B1 HZ11B2 HZ11B3 HZ11C1 HZ11C2 |