LOW POWER RF TRANSISTOR T Search Results

NEC 2501

Abstract: 2SC4536-T1 ic nec 2501 2501 NEC 2SC4536 nec RF package SOT89 qs marking sot-89
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC4536 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN POWER MINIMOLD DESCRIPTION The 2SC4536 is designed for use in middle power, low distortion low noise figure RF amplifier. It features

2SC4703-T1

Abstract: NE46234 2SC4703 2SC470-3
Contextual Info: NPN SILICON RF TRANSISTOR NE46234 / 2SC4703 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 3-PIN POWER MINIMOLD DESCRIPTION The NE46234 / 2SC4703 is designed for low distortion, low noise RF amplifier operating with low supply voltage

nec 2501

Abstract: ic nec 2501 nec RF package SOT89 2SC4703 2501 NEC 2SC4703-T1 2SC470-3
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC4703 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 3-PIN POWER MINIMOLD DESCRIPTION The 2SC4703 is designed for low distortion, low noise RF amplifier operating with low supply voltage VCE = 5 V .

nec 2501

Abstract: NESG240034 ic nec 2501 2501 nec
Contextual Info: PRELIMINARY DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG240034 NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD 34 PKG FEATURES • The device is an ideal choice for low noise, low distortion amplification.

nec 2501

Abstract: ic nec 2501 2501 NEC NESG220034
Contextual Info: PRELIMINARY DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG220034 NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD 34 PKG FEATURES • The device is an ideal choice for low noise, low distortion amplification.

BLH*3355

Abstract: BLH3355 blh335 uhf amplifier design Transistor NPN planar RF transistor high power npn UHF transistor
Contextual Info: BLH3355 NPN EPITAXIAL SILICON RF TRANSISTOR CHIP BLH3355 Description NPN epitaxial silicon RF transistor for microwave low-noise amplification Features Low noise and high gain bandwidth product High power gain Applications UHF / VHF wide band amplifier Structure

Contextual Info: NPN SILICON GERMANIUM RF TRANSISTOR NESG2101M16 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 125 mW 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise,

transistor T1J

Abstract: NESG2101M05-A transistor T1J 4pin M05 MARKING
Contextual Info: NPN SILICON GERMANIUM RF TRANSISTOR NESG2101M05 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 125 mW FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M05) FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise,

NESG2101M16

Abstract: NESG2101M16-T3 NESG2101M16-T3-A
Contextual Info: NPN SILICON GERMANIUM RF TRANSISTOR NESG2101M16 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 125 mW 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, highgain amplification

Contextual Info: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2101M16 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 125 mW 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, highgain amplification

NESG2101M16

Abstract: NESG2101M16-T3
Contextual Info: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2101M16 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 125 mW 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PACKAGE) FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, highgain amplification

Contextual Info: , One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 MRF492 MRF492A | The RF Line 70 W 60 MHz RF POWER TRANSISTOR NPN SILICON NPN SILICON RF POWER TRANSISTOR (-•—.— » . . . designed for 1 2.5 volt low band VHP large-signal power amplifier

transistor T1J

Abstract: NESG2101M05-T1 NESG2101M05
Contextual Info: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2101M05 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 125 mW FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M05) FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, highgain amplification

transistor NEC D 586

Abstract: CD 1691 CB NEC D 586 Nec b 616 2SC4536 nec 0432 marking AG sot-89
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4536 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC4536 is designed for use in middle power, low distortion low noise figure RF amplifier. It features excellent linearity and large dynamic

TSDF1205RW

Abstract: TSDF1205 TSDF1205R TSDF1205W
Contextual Info: TSDF1205/TSDF1205R/TSDF1205W/TSDF1205RW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and small signal low power amplifiers. This transistor has superior noise figure and

Contextual Info: TSDF1205/TSDF1205R/TSDF1205W/TSDF1205RW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and small signal low power amplifiers. This transistor has superior noise figure and

Contextual Info: TSDF1205/TSDF1205R/TSDF1205W/TSDF1205RW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and small signal low power amplifiers. This transistor has superior noise figure and

Contextual Info: TSDF1205/TSDF1205R/TSDF1205W/TSDF1205RW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and small signal low power amplifiers. This transistor has superior noise figure and

BFR280T

Contextual Info: BFR280T TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications For low noise and small signal low power amplifiers. This transistor has superior noise figure and associated gain performance at UHF, VHF, and microwave frequencies. Features

2SC4536

Abstract: 2SC5337 2SC5337-T1 105dBuV P1093
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5337 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 4-PIN POWER MINIMOLD FEATURES • Low distortion: IM2 = 59.0 dB TYP., IM3 = 82.0 dB TYP. @ VCE = 10 V, IC = 50 mA • Low noise NF = 1.5 dB TYP. @ VCE = 10 V, IC = 50 mA, f = 500 MHz

telefunken IC

Abstract: BFP280
Contextual Info: BFP 280 T TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications For low noise and small signal low power amplifiers. This transistor has superior noise figure and associated gain performance at UHF, VHF, and microwave frequencies. Features

transistor NEC B 617

Abstract: nec k 3115 NEC k 3115 transistor 2SC3357 2SC5336 2SC5336-T1 4435 power ic NEC 718 P1093 NEC B 617
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5336 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 4-PIN POWER MINIMOLD FEATURES • High gain: S21e = 12 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz 2 • 4-pin power minimold package with improved gain from the 2SC3357

IC 7482

Abstract: 2SC4536 nec RF package SOT89
Contextual Info: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC4536 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION PACKAGE DIMENSIONS The 2SC4536 is designed for use in middle power, low distortion low Unit: mm noise figure RF amplifier. It features excellent linearity and large dynamic

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4536 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2 S C 4 5 3 6 is designed for use in middle power, low distortion low noise figure RF amplifier. It features excellent linearity and large dynamic