LOW INPUT CAPACITANCE MOS FET Search Results

NEC 200R

Abstract: code marking NEC PS7200R-1A PS7200R-1A-E3 PS7200R-1A-E4 PS7200R-1A-F3 PS7200R-1A-F4 NEC 2401
Contextual Info: DATA SHEET Solid State Relay OCMOS FET PS7200R-1A 4-PIN SOP, 1.1 pF LOW OUTPUT CAPACITANCE 1-ch Optical Coupled MOS FET DESCRIPTION The PS7200R-1A is a low output capacitance solid state relay containing a GaAs LED on the light emitting side input side and MOS FETs on the output side.

PS7200A-1A-A

Abstract: PS7200A-1A-E4 PS7200A-1A-F3 PS7200A-1A-F4 PS7200A-1A PS7200A-1A-E3 PS7200A-1A-E3-A
Contextual Info: Solid State Relay OCMOS FET PS7200A-1A 4-PIN SOP, 3.0 pF LOW OUTPUT CAPACITANCE −NEPOC 1-ch Optical Coupled MOS FET Series− DESCRIPTION The PS7200A-1A is a low output capacitance solid state relay containing GaAs LEDs on the light emitting side input side and MOS FETs on the output side.

PS7802-1A

Abstract: PS7802-1A-F3 PS7802-1A-F4
Contextual Info: DATA SHEET Solid State Relay OCMOS FET PS7802-1A 4-PIN ULTRA SMALL FLAT-LEAD, LOW OUTPUT CAPACITANCE, 1-ch Optical Coupled MOS FET DESCRIPTION The PS7802-1A is a low output capacitance solid state relay containing a GaAs LED on the light emitting side input side and MOS FETs on the output side.

PS7200R-1A

Abstract: PS7200R-1A-A PS7200R-1A-E3 PS7200R-1A-E4 PS7200R-1A-F3 PS7200R-1A-F4
Contextual Info: Solid State Relay OCMOS FET PS7200R-1A 4-PIN SOP, 1.1 pF LOW OUTPUT CAPACITANCE −NEPOC 1-ch Optical Coupled MOS FET Series− DESCRIPTION The PS7200R-1A is a low output capacitance solid state relay containing a GaAs LED on the light emitting side input side and MOS FETs on the output side.

PS7801-1A

Abstract: PS7801-1A-F3 PS7801-1A-F4
Contextual Info: DATA SHEET Solid State Relay OCMOS FET PS7801-1A 4-PIN ULTRA SMALL FLAT-LEAD, LOW OUTPUT CAPACITANCE, 1-ch Optical Coupled MOS FET DESCRIPTION The PS7801-1A is a low output capacitance solid state relay containing a GaAs LED on the light emitting side input side and MOS FETs on the output side.

RDX030N60

Abstract: 54mH
Contextual Info: RDX030N60 Transistors 10V Drive Nch MOS FET RDX030N60 zStructure Silicon N-channel MOS FET zExternal dimensions Unit : mm TO-220FM 10.0 φ3.2 4.5 8.0 1.2 1.3 14.0 2.5 15.0 zFeatures 1) Low on-resistance. 2) Low input capacitance. 3) Excellent resistance to damage from static electricity.

RDN150N20

Abstract: 100V 100A mos fet
Contextual Info: RDN150N20 Transistors 10V Drive Nch MOS FET RDN150N20 zExternal dimensions Unit : mm zStructure Silicon N-channel MOS FET TO-220FN 4.5 φ3.2 2.8 1.2 1.3 14.0 5.0 8.0 15.0 zFeatures 1) Low on-resistance. 2) Low input capacitance. 3) Exellent resistance to damage from static electricity.

RDN080N25

Contextual Info: RDN080N25 Transistors 10V Drive Nch MOS FET RDN080N25 zExternal dimensions Unit : mm zStructure Silicon N-channel MOS FET TO-220FN 4.5 φ3.2 2.8 1.2 1.3 14.0 5.0 8.0 15.0 zFeatures 1) Low on-resistance. 2) Low input capacitance. 3) Exellent resistance to damage from static electricity.

RDX120N50

Contextual Info: RDX120N50 Transistors 10V Drive Nch MOS FET RDX120N50 zStructure Silicon N-channel MOS FET zExternal dimensions Unit : mm TO-220FM 10.0 φ3.2 4.5 8.0 1.2 1.3 14.0 2.5 15.0 zFeatures 1) Low on-resistance. 2) Low input capacitance. 3) Excellent resistance to damage from static electricity.

rdx*100n60

Abstract: RDX100N60 10A 600V MOS
Contextual Info: RDX100N60 Transistors 10V Drive Nch MOS FET RDX100N60 zStructure Silicon N-channel MOS FET zExternal dimensions Unit : mm TO-220FM 10.0 φ3.2 4.5 8.0 1.2 1.3 14.0 2.5 15.0 zFeatures 1) Low on-resistance. 2) Low input capacitance. 3) Excellent resistance to damage from static electricity.

RDX080N50

Contextual Info: RDX080N50 Transistors 10V Drive Nch MOS FET RDX080N50 zStructure Silicon N-channel MOS FET zExternal dimensions Unit : mm TO-220FM φ3.2 10.0 4.5 8.0 1.2 1.3 14.0 2.5 15.0 zFeatures 1) Low on-resistance. 2) Low input capacitance. 3) Excellent resistance to damage from static electricity.

RDX050N50

Abstract: voltage 10v mos fet Z diode
Contextual Info: RDX050N50 Transistors 10V Drive Nch MOS FET RDX050N50 zStructure Silicon N-channel MOS FET zExternal dimensions Unit : mm TO-220FM 10.0 φ3.2 4.5 8.0 1.2 1.3 14.0 2.5 15.0 zFeatures 1) Low on-resistance. 2) Low input capacitance. 3) Excellent resistance to damage from static electricity.

PS7200K-1A

Abstract: PS7200K-1A-A PS7200K-1A-E4 PS7200K-1A-F3 PS7200K-1A-F4 n601
Contextual Info: Solid State Relay OCMOS FET PS7200K-1A 4-PIN SOP, 1.1 Ω LOW ON-STATE RESISTANCE −NEPOC 1-ch Optical Coupled MOS FET Series− DESCRIPTION The PS7200K-1A is a low output capacitance solid state relay containing a GaAs LED on the light emitting side input side and MOS FETs on the output side.

PS7200K-1A

Abstract: PS7200K-1A-E4 PS7200K-1A-F3 PS7200K-1A-F4
Contextual Info: DATA SHEET Solid State Relay OCMOS FET PS7200K-1A 4-PIN SOP, 1.1 Ω LOW ON-STATE RESISTANCE 1-ch Optical Coupled MOS FET DESCRIPTION The PS7200K-1A is a low output capacitance solid state relay containing a GaAs LED on the light emitting side input side and MOS FETs on the output side.

Contextual Info: Preliminary Datasheet RJK2061JPE R07DS0369EJ0100 Rev.1.00 May 12, 2011 Silicon N Channel MOS FET High Speed Power Switching Features • • • • For Automotive application AEC-Q101 compliant Low on-resistance : RDS on = 55 mΩ typ. Low input capacitance : Ciss = 1850 pF typ

Contextual Info: Product specification Philips Semiconductors BF998WR N-channel dual-gate MOS-FET PINNING FEATURES • High forward transfer admittance • Short channel transistor with high forward transfer admittance to input capacitance ratio • Low noise gain controlled amplifier up to 1 GHz.

Contextual Info: Preliminary Datasheet RJK1209JPE 120V - 80A - N Channel Power MOS FET High Speed Power Switching R07DS0691EJ0100 Rev.1.00 Mar 08, 2012 Features • • • • For Automotive application AEC-Q101 compliant Low on-resistance : RDS on = 14 mΩ typ. Low input capacitance: Ciss = 4600 pF typ

RJK1206JPD-00-J3

Abstract: RJK1206JPD
Contextual Info: Preliminary Datasheet RJK1206JPD 120 V - 30 A - N Channel Power MOS FET High Speed Power Switching R07DS0690EJ0300 Rev.3.00 May 23, 2013 Features • • • • For Automotive application AEC-Q101 compliant Low on-resistance : RDS on = 41 mΩ typ. Low input capacitance: Ciss = 1600 pF typ

Contextual Info: Preliminary Datasheet RJK0631JPD Silicon N Channel Power MOS FET High Speed Power Switching R07DS0252EJ0200 Rev2.00 May 23, 2013 Features • • • • • For Automotive application Low on-resistance : RDS on = 12 mΩ typ. Capable of 4.5 V gate drive Low input capacitance: Ciss = 1350 pF typ

2SK1414

Abstract: ir 9637
Contextual Info: Ordering num ber: EN 4 2 3 0 _ 2SK1414 No.4230 N-Channel MOS Silicon FET High-Voltage High-Speed Switching Applications F e a tu r e s - Low ON resistance, low input capacitance, very high-speed switching. • H igh reliability Adoption of H VP process .

Contextual Info: PRELIMINARY DATA SHEET NEC's 4-PIN SOP LOW OFF-STATE LEAKAGE CURRENT PS7200U-1A 1-ch OPTICAL COUPLED MOS FET DESCRIPTION FEATURES NEC's PS7200U-1A is a low output capacitance solid state • LOW OFF-STATE LEAKAGE CURRENT: ILoff = 0.1 nA TYP. relay containing GaAs LEDs on the light emitting side input

3sk286

Contextual Info: 3SK286 High Frequency FETs 3SK286 Silicon N-Channel MOS Unit : mm For VHF amplification +0.2 2.8 –0.3 1.5 –0.3 Low noise-figure NF 0.65±0.15 ● Downsizing of sets by mini power package and automatic insertion 3 2 +0.1 Small variation (∆Ciss) of the input capacitance in AGC operation

Q2SC

Contextual Info: Panasonic High Frequency FETs 3SK286 Silicon N-Channel MOS FET For VHF a m p lific a tio n unit: mm • Features 0 Low noise-figure NF 0 Large power gain PG 0 Small variation (ACiss) of the input capacitance during AGC operation 0 Mini-type package, allowing downsizing of the sets and automatic

PFA113A

Abstract: NEC 2705 opto PFA1AN PFA141B PFA122A PFA141A PFA141E ps7200 PFA112A PFA222A
Contextual Info: OPTICAL COUPLED MOS FET SELECTION GUIDE September 2000 [MEMO] 2 Selection Guide P11633EJAV0SG00 CAUTION Within this device there exits GaAs Gallium Arsenide material which is a harmful substance if ingested. Please do not under any circumstances break the