LOW FORWARD VOLTAGE DROP DIODE BRIDGE Search Results

GBJ2510

Abstract: smd diode marking 77
Contextual Info: Comchip Glass Passivated Bridge Rectifiers SMD Diode Specialist GBJ25005-G Thru. GBJ2510-G Reverse Voltage: 50 to 1000V Forward Current: 25.0A RoHS Device GBJ - Rating to 1000V PRV. -Ideal for printed circuit board -Low forward voltage drop, high current capability.

MBSK14SE

Contextual Info: Comchip Low VF SMD Schottky Bridge Rectifiers SMD Diode Specialist CDBHM120L-HF Thru. CDBHM1100L-HF Reverse Voltage: 20 to 100 Volts Forward Current: 1.0 Amp RoHS Device Halogen Free MBS Features 0.140 0.35 0.006(0.15) -Ideal for printed circuit board -High current capability,Low Forward voltage drop

DMA10I1600PA

Contextual Info: DMA10I1600PA final for release Standard Rectifier F = Single Diode Part number Backside: cathode 3 Features / Advantages: Planar passivated chips Very low leakage current Very low forward voltage drop Improved thermal behaviour 1 Applications: Diode for main rectification

PB10S1

Contextual Info: DIODE Type:PB10S1,2,4,6 OUTLINE DRAWING SINGLE – PHASE SILICON BRIDGE RECTIFIER FEATURES * Surge Overload Rating : 150 Amperes Peak * Low Forward Voltage Drop * Mounting Position : Any Maximum Ratings Rating Repetitive Peak Reverse Voltage Non-repetitive Peak Reverse Voltage

PB10S4

Abstract: pb10s2 PB10S1 PB10S6
Contextual Info: DIODE Type:PB10S1,2,4,6 OUTLINE DRAWING SINGLE – PHASE SILICON BRIDGE RECTIFIER FEATURES * Surge Overload Rating : 150 Amperes Peak * Low Forward Voltage Drop * Mounting Position : Any Maximum Ratings Rating Repetitive Peak Reverse Voltage Non-repetitive Peak Reverse Voltage

smd code diode 20a

Contextual Info: Comchip Glass Passivated Bridge Rectifiers SMD Diode Specialist DF2005-G Thru. DF210-G Reverse Voltage: 50 to 1000V Forward Current: 2.0A RoHS Device DF Features -Rating to 1000V PRV 0.335 8.50 0.307(7.80) -Ideal for printed circuit board -Low forward voltage drop,high current capability

smd DIODE code marking 20A

Abstract: smd code diode 20a
Contextual Info: Comchip Glass Passivated Bridge Rectifiers SMD Diode Specialist DF2005-G Thru. DF210-G Reverse Voltage: 50 to 1000V Forward Current: 2.0A RoHS Device Features DF -Rating to 1000V PRV -Ideal for printed circuit board 0.335 8.50 0.307(7.80) -Low forward voltage drop,high current capability

vishay smd diode code marking

Abstract: 20ETS12S 12 pulse diode rectifier DIODE RECTIFIER BRIDGE SINGLE high power rectifier diode single smd fuse marking 20 three phase half wave Rectifier 20ETS 20ETS08S AN-994
Contextual Info: 20ETS.S High Voltage Series Vishay High Power Products Input Rectifier Diode, 20 A DESCRIPTION/FEATURES The 20ETS.S rectifier High Voltage Series has been optimized for very low forward voltage drop, with moderate leakage. The glass passivation technology

Contextual Info: 8EWS16SPbF High Voltage Series Vishay High Power Products Surface Mountable Input Rectifier Diode, 8 A DESCRIPTION/FEATURES Base cathode 4 D-PAK The 8EWS16SPbF rectifier High Voltage Series has been optimized for very low forward voltage drop, with moderate leakage. The

Contextual Info: 8EWS16SPbF High Voltage Series Vishay High Power Products Surface Mountable Input Rectifier Diode, 8 A DESCRIPTION/FEATURES Base cathode 4 D-PAK The 8EWS16SPbF rectifier High Voltage Series has been optimized for very low forward voltage drop, with moderate leakage. The

Contextual Info: 8EWS16SPbF High Voltage Series Vishay High Power Products Surface Mountable Input Rectifier Diode, 10 A DESCRIPTION/FEATURES Base cathode 4 D-PAK The 8EWS16SPbF rectifier High Voltage Series has been optimized for very low forward voltage drop, with moderate leakage. The

845i

Contextual Info: 5SDD 09D6000 5SDD 09D6000 Old part no. DV 827-850-60 High Voltage Diode Key Parameters V RRM = 6 000 I FAVm = 845 I FSM = 11 000 V TO = 0.893 rT = 0.647 Properties Low forward voltage drop Low recovery charge High operating temperature Low leakage current

Contextual Info: VS-60EPS16PbF, VS-60EPS16-M3 www.vishay.com Vishay Semiconductors High Voltage Input Rectifier Diode, 60 A FEATURES Base cathode • Very low forward voltage drop • 150 °C max. operating junction temperature 2 • Designed and JEDEC-JESD47 qualified according

Contextual Info: VS-60EPS16PbF, VS-60EPS16-M3 www.vishay.com Vishay Semiconductors High Voltage Input Rectifier Diode, 60 A FEATURES Base cathode • Very low forward voltage drop • 150 °C max. operating junction temperature 2 • Designed and JEDEC-JESD47 qualified according

A10000T

Contextual Info: 5SDD 17F6000 5SDD 17F6000 Old part no. DV 818-1700-60 High Voltage Diode Properties Key Parameters V RRM = 6 000 I FAVm = 1 704 I FSM = 19 000 V TO = 0.894 rT = 0.344 Low forward voltage drop Low recovery charge High operating temperature Low leakage current

Contextual Info: 5SDD 14F6000 5SDD 14F6000 Old part no. DV 808-1360-60 High Voltage Diode Properties Key Parameters V RRM = 6 000 I FAVm = 1 363 I FSM = 17 500 V TO = 1.015 rT = 0.407 Low forward voltage drop Low recovery charge High operating temperature Low leakage current

5SDD10F6000

Contextual Info: 5SDD 10F6000 5SDD 10F6000 Old part no. DV 808-1000-60 High Voltage Diode Properties Key Parameters V RRM = 6 000 I FAVm = 1 363 I FSM = 17 500 V TO = 1.015 rT = 0.407 Low forward voltage drop Low recovery charge High operating temperature Low leakage current

Contextual Info: 5SDD 06D6000 5SDD 06D6000 Old part no. DV 817-630-60 High Voltage Diode Properties Key Parameters V RRM = 6 000 I FAVm = 662 I FSM = 10 500 V TO = 1.066 rT = 0.778 Low forward voltage drop Low recovery charge High operating temperature Low leakage current

Contextual Info: VS-80APS16PbF, VS-80APS16-M3 www.vishay.com Vishay Semiconductors High Voltage, Input Rectifier Diode, 80 A FEATURES Base • Very low forward voltage drop cathode + 2 • 150 °C max. operating junction temperature • Designed and qualified JEDEC -JESD47

Contextual Info: VS-40EPS16PbF, VS-40EPS16-M3 www.vishay.com Vishay Semiconductors High Voltage, Input Rectifier Diode, 40 A FEATURES Base cathode • Very low forward voltage drop • 150 °C max. operating junction temperature 2 • Designed and qualified JEDEC -JESD47

JEDEC-JESD47

Abstract: 80aps16
Contextual Info: VS-80APS16PbF, VS-80APS16-M3 www.vishay.com Vishay Semiconductors High Voltage, Input Rectifier Diode, 80 A FEATURES • Very low forward voltage drop Base cathode 4, 2 • 150 °C max. operating junction temperature • Designed and JEDEC-JESD47 qualified

Contextual Info: VS-40EPS16PbF, VS-40EPS16-M3 www.vishay.com Vishay Semiconductors High Voltage, Input Rectifier Diode, 40 A FEATURES Base cathode • Very low forward voltage drop • 150 °C max. operating junction temperature 2 • Designed and JEDEC-JESD47 qualified according

vs20ets16pbf

Contextual Info: VS-20ETS16PbF, VS-20ETS16-M3 www.vishay.com Vishay Semiconductors High Voltage, Input Rectifier Diode, 20 A FEATURES • Very low forward voltage drop Base cathode 2 • 150 °C max. operating junction temperature • Designed and JEDEC-JESD47 qualified according

Contextual Info: VS-80APS16PbF, VS-80APS16-M3 www.vishay.com Vishay Semiconductors High Voltage, Input Rectifier Diode, 80 A FEATURES • Very low forward voltage drop Base cathode 4, 2 • 150 °C max. operating junction temperature • Designed and JEDEC-JESD47 qualified