LOW BARRIER SCHOTTKY Search Results

Contextual Info: 5082-2271 SCHOTTKY BARRIER DUAL DIODE DESCRIPTION: The 5082-2271 is a Low Barrier Schottky Barrier Dual Diode Designed for Single Balanced Mixer, Phase Detector and Modulator Applications up to 4 GHz. PACKAGE STYLE 867 FEATURES INCLUDE: • Low Barrier • Excellent Matching

DUAL DIODE

Contextual Info: 5082-2279 SCHOTTKY BARRIER DUAL DIODE DESCRIPTION: The 5082-2279 is a Low Barrier Schottky Barrier Dual Diode Designed for Single Balanced Mixer, Phase Detector and Modulator Applications up to 12 GHz. PACKAGE STYLE 825 FEATURES INCLUDE: • Low Barrier • Excellent Matching

DMF-3070

Contextual Info: 5082-2271 SCHOTTKY BARRIER DUAL DIODE DESCRIPTION: The 5082-2271 is a Low Barrier Schottky Barrier Dual Diode Designed for Single Balanced Mixer, Phase Detector and Modulator Applications up to 4 GHz. PACKAGE STYLE 825 FEATURES INCLUDE: • Low Barrier • Excellent Matching

BYV133

Abstract: BYV133F
Contextual Info: Philips Semiconductors Product specification Rectifier diodes schottky barrier GENERAL DESCRIPTION BYV133F series QUICK REFERENCE DATA Dual, low leakage, platinum barrier, schottky barrier rectifier diodes in a full pack, plastic envelope featuring low forward voltage drop and

PBYR1045

Abstract: PBYR1045F PBYR2045CTF
Contextual Info: Philips Semiconductors Product specification Rectifier diodes schottky barrier GENERAL DESCRIPTION Dual, low leakage, platinum barrier, schottky barrier rectifier diodes in a full pack, plastic envelope featuring low forward voltage drop and absence of stored charge. These

BYV118

Abstract: BYV118F PBYR645CT
Contextual Info: Philips Semiconductors Product specification Rectifier diodes schottky barrier GENERAL DESCRIPTION BYV118F series QUICK REFERENCE DATA Dual, low leakage, platinum barrier, schottky barrier rectifier diodes in a full pack plastic envelope featuring low forward voltage drop and

BYV143

Abstract: BYV143F PBYR745
Contextual Info: Philips Semiconductors Product specification Rectifier diodes schottky barrier GENERAL DESCRIPTION BYV143F series QUICK REFERENCE DATA Dual, low leakage, platinum barrier, schottky barrier rectifier diodes in a full pack, plastic envelope featuring low forward voltage drop and

DIODE 1439

Abstract: PBYR745 PBYR745F PBYR1545CTF 1439 diode
Contextual Info: Philips Semiconductors Product specification Rectifier diodes schottky barrier GENERAL DESCRIPTION Dual, low leakage, platinum barrier, schottky barrier rectifier diodes in a full pack, plastic envelope featuring low forward voltage drop and absence of stored charge. These

45PTF

Abstract: 109 DIODE PBYR1645 PBYR1645F PBYR3045PTF pbyr3045
Contextual Info: Philips Semiconductors Product specification Rectifier diodes schottky barrier GENERAL DESCRIPTION Dual, low leakage, platinum barrier, schottky barrier rectifier diodes in a full pack, plastic envelope featuring low forward voltage drop and absence of stored charge. These

PBYR1645

Abstract: PBYR3045PTF PBYR1645F
Contextual Info: Philips Semiconductors Product specification Rectifier diodes schottky barrier GENERAL DESCRIPTION Dual, low leakage, platinum barrier, schottky barrier rectifier diodes in a full pack, plastic envelope featuring low forward voltage drop and absence of stored charge. These

PBYR1645

Abstract: PBYR1645F PBYR2545CTF FULL WAVE RECTIFIER CIRCUITS
Contextual Info: Philips Semiconductors Product specification Rectifier diodes schottky barrier GENERAL DESCRIPTION Dual, low leakage, platinum barrier, schottky barrier rectifier diodes in a full pack, plastic envelope featuring low forward voltage drop and absence of stored charge. These

MPEN-230AF

Abstract: sanken sanken power transistor CF35
Contextual Info: Schottky Barrier Diode MPEN-230AF December. 2005 •General Description ■Package-TO-262 High Voltage Schottky Barrier Diode 100V . The low leakage current and low VF have been achieved by using the optimum barrier metal. ■Applications • DC-DC converters

diode B105

Abstract: Sanken catalogue MPEN-230AF
Contextual Info: Schottky Barrier Diode MPEN-230AF December. 2005 •General Description ■Package-TO-262 High Voltage Schottky Barrier Diode 100V . The low leakage current and low VF have been achieved by using the optimum barrier metal. ■Applications • DC-DC converters

Contextual Info: Schottky Barrier Diode MPEN-230AF December. 2005 •General Description ■Package-TO-262 High Voltage Schottky Barrier Diode 100V . The low leakage current and low VF have been achieved by using the optimum barrier metal. ■Applications • DC-DC converters

schematic diagram UPS

Abstract: SanRex BKR400AB10 SanRex ups schematic diode schottky 200A diode schottky 400A power supply 100v 30a schematic UPS design BKR400AB10 SCHOTTKY RECTIFIER 400A
Contextual Info: SanRex Schottky Barrier Diode BKR400AB10 IO AV = 400A, VRRM=100V, VFM=0.68V SanRex outstanding metal barrier technology allows BKR400AB10 Schottky Barrier Diode Module to feature a very low forward voltage drop. This device also has low leakage current, low thermal resistance and improved avalanche energy

RB080L-30

Abstract: Rohm Schottky Barrier Diodes
Contextual Info: RB080L-30 | Schottky Barrier Diodes | Discrete Semiconductors | ROHM CO., LTD. 1 Schottky Barrier Diodes RB080L-30 [ Product description ] Outline ROHM's schottky barrier diodes are low VF, low IR and high ESD resistant, suitable for PC,mobile phone and various portable electronics.

Contextual Info: 2SB139100MA 2SB139100MA LOW IR SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION 2SB139100MA is a schottky barrier diode chips Ø Due to special schottky barrier structure, the Lb fabricated in silicon epitaxial planar technology; La Ø chips have very low reverse leakage current typical

Contextual Info: 2SB267100MA 2SB267100MA LOW IR SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION 2SB267100MA is a schottky barrier diode chips Ø Due to special schottky barrier structure, the Lb fabricated in silicon epitaxial planar technology; La Ø chips have very low reverse leakage current typical

FME-210B

Abstract: sanken CF35 Sanken catalog
Contextual Info: Schottky Barrier Diode FME-210B April. 2007 •General Description ■Package-TO220F FME-210B is a High Voltage 150V Schottky Barrier Diode, and has achieved low leakage current and low VF by selecting the best barrier metal. ■Applications ●DC-DC converters

sanken power transistor

Abstract: SJPB-D4
Contextual Info: http://www.sanken-ele.co.jp SANKEN ELECTRIC SJPB-D4 Mar. 2008 Schottky Barrier Rectifier General Description Package SJPB-D4B is a Schottky Barrier Diode, and has achieved low leakage current and low VF by selecting the best barrier metal. Applications ●DC-DC converters

sanken power transistor

Abstract: for rectifier
Contextual Info: http://www.sanken-ele.co.jp SANKEN ELECTRIC SJPB-D6 Mar. 2008 Schottky Barrier Rectifier General Description Package SJPB-D6 is a Schottky Barrier Diode, and has achieved low leakage current and low VF by selecting the best barrier metal. Applications ●DC-DC converters

SANKEN

Abstract: sanken power transistor
Contextual Info: http://www.sanken-ele.co.jp SANKEN ELECTRIC SJPJ-L3 Mar. 2008 Schottky Barrier Rectifier General Description Package SJPJ-L3 is a Schottky Barrier Diode, and has achieved low leakage current and low VF by selecting the best barrier metal. Applications ●DC-DC converters

sanken power transistor

Abstract: "Sanken Electric"
Contextual Info: http://www.sanken-ele.co.jp SANKEN ELECTRIC SJPB-D9 Mar. 2008 Schottky Barrier Rectifier General Description Package SJPB-D9 is a Schottky Barrier Diode, and has achieved low leakage current and low VF by selecting the best barrier metal. Applications ●DC-DC converters

sanken power transistor

Abstract: CF35 FMEN-220A sanken DSA0016518 Sanken catalog "Sanken Rectifiers"
Contextual Info: Schottky Barrier Diode FMEN-220A March, 2006 •General Description ■Package-TO220F FMEN-220A is a High Voltage 100V Schottky Barrier Diode, and has achieved low leakage current and low VF by selecting the best barrier metal. ■Applications ● DC-DC converters