LOGIC LEVEL LOW RDSON Search Results

adp190

Contextual Info: Logic Controlled, High-Side Power Switch ADP190 FEATURES TYPICAL APPLICATIONS CIRCUIT VIN + – ADP190 VOUT GND EN LEVEL SHIFTER LOAD 07874-001 Low RDSON of 105 mΩ @ 1.8 V Low input voltage range: 1.2 V to 3.6 V 500 mA continuous operating current Built-in level shift for control logic that can be operated by

adp190

Contextual Info: Logic Controlled, High-Side Power Switch ADP190 FEATURES TYPICAL APPLICATIONS CIRCUIT VIN + – ADP190 VOUT GND EN LEVEL SHIFTER LOAD 07874-001 Low RDSON of 105 mΩ @ 1.8 V Low input voltage range: 1.2 V to 3.6 V 500 mA continuous operating current Built-in level shift for control logic that can be operated by

ADP195

Contextual Info: Logic Controlled, High-Side Power Switch with Reverse Current Blocking ADP195 Low RDSON of 65 mΩ @ 1.8 V Low input voltage range: 1.1 V to 3.6 V >1 A continuous operating current @ 85°C Built-in level shift for control logic that can be operated by 1.2 V logic

phd66nq03lt

Abstract: PHP/PHB/PHD66NQ03LT
Contextual Info: PHP/PHB/PHD66NQ03LT N-channel TrenchMOS logic level FET Rev. 05 — 15 April 2004 Product data 1. Product profile 1.1 Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS™ technology. 1.2 Features • Low on-state resistance

adp198

Contextual Info: FEATURES TYPICAL APPLICATION CIRCUITS Low RDSON of 50 mΩ @ 3.3 V WLCSP only Low input voltage range: 1.65 V to 6.5 V 1 A continuous operating current Built-in level shift for control logic that can be operated by 1.2 V logic Low 2.5 A quiescent current @ VIN = 2.8 V

Contextual Info: FEATURES TYPICAL APPLICATION CIRCUITS Low RDSON of 50 mΩ @ 3.3 V WLCSP only Low input voltage range: 1.65 V to 6.5 V 1 A continuous operating current Built-in level shift for control logic that can be operated by 1.2 V logic Low 2.5 A quiescent current @ VIN = 2.8 V

adp198

Contextual Info: FEATURES TYPICAL APPLICATION CIRCUITS Low RDSON of 50 mΩ @ 3.3 V WLCSP only Low input voltage range: 1.65 V to 6.5 V 1 A continuous operating current Built-in level shift for control logic that can be operated by 1.2 V logic Low 2.5 A quiescent current @ VIN = 2.8 V

adp198

Abstract: CP810 D0948
Contextual Info: FEATURES TYPICAL APPLICATION CIRCUITS Low RDSON of 50 mΩ @ 3.3 V WLCSP only Low input voltage range: 1.65 V to 6.5 V 1 A continuous operating current Built-in level shift for control logic that can be operated by 1.2 V logic Low 2.5 A quiescent current @ VIN = 2.8 V

adp198

Contextual Info: FEATURES TYPICAL APPLICATION CIRCUITS Low RDSON of 50 mΩ @ 3.3 V WLCSP only Low input voltage range: 1.65 V to 6.5 V 1 A continuous operating current Built-in level shift for control logic that can be operated by 1.2 V logic Low 2.5 A quiescent current @ VIN = 2.8 V

adp198

Contextual Info: FEATURES TYPICAL APPLICATION CIRCUITS Low RDSON of 50 mΩ @ 3.3 V WLCSP only Low input voltage range: 1.65 V to 6.5 V 1 A continuous operating current Built-in level shift for control logic that can be operated by 1.2 V logic Low 2.5 A quiescent current @ VIN = 2.8 V

Contextual Info: FEATURES TYPICAL APPLICATION CIRCUITS Low RDSON of 50 mΩ @ 3.3 V WLCSP only Low input voltage range: 1.65 V to 6.5 V 1 A continuous operating current Built-in level shift for control logic that can be operated by 1.2 V logic Low 2.5 A quiescent current @ VIN = 2.8 V

AUIPS2052

Abstract: AUIPS2051
Contextual Info: November, 14th 2011 Automotive grade AUIPS2051L/AUIPS2052G INTELLIGENT POWER LOW SIDE SWITCH Features Product Summary Over temperature shutdown Over current shutdown Active clamp Low current & logic level input ESD protection Optimized Turn On/Off for EMI

B90P06

Abstract: MTB9
Contextual Info: Spec. No. : C733J3 Issued Date : 2009.07.07 Revised Date : Page No. : 1/7 CYStech Electronics Corp. P-Channel Logic Level Enhancement Mode Power MOSFET MTB90P06J3 BVDSS -60V ID -10A RDSON MAX 90.8mΩ Features • Low Gate Charge • Simple Drive Requirement

BB0P10

Abstract: MTBB0P10J3
Contextual Info: Spec. No. : C732J3 Issued Date : 2009.07.07 Revised Date : Page No. : 1/7 CYStech Electronics Corp. P-Channel Logic Level Enhancement Mode Power MOSFET MTBB0P10J3 BVDSS -100V ID -10A RDSON MAX 205mΩ Features • Low Gate Charge • Simple Drive Requirement

BA5N10

Abstract: MTBA5N10J3 TO-252 MOSFET p channel C731J3
Contextual Info: Spec. No. : C731J3 Issued Date : 2009.07.07 Revised Date : Page No. : 1/7 CYStech Electronics Corp. N -Channel Logic Level Enhancement Mode Power MOSFET MTBA5N10J3 BVDSS 100V ID 10A RDSON MAX 150mΩ Features • Low Gate Charge • Simple Drive Requirement

FDC655BN

Contextual Info: FDC655BN Single N-Channel, Logic Level, PowerTrench MOSFET Features General Description • 6.3 A, 30 V. RDS ON = 25 mΩ @ VGS = 10 V RDS(ON) = 33 mΩ @ VGS = 4.5 V ■ Fast switching ■ Low gate charge ■ High performance trench technology for extremely low Rdson

08629

Contextual Info: Logic Controlled, High-Side Power Switch ADP194 FEATURES TYPICAL APPLICATIONS CIRCUIT ADP194 REVERSE POLARITY PROTECTION VOUT VIN + – GND EN ON LEVEL SHIFT AND SLEW RATE CONTROL LOAD 08629-001 Low RDSON of 80 mΩ at 1.8 V Low input voltage range: 1.1 V to 3.6 V

Contextual Info: FDP5800 N-Channel Logic Level PowerTrench MOSFET tm 60V,80A, 6mΩ Features Applications • RDS on = 4.6mΩ (Typ.), VGS = 10V, ID = 80A • Motor/ Body Load Control • High performance trench technology for extermly low Rdson • Power Train Management

marking h3a

Abstract: 4DPA auips2041ltr
Contextual Info: November, 14th 2011 Automotive grade AUIPS2041 R (L) INTELLIGENT POWER LOW SIDE SWITCH Features Product Summary Over temperature shutdown Over current shutdown Active clamp Low current & logic level input ESD protection Optimized Turn On/Off for EMI Diagnostic on the input current

IPS2031R

Abstract: IPS2031 AEC-Q100-002 AEC-Q100
Contextual Info: December, 9th 2010 Automotive grade AUIPS2031R INTELLIGENT POWER LOW SIDE SWITCH Features •       Product Summary Over temperature shutdown Over current shutdown Active clamp Low current & logic level input ESD protection Optimized Turn On/Off for EMI

fdp5800

Abstract: smart ups 750 circuit
Contextual Info: FDP5800 N-Channel Logic Level PowerTrench MOSFET tm 60V,80A, 6mΩ Features Applications • RDS on = 4.6mΩ (Typ.), VGS = 10V, ID = 80A • Motor/ Body Load Control • High performance trench technology for extermly low Rdson • Power Train Management

IPS022G

Abstract: MS-012AA RESISTOR footprint dimension
Contextual Info: Data Sheet No.PD60203 IPS022G DUAL FULLY PROTECTED POWER MOSFET SWITCH Features • • • • • Product Summary Over temperature shutdown Over current shutdown Active clamp Low current & logic level input E.S.D protection Description The IPS022G are fully protected dual low side SMART

IPS024G

Abstract: MS-012AC
Contextual Info: Data Sheet No.PD60204 IPS024G QUAD FULLY PROTECTED POWER MOSFET SWITCH Features • • • • • Product Summary Over temperature shutdown Over current shutdown Active clamp Low current & logic level input E.S.D protection Description The IPS024G are fully protected quad low side SMART

E5 sot223

Abstract: AUIPS2052G AEC-Q100 AUIPS2051L
Contextual Info: March, 23rd 2009 Automotive grade AUIPS2051L/AUIPS2052G INTELLIGENT POWER LOW SIDE SWITCH Features • • • • • • • Product Summary Over temperature shutdown Over current shutdown Active clamp Low current & logic level input ESD protection Optimized Turn On/Off for EMI