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    LN66L Search Results

    LN66L Datasheets (8)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    LN66(L)
    Panasonic Infrared Light Emitting Diodes Original PDF 56.39KB 4
    LN66L
    Panasonic GaAs Infrared Light Emitting Diode Original PDF 42.34KB 3
    LN66L
    Panasonic GaAs Infrared Light Emitting Diode Original PDF 56.34KB 4
    LN66(L)
    Unknown The Optical Devices Data Book (Japanese) Scan PDF 504.45KB 21
    LN66L
    Panasonic Light Emitting Diodes Scan PDF 78.67KB 1
    LN66L
    Panasonic Light Emitting Diodes LED Scan PDF 78.02KB 1
    LN66LR
    Panasonic GaAs Infrared Light Emitting Diode Original PDF 56.35KB 4
    LN66LS
    Panasonic GaAs Infrared Light Emitting Diode Original PDF 56.35KB 4

    LN66L Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    LN66L

    Contextual Info: Infrared Light Emitting Diodes LN66L GaAs Infrared Light Emitting Diode Unit : mm ø5.0±0.2 1.0 7.65±0.2 Not soldered 2.25 For optical control systems Features High-power output, high-efficiency :PO = 8 mW typ. Good radiant power output linearity with respect to input current


    Original
    LN66L LN66L PDF

    LN66

    Abstract: LN66L
    Contextual Info: Infrared Light Emitting Diodes LN66L LN66(L GaAs Infrared Light Emitting Diode Unit : mm ø5.0±0.2 1.0 7.65±0.2 Not soldered 2.25 For optical control systems Features High-power output, high-efficiency :PO = 8 mW (typ.) Good radiant power output linearity with respect to input current


    Original
    LN66L LN66 LN66L PDF

    Contextual Info: Infrared Light Emitting Diodes LN66L LN66(L GaAs Infrared Light Emitting Diode Unit : mm ø5.0±0.2 1.0 7.65±0.2 Not soldered 2.25 For optical control systems Features M Di ain sc te on na tin nc ue e/ d High-power output, high-efficiency :PO = 8 mW (typ.)


    Original
    LN66L PDF

    GE 7652

    Contextual Info: Infrared Light Emitting Diodes LN66L LN66(L GaAs Infrared Light Emitting Diode Unit : mm 1.0 7.65±0.2 For optical control systems Not soldered 2.25 ø5.0±0.2 M Di ain sc te on na tin nc ue e/ d Features High-power output, high-efficiency :PO = 8 mW (typ.)


    Original
    LN66L GE 7652 PDF

    LN66

    Abstract: LN66L
    Contextual Info: Infrared Light Emitting Diodes LN66L LN66(L GaAs Infrared Light Emitting Diode Unit : mm M Di ain sc te on na tin nc ue e/ d 1.0 7.65±0.2 For optical control systems Not soldered 2.25 ø5.0±0.2 Features ue pl d in an c se ed lud pl vi an m m es si tf


    Original
    LN66L LN66 LN66L PDF