LN4812LT1G Search Results
LN4812LT1G Datasheets Context Search
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Contextual Info: LESHAN RADIO COMPANY, LTD. 30V N-Channel Enhancement-Mode MOSFET VDS= 30V RDS ON , Vgs@10V, Ids@8.5A = 38mΩ RDS(ON), Vgs@4.5V, Ids@5A = 52mΩ LN4812LT1G 3 Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance High Power and Current Handling Capability |
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LN4812LT1G 236AB) OT-23 | |
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Contextual Info: LESHAN RADIO COMPANY, LTD. 30V N-Channel Enhancement-Mode MOSFET VDS= 30V RDS ON , Vgs@10V, Ids@6 A = 38mΩ RDS(ON), Vgs@4.5V, Ids@5A = 52mΩ LN4812LT1G S-LN4812LT1G Features 3 Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance |
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LN4812LT1G S-LN4812LT1G AEC-Q101 236AB) LN4812LT3G S-LN4812LT3G 3000/Tape | |
lN4812
Abstract: LN4812LT1G marking n48 n-channel mosfet SOT-23
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LN4812LT1G 236AB) 3000/Tape LN4812LT3G 10000/Tape OT-23 lN4812 LN4812LT1G marking n48 n-channel mosfet SOT-23 |