LN2306LT1G Search Results

Contextual Info: LESHAN RADIO COMPANY, LTD. LN2306LT1G S-LN2306LT1G 30V N-Channel Enhancement-Mode MOSFET VDS= 30V RDS ON , Vgs@10V, Ids@5.8A = 38mΩ RDS(ON), Vgs@4.5V, Ids@5.0A = 43mΩ RDS(ON), Vgs@2.5V, Ids@4.0A = 62mΩ 3 1 2 Features Advanced trench process technology

Contextual Info: LESHAN RADIO COMPANY, LTD. 30V N-Channel Enhancement-Mode MOSFET LN2306LT1G VDS= 30V RDS ON , Vgs@10V, Ids@5.8A = 38mΩ RDS(ON), Vgs@4.5V, Ids@5.0A = 43mΩ RDS(ON), Vgs@2.5V, Ids@4.0A = 62mΩ 3 1 2 Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance

Contextual Info: LESHAN RADIO COMPANY, LTD. LN2306LT1G ▼ Capable of 2.5V gate drive ▼ Lower on-resistance 3 ▼ Surface mount package ▼ Pb-Free package is available 1 2 SOT– 23 TO–236AB D G S Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage VGS

N06 MOSFET

Abstract: LN2306LT1G n06g ln2306 43m marking N-Channel, 30V, 4.0A, Power MOSFET SOT-23
Contextual Info: LESHAN RADIO COMPANY, LTD. 30V N-Channel Enhancement-Mode MOSFET LN2306LT1G VDS= 30V RDS ON , Vgs@10V, Ids@5.8A = 38mΩ RDS(ON), Vgs@4.5V, Ids@5.0A = 43mΩ RDS(ON), Vgs@2.5V, Ids@4.0A = 62mΩ 3 1 2 Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance

2x062h

Abstract: gk105 1SS216 GK104 SMD Transistors w06 D20SB80 SMD marking 5As D25SB80 LRB706F-40T1G 2x062
Contextual Info: Leshan Radio Company, Ltd. 2008 PRODUCTS CATALOGUE 目 录 CONTENT 开关二极管 SWITCHING DIODES. 1 1. SOD–923 Surface Mount Switching Diodes. 1