LM5113TM Search Results

stackpole potentiometer

Contextual Info: Figure 4: Typical Waveforms for VIN = 48 V to 5 V/14 A 500 kHz Buck converter CH1: Switch node voltage (VSW) - CH2: PWM input voltage (VPWM) NOTE. The EPC9017 development board does not have any current or thermal protection on board. Figure 3: Proper Measurement of Switch Node – VSW

Contextual Info: LM5113 www.ti.com SNVS725F – JUNE 2011 – REVISED APRIL 2013 LM5113 5A, 100V Half-Bridge Gate Driver for Enhancement Mode GaN FETs Check for Samples: LM5113 FEATURES 1 • 2 • • • • • • • • • Independent High-Side and Low-Side TTL Logic Inputs

EPC8004

Contextual Info: APPLICATION NOTE: AN015 eGaN FETs for Multi-MHz Applications Introducing a Family of eGaN FETs for Multi-Megahertz Hard Switching Applications EFFICIENT POWER CONVERSION Michael de Rooij, PhD, Johan Strydom, PhD The ultra high speed switching capabilities of gallium nitride transistors have now been

Contextual Info: Figure 3: Proper Measurement of Switch Node – OUT Figure 4: Typical Waveforms for VIN = 48 V to 5 V/7 A 500kHz Buck converter CH1: Switch node voltage (VSW) - CH2: PWM input voltage (VPWM) NOTE. The EPC9002 development board does not have any current or thermal protection on board.

Contextual Info: Figure 4: Typical Waveforms for VIN = 24 V to 1.2 V/15 A 500kHz Buck converter CH1: VPWM Input voltage – CH3: (IOUT) Switch node current – CH4: (VOUT) Switch node voltage NOTE. The EPC9001 development board does not have any current or thermal protection on board.

Contextual Info: WHITE PAPER: WP014 eGaN FETs in Wireless Power Transfer Systems eGaN® FETs in Wireless Power Transfer Systems EFFICIENT POWER CONVERSION Alex Lidow, Ph.D., CEO and Michael de Rooij, Ph.D., Executive Director of Applications Engineering Introduction The popularity of wireless energy transfer has increased over the last few years and in particular for applications targeting portable device charging. In this article,

Contextual Info: EPC reserves the right at any time, without notice, to change said circuitry and specifications. Demonstration Board Notification The EPC9107 board is intended for product evaluation purposes only and is not intended for commercial use. As an evaluation tool, it is not

Contextual Info: EPC reserves the right at any time, without notice, to change said circuitry and specifications. Demonstration Board Notification The EPC9101 board is intended for product evaluation purposes only and is not intended for commercial use. As an evaluation tool, it is not

Contextual Info: LM5113 www.ti.com SNVS725F – JUNE 2011 – REVISED APRIL 2013 LM5113 5A, 100V Half-Bridge Gate Driver for Enhancement Mode GaN FETs Check for Samples: LM5113 FEATURES 1 • 2 • • • • • • • • • Independent High-Side and Low-Side TTL Logic Inputs

Contextual Info: D C B A VOUT 1 C3 C1 220pF C2 MODE TRK/SS VCC R2 15k 22pF 0.1uF, 25V R8 39.2k R7 Zero Opt 6 5 4 3 2 S- RUN C5 S+ EXT 2 MODE 100k R12 R11 560k 11 12 13 14 0.1uF, 25V C7 16 15 R9 2.2 IntVCC PGND BG SW TG Boost VIN U1 LTC3833 R10 10.0k C18 Optional VIN PGOOD

smd transistor A1 HB

Abstract: LM5113 WSON 10 DPR0010A Texas Instruments GaN
Contextual Info: LM5113 www.ti.com SNVS725E – JUNE 2011 – REVISED JANUARY 2012 LM5113 5A, 100V Half-Bridge Gate Driver for Enhancement Mode GaN FETs Check for Samples: LM5113 FEATURES 1 • 2 • • • • • • Independent high-side and low-side TTL logic inputs 1.2A/5A peak source/sink current

Contextual Info: LM5113 www.ti.com SNVS725F – JUNE 2011 – REVISED APRIL 2013 LM5113 5A, 100V Half-Bridge Gate Driver for Enhancement Mode GaN FETs Check for Samples: LM5113 FEATURES 1 • 2 • • • • • • • • • Independent High-Side and Low-Side TTL Logic Inputs

J5 controller board circuit diagram

Contextual Info: Figure 4: Typical Waveforms for VIN = 48 V to 5 V/35 A 300 kHz Buck converter CH1: PWM input voltage (VPWM) – CH4: Switch node voltage (VSW) NOTE. The EPC9013 development board does not have any current or thermal protection on board. Figure 3: Proper Measurement of Switch Node – VSW

Contextual Info: Figure 4: Typical Waveforms for VIN = 24 V to 1.2 V/25 A 1000kHz Buck converter CH2: Switch node voltage (VSW) – CH4: PWM input voltage (VPWM) NOTE. The EPC9016 development board does not have any current or thermal protection on board. Figure 3: Proper Measurement of Switch Node – VSW

smd transistor A1 HB

Abstract: omap hs smd driver fets
Contextual Info: LM5113 5A, 100V Half-Bridge Gate Driver for Enhancement Mode GaN FETs General Description Features The LM5113 is designed to drive both the high-side and the low-side enhancement mode Gallium Nitride GaN FETs in a synchronous buck or a half bridge configuration. The floating high-side driver is capable of driving a high-side enhancement mode GaN FET operating up to 100V. The high-side

KEYSTONE 5015

Contextual Info: D C B 1 TRACK SYNC EXT C2 C3 150pF 22pF R7 Opt R5 Zero VCC R2 18k 0.1uF, 25V TRK/SS R4 10.0k 47pF C12 MODE TRK/SS PGOOD Rev. 1.0 1 Demonstration Board – EPC9107 Schematic C1 R3 45.0k VOUT Remote Sensing 1k R14 Keystone 5015 1 TP9 VCC 1k R13 Keystone 5015

R814

Contextual Info: 2 3 C90 1uF, 25V C94 100nF, 50V 5V OUT C91 1uF, 25V 5V 5V Control Supply Regulator 5 6 2.5Vref 2.5Vref OUT A C93 22uF, 25V Voltage Reference C50 100nF, 50V C71 100nF 50V J61 ExtOsc 3 ACVcoilFB 2 VcoilFB 1 .1” Male Vert. 1 R15 2 250E Control Method 1-2 = Internal Feedback