LM 356 APPLICATION Search Results
LM 356 APPLICATION Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| PEF24628EV1X |
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PEF24628 - SOCRATES Four-channel SHDSL EFM system-on-chip |
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| OMAP5910JGVL2 |
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Applications processor |
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| OMAP5910JZVL2 |
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Applications processor |
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| 143-4162-11H |
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Paladin RPO, DC, 4-Pair, 6 Column, APP | |||
| 143-6282-11H |
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Paladin RPO, DC, 6-Pair, 8 Column, APP |
LM 356 APPLICATION Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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tt 2246
Abstract: TT 2206 TT 2206 pin lme0505
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250mW 1000VDC 25cm2 LME05XX LME12XX LME0305 LME0309 LME0312 LME0315 tt 2246 TT 2206 TT 2206 pin lme0505 | |
rgbw
Abstract: LZC-00MD40
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LZC-00MD40 LL-3T08 rgbw LZC-00MD40 | |
High Flux RGB LED
Abstract: power rgb LED 3w LLxx-3T08-H 0/LZC-00MC40
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LZC-00MC40 LL-3T08 High Flux RGB LED power rgb LED 3w LLxx-3T08-H 0/LZC-00MC40 | |
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Contextual Info: LedEngin, Inc. High Luminous Efficacy RGBA LED Emitter LZC-00MA40 Key Features • • Ultra-bright, Ultra-compact 40W RGBA LED Individually addressable Red, Green, Blue and Amber die Small high density foot print – 9.0mm x 9.0mm x 5.4mm |
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LZC-00MA40 LL-3T08 | |
2SC394
Abstract: TRANSISTOR 2SC394 2SC394-0 2SC394-R 100MHZ 251C HSE2 Produced by Perfect Crystal Device Technology 2SC394 transistor
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2sc394 100MHz) 200MHz j2f58MAX. 95MAJ( 100MHz 2SC394 TRANSISTOR 2SC394 2SC394-0 2SC394-R 251C HSE2 Produced by Perfect Crystal Device Technology 2SC394 transistor | |
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Contextual Info: LedEngin, Inc. High Luminous Efficacy Red LED Emitter LZ4-00R110 Key Features High Luminous Efficacy 10W Red LED Ultra-small foot print – 7.0mm x 7.0mm x 4.3mm Surface mount ceramic package with integrated glass lens |
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LZ4-00R110 JESD22-A102-C) | |
LM 385 NContextual Info: LedEngin, Inc. High Luminous Efficacy Amber LED Emitter LZ4-00A110 Key Features High Luminous Efficacy 10W Amber LED Ultra-small foot print – 7.0mm x 7.0mm x 4.3mm Surface mount ceramic package with integrated glass lens |
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LZ4-00A110 JESD22-A102-C) LM 385 N | |
10w warm white led
Abstract: LED 10w RGBw LZ4-00W200 660nm "high power" led JEDEC Jc-11 free
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LZ4-00W200 JESD22-A102-C) 10w warm white led LED 10w RGBw LZ4-00W200 660nm "high power" led JEDEC Jc-11 free | |
BF569Contextual Info: Tem ic BF569/BF569R S e m i c o n d u c t o r s Silicon PNP Planar RF Transistor Applications For selfoscillating RF m ixer stages B F569 M arking: LH Plastic case SO T 23 1= C ollector; 2= Base; 3= E m itter BF569R M arking: LM Plastic case (SO T 23) 1= C ollector; 2= Base; |
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BF569/BF569R BF569R 27-Feb-97 BF569 | |
HLMAContextual Info: W tip l WÜtLÆ Subminiature High Performance AlInGaP LED Lamps Technical Data Features • Subminiature Flat Top Package Ideal for Backlighting and Light Piping Applications • Subminiature Dome Package Nondiffused Dome for High Brightness • Wide Range of Drive |
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HLMA-PH00 HLMT-PH00 HLMA-PL00 HLMT-PL00 HLMA-QH00 HLMT-QH00 HLMA-QL00 HLMT-QL00 HLMA-/HLMT-QL00/-QH00. HLMA-/HLMT-PL00/-PH00. HLMA | |
RCR2350
Abstract: RCR2350B XK 220 mpp film capacitor
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8100Z RCR2350 RCR2350B XK 220 mpp film capacitor | |
IC LM 351Contextual Info: RN2314,2315,2316 RN2317,2318 RN2314 SW ITCHIN G , INVERTER CIRCUIT, INTERFACE CIRCUIT A N D DRIVER CIRCUIT APPLICATIONS. • W ith Built-in Bias Resistors • Simplify Circuit Design • Reduce a Q uantity of Parts and M anufacturing Process • Complementary to RN1314~RN1318 |
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RN2314 RN2317 RN2314) RN1314 RN1318 RN2315 RN2316 RN2318 IC LM 351 | |
led XP-G
Abstract: Cree XLamp XP-G LED 90-CRI
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CLD-DS20 80-CRI, 85-CRI 90-CRI led XP-G Cree XLamp XP-G LED | |
Cree XLamp XP-G LED
Abstract: xpgwht-l1-0000-00h51 cree xp-g
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CLD-DS20 80-CRI, 85-CRI 90-CRI Cree XLamp XP-G LED xpgwht-l1-0000-00h51 cree xp-g | |
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2SK1865Contextual Info: TOSHIBA 2SK1865 Field Effect Transistor Silicon N Channel MOS Type rc-MOS 111.5 Industrial Applications Unit in mm High Speed, High Current Switching Applications Features • Low Drain-Source ON Resistance " Rds(ON) = 0 .5 5 ii (Typ.) • High Forward Transfer Admittance |
OCR Scan |
2SK1865 2SK1865 | |
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Contextual Info: Temic S254PN Se m i c o n d u c t o r s Silicon NPN Phototransistor Description S254PN is a high speed and very high sensitive silicon NPN epitaxial planar phototransistor in a standard T O -18 hermetically sealed metal case. Its glas£ lens featuring a viewing angle of ± 10° makes it |
OCR Scan |
S254PN S254PN 15-Jul-96 | |
057680U
Abstract: 057271U200JP2
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057--Standard, 157--High MIL-C39018/03 250Vdc 20kHz 120Hz 057680U 057271U200JP2 | |
2SC4452
Abstract: QVC5 Q60H
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OCR Scan |
G007101 2SC4452 -T-35-07 2SC4452-applied QVC5 Q60H | |
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Contextual Info: TO SHIBA 2SA1356 2 S A 1 356 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS. • Low Saturation Voltage : VCE(sat) = - 0.32V (Typ.) (IC = - 500mA, IB = - 50mA) High Collector Power Dissipation : P q = 1.2W (Ta = 25°C) |
OCR Scan |
2SA1356 500mA, 2SC3419 | |
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Contextual Info: LMU18 1 6 x 1 6-bit Parallel Multiplier Features Description □ 35 ns worst-case multiply time The LMU18 is a 16-bit parallel multi plier featuring high speed and low power consumption. The LMU18 is an 84-pin device which provides simultaneous access to all outputs. |
OCR Scan |
LMU18 LMU18 16-bit 84-pin 32-bit MIL-STD883, | |
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Contextual Info: T -1 3/4 In G a A lP U ltra B rig h t LED TLOH 156P Product Features - • InGaAlP Technology • J-V/* 5 mm Package • High Intensity Orange Light (Xp = 612 nm) Emission • Water Clear Lens M A XIM UM RATINGS (Ta = 2 5 X ) C H A R AC TER ISTIC Forward Current |
OCR Scan |
00006CH | |
LZ4-00WW10
Abstract: LZ4-00CW10 high power led 10w
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LZ4-00WW10 JESD22-A102-C) LZ4-00WW10 LZ4-00CW10 high power led 10w | |
E349212
Abstract: XPGWHT-H1-0000-00CE7
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CLD-DS20 80-CRI, 85-CRI 90-CRI E349212 XPGWHT-H1-0000-00CE7 | |
SMBJ150A LITE-ON
Abstract: SMBJ11CA SMBJ8.5CA SMBJ15A SMBJ200CA SMBJ350A SMBJ liteon LITEON MARKING BG SMBJ130A SMBJ170A
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