LM 234 DIODE Search Results

BU 103t transistor

Abstract: IC LM234 134H-6 diode cross reference 1N457 lm3341 lm 234 diode
Contextual Info: Semiconductor May 1998 LM134/LM234/LM334 3-Terminal Adjustable Current Sources General Description LM 234-3 and LM 134-6/LM 234-6 are specified as true te m ­ perature sensors with guaranteed initial accuracy of ±3°C and ±6°C , respectively. These devices are ideal in rem ote

LM134-LM234

Abstract: 3773 so-8 LM234 14 pin 1N457 tempco 2N4250 LM134 LM234 LM334 LM334M M08A
Contextual Info: LM134/LM234/LM334 National Semiconductor LM 134/LM 234/LM 334 3-Terminal Adjustable Current Sources General Description LM 234-3 and L M 13 4 -6 /L M 23 4 -6 are specified as tru e te m ­ perature sensors w ith guaranteed initial accura cy o f ± 3°C and ± 6 * 0 , respectively. Th e se devices are ideal in rem ote

IC LM234

Abstract: ET227
Contextual Info: a t i o n a l S e m i c o n d u c t o r LM134/LM234/LM334 3-Terminal Adjustable Current Sources General Description LM 234-3 and LM 134-6/LM 234-6 are specified as true te m ­ perature sensors with guaranteed initial accuracy of ±3°C and ±6°C , respectively. These devices are ideal in rem ote

Contextual Info: r Z 7 S G S -T H O M S O N LM134 LM 234-LM 334 THREE TERMINAL ADJUSTABLE CURRENT SOURCES • ■ ■ ■ OPERATES from 1 V to 40 V 0.02 % V CURRENT REGULATION PROGRAMMABLE from 1 |a.A to 10 mA ± 3 % INITIAL ACCURATY D E S C R IP T IO N The LM134/LM234/LM334 are 3-terminal adjusta­

LM334 equivalent transistor

Abstract: LM334 lmi34 LM134Z LM234 C101 to-92 LM134 Thomson transistor
Contextual Info: LM134 LM234 LM334 THOMSON SEMICONDUCTORS THREE TE R M IN A L ADJUSTABLE CURRENT SOURCES The L M 134/ LM 234/ LM334 are 3-term inal adjustable current sources charac­ terized by : — an operating current range o f 10000 : 1 — an excellent current regulation

lm 234 diode

Abstract: LM175 F238 IHW40N60R
Contextual Info: IHW40N60R IH-series Reverse conducting IGBT C Features: • Powerful monolithic body diode with low forward voltage designed for soft commutation only • TrenchStop technology applications offers: - very tight parameter distribution - high ruggedness, temperature stable behavior

IHW40N60R

Abstract: lm 234 diode N238 F238 6284n lm6040
Contextual Info: IHW40N60R IH-series Reverse conducting IGBT C Features: • Powerful monolithic body diode with low forward voltage designed for soft commutation only • TrenchStop technology applications offers: - very tight parameter distribution - high ruggedness, temperature stable behavior

Contextual Info: Red Laser Diode DL-3148-033/-034/-234 Features • • • • Tolerance : ± 0 .2 Unit : mm Package Short wavelength : 635 nm Typ. Low threshold cu rren t: Ith = 40 mA (Typ.) High operating temperature : 5mW at 50°C Small package : 0 5.6mm Applications

16*32 LED Matrix

Abstract: LB234 2 x 16 led dot matrix led dot matrix 8 by 8 led matrix 16X32 Dot Matrix Displays 5 x 8 led dot matrix 8 x 8 led dot matrix
Contextual Info: Lieht Emitting Diodes Chip LEDs- 216 LED Numeric Displays- 234 Mgh luminance chip LEDe with reflector SM L 216 Single Digit LED Numeric Displays (LA) 234 M M moWed Package chip LED* (SM L)

LM234P

Abstract: lm 234 diode LM234 14 pin
Contextual Info: r z 7 Ä 7# S C S -T H O M S O N L M 134 L M 2 3 4 -L M 334 THREE TERMINAL ADJUSTABLE CURRENT SOURCES • i ■ ■ OPERATES from 1 V to 40 V 0.02 % V CURRENT REGULATION PROGRAMMABLE from 1 |jA to 10 mA ± 3 % INITIAL ACCURATY DESCRIPTIO N The LM134/LM234/LM334 are 3-terminal adjusta­

Contextual Info: I_iShit Emitting Diodes C h ip L E D s - 216 L E D N um eric D isp la y s - 234 Mgh lum inance chip LEDs w ith reflecto r SM L 216 Single Digit LED Numeric Displays (LA)

st smd diode marking code VU

Abstract: lm 709
Contextual Info: DISCRETE SEMICONDUCTORS PRLL5817; PRLL5818; PRLL5819 Schottky barrier diodes Product specification Supersedes data of 1996 May 03 Philips Sem iconductors 1999 Apr 22 PHILIPS Philips Semiconductors Product specification Schottky barrier diodes PRLL5817; PRLL5818; PRLL5819

Contextual Info: 1SV262 TOSHIBA 1 SV2 6 2 TOSHIBA VARIABLE CAPACITANCE DIODE CATV TUNING. SILICON EPITAXIAL PLANAR TYPE High Capacitance Ratio : C2V / C25V = 12.5 Typ. Low Series Resistance : rs = 0.6ft (Typ.) Excellent C-V Characteristics, and Small Tracking Error. Small Package

LM016L

Abstract: LM016H LM315XBN hitachi lcd lm 234 LM213XB LCD LM016L LM213B LM313XBN LM238XB HITACHI LCD lm016L
Contextual Info: ^ H IT A C H I' UQUIDCRYSIAL DISPLAY MODULES AND DEVCES The Clear Advantage In LCD Technology 4 ♦ Unsurpassed Technology, Resources, and Commitment Make Hitachi Your Best L C D Partner Selecting the right display for your product is one of the most important

Common Cathode RGB LEDS 5mm

Abstract: multicolor led 2-pin 5mm OPA731 b45 smd diode cool white led super bright 1 watt OPA729G LED-120A-1400C-24F OPA741 B45 diode smd OVLENS234
Contextual Info: Product Selection Guide Visible LEDs and Assemblies A Part Of Everyday Technology Category VLED Description Page # 3 Components Through-hole High Flux Surface Mount White 6 5-8 5, 6 & 8 RGB 7 Lednium 8 Assemblies 9 & 10 Lens 15° & 23° Package Drawings Page 2

FP35R12KT4

Contextual Info: Technische Information / technical information FP35R12KT4 IGBT-Module IGBT-modules EconoPIM 2 Modul mit Trench/Feldstopp IGBT4 und EmCon4 Diode EconoPIM™2 module with trench/fieldstop IGBT4 and EmCon4 diode IGBT-Wechselrichter / IGBT-inverter Vorläufige Daten / preliminary data

FP35R12KT4

Abstract: 32L0 IR 50H
Contextual Info: Technische Information / technical information FP35R12KT4_B11 IGBT-Module IGBT-modules EconoPIM 2 Modul PressFIT mit Trench/Feldstopp IGBT4 und EmCon4 Diode EconoPIM™2 module PressFIT with trench/fieldstop IGBT4 and EmCon4 diode IGBT-Wechselrichter / IGBT-inverter

Contextual Info: GaA fA s RED LIGHT EMITTER TLRA280 TLRA280 Unit in mm LED FOR PLASTIC FIBER • Luminous spectra are suited to plastic fiber. : /lp = 660nm (TYP.) • High coupling efficiency with fiber : Pf= —4.0dBm (TYP.) • High speed application is possible. : fc = 3MHz (TYP.)

DA218S

Abstract: A223D DA226U DAN217
Contextual Info: 4 $ * DA203/DA204K/DA204U/DA210S/DA216 DA218S/DAN217/DA221 /OA223/DA223K/DA226U K /D io d es - D A 203/D A 204K /D A 204U /D A 21 OS D A 216/D A 218S /D A N 217/D A 221 D A 223/D A 223K /D A 226U - > y K r u - c Silicon Epitaxial Planar Dual Diode Arrays * W fi'tfiiE I/'D im e n s io n s U n it: mm

diode lt 247

Abstract: NTE9808
Contextual Info: N T E E LECTRONI CS INC 55E b M3 1 2 S1 Q0 Q5 0 e 5 » 131 • N T E IN TEG l DIODE TRANSISTOR LOGIC) Dual J-K Flip-Flop 14-Lead DIP, See Dlag. 247 (Power Drain = 28/34mA Max) Quad, 2-Input Buffer 14-Lead DIP, See Dlag. 297 Hex Inverter (Output Loading Factor = 25/27)

Contextual Info: I T T CORP/ I T T CMPNTS 41E D • t b 8 S h 8 4 QOOlMCIi S ■ ITO ZENER DIODES "T-u-O 1N4729 Series 1 W att Glass Zener Diodes in DO-41 Package TA = 25 °C Using the type designations ZM 4729, Z M 4730 and so on, these Zener diodes are available in the MELF package with the same electrical charac­

BAP64-02

Abstract: v 817 y
Contextual Info: DISCRETE SEMICONDUCTORS Æ m SIHIEET BAP64-02 Silicon PIN-diode Objective specification Philips Sem iconductors 1998 Dec 04 PHILIPS Philips Semiconductors Objective specification Silicon PIN-diode BAP64-02 PINNING FEATURES • High voltage, curre n t controlled.

Contextual Info: DISCRETE SEMICONDUCTORS PÂTÂ SlnlEET 1PS79SB40 Schottky barrier diode Product specification Supersedes data of 1999 Mar 08 Philips Sem iconductors 1999 Apr 26 PHILIPS Philips Semiconductors Product specification Schottky barrier diode 1PS79SB40 FEATURES

Contextual Info: DISCRETE SEMICONDUCTORS Philips Sem iconductors PHILIPS Philips Semiconductors Product specification Schottky barrier diode 1PS79SB40 FEATURES DESCRIPTION • Low forw ard voltage Planar S chottky barrier diode encapsulated in an S C -79 S O D 523 ultra sm all