LL5711 Search Results

SOD-80 Marking Code AA

Abstract: LL6263 LL6263-GS18 1N5711 1N6263 LL5711 LL5711-GS08 sod80 marking aa
Contextual Info: LL5711 and LL6263 VISHAY Vishay Semiconductors Schottky Diodes Features • For general purpose applications • Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. • The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching

1N5711

Abstract: 1N6263 LL5711 LL6263
Contextual Info: LL5711 and LL6263 SCHOTTKY BARRIER DIODES MiniMELF SOD-80C VRRM : 70V , 60V Cathode Mark φ 0.063 (1.64) FEATURES : • For general purpose applications • Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage

SOD80

Abstract: glass diode SINGLE GREEN band
Contextual Info: LL5711 and LL6263 Small-Signal Diode Schottky Diodes Features ‹ For general purpose applications ‹ Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. ‹ The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling

LL5711

Contextual Info: LL5711 SCHOTTKY BARRIER SWITCHING DIODE Features • · · · Ultra-Fast Switching Speed High Reverse Breakdown Voltage Low Forward Voltage Drop Guard Ring Junction Protection C B A Mechanical Data · · · · · Case: MiniMELF, Glass Terminals: Solderable per MIL-STD-202,

minimelf diodes color

Abstract: 1N5711 1N6263 LL5711 LL6263 MINI-MELF DIODE green CATHODE
Contextual Info: LL5711 and LL6263 Schottky Diodes Features MiniMELF SOD-80C Cathode Band .063 (1.6) Dia. .051 (1.3) .019 (0.48) .011 (0.28) .146 (3.7) .130 (3.3) • For general purpose applications • Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring.

Contextual Info: LL5711 / LL6263 Schottky Barrier Diode Features 1. For general purpose applications. 2. Metal-on-silicon schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering,

melf Schottky

Abstract: LL5711 DO-213AA LL101A LL101B LL101C LL6263 Scans-00155602
Contextual Info: DO-213AA MELF SMD Applications a LL5711, LL6263& LL101series Schottky Diodes Guard ring protected schottky barrier, Low forward drop. Fast switching, small ^gpf I devices. ferace SMA and SOD:323 plastic pickages on boärds w iW yt redesign. LL-34/35 MINI-MELF

minimelf diodes color

Abstract: MINI-MELF DIODE green CATHODE GREEN Color band DIODES DO 35
Contextual Info: LL5711 and LL6263 Schottky Diodes Features MiniMELF SOD-80C Cathode Band .063 (1.6) Dia. .051 (1.3) .019 (0.48) .011 (0.28) .146 (3.7) .130 (3.3) • For general purpose applications • Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring.

minimelf diodes color

Abstract: 1N5711 MINI-MELF DIODE green CATHODE SOD-80C minimelf diodes color green
Contextual Info: LL5711 and LL6263 New MiniMELF SOD-80C Cathode Band .063 (1.6) Dia. .051 (1.3) .019 (0.48) .011 (0.28) .146 (3.7) .130 (3.3) Schottky Diodes ct u d Pro Features • For general purpose applications • Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring.

Contextual Info: LL5711 SCHOTTKY BARRIER SWITCHING DIODE Features • • Ultra-Fast Switching Speed High Reverse Breakdown Voltage • • Low Forward Voltage Drop Guard Ring Junction Protection Mechanical Data_ • • • • • MiniMELF Case: MiniMELF, Glass

BKC Semiconductors

Contextual Info: DO-213AAMELF SMD Applications 1 LL5711, LL6263& LL101 series Schottky Diodes Guard ring protected schottky barrier. Low forward drop. Fast switching, high performance replacement for small signal devices. Excellent protection for MOS devices. Used in steering, biasing andcoupling

Contextual Info: LL5711 SCHOTTKY BARRIER SWITCHING DIODE POWER SEMICONDUCTOR Features • • • • Ultra-Fast Switching Speed High Reverse Breakdown Voltage Low Forward Voltage Drop Guard Ring Junction Protection C B A Mechanical Data • • Case: MiniMELF, Glass Terminals: Solderable per MIL-STD-202,

Contextual Info: LL5711 / LL6263 Schottky Barrier Diode Features 1. For general purpose applications. 2. Metal-on-silicon schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering,

10A Schottky

Abstract: 50V 10A ultra fast diode LL5711
Contextual Info: LL5711 SCHOTTKY BARRIER SWITCHING DIODE Features Ultra-Fast Switching Speed High Reverse Breakdown Voltage Low Forward Voltage Drop Guard Ring Junction Protection • · · · C B A Mechanical Data Case: MiniMELF, Glass Terminals: Solderable per MIL-STD-202,

SMD Transistors w04 sot-23

Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
Contextual Info: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.

1n5711 diode

Contextual Info: 1N5711 / 1N6263 Schottky Barrier Diode Features 1. For general purpose applications. 2. Metal-on-silicon schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of

Contextual Info: 1N5711 AND 1N6263 Schottky Diodes FEATURES DO-35 ♦ For general purpose applications. ♦ Metal-on-silicon Schottky barrier X device which is protected by a PN X. junction guard ring. The low forward M voltage drop and fast switching make it , ideal for protection of MOS devices, steering,

Contextual Info: 1N5711 / 1N6263 Schottky Barrier Diode Features 1. For general purpose applications. 2. Metal-on-silicon schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of

1N5711 SMD

Abstract: 1N5711 BKC Semiconductors DSAIH0002561
Contextual Info: Schottky Diodes SOT-23 Plastic SMD * for duals add U 04,05 & 06 suffix y Applications Excellent MOS protection. Efficient portable system battery isolator. Used in small fast motor applications such as CD ROMs and hard disk drives. SOT-23 PACKAGE OUTLINE Features

BAS83

Abstract: DL4007 ALL4001G DL4001 DL4002 DL4003 DL4004 DL4005 DL4006 LL4001G
Contextual Info: Leadless Surface Mount Rectifiers Max. Average Rectified Current CrossReference Part No. DL4001 DL4002 DL4003 DL4004 DL4005 DL4006 DL4007 LL4001G LL4002G LL4003G LL4004G LL4005G LL4006G LL4007G LL4001G LL4002G LL4003G LL4004G LL4005G LL4006G LL4007G SM4001

1N5711

Abstract: Schottky diodes 1n5711 diode 1N6263 LL5711 LL6263
Contextual Info: 1N5711 and 1N6263 Small-Signal Diode Schottky Diodes Features For general purpose applications Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering,

MINI-MELF schottky BLUE CATHODE

Abstract: bat41 bat43 bat85 SOT23 bat41 BAT46 MINI-MELF schottky BLUE BAT85 sot BAS85 BAT85 equivalent TEXT bat41 BAT42
Contextual Info: SMALL SIGNAL SCHOTTKY DIODES Package Reverse Voltage VBR Volt Leaded DO-35 Surface Mount Device MiniMELF SOD-323 SOD-123 Forward Voltage @ Forward current VF max @ IF SOT-23 single dual mV mA 10 SD104CWS 400 1 15 SD104BWS 425 1 SD104AWS 450 1 370 20 400 10

1N5711

Abstract: 1N6263 LL5711 LL6263
Contextual Info: NEW PRODUCT NEW PRODUCT NEW PRODUCT 1N5711 AND 1N6263 SCHOTTKY DIODES min. 1.083 27.5 FEATURES ¨ For general purpose applications. ¨ Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast

1N6263

Abstract: 1N5711 1N5711-TAP 1N5711-TR 1N6263-TAP 1N6263-TR LL5711 LL6263 18529
Contextual Info: 1N5711, 1N6263 VISHAY Vishay Semiconductors Schottky Diodes Features • For general purpose applications • Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal