LJ LASER Search Results

Contextual Info: HSM124S-Silicon Epitaxial Planar Diode for Switching Features Pin Arrangement • Low reverse current. • MPAK package is suitable for high density surface mounting and high speed assembly. T J2 LJÏ Top View Ordering Information Type No. Laser Mark

MARK SD DIODE

Contextual Info: HSC276-Silicon Schottky Barrier Diode for Tuner Mixer, Converter Features • • Outline High forward current, Low capacitance. Ultra small Flat Package UFP is suitable for surface mount design. Cathode mark Mark 1>=f LJ I Ordering Information

thermistor 054

Contextual Info: 4SE LASERTRON INC J> m S3A33S5 0000205 5 Ö L S R J - Lj -cq QLID35S<D2 5 & 8 nW Cooled LED Telecom access and junction applications 5 fiW and 8 fiW rated output pow ers available 1300 nm wavelength Cooled 14-pin DIL package, single-mode fiber Description

635 nm

Abstract: 650 nm 780 nm laser 850 nm DSA0047704 laser modul roithner lj lj laser LaserTech
Contextual Info: LASERDIODEMODULES TYPE LJ TECHNICHAL DATA • • • • • • • • • • • • • • Diameter 12 mm, length 29.2 mm +/- 0.5 mm Supply voltage: 3.0 . 6.0 VDC max. On delay time: typ. 160 µs Off delay time: typ. 70 µs Modulation via supply voltage: DC . 10 kHz (max.)

CLC925BI

Abstract: CLC925 DS925 404KHZ LC925 CLC925B8C
Contextual Info: Cipì Com Iinear c!LJ Corporation 12-Bit, 10MSPS A/D Converter APPLICATIONS: FEATURES typical : • • • • • • • • • • radar processing FLIR processing/electronic imaging instrumentation medical imaging transient-signal recorders 66.8dB spurious free signal range; f,N= 5MHz

United Detector Technology Photodiodes

Abstract: United Detector Technology United Detector Technology, silicon photodiode United Detector silicon photodiode PIN-3DP PIN-10D United Detector Technology photodiode 601 Opto isolator PIN-25D United Detector Technology 10dp
Contextual Info: PIN SERIES PLANAR-DIFFUSED SILICON PHOTODIODES LJ UNITED DETECTOR TECHNOLOGY 9310987 UNITED DEÍECTOR UNITED V 64C 0 0 7 8 7 "bM DETECTOR T-41-53 BICHA 7 □ 00D 7fl? h | ~ PIN SERIES PLANAR-DIFFUSED SILICON F •f ! M • D SERIES PIN PHOTODIODE SPECIFICATIONS

CM100DY-12E

Abstract: CM100DY12E
Contextual Info: b4E D • 72T4b21 0GDb72fl ITl H P R X CM100DY-12E Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 D lJ S l IG B T M O D Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43)41.14.14 - _ . . , .

4914B

Abstract: 87-nft 16 LJ HIL-C-D344G
Contextual Info: h- * -1 t t _ -►lui"« F * 1»- I , 1 P ÄTE HF k 4,914 ,B M ELECTRtC&L I OCR .27D DHHS MAX. SRF 42D Hhz HIN. 15 .lit H in. r .141 FD F .171 REF. DH L y r. .15 4 REF. D HL r G V ER .111 .11,1 LASER 25.[ MHZ MARK: SHD 16 LJ YYVWL ENCAPSULAT[QN EPDXY HDLDED

Contextual Info: KODENSHI CORP. 25E D S2M2bDa [100012=1 1 U T-'H}'S'3 -i f - LASER DETECTORS DIMENSIONS Unit: mm HPI-236K 2365(is U - + f - f c '- A # f f i ( 7 ) '> lJ = l> P IN J g 7 * (DD JiDD t To KCL h HPI-2361, 2365 are silicon PIN photodiodes for detecting laser beam. HPI-2361, 2365 have active areas for tracking

07255

Contextual Info: TOSHIBA LASER/FBR OPTIC ^ 0 PRODUCT INFORMATION w j/ mm / / ^0^7255 I u I I L j L 0015030 3 • TOSb.T-4Ï-07 / / TOSHIBA LASER DIODE TOLD 70 / TENTATIVE ~ T o lJ > 4 - D th * . ;s S ì c u l o / i . ^ c £ ^ f L & 'fO h tn ) TOSHIBA LASER DIODE, TOLD70, is a InGaAsP/lnP type laser diode with a fiber

Contextual Info: f lJ H A R R AD7541 IS S E M I C O N D U C T O R 12-Bit Multiplying D/A Converter December 1993 Features Description • 12-Bit Linearity 0.01% The AD7541 is a monolithic, low cost, high performance, 12bit accurate, multiplying digital-to-analog converter DAC .

R4000MC

Abstract: R2000 mips Siemens R2000 R4000SC R2010 mips processor R3010 mips processor MIPS R3000A mips r4000 block diagram R2000 mips processor
Contextual Info: 5 3 0 lJâ04 ODIO'îTB D5fl « L L C Introduction to the LR4000 MIPS Microprocessor Publication ID: J 1 4 0 1 5 Publication D ate: O cto b er 1, 1 9 9 1 Company: L S I LOGIC CORP This title page is provided as a service by In fo rm a tio n Handling Services and displays

Contextual Info: C O M PO N E N T S B LJ R R - B R 0 111N HE CORP B U R R -B R O W N D • 1 7 3 1 3 fci5 0 0 1 5 0 7 4 AD534/883B SERIES ] AD534TD/883B AD534SD/883B AD534TH/883B AD534SH/883B REVISION NONE May, 1988 Precision ANALOG MULTIPLIER FEATURES APPLICATIONS • ±0.5% MAX 4-QUADRANT ERROR

P1204

Abstract: p1204 toshiba P1204 C3 TLP1204 sensor P1204 tlp120-4 TLP1204C3
Contextual Info: TOSHIBA TLP1204 C1 ,TLP1204(C3) TOSHIBA PHOTOINTERRUPTER INFRARED LED + PHOTO IC TLP1204(d), TLP1204(C3) Unit in mm COPIER, LASER BEAM PRINTER FACSIMILE, PRINTER AUTOMATIC VENDING MACHINE, TERMINAL EQUIPMENT IN BANKING FACILITIES PLAYING EQUIPMENT, FA EQUIPMENT

laser modul

Abstract: 650nm 808nm mcb DATASHEET DSA0047704 laserdiodenmodul
Contextual Info: LJM LASERDIODENMODUL TYPE modulierbar DC - 360 kHz TECHNISCHE DATEN: • • • • • • • • • • • • • Durchmesser 12mm, Länge: 29.2mm +/- 0.5mm Betriebsspannung Ub: 3.0 . 5.0 VDC Laserdiode leistungsgeregelt Modulierbar DC . 360kHz, Delaytime ON und OFF: typ. 1.8 µs

p1201a

Abstract: TOSHIBA p1201a H3P-SHF-AA molex* polycarbonate laser
Contextual Info: T O SH IB A TLP1201 A,TLP1201 A C1 ,TLP1201 A(C2) TOSHIBA PHOTOINTERRUPTER INFRARED LED + PHOTO IC TLP1 2 0 1 A , TLP1201 A (C 1), TLP1 2 0 1 A (C 2 ) COPYING MACHINE, LASER BEAM PRINTER FACSIMILE, PRINTER AUTOMATIC VENDING MACHINE, TERM INAL EQUIPM ENT IN BANKING FACILITIES

850 nm

Abstract: LDM850
Contextual Info: LDM850/3LJ v 1.0 11.09.2014 Description LDM850/3LJ is a 850 nm laser module containing a 850 nm MOCVD grown laser diode with quantum well structures. It is an ideal light source for measurement and medical applications. Maximum Ratings Parameter Optical Power

Contextual Info: um Cermet Chip Resistors Series BC AC FEATURES _ • Standard Sizes BC - 1206 AC - 0805 • 1%, 2%, 5% tolerance • ±100PPM/°C, ± 200PPM /°C, ± 300PPM /°C • Zero ohm jumper • Cermet Resistance Element • High Purity Alumina Substrate

Contextual Info: B ’D A T E L s h m -43 High-Speed, ±0.01% Hybrid Sample-Hold Amplifiers IN N O V A T IO N a n d E X C E L L E N C E FEATURES • • • • • • • 35ns maximum acquisition time to ±0.01% 30ns maximum hold-mode settling to ±0.01% 1ps aperture uncertainty

Contextual Info: • 7 6 E 6 cì cì ‘ì 000B3S0 157 M R H H f t Is— ? / Laser Diodes RLD-78M21/RLD-78P21/RLD-78N21 RLD-78M21 /RLD-78P21 / RLD-78N21 AIGaAs AIGaAs Double-hetero Visible Laser Diodes "^SB/Dimensions Unit : mm RLD-78M21 /RLD-78P21 /RLD-78N21 (3 ) it, X

Contextual Info: bSE D • bM27525 GG37S23 4Ö5 HNECE N E C ELECTRONICS INC LASER DIODE / NDL5071 1 550 nm OPTICAL FIBER COMMUNICATIONS InGaAsP DOUBLE HETEROSTRUCTURE PULSED LASER DIODE DESCRIPTION ND L5071 is a 1 550 nm pulsed laser diode especially designed fo r optica l m easurement equipm ent O TD R . The DC-PBH

Contextual Info: TYPE 681P HIGH DISCHARGE RATE ENERGY-STORAGE METALIZED-FILM CAPACITORS DISCHARGE RATE: 10 discharges per sec. maximum INDUCTANCE: 0.03 to 0.05 H typical at resonance terminal style 1 only INSULATION RESISTANCE: Measured at 500 VDC after a 2 minute charge.

9446 diode

Abstract: f 9582 V127 ir 643
Contextual Info: LASER COMPONENTS GmbH Address Werner-von-Siemens-Str. 15 P.O. Box 1129 D-82140 Olching D-82133 Olching Phone+49-8142-28640 • Fax+49-8142-286411 E-Mail: info@lasercomponents.com • Web: www.lasercomponents.com Datasheet for Order, LC Order Part Customer

PK-45970-001

Contextual Info: 10 4_ |_ 3_ |_ 2_ | .004 NOTES: 1. ALL DIMENSIONS FOR REFERENCE ONLY UNLESS OTHERWISE SPECIFIED. 2. ALL CONTACTS NOT SHOWN FOR CLARITY. 3. MATERIAL: HOUSING - HIGH TEMPURATURE THERMOPLASTIC, COLOR: BLACK TERMINAL - COPPER ALLOY