LINEAR ARRAY UNIT Search Results

E6572

Abstract: E678-32B H7260-01 UV CATHODE TUBE H7260 H7260K R5900U-00-L16 R5900U-01-L16 R5900U-03-L16 R5900U-L16
Contextual Info: LINEAR ARRAY MULTIANODE PMT AND ASSEMBLY R5900U-L16 SERIES, H7260 SERIES Multianode 16 Channel Linear Array R5900U-L16: PMT Multianode 32 Channel Linear Array (H7260: PMT ASSEMBLY) FEATURES ● High Cathode Sensitivity Luminous 250 µA/lm Typ. (-01 Type)

MLX75306

Abstract: Timing Generator for Frame Readout 8 bit LFSR for test pattern generation Melexis photodiode MLX75306KXZ-BAA-000-RE
Contextual Info: MLX75306 rd 3 Generation Linear Optical Array General Description rd The MLX75306 is the Melexis 3 generation automotive linear optical sensor array, including a 142 x 1 array of photodiodes, associated charge amplifier circuitry and a pixel data-hold function that provides

Contextual Info: ALA501 High-Voltage, Sem icustom Linear/D igital Array Description The ALA501 High-Voltage, Semicustom Linear/Digital Array is a versatile, smart-power IC consisting of user-configurable, high-voltage, linear devices and CMOS logic. Users can design their own proprietary

Contextual Info: LINEAR ARRAY MULTIANODE PMT ASSEMBLIES AND MODULES Photomultiplier Tube with Active Divider Circuit Linear Array Multianode PMT Assembly, 8-channel H9530 series / 16-channel(H10515B series) / 32-channel(H7260 series) FEATURES ● High Cathode Sensitivity

Contextual Info: ALA400/401 LINEAR ARRAY Description The ALA400/401 Linear Array Family is fabricated using the complementary bipolar integrated circuit CBIC process that offers the advantages of vertical NPN and vertical PNP transistors. CBIC technology offers the advantage of

Contextual Info: * AT&T Preliminary Data Sheet ALA400/401 Linear Array Family Description The ALA400/401 Linear Array Family is fabricated using the complementary bipolar integrated circuit CBIC process that offers the advantages of vertical NPN and vertical PNP transistors. CBIC technology

pnp 8 transistor array

Abstract: ALA400 transistor BIPOLAR npn 8 transistor array 1000 volt pnp transistor JFET 401 ARRAY resistor DS87-61LBC kss 216 complementary JFET
Contextual Info: AT&T Preliminary Data Sheet ALA400/401 Linear Array Fam ily Description The ALA400/401 Linear Array Family is fabricated using the complementary bipolar integrated circuit CBIC process that offers the advantages of vertical NPN and vertical PNP transistors. CBIC technology

Contextual Info: IMAGE SENSOR InGaAs linear image sensor G9201 to G9204 series Image sensor for DWDM wavelength monitor G9201 to G9204 series InGaAs linear image sensors are specifically designed as detectors for monitoring WDM in optical communications. These linear image sensors consist of an InGaAs photodiode array with each pixel connected to a charge amplifier array comprised of CMOS transistors,

Contextual Info: InGaAs linear image sensors G9211 to G9214 series G9205 to G9208 series Near infrared image sensors 0.9 to 1.67 m / 2.55 μm The G9211 to G9214/G9205 to G9208 series InGaAs linear image sensors are specifically designed for near infrared multichannel spectrophotometry. These linear image sensors consist of an InGaAs photodiode array, a charge amplifier array, an

CDS light sensor

Abstract: G8050 G8051 G8052 G8052-256D G8053 G8053-512D infrared cmos digital image
Contextual Info: IMAGE SENSOR InGaAs linear image sensor G8050 to G8053 series Image sensor for DWDM wavelength monitor G8050 to G8053 series InGaAs linear image sensors are specifically designed as detectors for monitoring WDM in optical communications. These linear image sensors consist of an InGaAs photodiode array with each pixel connected to a charge amplifier array comprised of CMOS transistors,

G8053

Abstract: G8053-512R G8053-512S G8050 G8050-256R G8050-256S G8051-512R G8051-512S G8052-256R G8052-256S
Contextual Info: IMAGE SENSOR InGaAs linear image sensor G8050 to G8053 series Image sensor for DWDM wavelength monitor G8050 to G8053 series InGaAs linear image sensors are specifically designed as detectors for monitoring WDM in optical communications. These linear image sensors consist of an InGaAs photodiode array with each pixel connected to a charge amplifier array comprised of CMOS transistors,

InGaAs photodiode array chip

Abstract: charge amplifier array G11135 Image Sensors G11135-512DE
Contextual Info: InGaAs linear image sensors G11135 series Single video line 256/512 pixels near infrared image sensor (0.95 to 1.7 m) The G11135 series InGaAs linear image sensors designed for foreign object inspection equipment. These linear image sensors consist of an InGaAs photodiode array and CMOS chip that contains a charge amplifier array, an offset compensation circuit,

C7557

Abstract: C8061-01 C8062-01 G9201 G9202 G9203 G9203-256D G9204 G9204-512D
Contextual Info: IMAGE SENSOR InGaAs linear image sensor G9201 to G9204 series Image sensor for DWDM wavelength monitor G9201 to G9204 series InGaAs linear image sensors are specifically designed as detectors for monitoring WDM in optical communications. These linear image sensors consist of an InGaAs photodiode array with each pixel connected to a charge amplifier array comprised of CMOS transistors,

Contextual Info: InGaAs linear image sensors G9211 to G9214 series G9205 to G9208 series Near infrared image sensors 0.9 to 1.67 m / 2.55 μm The G9211 to G9214/G9205 to G9208 series InGaAs linear image sensors are specifically designed for near infrared multichannel spectrophotometry. These linear image sensors consist of an InGaAs photodiode array, a charge amplifier array, an

Contextual Info: IMAGE SENSOR InGaAs linear image sensor G9201 to G9204 series Image sensor for DWDM wavelength monitor G9201 to G9204 series InGaAs linear image sensors are specifically designed as detectors for monitoring WDM in optical communications. These linear image sensors consist of an InGaAs photodiode array with each pixel connected to a charge amplifier array comprised of CMOS transistors,

Contextual Info: IMAGE SENSOR InGaAs linear image sensor G9201 to G9204 series Image sensor for DWDM wavelength monitor G9201 to G9204 series InGaAs linear image sensors are specifically designed as detectors for monitoring WDM in optical communications. These linear image sensors consist of an InGaAs photodiode array with each pixel connected to a charge amplifier array comprised of CMOS transistors,

Photodiode Array 32 element

Contextual Info: 16-element Si photodiode array S5668 series Long and narrow format by multiple arrays S5668-021 The S5668 series is a 16-element Si photodiode linear array. Each element has an active area of 1.175 mm width x 2.0 mm (height) and is arrayed at an element pitch of 1.575 mm. The entire linear array is mounted on a 25.4 mm (1 inch)

CCD linear array

Abstract: RL2048PAG-021 RL1024PAG-021 RL0512PAG-021 fast linear ccd 512 linear array photodiode 2048 elements RL2048PAQ-021 2048 x 1 ccd linear array diode 250nm RL2048P
Contextual Info: CCD P-Series Linear Photodiode Array Imagers 14µm, single output, 512, 1024, 2048 elements Features Description In the P-series linear imager, PerkinElmer has combined the best features of high-sensitivity photodiode array detection and high-speed chargecoupled scanning to offer an uncompromising solution to the increasing

Photodiode Array 32 element

Abstract: scintillator
Contextual Info: 16-element Si photodiode array S5668 series Long and narrow format by multiple arrays S5668-021 The S5668 series is a 16-element Si photodiode linear array. Each element has an active area of 1.175 mm width x 2.0 mm (height) and is arrayed at an element pitch of 1.575 mm. The entire linear array is mounted on a 25.4 mm (1 inch) long PC

Photodiode Array 32 element

Contextual Info: 16-element Si photodiode array S5668 series Long and narrow format by multiple arrays S5668-021 The S5668 series is a 16-element Si photodiode linear array. Each element has an active area of 1.175 mm width x 2.0 mm (height) and is arrayed at an element pitch of 1.575 mm. The entire linear array is mounted on a 25.4 mm (1 inch) long PC

G9205

Contextual Info: InGaAs linear image sensors G9211 to G9214 series G9205 to G9208 series Near infrared image sensors 0.9 to 1.67 m / 2.55 μm The G9211 to G9214/G9205 to G9208 series InGaAs linear image sensors are specifically designed for near infrared multichannel spectrophotometry. These linear image sensors consist of an InGaAs photodiode array, a charge amplifier array, an offset compensation circuit, a shift register and a timing generator formed on a CMOS chip. The charge amplifier array is made up of CMOS

quantum well

Abstract: 20 watt laser diode
Contextual Info: TH-C1420-S 20W CW LINEAR BAR ARRAY DESCRIPTION The TH-C1420-S is a high optical power laser diode source operating at 20 Watt in CW mode. This linear bar array is ideal for applications which request high output power like pumping solid state lasers , illuminators , beacons ,.

CCD linear array

Abstract: RL2048PAQ-712 RL1024 linear array photodiode 2048 elements 16 Photodiode-Array 2048 x 1 ccd linear array linear CCD 512 linear uv photodiode array Photodiode Array linear DSP101
Contextual Info: Imaging Telecom Imaging Product Line P-Series Linear Photodiode Array Imagers 14µm, single output, 512, 1024, 2048 elements Description In the P-series linear imagers, PerkinElmer has combined the best features of high-sensitivity photodiode array detection and high-speed chargecoupled scanning to offer an uncompromising solution to the increasing

pnp 8 transistor array

Abstract: ALA200 PNP UHF transistor npn 8 transistor array 1100 RESISTOR ARRAY 003FI
Contextual Info: Preliminary Data Sheet fg p AT&T 9?^¿93 ALA200 UHF Linear Array C om plem entary NPN and PNP Transistors Description The ALA200 UHF Linear Array is a semi-custom integrated circuit consisting of very high-frequency uncommitted vertical NPN and PNP transistors, capacitors, and ion-implanted resistors. Designed on a