LINEAR ARRAY UNIT Search Results

E6572

Abstract: E678-32B H7260-01 UV CATHODE TUBE H7260 H7260K R5900U-00-L16 R5900U-01-L16 R5900U-03-L16 R5900U-L16
Contextual Info: LINEAR ARRAY MULTIANODE PMT AND ASSEMBLY R5900U-L16 SERIES, H7260 SERIES Multianode 16 Channel Linear Array R5900U-L16: PMT Multianode 32 Channel Linear Array (H7260: PMT ASSEMBLY) FEATURES ● High Cathode Sensitivity Luminous 250 µA/lm Typ. (-01 Type)

MLX75306

Abstract: Timing Generator for Frame Readout 8 bit LFSR for test pattern generation Melexis photodiode MLX75306KXZ-BAA-000-RE
Contextual Info: MLX75306 rd 3 Generation Linear Optical Array General Description rd The MLX75306 is the Melexis 3 generation automotive linear optical sensor array, including a 142 x 1 array of photodiodes, associated charge amplifier circuitry and a pixel data-hold function that provides

MLX75306

Abstract: TZ12 640LSB CDF-AEC-Q100-002 SO16NB 8 bit LFSR for test pattern generation Melexis photodiode
Contextual Info: MLX75306 3 Generation Linear Optical Array rd General Description rd The MLX75306 is the Melexis 3 generation automotive linear optical sensor array, including a 142 x 1 array of photodiodes, associated charge amplifier circuitry and a pixel data-hold function that provides

Contextual Info: ALA501 High-Voltage, Sem icustom Linear/D igital Array Description The ALA501 High-Voltage, Semicustom Linear/Digital Array is a versatile, smart-power IC consisting of user-configurable, high-voltage, linear devices and CMOS logic. Users can design their own proprietary

Contextual Info: LINEAR ARRAY MULTIANODE PMT ASSEMBLIES AND MODULES Photomultiplier Tube with Active Divider Circuit Linear Array Multianode PMT Assembly, 8-channel H9530 series / 16-channel(H10515B series) / 32-channel(H7260 series) FEATURES ● High Cathode Sensitivity

Contextual Info: ALA400/401 LINEAR ARRAY Description The ALA400/401 Linear Array Family is fabricated using the complementary bipolar integrated circuit CBIC process that offers the advantages of vertical NPN and vertical PNP transistors. CBIC technology offers the advantage of

Contextual Info: * AT&T Preliminary Data Sheet ALA400/401 Linear Array Family Description The ALA400/401 Linear Array Family is fabricated using the complementary bipolar integrated circuit CBIC process that offers the advantages of vertical NPN and vertical PNP transistors. CBIC technology

pnp 8 transistor array

Abstract: ALA400 transistor BIPOLAR npn 8 transistor array 1000 volt pnp transistor JFET 401 ARRAY resistor DS87-61LBC kss 216 complementary JFET
Contextual Info: AT&T Preliminary Data Sheet ALA400/401 Linear Array Fam ily Description The ALA400/401 Linear Array Family is fabricated using the complementary bipolar integrated circuit CBIC process that offers the advantages of vertical NPN and vertical PNP transistors. CBIC technology

TSL1401

Contextual Info: 400 dpi 128 x 1 Linear Array with Hold Applications/End Equipment Description The TSL1401 linear sensor array with hold consists of 128 x 1 array photodiodes, associated charge amplifier circuitry, and a pixel data-hold function that provides simultaneous integration start and stop times for all pixels. The pixels measure 63.5 µm H by 55 µm (W) with

Yaesu

Abstract: marking code msop - 8 package analog devices F617 a007 PE4141-08MSOP-EK Analog 8 msop devices marking marking code 8 lead msop package analog devices
Contextual Info: Product Specification PE4141 Ultra-linear UltraCMOS Broadband Quad MOSFET Array Product Description Features • Ultimate Quad MOSFET array The PE4141 is an ultra-high linearity passive broadband Quad MOSFET array with high dynamic range performance capable

PE4141

Contextual Info: Product Specification PE4141 Ultra-linear UltraCMOS Broadband Quad MOSFET Array Product Description Features • Ultimate Quad MOSFET array The PE4141 is an ultra-high linearity passive broadband Quad MOSFET array with high dynamic range performance

Contextual Info: Product Specification PE4141 Ultra-linear UltraCMOS Broadband Quad MOSFET Array Product Description Features • Ultimate Quad MOSFET array The PE4141 is an ultra-high linearity passive broadband Quad MOSFET array with high dynamic range performance

marking code 8 lead msop package analog devices

Abstract: marking code 10 lead msop package analog devices Analog devices marking Information MSOP Analog 8 msop devices marking pe4141 marking code 8 lead msop package
Contextual Info: Product Specification PE4141 Ultra-linear UltraCMOS Broadband Quad MOSFET Array Product Description Features • Ultimate Quad MOSFET array The PE4141 is an ultra-high linearity passive broadband Quad MOSFET array with high dynamic range performance

Contextual Info: IMAGE SENSOR InGaAs linear image sensor G9201 to G9204 series Image sensor for DWDM wavelength monitor G9201 to G9204 series InGaAs linear image sensors are specifically designed as detectors for monitoring WDM in optical communications. These linear image sensors consist of an InGaAs photodiode array with each pixel connected to a charge amplifier array comprised of CMOS transistors,

CDS light sensor

Abstract: G8050 G8051 G8052 G8052-256D G8053 G8053-512D infrared cmos digital image
Contextual Info: IMAGE SENSOR InGaAs linear image sensor G8050 to G8053 series Image sensor for DWDM wavelength monitor G8050 to G8053 series InGaAs linear image sensors are specifically designed as detectors for monitoring WDM in optical communications. These linear image sensors consist of an InGaAs photodiode array with each pixel connected to a charge amplifier array comprised of CMOS transistors,

Contextual Info: InGaAs linear image sensors G9211 to G9214 series G9205 to G9208 series Near infrared image sensors 0.9 to 1.67 m / 2.55 m The G9211 to G9214/G9205 to G9208 series InGaAs linear image sensors are specifically designed for near infrared multichannel spectrophotometry. These linear image sensors consist of an InGaAs photodiode array, a charge amplifier array, an

G8053

Abstract: G8053-512R G8053-512S G8050 G8050-256R G8050-256S G8051-512R G8051-512S G8052-256R G8052-256S
Contextual Info: IMAGE SENSOR InGaAs linear image sensor G8050 to G8053 series Image sensor for DWDM wavelength monitor G8050 to G8053 series InGaAs linear image sensors are specifically designed as detectors for monitoring WDM in optical communications. These linear image sensors consist of an InGaAs photodiode array with each pixel connected to a charge amplifier array comprised of CMOS transistors,

InGaAs photodiode array chip

Abstract: charge amplifier array G11135 Image Sensors G11135-512DE
Contextual Info: InGaAs linear image sensors G11135 series Single video line 256/512 pixels near infrared image sensor (0.95 to 1.7 m) The G11135 series InGaAs linear image sensors designed for foreign object inspection equipment. These linear image sensors consist of an InGaAs photodiode array and CMOS chip that contains a charge amplifier array, an offset compensation circuit,

C7557

Abstract: C8061-01 C8062-01 G9201 G9202 G9203 G9203-256D G9204 G9204-512D
Contextual Info: IMAGE SENSOR InGaAs linear image sensor G9201 to G9204 series Image sensor for DWDM wavelength monitor G9201 to G9204 series InGaAs linear image sensors are specifically designed as detectors for monitoring WDM in optical communications. These linear image sensors consist of an InGaAs photodiode array with each pixel connected to a charge amplifier array comprised of CMOS transistors,

Contextual Info: InGaAs linear image sensors G9211 to G9214 series G9205 to G9208 series Near infrared image sensors 0.9 to 1.67 m / 2.55 μm The G9211 to G9214/G9205 to G9208 series InGaAs linear image sensors are specifically designed for near infrared multichannel spectrophotometry. These linear image sensors consist of an InGaAs photodiode array, a charge amplifier array, an

Contextual Info: IMAGE SENSOR InGaAs linear image sensor G9201 to G9204 series Image sensor for DWDM wavelength monitor G9201 to G9204 series InGaAs linear image sensors are specifically designed as detectors for monitoring WDM in optical communications. These linear image sensors consist of an InGaAs photodiode array with each pixel connected to a charge amplifier array comprised of CMOS transistors,

G9204

Abstract: C7557 C8061-01 G9201 G9202 G9203 G9203-256D G9204-512D infrared cmos digital image Photodiode Array 32 element
Contextual Info: IMAGE SENSOR InGaAs linear image sensor G9201 to G9204 series Image sensor for DWDM wavelength monitor G9201 to G9204 series InGaAs linear image sensors are specifically designed as detectors for monitoring WDM in optical communications. These linear image sensors consist of an InGaAs photodiode array with each pixel connected to a charge amplifier array comprised of CMOS transistors,

Contextual Info: IMAGE SENSOR InGaAs linear image sensor G9201 to G9204 series Image sensor for DWDM wavelength monitor G9201 to G9204 series InGaAs linear image sensors are specifically designed as detectors for monitoring WDM in optical communications. These linear image sensors consist of an InGaAs photodiode array with each pixel connected to a charge amplifier array comprised of CMOS transistors,

detector ingaas

Contextual Info: InGaAs linear image sensors G9211 to G9214 series G9205 to G9208 series Near infrared image sensors 0.9 to 1.67 m / 2.55 μm The G9211 to G9214/G9205 to G9208 series InGaAs linear image sensors are specifically designed for near infrared multichannel spectrophotometry. These linear image sensors consist of an InGaAs photodiode array, a charge amplifier array, an