LIGHT EMITTING DIODE GENERAL Search Results

AVERAGE QUASI PEAK AND PEAK DETECTOR

Abstract: nixie tube circuit
Contextual Info: • PRODUCT EMITTING DIODES LIGHT EMITTING DIODES APPLICATION NOTES Among photo semiconductor devices, the light emitting diode only exists as a P-N junction

Contextual Info: SOLID STATE D I V I S I O N LIGHT EMITTING DIODE LED Light Emitting Diode Light emitting diodes LEDs are opto-semiconductors that convert electric energy into light energy. Compared to semiconductor lasers (laser diodes or LD), LEDs offer advantages such

Contextual Info: OKI electronic components OLP124 _ GaAs Infrared Light Emitting Diode GENERAL DESCRIPTION The OLD124 is a high-output GaAs infrared light emitting diode sealed with a transparent resin in a TO-18 metal case. Its light emission wavelength peaks at 940 nm. Because of its high reliability, the

Contextual Info: K2P002^-27-32 OKI electronic components QLD2203_ GaAIAs Infrared Light Emitting Diode GENERAL DESCRIPTION The OLD22Q3 is a very high-output GaAIAs infrared light emitting diode sealed with an achromatic transparent epoxy resin. Its light emission wavelength peaks at 910 nm. The OLD22D3 can be the

OLD222

Contextual Info: OKI electronic components OLD222_ GaAs infrared Light Emitting Diode GENERAL DESCRIPTION The OLD222 is a high-output GaAlAs infrared light emitting diode sealed with a glass lens in a To18 case. Its light emission wavelength peaks at 910 ran. Because of its high reliability, the OLD222

old123

Contextual Info: OKI electronic components GaAs Infrared Light Emitting Diode GENERAL DESCRIPTION The OLD123 is a high-output GaAs infrared light emitting diode sealed with a flat glass in a TO-18 metal case. Its light emission wavelength peaks at 940 nm. Beause of its high reliability, the OLD! 23

Contextual Info: K2P0Ült>-27-32 O K I electronic components OLP222 H_ GaAIAs Infrared Light Emitting Diode with Non-Spherical Surface Lens GENERAL DESCRIPTION The OLD222H is a high-output GaAIAs infrared light emitting diode sealed with a glass lens in a

TA 8202 K

Abstract: 1000 nm light emitting diode OLD2202
Contextual Info: H2P0024-27-32 O K I electronic components OLD22Q2 GaAIAs Infrared Light Emitting Diode GENERAL DESCRIPTION The OLD22Q2 is a very high-output GaAIAs infrared light emitting diode sealed with an achromatic transparent epoxy resin. Its light emission w avelength peaks at 910 nm. The OLD22G2 can be the

Contextual Info: Infrared light emitting diode, side-view type SIM-22ST The SIM-22ST is a GaAs infrared light emitting diode housed in side emission. High output with 1.5 lens. 2.54 ± 0.1 Dimensions Unit : mm 1.0 Applications Light source for sensors 1.9 Features

Contextual Info: Infrared light emitting diode, side-view type SIM-22ST The SIM-22ST is a GaAs infrared light emitting diode housed in side emission. High output with 1.5 lens. Applications Light source for sensors 1.0 2.54 ± 0.1 Dimensions Unit : mm 1.9 Features

SIM-22ST

Contextual Info: Infrared light emitting diode, side-view type SIM-22ST The SIM-22ST is a GaAs infrared light emitting diode housed in side emission. High output with 1.5 lens. 1.0 2.54 ± 0.1 Dimensions Unit : mm Applications Light source for sensors 1.9 Features

LN172

Contextual Info: Infrared Light Emitting Diodes LN172 GaAlAs Infrared Light Emitting Diode Unit : mm ø4.2 +0.2 –0.1 Features High-power output, high-efficiency : PO = 12 mW typ. Light emitting spectrum suited for silicon photodetectors : λP = 900 nm (typ.) 2.4±0.3 12.7 min.

Contextual Info: I-2PIW14-27-32 OKI electronic components 0L P125_ GaAs Infrared Light Emitting Diode GENERAL DESCRIPTION The OLD125 is a high-output GaAs infrared light emitting diode sealed with a transparent epoxy resin in a ceramic case. Its light emission wavelength peaks at 940 n m . Because of its high reliability,

eh200

Contextual Info: F:2P0I. US-27-33 O K I electronic OLD224 components GaAIAs Infrared Light Emitting Diode GENERAL DESCRIPTION The OLD224 is a high-output GaAIAs infrared light emitting diode sealed with a transparent epoxy resin in a TO-18 case. Its light emission wavelength peaks at 910 nm. Because of its high reliability,

OCS32

Contextual Info: !:2STh139-27-33 OKI electronic components 0C S32 Optical PNPN Switches GENERAL DESCRIPTION The OCS32 is an optical PNPN switch, combining an infrared light emitting diode and PNPN elements photothyristors in a single 8-pin plastic package. The GaAs light emitting diode acts as

LN189L

Contextual Info: Infrared Light Emitting Diodes LN189L GaAlAs Infrared Light Emitting Diode Unit : mm 1 Light source for distance measuring systems 0.4±0.1 Infrared light emission close to monochromatic light : λP = 880 nm typ. Narrow directivity using spherical lenses; works well with optical

910nm

Contextual Info: O K I electronic components 0LD225 GaAIAs Infrared Light Emitting Diode GENERAL DESCRIPTION T heO L D 225 is a high-output GaAIAs infrared light emitting diode sealed w ith a transparent epoxy resin in a ceramic case. Its light emission wavelength peaks at 910 ran. The O LD 225 can have the

photo sensor pin diagram

Abstract: transistor 1BT transistor 1BT 12 nIc 4 PHOTO SENSOR of application OCS33 vak-50v 1Bt 60
Contextual Info: OKI electronic components OCS33 Optical PNPN Switches GENERAL DESCRIPTION The OCS33 is an optical PNPN switch, combining a GaAs infrared light emitting diode and a silicon PNPN photo sensor in a single 8-pin plastic package. The GaAs light emitting diode acts as the input

Contextual Info: Infrared Light Emitting Diodes LN52 GaAs Infrared Light Emitting Diode Unit : mm 3.0±0.3 For optical control systems Wide directivity, matched for external optical systems : θ = 100 deg. Infrared light emission close to monochromatic light : λP = 950 nm

4 PIN TO46 package

Abstract: TO-46-type
Contextual Info: E2P0021-27-32 O K I electronic components OLD232 GaAIAs Infrared Light Emitting Diode GENERAL DESCRIPTION The OLD232 is a high-output GaAIAs infrared light emitting diode sealed with a glass lens in a high­ ly reliable metal can on a TO-46 type stem. Its light emission w ave peaks at 910 run.

PNPN

Abstract: OCS32 photo sensor pin diagram PHOTO SENSOR of application 357 photo
Contextual Info: OKI electronic com ponents OCS32 Optical PNPN Switches GENERAL DESCRIPTION The OCS32 is an optical PNPN switch, combining a GaAs infrared light emitting diode and a silicon PNPN photo sensor in a single 8-pin plastic package. The GaAs light emitting diode acts as the input

Contextual Info: Galliumarsenidphosphid-Lumineszenzdioden GaAsP Red Light Emitting Diodes Anwendung: Application: Rotleuchtende Diode für allgemeine Anzeigezwecke Red light em itting diode for general indicating purposes Besondere Merkmale: Features: • Kunststoffgehäuse

Contextual Info: Infrared Light Emitting Diodes LN162S GaAs Infrared Light Emitting Diode For optical control systems Unit: mm 3.75±0.3 • Features 12.5 min. • High-power output, high-efficiency: PO = 3.5 mW typ. • Infrared light emission close to monochromatic light:

LN162S

Contextual Info: Infrared Light Emitting Diodes LN162S GaAs Infrared Light Emitting Diode Unit : mm ø3.0±0.15 3.75±0.3 2.0±0.2 For optical control systems Features High-power output, high-efficiency : PO = 3.5 mW typ. 12.5 min. Infrared light emission close to monochromatic light :