LIGHT EMITTING DIODE GENERAL Search Results

Contextual Info: OKI electronic components OLP124 _ GaAs Infrared Light Emitting Diode GENERAL DESCRIPTION The OLD124 is a high-output GaAs infrared light emitting diode sealed with a transparent resin in a TO-18 metal case. Its light emission wavelength peaks at 940 nm. Because of its high reliability, the

Contextual Info: K2P002^-27-32 OKI electronic components QLD2203_ GaAIAs Infrared Light Emitting Diode GENERAL DESCRIPTION The OLD22Q3 is a very high-output GaAIAs infrared light emitting diode sealed with an achromatic transparent epoxy resin. Its light emission wavelength peaks at 910 nm. The OLD22D3 can be the

OLD222

Contextual Info: OKI electronic components OLD222_ GaAs infrared Light Emitting Diode GENERAL DESCRIPTION The OLD222 is a high-output GaAlAs infrared light emitting diode sealed with a glass lens in a To18 case. Its light emission wavelength peaks at 910 ran. Because of its high reliability, the OLD222

Contextual Info: K2P0Ült>-27-32 O K I electronic components OLP222 H_ GaAIAs Infrared Light Emitting Diode with Non-Spherical Surface Lens GENERAL DESCRIPTION The OLD222H is a high-output GaAIAs infrared light emitting diode sealed with a glass lens in a

TA 8202 K

Abstract: 1000 nm light emitting diode OLD2202
Contextual Info: H2P0024-27-32 O K I electronic components OLD22Q2 GaAIAs Infrared Light Emitting Diode GENERAL DESCRIPTION The OLD22Q2 is a very high-output GaAIAs infrared light emitting diode sealed with an achromatic transparent epoxy resin. Its light emission w avelength peaks at 910 nm. The OLD22G2 can be the

Contextual Info: Infrared light emitting diode, side-view type SIM-22ST The SIM-22ST is a GaAs infrared light emitting diode housed in side emission. High output with 1.5 lens. 2.54 ± 0.1 Dimensions Unit : mm 1.0 Applications Light source for sensors 1.9 Features

Contextual Info: I-2PIW14-27-32 OKI electronic components 0L P125_ GaAs Infrared Light Emitting Diode GENERAL DESCRIPTION The OLD125 is a high-output GaAs infrared light emitting diode sealed with a transparent epoxy resin in a ceramic case. Its light emission wavelength peaks at 940 n m . Because of its high reliability,

eh200

Contextual Info: F:2P0I. US-27-33 O K I electronic OLD224 components GaAIAs Infrared Light Emitting Diode GENERAL DESCRIPTION The OLD224 is a high-output GaAIAs infrared light emitting diode sealed with a transparent epoxy resin in a TO-18 case. Its light emission wavelength peaks at 910 nm. Because of its high reliability,

910nm

Contextual Info: O K I electronic components 0LD225 GaAIAs Infrared Light Emitting Diode GENERAL DESCRIPTION T heO L D 225 is a high-output GaAIAs infrared light emitting diode sealed w ith a transparent epoxy resin in a ceramic case. Its light emission wavelength peaks at 910 ran. The O LD 225 can have the

photo sensor pin diagram

Abstract: transistor 1BT transistor 1BT 12 nIc 4 PHOTO SENSOR of application OCS33 vak-50v 1Bt 60
Contextual Info: OKI electronic components OCS33 Optical PNPN Switches GENERAL DESCRIPTION The OCS33 is an optical PNPN switch, combining a GaAs infrared light emitting diode and a silicon PNPN photo sensor in a single 8-pin plastic package. The GaAs light emitting diode acts as the input

Contextual Info: Infrared Light Emitting Diodes LN52 GaAs Infrared Light Emitting Diode Unit : mm 3.0±0.3 For optical control systems Wide directivity, matched for external optical systems : θ = 100 deg. Infrared light emission close to monochromatic light : λP = 950 nm

4 PIN TO46 package

Abstract: TO-46-type
Contextual Info: E2P0021-27-32 O K I electronic components OLD232 GaAIAs Infrared Light Emitting Diode GENERAL DESCRIPTION The OLD232 is a high-output GaAIAs infrared light emitting diode sealed with a glass lens in a high­ ly reliable metal can on a TO-46 type stem. Its light emission w ave peaks at 910 run.

PNPN

Abstract: OCS32 photo sensor pin diagram PHOTO SENSOR of application 357 photo
Contextual Info: OKI electronic com ponents OCS32 Optical PNPN Switches GENERAL DESCRIPTION The OCS32 is an optical PNPN switch, combining a GaAs infrared light emitting diode and a silicon PNPN photo sensor in a single 8-pin plastic package. The GaAs light emitting diode acts as the input

Contextual Info: Galliumarsenidphosphid-Lumineszenzdioden GaAsP Red Light Emitting Diodes Anwendung: Application: Rotleuchtende Diode für allgemeine Anzeigezwecke Red light em itting diode for general indicating purposes Besondere Merkmale: Features: • Kunststoffgehäuse

OLD122

Abstract: OLD122B OLD122C OLD122-C
Contextual Info: K r o o n -27-33 O K I electronic components OLP122 GaAs Infrared Light Emitting Diode GENERAL DESCRIPTION The OLD122 is a high-output GaAs infrared light emitting diode sealed with a glass lens in a TO-18 metal case. Its light emission wavelength peaks at 940 nm. Because of its high reliability, the OLD122

Contextual Info: Infrared Light Emitting Diodes LN189M GaAlAs Infrared Light Emitting Diode Unit: mm Light source for distance measuring systems 1 0.4±0.1 0.6 0.2 1.0 3.0±0.2 0.6±0.1 Forward current DC Pulse forward current * Reverse voltage (DC) Operating ambient temperature

Contextual Info: F.2 Pt X>2 2 - 2 7 ~3 3 O K I electronic components OLD232-2 GaAIAs Infrared Light Emitting Diode GENERAL DESCRIPTION The OLD232-2 is a high-output GaAIAs infrared light emitting diode sealed with a glass lens in a highly reliable metal can on a TO-46 type stem . Jts light emission wavelength peaks at 910 nm.

gardasoft

Abstract: indium gallium arsenide phosphide UV-LED 680nm 475nm photocontrol 320nm power led 530nm PP500 Orange605nm
Contextual Info: Light Emitting Diodes - A Primer Russ Dahl, Opto Diode Corporation From the Web Exclusive, "Seeing the True Colors of LEDs." Light emitting diodes LEDs are semiconductors that convert electrical energy into light energy. The color of the emitted light depends on the semiconductor material

Telefunken diode color code

Abstract: TDSG5160 telefunken led display
Contextual Info: T em ic TELEFUNKEN Semiconductors Explanation of Technical Data TEMIC light emitting diodes and displays are generally designated in accordance with the TEMIC designation system: TL. = Light emitting diode TD. = Display The following figures show how the components can be identified.

Telefunken diode color code

Abstract: smd code qv diode receptor ir QV smd
Contextual Info: Vishay Telefunken General Information Explanation of Technical Data Vishay light emitting diodes and displays are generally designated in accordance with the Vishay designation system: TL. = Light emitting diode TD. = Display The following figures show how the components can be identified.

Contextual Info: Infrared Light Emitting Diodes LN66F GaAs Infrared Light Emitting Diode For remote control systems Unit: mm 7.65±0.2 1.0 3.9±0.31 (1.0) 11.5±1.0 • High-power output, high-efficiency: Ie = 13.0 mW/sr (min.) • Emitted light spectrum suited for silicon photodetectors

Contextual Info: Infrared Light Emitting Diodes LN66F GaAs Infrared Light Emitting Diode For remote control systems Unit: mm 7.65±0.2 1.0 3.6±0.3 (1.0) 13.5±1.0 • High-power output, high-efficiency: Ie = 13.0 mW/sr (min.) • Emitted light spectrum suited for silicon photodetectors

LNA2901L

Contextual Info: Infrared Light Emitting Diodes LNA2901L GaAs Infrared Light Emitting Diode Unit : mm ø5.0±0.2 7.65±0.2 1.0 Not soldered 2.25 For optical control systems Features High-power output, high-efficiency : Ie = 9 mW/sr min. Emitted light spectrum suited for silicon photodetectors

OLD2203

Abstract: light emitting diode general light emitting diode configuration QLD2203 Infrared Emitting Diode 910nm
Contextual Info: O K I electronic components QLD2203 GaAIAs Infrared Light Emitting Diode GENERAL DESCRIPTION TheOLD2203 is a superhigh-output GaAIAs infrared light emission diode sealed with an achromatic transparent epoxy resin. Its light emission wave peaks at 910 nm. The OLD2203 can be the most