LIGHT DIODE AI Search Results

Contextual Info: 3GE » NEC • L 4 5 7 5 5 5 005^515 T ■ ELECTRONICS INC T-4 -é>*7 LIGHT EMITTING DIODE ._/ NDL4201A 850 nm O PTICA L FIB ER COM M UNICATIONS AIGaAs LIGHT EMITTING DIODE DESCRIPTION NDL4201A is an AIGaAs double heterostructure light emitting diode designed for a light source of medium distance and

LN189S

Contextual Info: Infrared Light Emitting Diodes LN189S GaAlAs Infrared Light Emitting Diode Unit : mm 1 Light source for distance measuring systems 0.4±0.1 Infrared light emission close to monochromatic light : λP = 880 nm typ. Narrow direcivity using spherical lenses; works well with optical

ETC 529 DIODE

Abstract: NDL7910P NX7460LE NX7461LE NX7660JC NX8501 NX8561JD NX8570SA NX8570SA-BA NX8570SA-CA
Contextual Info: PRELIMINARY DATA SHEET LASER DIODE NX8570SA 1 550 nm CW LIGHT SOURCE InGaAsP MQW-DFB LASER DIODE MODULE WITH WAVELENGTH MONITOR DESCRIPTION The NX8570SA is a 1 550 nm laser diode with wavelength monitor function. This device is designed as CW light source and ideal for transmission systems in which external modulators are

LNA2901L

Contextual Info: Infrared Light Emitting Diodes LNA2901L GaAs Infrared Light Emitting Diode Unit : mm ø5.0±0.2 7.65±0.2 1.0 Not soldered 2.25 For optical control systems Features High-power output, high-efficiency : Ie = 9 mW/sr min. Emitted light spectrum suited for silicon photodetectors

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Infrared Light Emitting Diodes LN66F GaAs Infrared Light Emitting Diode For optical control systems • Features  High-power output, high-efficiency: Ie = 13.0 mW/sr (min.)  Emitted light spectrum suited for silicon photodetectors

LNA2904L

Abstract: LN166
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Infrared Light Emitting Diodes LNA2904L (LN166) GaAs Infrared Light Emitting Diode For optical control systems • Features  High-power output, high-efficiency: Ie = 10 mW/sr (min.)  Emitted light spectrum suited for silicon photodetectors

Contextual Info: mu GaAs LIGHT-EMITTING DIODE 62033 TYPE GS 5040 O P TO ELEC TR O N IC PRODUCTS DIVISION * HIGH INTENSITY GaAIAs VERSION AVAILABLE RECESSED TO-46 HEADER FOR PRECISE BEAM ALIGNMENT HIGH EFFICIENCY HERMETIC PACKAGE Mii 62033 is a P-N GaAs Infrared Light Emitting Diode in a lensed TO-46 package, and is spectrally matched to

Contextual Info: Panasonic Infrared Light Emitting Diodes LN189L GaAIAs Infrared Light Emitting Diode Unit : mm Light source for distance m easuring system s 0.4 • 0 .6+ 0.1 M a r k R e d — F eatures • H igh-pow er output, high-efficiency : P Q = 5.5 m W (typ.) :E

CNZ1120

Abstract: ON1120
Contextual Info: Transmissive Photosensors Photo lnterrupters CNZ1120 (ON1120) Photo lnterrupter For contactless SW, object detection Unit: mm • Overview CNZ1120 is a photocoupler in which a high efficiency GaAs infrared light emitting diode is used as the light emitting element,

continuous wave light source for dwdm system

Abstract: NX8300BE-CC NX8300CE-CC NX8303BG-CC NX8303CG-CC NX8304BE-CC NX8563 NX8563LB NX8563LF 10 gb laser diode
Contextual Info: DATA SHEET LASER DIODE NX8563 Series 1 550 nm InGaAsP MQW-DFB LASER DIODE MODULE CW LIGHT SOURCE FOR DWDM APPLICATIONS DESCRIPTION The NX8563 Series is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode module with Polarization Maintain

NX8571SCxxxQ-BA

Contextual Info: DATA SHEET LASER DIODE NX8571SCxxxQ-BA 1 550 nm CW LIGHT SOURCE InGaAsP MQW-DFB LASER DIODE MODULE WITH WAVELENGTH MONITOR DESCRIPTION The NX8571SCxxxQ-BA is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode module with wavelength

NX8562LB

Abstract: NX8562LB279 NX8562LB295 NX8562LB303 NX8562LB311 NX8562LB318 NX8562LB326 continuous wave laser stm-16
Contextual Info: DATA SHEET LASER DIODE NX8562LB 1 550 nm InGaAsP MQW-DFB LASER DIODE MODULE CW LIGHT SOURCE FOR DWDM APPLICATIONS DESCRIPTION The NX8562LB is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode module with Polarization Maintain Fiber (PMF).

362d

Abstract: 315D 346D 377D NX8570SA b 803 a NX8570SD 933D 618D
Contextual Info: DATA SHEET LASER DIODE NX8570 Series 1 550 nm CW LIGHT SOURCE InGaAsP MQW-DFB LASER DIODE MODULE WITH WAVELENGTH MONITOR DESCRIPTION The NX8570 Series is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode module with wavelength

nec nx8562

Contextual Info: DATA SHEET LASER DIODE NX8570SCxxxQ-BA 1 550 nm CW LIGHT SOURCE InGaAsP MQW-DFB LASER DIODE MODULE WITH WAVELENGTH MONITOR DESCRIPTION The NX8570SCxxxQ-BA is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode module with wavelength

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Infrared Light Emitting Diodes LN75X GaAIAs Infrared Light Emitting Diode For optical control systems • Features M Di ain sc te on na tin nc ue e/ d  High-power output, high-efficiency: PO = 10 mW (typ.)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Infrared Light Emitting Diodes LN65 GaAs Infrared Light Emitting Diode For optical control systems • Features M Di ain sc te on na tin nc ue e/ d  High-power output, high-efficiency: PO = 5.5 mW (typ.)

Infrared Emitting Diode

Abstract: IR Blue Light infrared LN189S
Contextual Info: Panasonic Infrared Light Emitting Diodes LN189S GaAIAs Infrared Light Emitting Diode U n it : m m Light source for distance m easuring system s - M a r k B lu e • 0 . 6± 0 .1 F eatures • H igh-pow er output, high-efficiency : P Q = 5.5 mW (typ.)

Contextual Info: NICROPAC INDUSTRIES INC ESI L.112U40 DOQQiaH fl El DPI rmrl 42E D GaAs LIGHT-EMITTING DIODE “PILL PACK” 62000 TYPE GS 1140 I MM * HIGH INTENSITY GaAIAs VERSIONS AVAILABLE MINIATURE HIGH EFFICIENCY LED GLASS/CERAMIC/KOVAR HERMETIC PACKAGE Mii 62000 is a P-N GaAs Infrared Light Emitting Diode in a package designed to be mounted in a double-clad

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Infrared Light Emitting Diodes LN175 GaAlAs Infrared Light Emitting Diode For optical control systems • Features M Di ain sc te on na tin nc ue e/ d  High-power output, high-efficiency: PO = 12 mW (typ.)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Infrared Light Emitting Diodes LN78 GaAIAs Infrared Light Emitting Diode For optical control systems • Features M Di ain sc te on na tin nc ue e/ d  High-power output, high-efficiency: PO = 10 mW (typ.)

900 nm LED

Abstract: DIODE NU CND0201A
Contextual Info: Panasonic IrDA Compliant Transceiver CND0201 A Overview •T he Optical Transmission Module, CND0201A is incorporating a high-speed AIGaAs infrared light emitting diode, a high-speed PEN photo-diode and an integrated signal processing circuit. The module is conformable to IrDA1.2a(Low Power Type)physical Layer specification.

ON1114

Abstract: CNA1012K
Contextual Info: Transmissive Photosensors Photo lnterrupters CNA1012K (ON1114) Photo lnterrupter Unit: mm For contactless SW, object detection • Overview 0.45±0.1 CNA1012K is a photocoupler in which a high efficiency GaAs infrared light emitting diode is used as the light emitting element, and

TOSA DWDM

Abstract: TEC TOSA transistor NEC D 587 PX10160E NX8530NH dwdm tosa
Contextual Info: DATA SHEET LASER DIODE NX8530NH,NX8531NH 1 550 nm InGaAsP MQW-DFB LASER DIODE MODULE 2.5 Gb/s DIRECTLY MODULATION LIGHT SOURCE FOR DWDM APPLICATIONS DESCRIPTION The NX8530NH and NX8531NH are 1 550 nm Multiple Quantum Wells MQW structured Distributed Feed-Back (DFB) laser diode module TOSA

an7060

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Infrared Light Emitting Diodes LNA2802L (LN68) GaAs Infrared Light Emitting Diode For optical control systems • Features  Absolute Maximum Ratings Ta = 25°C Parameter di p Pl lan nclu ea