LH511 Search Results

LH5116H

Contextual Info: LH5116/H C M O S 16K 2 K x 8 S tatic RAM FEATURES DESCRIPTION • 2,048 x 8 bit organization The LH5116/H are static RAMs organized a s 2 ,0 4 8 x 8 bits. It is fabricated using silicon-gate CMOS process technology. It features high speed access in read mode

LH5116-10F

Abstract: 13B1
Contextual Info: PRODUCT SPECIFICATION Integrated Circuits Group LH5116-10F 16K SRAM Model Number: LH511613 Spec. Issue Date: Oct. 26, 2004 Spec No: EL16X147 SPECIFICATIONS ARE SUBJECT TO CHANGE WITHOUT NOTICE. Suggested applications (if any) are for standard use; See Important Restrictions for limitations on special applications. See Limited

Contextual Info: LH5116/H CMOS 16K 2K x 8 Static RAM FEATURES DESCRIPTION • 2,048 x 8 bit organization The LH5116/H are static RAMs organized as2,048 x 8 bits. It is fabricated using silicon-gate CMOS process technology. It features high speed access in read mode using output enable (tee).

Contextual Info: LH5116S FEATURES CMOS 16K 2K x 8 Static RAM PIN CONNECTIONS • 2,048 x 8 bit organization • Access time: 1000 ns (MAX.) • Low-power consumption: Operating: 33 mW (MAX.) Standby: 3.3 (MAX.) • Fully-static operation • Three-state outputs • Single +3 V power supply

lh51100

Abstract: lh511000
Contextual Info: PRELIMINARY LH511000UL C M O S 1M 1 2 8 K x 8 S ta tic R A M FEATURES DESCRIPTION • 131,072 x 8 bit organization The LH511000UL is a 1M bit static RAM organized as 131,072 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access times:

Contextual Info: MEMORIES * S tic RAMs Process C apacity Configuration Model No. A ccess tim e ns 70 80 90 100 120 LH5116 16k Full CMOS 64k 2k X 8 8k X 8 LH5116H f- Supply voltage : 5 V * 10% QpewBng tew ^raw » : ~ 40to85'C LH5116S j- Supply voltage : 3 V ± 10% LH5164A

Contextual Info: LH5116 FEATURES • 2,048 x 8 bit organization • Access time: 100 ns MAX. • Power consumption: Operating: 220 mW (MAX.) Standby: 5.5 nW (MAX.) CMOS 16K (2K x 8) Static RAM DESCRIPTION The LH5116 is a static RAM organized as 2,048 x 8 bits. It is fabricated using silicon-gate CMOS process

5116 ram

Abstract: LH5116H DIP024-P-0600 SOP024-P-0450B 0450b
Contextual Info: LH5116/H CMOS 16K 2K x 8 Static RAM FEATURES DESCRIPTION • 2,048 × 8 bit organization The LH5116/H are static RAMs organized as 2,048 × 8 bits. It is fabricated using silicon-gate CMOS process technology. It features high speed access in read mode using output enable (tOE).

LH5116S

Abstract: LH5116SN
Contextual Info: LH5116S FEATURES CMOS 16K 2K x 8 Static RAM PIN CONNECTIONS • 2,048 × 8 bit organization • Access time: 1000 ns (MAX.) • Low-power consumption: Operating: 33 mW (MAX.) Standby: 3.3 µW (MAX.) • Fully-static operation • Three-state outputs • Single +3 V power supply

LH5116H

Contextual Info: LH5116/H CMOS 16K 2K x 8 Static RAM FEATURES DESCRIPTION • 2,048 × 8 bit organization The LH5116/H are static RAMs organized as 2,048 × 8 bits. It is fabricated using silicon-gate CMOS process technology. It features high speed access in read mode using output enable (tOE).

organizational structure samsung

Abstract: NMS256X8 MICRON Cross Reference NMS256 256K RAM HM62256 MK6264 51256SL TC5565 "cross reference" MN44256 M5M5256
Contextual Info: Static RAM Cross Reference STATIC RAM CROSS REFERENCE ORGANIZATIONAL STRUCTURE 2K 2K X X 32K 8K X e w/CE, OE 8 W/CE1, CE2 X 8 Stow 8 Slow COMPETITIVE VENDOR SH ARP MODEL LH5116 LH5118 LH51256 LH5164A AMD Am9128 Harris CDM6116 Hitachi HM6116A Hyundai HY6116

1K x 4 static ram ttl

Abstract: lh5114
Contextual Info: LH5114 CMOS 4K 1K 4 Static RAM x DESCRIPTION FEATURES • 1,024 x 4 bit organization • Access tim e: • Power consumption: The LH5114H is a static RAM organized as 1,024 4 bits. It is fabricated using silicon-gate CMOS proc­ ess technology. x 150 ns (MAX.)

Contextual Info: LH5118 FEATURES • 2,048 x 8 bit organization • Access time: 100 ns MAX. • Power consumption: Operating: 220 mW (MAX.) Standby: 5.5 (MAX.) • Single +5 V power supply • Fully static operation • TTL compatible I/O • Three-state outputs • •

LH5114H15

Abstract: lh5114 1K x 8 static ram LH5114H 1K x 4 static ram ttl 1k x 4
Contextual Info: LH5114 CMOS 4K 1K x 4 S ta tic RAM FEATURES DESCRIPTION • 1,024 x 4 bit organization The LH5114H is a static RAM organized as 1,024 x 4 bits. It is fabricated using silicon-gate CMOS proc­ ess technology. • Access time: 150 ns (MAX.) • Power consumption:

Contextual Info: LH5116 FEATURES • 2,048 x 8 bit organization • Access time: 100 ns MAX. • Power consumption: CMOS 16K (2K x 8) Static RAM DESCRIPTION The LH5116 is a static RAM organized as 2,048 x 8 bits. It is fabricated using silicon-gate CMOS process technology. It features high speed access in read mode

LH5118D

Abstract: LH5118N-10 lh5118
Contextual Info: LH5118/ CMOS 16K 2K x 8 Static RAM FEATURES DESCRIPTION • 2,048 x 8 bit organization The LH5118 is a static RAM organized as 2,048 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access time: 100 ns (MAX.) • Power consumption:

LH5116NA-10F

Abstract: 13B1 LH5116NA
Contextual Info: PRODUCT SPECIFICATION Integrated Circuits Group LH5116NA-10F 16K SRAM Model Number: LH5116NC Spec. Issue Date: Oct. 22, 2004 Spec No: EL16X148 SPECIFICATIONS ARE SUBJECT TO CHANGE WITHOUT NOTICE. Suggested applications (if any) are for standard use; See Important Restrictions for limitations on special applications. See Limited

Contextual Info: MEMORIES Low voltage operation Bit Capacity configuration 16 k 64k x8 x8 ★ Access time Supply current ns MAX. Cycle time Operating Standby (ns) MIN. (mA) MAX. (mA) MAX. Model No. LH5116SN x8 x8 1M x 16 2M x 16 *1 *5 *7 Supply Operating voltage temp. (V)

lh5117

Abstract: DIP24-P-600
Contextual Info: LH5117 CMOS 16K 2K x 8 Static RAM FEATURES DESCRIPTION • 2,048 x 8 bit organization The LH5117 is a static RAM organized as 2,048 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access time: 100 ns (MAX.) The chip select input provides high speed access in

lh5116na-10

Abstract: LH5116N
Contextual Info: SHARP CORP blE D m LH5116 ÜOOtî t 7fl b3b «SRPJ CMOS 16K 2K x 8 Static RAM FEATURES DESCRIPTION • 2,048 x 8 bit organization • Access time: 100 ns (MAX.) The LH5116 is a static RAM organized as 2,048 x 8 bits. It is fabricated using silicon-gate CMOS process

LH5115

Contextual Info: SHARP ELEK/ MELEC EbE D IV Ö1ÖD7TÖ D 0G03Ö74 0 *SRPJ C M O S 16K 2KX8 Static RAM LH5115 7 = 4 i- 2 .Z - /2 LH5115 • CMOS 16K (2 K X 8 ) Static RAM D e s c rip tio n Pin C o n n e c tio n s The L H 5 1 1 5 is a fully static RAM organized as 2 , 0 4 8 X 8 bits. It is fabricated using silicon-gate

lh5116na

Abstract: 13B1
Contextual Info: PRELIMINARY PRODUCT SPECIFICATION Integrated Circuits Group LH5116NA-10FE 16K Static RAM Model Number: LH5116N9 Spec. Issue Date: October 8, 2004 Spec No: EL16X048 SPECIFICATIONS ARE SUBJECT TO CHANGE WITHOUT NOTICE. Suggested applications (if any) are for standard use; See Important Restrictions for limitations on special applications. See Limited

lh5168

Contextual Info: MEMORIES Static RAMs ★ Under development P ro ce ss C a p a c ity C o n fig u ra tio n Model No. A c c e s s tim e n s 70 80 90 100 120 LH5116 2k X 8 16k LH51116H Operating temperature : - 40 to 8 5 t IUUU "O LH5116S Supply voltage : 3 V±10% LH5168 Full

0450B

Abstract: 5116d
Contextual Info: LH5116/H CMOS 16K 2K X 8 Static RAM FEATURES DESCRIPTION • 2,048 The LH5116/H are static RAMs organized as 2,048 x 8 bits. It is fabricated using silicon-gate CMOS process technology. It features high speed access in read mode using output enable (t0E).