LH 473 Search Results

Contextual Info: REV. DATE DESCRIPTION NC 0 2 / 0 8 / 0 0 I'' O CD LH □□ NI O a 3 T INITIAL RELEASE 2.42 [.095]-c- - Í • i d - -—U o e. o lO o 1- 1 i— i DO r CT> CD o CM o *— DO F" ro co o o LT> O o in a r>. o CVJ lo r-S IN - 1 ■3.00 [.118] 12.60 [.496]

Contextual Info: Notice for TAIYO YUDEN products Please read this notice before using the TAIYO YUDEN products. REMINDERS • Product information in this catalog is as of October 2012. All of the contents specified herein are subject to change without notice due to technical improvements, etc. Therefore, please check for the latest information carefully before practical application or usage of the Products.

CAL45TB101K

Abstract: CAL 3300 CAL45 ms-620 LC-1010
Contextual Info: 有关本公司产品的注意事项 请务必在使用本公司产品目录之前阅读。 注意事项 • 本软件中记载的内容是2009年10月现在的内容。本产品目录记载的内容由于产品的改良等原因发生变更时，恕不另行

LH Research

Abstract: GW CSSRM1.PC-MFNQ-5C7E-1-700-R18
Contextual Info: EDI2AG27264V 1 Megabyte Sync/Sync Burst, Small Outline DIMM ADVANCED Advanced 2x64Kx72, 3.3V Sync/Sync Burst Flow-Through Module Features • 2x64Kx72 Synchronous, Synchronous Burst • Flow-Through Architecture • Linear Burst MODE • Clock Controlled Registered Bank

LAN02

Abstract: LHLP10NB LAL02NA
Contextual Info: 당사제품에 관한 주의사항 당사제품을 사용하실 경우에는 사전에 반드시 읽어 주십시오. 주의사항 • 당 소프트웨어의 기재 내용은 2009년10월 현재의 것입니다. 기재 내용의 개선등을 위해 예고없이 변경할 수 가 있습니다. 따라

CAL45TB100K

Abstract: CAL45TB101K CAL 3300 GU 1R5 CAL45 CAL45TB103K CAL45TB102K FBA 710
Contextual Info: 当社製品に関するお断り 当社製品をご使用頂く際には事前に必ずお読み下さい。 注 意 • 当カタログの記載内容は2009年10月現在のものです。記載内容は改良などのために予告なく変更することがあります。従いま

Contextual Info: m u EDI2CG27264V 1 Megabyte Sync/Sync Burst, Small Outline DIMM \ ELECTRONIC DESIGNS. IN C ADVANCED 2x128Kx72, 3.3V Module Features • Sync/Sync Burst Flow-Through 2x128K x72 Synchronous, S ynchronous Burst The E D I2C G 27264VxxD 2 is a S ynchronous/S ynchro­

Contextual Info: MT58LC64K16/18C5 64K X 16/18 SYNCBURST SRAM M IC R O N I TECHNOLOGY. INC SYNCHRONOUS SRAM 64K x 16/18 SRAM +3.3V SUPPLY, PIPELINED AND SELECTABLE BURST MODE FEATURES • • • • • • • • • • • • • • • • OPTIONS SA-1 « w„ „ J¥ j*. (*

74118

Abstract: ttl 74118 1FT65 D0341A4 ci 74118 GD341 1MX4 1003-D
Contextual Info: KM44C1003DJ CMOS DRAM E LE C T R O N IC S 1M x 4 Bit CMOS Quad CAS DRAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 4 bit Fast Page Mode Quad CA S C M O S DRAMs. Fast Page Mode offers high speed random access of memory cells within the sam e row. Access time -5, -6 or -7 , powér

cbu 4j

Abstract: JI21 pipeline in core i3 pipeline in core i5
Contextual Info: Preliminary - April 1998 ¡(I U d l N O l O U 2.5V or 3.3V I/O 143/133/117/100 GS840NBT18PT 256Kx 18 NBT NO BUS TURNAROUND _ PIPELINE Features Output registers are provided and are controlled by FT m ode pin. With FT mode pin, output registers can be programmed in either

Contextual Info: Tlxu F2M ♦ *# -f F2M POLYESTER FILM CAPACITORS V'J—X SERIES ^ /F E A T U R E S • itS'M^q-es^JtH^tiS it L'^t. • £ < f c i i r i ' f t . • C a p 1 02 ~ 3 3 3 li 'J - F \dy73.5. 5. Omm< 0 2 * y *-f „ • Very small size, suitable for high density assembling.

4737B

Abstract: CMOS 4000B series device 4000B
Contextual Info: 4737B 7-STAGE COUNTER D E S C R IP TIO N — The 47 3 7 B is a 7-Stage Frequency C ounter especially useful fo r freq uency synthesis in musical a pp lica tions. The device is designed to generate, fro m a prim a ry c h ro m a tic scale, each o f the tw elve flats, sharps, and naturals com prisin g each chro m a tic scale o f the seven a d d itio n a l octaves in the

Contextual Info: MITSUBISHI LSIs M5M44410AWJ,JrL,TP,RT-6L,-7L,-8L,-10L FAST PAGE MODE 4 1 9 4 3 0 4 -B IT 1 0 4 8 5 7 6 -W 0 R D BY 4-B IT D Y N A M IC RAM DESCRIPTION This is a fa m ily o f 1048576-w ord by 4 -b it dynam ic R A M S , PIN CONFIGURATION (TOP VIEW) fabricated w ith the high performance C M OS process, and

IC 741 cn

Contextual Info: July 1996 Micro Linear ML4875 Low Voltage Boost Regulator with Shutdown GENERAL DESCRIPTION FEATURES The ML4875 is a boost regulator designed for DC to DC conversion in 1 to 3 cell battery powered systems. The combination of BiCMOS process technology, internal

Contextual Info: SA M S U N G E L E C T R O N I C S INC b4E D • 7 cî b m 4 5 KMM584100N Ü G 1 4 7 5 3 2bl DRAM MODULES 4 M X 8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM584100N is a 4M b itx 8 Dynamic RAM high density memory module. The Samsung

IC 74156

Abstract: 74 LS 00 Logic Gates EA45 pin configuration IC 74156 74ls156 ic address decoder 54156DM 54156FM 54LS156DM 74156DC
Contextual Info: 156 CONNECTION DIAGRAM P IN O U T A c 54/74156 54LS/74LS156 7 6 ' n i DUAL 1-O F-4 DECODER/DEMULTIPLEXER E a [T Ü]vcc Ë a |T ii] E b W ith O p e n -C o lle c to r O utputs Ai [7 H ]Ë b Osa 14 m O a a fT Ï71 0 3b Ao O la 77| 02b 00a [ T *To| ölb GND [7

MPD424400V

Abstract: P20V-254-4O0 T777 marking 80L
Contextual Info: NEC MOS INTEGRATED CIRCUIT /¿PD424400-L 4 M BIT DYNAMIC RAM 1 M-WORD BY 4-BIT, FAST PAGE MODE Description The /iPD424400-L is a 1 048 576 words by 4 bits dynamic CMOS RAM. The fast page mode capability realize high speed access and low power consumption.

pin diagram of ic 7470

Abstract: IC Flip-flop 7470 ic dip h 5470 IC 7470 Flip-Flop 7470 IC JK Flip-flop 7470
Contextual Info: 70 CO NNECTIO N DIAGRAMS PINOUT A v 54/7470 n c [T JK EDGE-TRIGGERED FLIP-FLOP Û ] Vcc cd|T Ji [ T DESCRIPTION — The ’70 is a gated in put edge-triggered JK flip -flo p offering Direct Clear and Set inputs, and com plem entary Q and Q outputs. Inform a­

Contextual Info: GD54/74LS92 DIVIDE-BY-TWELVE COUNTER Features • Direct reset input provided • Usable independently as binary and divide-by-six counter Pin Configuration INPUT A NC 0A ° b GNP Qç 14 13 12 11 10 9 Qa ° b NC NC Qp 8 Description This device is composed of independent binary and

CD295D

Abstract: 30X45
Contextual Info: LD FEATURE : 85 10000 Life time:85 10000 hours Wide operating temperature range Ideally suited for switching power supplies , telecommunication and other electronic products SPECIFICATIONS Performance Characteristics Item 160V.DC~450V.DC 10V.DC~100V.DC Rated Working Voltage Range

25X30

Abstract: CD296 capacitor
Contextual Info: LT FEATURE : 105 2000 Life time:105 2000 hours Wide operating temperature range Ideally suited for switching power supplies , telecommunication and other electronic products SPECIFICATIONS Performance Characteristics Item 160V.DC~450V.DC 10V.DC~100V.DC Rated Working Voltage Range

Contextual Info: PART No. H D 1-D 2 A ' MAX. HTSM-M3-L-5-2 M3 5.01.197 1.0 .040) HTSM-M3-L-5.5-2 M3 5.5 (.217) 1.0 (.043) HTSM-M4-L-7-2 M4 7.0 [.276] 1.4 (.055) HTSM-M5-L-8-2 M5 8.0 p i 5) 1.6 (.063) PI P2 ST YLE 2 P3 PART No. D1=D2 H A ' MAX. HTSM-M6-L-9-2 M6 9.0 (355)

105C-120HZ

Contextual Info: /fig m m m m • J M K i a ^ ^ C A S E SIZE TABLE g1‘- D ±1.5 1 1ft-.i 0 90 35 ' so ?'• 76 i L± 3.0 50 60 80 100 80 100 120 100 120 140 100 120 140 150 140 150 12.7 : 31.4 F ±1.0 ' 21.8 31.4 28 2 GH DIMENSIONS, RATED VOLTAGE AN D CAPACITANCE wv v)

Contextual Info: Philips Semlconductors-Signotics Document No. 853-3-0295 ECN No. 94977 Date of issue November 1,1988 Status Product Specification FAST 74F393 Dual 4-Bit Binary Ripple Counter FAST Products EP IC AL ««AX TYPE FEATURES • Two 4-Blt binary counters • Two Master Resets to clear each