LGLQ Search Results

tr8c

Abstract: TMS28F200
Contextual Info: TMS28F20ÛBZT, TMS28F200BZB 262144 BY 8-BIT/131072 BY 16-BIT BOOT-BLOCK FLASH MEMORIES SWS2dOO - JUNE 1 9 9 4 - REVISED SEPTEMBER 1997 • ■ I I I • • • • • • • • • • Organization . . . 262144 by 8 bits 131072 by 16 bits Array-Blocking Architecture

DS3235

Abstract: DS3600 DS3235-1 PNC11 P10C68 P11C68 PNC10C68 PNC11C68
Contextual Info: s» 5 Ë GEC PLESSEY MARCH 1993 PRELIMINARY INFORMATION S E M I C O N D U C T O R S D S 3 6 0 0 - 1 .5 P 1 0 C 6 8 /P 1 1 C 6 8 Previously PNC10C68 and PNC11C68 CMOS/SNOS NVSRAM HIGH PERFORMANCE 8 K x 8 NON-VOLATILE STATIC RAM (Supersedes DS3159-1.3, DS3160-1.3, DS3234-1.1, DS3235-1.1)

AM29F100T

Contextual Info: HNA: AMDB Am29F100 1 Megabit 128 K x 8-bit/64 K x 16-bit CMOS 5.0 Volt-only, Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 5.0 V + 10% for read, erase, and program operations — Simplifies system-level power requirements

T1A16

Abstract: 29LV116
Contextual Info: A M D ÎI Am29LV116B 16 Megabit 2 M x 8-Bit CMOS 3.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications — Regulated voltage range: 3.0 to 3.6 volt read and

Contextual Info: AMD£I Am28F256 256 Kilobit 32 K X 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS • High performance ■ — 70 ns maximum access time ■ CMOS Low power consumption ■ Flasherase Electrical Bulk Chip-Erase — One second typical chip-erase

Am29F010 Rev. A

Contextual Info: AMDZ1 A m 29F 010A 1 Megabit 128 K x 8-blt CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ Embedded Algorithms — 5.0 V ± 10% for read, erase, and program operations — Simplifies system-level power requirements

Contextual Info: FINAL AMD£I Am28F256 256 Kilobit 32 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS • High performance ■ Latch-up protected to 100 mA from -1 V to V c c +1 V ■ Flasherase Electrical Bulk Chip-Erase — 70 ns maximum access time

Contextual Info: in tj 2-MBIT 128K x 16, 256K x 8 BOOT BLOCK FLASH MEMORY FAMILY 28F200BX-T/B, 28F002BX-T/B • x8/x16 Input/Output Architecture — 28F200BX-T, 28F200BX-B — For High Performance and High Integration 16-bit and 32-bit CPUs ■ x8-only Input/Output Architecture

STK10C68

Abstract: STK10C68-M qa1 smd
Contextual Info: STK10C68-M CMOS nvSRAM High Performance 8K x 8 Nonvolatile Static RAM MIL-STD-833/SMD 5962 - 93056 SlfTÌTEH DESCRIPTION FEATURES 35, 45 and 55ns Access Times 15, 20 and 25ns Output Enable Access Unlimited Read and W rite to SRAM Hardware STORE Initiation

intel ab28f200 flash

Abstract: AB28F200 AB28F intel ab28F200
Contextual Info: ADVANCE INFORMATION A28F200BR-T/B 2-MBIT 128K X 16, 256K X 8 SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY Automotive • Intel SmartVoltage Technology — 5V o r 12V Program/Erase — 5V Read Operation ■ Very High Perform ance Read — 80 ns Max. Access Time,

INTEL ES

Abstract: XX96H 297372
Contextual Info: int ! ADVANCE INFORMATION 28F016XS 16-MBIT 1 MBIT x 16, 2 MBIT x 8 SYNCHRONOUS FLASH MEMORY Effective Zero Wait-State Performance up to 33 MHz - Synchronous Pipelined Reads • Backwards-Compatible with 28F008SA Command-Set . 2 pA Typica| Deep Power.Down

Contextual Info: MOTOROLA Order this document by MCM67M618B/D SEMICONDUCTOR TECHNICAL DATA MCM67M618B Advance Information 64K x 18 Bit BurstRAM Synchronous Fast Static RAM With Burst Counter and Self-Timed Write The MCM67M618B is a 1,179,648 bit synchronous static random access

Contextual Info: MOTOROLA Order this document by MCM6926/D SEMICONDUCTOR TECHNICAL DATA MCM6926 Product Preview 128K x 8 Bit Fast Static Random Access Memory WJ PACKAGE 400 MIL SOJ Ci CASE 857A-02 The MCM6926 is a 1,048,576 bit static random access memory organized as 131,072 words of 8 bits. This device is fabricated using high performance silicon—

Contextual Info: SONY CXK77B3640GB 4A/4/45A/45 4Mb Late Write HSTL High Speed Synchronous SRAM 128K x 36 Organization Description T he C X K 77B 3640 is a high speed BiCM O S synchronous static R A M w ith com m on I/O pins, organized as 131,072-w ords by 36-bits. This synchronous SR A M integrates input registers, high speed R A M , output registers/latches, and a one-deep write

514256a

Abstract: MCM514256AZ10 MCM514256AP70 MCM514256APC80 MCM514256A-10 514256A-70 MCM51L4256A-70 MCM514256A-80 MCM514256AJ80 MCM514256AZ80
Contextual Info: i O rder this docum ent by M CM 514256A/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM514256A MCM51L4256A 256Kx4 CMOS Dynamic RAM Page Mode, Commercial and Industrial Temperature Range The MCM514256A is a 1,0|x CMOS high-speed, dynamic random access memory. It is organized as 262,144 four-bit words and fabricated with CMOS

CXK77B3640GB

Abstract: SA12 SA13 SA14 SA15 SA16
Contextual Info: SONY CXK77B3640GB 4A/4/45A/45 4Mb Late Write HSTL High Speed Synchronous SRAM 128K x 36 Organization Description T he C X K 77B 3640 is a high speed BiCM O S synchronous static R A M w ith com m on I/O pins, organized as 131,072-w ords by 36-bits. This synchronous SRA M integrates input registers, high speed R A M , output registers/latches, and a one-deep write

MCm6290P15

Abstract: mcm6290j15 mcm6290p MCM6288-15 MCM6290J 22A1221
Contextual Info: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA MCM6288-15 MCM6290-15 Product Preview 1 6 K x 4 Bit Static RA M s P PACKAGE PLASTIC CASE 738A The MCM6288-15 and MCM6290-15 are 66,536 bit static random access memories orga­ nized as 16,384 words o f 4 tries, fabricated using Motorola's high-performance sffloon-gate

ic 8022

Contextual Info: M O TO RO LA SEM ICO ND U C TO R TECHNICAL DATA MCM4180 4K x 4 Bit Cache Address Tag Comparator The M C M 4 1 8 0 is a 16.384 bit c a c h e a d d re s s tag c o m p a ra to r o rg a n iz e d as 4096 tags of 4 bits, fa b ric a te d u sing M o to ro la 's h ig h -p e rfo rm a n c e s ilic o n -g a te C M O S tech

MCM6265

Contextual Info: MOTOROLA SEM ICO ND U C TO R TECHNICAL DATA MCM6265C Advance Information 8K x 9 Bit Fast Static RAM The MCM6265C is fabricated using Motorola’s high-performance silicon-gate CMOS technology. Static design eliminates the need for external clocks or tim ­

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 128K x 8 Bit Static Random Access Memory MCM6226B WJ PACKAGE 400 MIL SOJ CASE 857A-02 The M C M 6226B is a 1,048,576 bit static random a ccess me mory organized as 131,072 w ords of 8 bits, fabricated using h ig h -p e rfo rm a n :e s iiic o n -g a te

Contextual Info: M O TO RO LA SEM ICO NDUCTO R TECHNICAL DATA MCM62983 Advance Information 64K x 4 Bit Fast Synchronous ParityRAM with Output Registers The MCM62983 is a 262,144 bit synchronous static random access memory organized as 65,536 words of 4 bits, fabricated using Motorola's high-performance

1A14A

Abstract: T28F200 28F400-T
Contextual Info: in te l PRELIMINARY 4-MBIT 256K X 16, 512K X 8 SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 28 F 4 0 0 B V -T /B , 28 F 4 0 0 C V -T /B , 2 8 F 0 0 4 B V -T /B 2 8 F 4 0 0 C E -T /B , 2 8 F 0 0 4 B E -T /B Intel SmartVoltage Technology — 5V or 12V Program/Erase

29057

Abstract: intel 4269
Contextual Info: 28F002BC 2-MBIT 256K X 8 BOOT BLOCK FLASH MEMORY • High Performance Read — 80/120 ns Max. Access Time 40 ns Max. Output Enable Time a Low Power Consumption — 20 mA Typical Read Current ■ x8-Only Input/Output Architecture — Space-Constrained 8-bit

Contextual Info: ADVANCE 25 6 K x 1 8 / 1 2 8K x 36 3. 3V V dd , H S T L , P I P E L I N E D C L A Y M O R E S R A M MICRON U TECHNOLOGY, INC. MT57L256H18P MT57L128H36P 4.5Mb C L A Y M O R E SRAM FEATURES Fast cycle tim es: 4.4ns, 5ns, 5.5n s, 6ns and 7ns * 256K x 18 and 128K x 36 con fig u ration s