LG 42 T Search Results

Ti3C

Abstract: GMM7322000AN
Contextual Info: @ LG Semicon. Co. LTD. Description Features The GMM7322000ANS/SG is an 1M x 32 bits Dynamic RAM MODULE which is assembled 4 pieces of 1M x 16bit DRAMs in 42 pin SOJ package on single sides the printed circuit board with decoupling capacitors. The GMM7322000ANS/SG is

GMM7321000AN

Contextual Info: _ ü _ LG Semicon. Co. LTD Description Features The GMM7321000ANS/SG is an 1M x 32 bits Dynamic RAM MODULE which is assembled 2 pieces of 1M x 16bit DRAMs in 42 pin SOJ package on single sides the printed circuit board with decoupling capacitors. The GMM7321000ANS/SG is

Contextual Info: @ LG Semicon. Co. LTD Features Description The GMM7322200BNS/SG is an 2M x 32 bits Dynamic RAM MODULE which is assembled 4 pieces of 1M x 16bit DRAMs in 42 pin SOJ package on single sides the printed circuit board w ith decoupling capacitors. The GMM7322200BNS/SG is

GMM7321000AN

Contextual Info: _ ü _ LG Semicon. Co. LTD Description Features The GMM7321000ANS/SG is an 1M x 32 bits Dynamic RAM MODULE which is assembled 2 pieces of 1M x 16bit DRAMs in 42 pin SOJ package on single sides the printed circuit board with decoupling capacitors. The GMM7321000ANS/SG is

Contextual Info: @ LG Semicon. Co. LTD Description Features The GMM7321200ANS/SG is an 1M x 32 bits Dynamic RAM MODULE w hich is assembled 2 pieces of 1M x 16bit DRAMs in 42 pin SOJ package on single sides the p rin te d c irc u it board w ith d e co u p lin g capacitors. The GMM7321200ANS/SG is

GMM7322000BN

Contextual Info: @ LG Semicon. Co. LTD Description Features The GMM7322000BNS/SG is an 2M x 32 bits Dynamic RAM MODULE w hich is assembled 4 pieces of 1M x 16bit DRAMs in 42 pin SOJ package on single sides the p rin te d c irc u it board w ith d e co u p lin g capacitors. The GMM7322000BNS/SG is

GMM7321000B

Contextual Info: @ LG Semicon. Co. LTD. Description Features The GMM7321000BNS/SG is an 1M x 32 bits Dynamic RAM MODULE w hich is assembled 2 pieces of 1M x 16bit DRAMs in 42 pin SOJ package on single sides the p rin te d c irc u it board w ith d eco u p lin g capacitors. The GMM7321000BNS/SG is

Contextual Info: @ LG Semicon. Co. LTD. Description Features The GMM7321200BNS/SG is an 1M x 32 bits Dynamic RAM MODULE w hich is assembled 2 pieces of 1M x 16bit DRAMs in 42 pin SOJ package on single sides the p rin te d c irc u it board w ith d e co u p lin g capacitors. The GMM7321200BNS/SG is

lg 6154

Abstract: KTY 10-8 DL1416 KTY 20-5 DL440 O62902-B156-F222 Q62901-B64
Contextual Info: Alphanumerische Bestellnummern Q-Nummern Alphanumeric Ordering Codes (Q numbers) Achtung: NeueTypenbezeichnungen bei Si-Fotodetektoren und Lichtwellenleitern Attention: New type designations for Si-Photodetectors and Fiber-Optic Systems Bestellnummer lyp

SFH 255 FA

Abstract: LR 2703 LY3360K dl340m FP310L100-75 Q68000-A8452
Contextual Info: AlphanumerischesTypenverzeichnis Alphanumeric Type Index Achtung: NeueTypenbezeichnungen bei Si-Fotodetektoren und Lichtwellenleitern Attention: New type designations for Si-Photodetectors and Fiber-Optic Systems type Bestellnummer Seite Type Bestellnummer Seite

THHN WIRE 12 AWG

Abstract: 820V 65kA TB1-65220-1G-40 AWG THHN TB1 225 sanden automatic voltage regulators Lg "Noise Filter"
Contextual Info: TB1 Series-Transient Voltage Surge Suppressors Series-connected Design Terminal Board/Series-connected Suppression Filter System The TB1 Series STABILINE Transient Voltage Surge Suppressor is engineered for hard-wired installation within or adjacent to electrical loads such as programmable logic controllers,

Roederstein EK

Abstract: Roederstein EKm roederstein capacitor ek series Roederstein EG Din 41253 Roederstein EGD EGD Roederstein 41253 ROEderstein EG capacitor EKM capacitors
Contextual Info: ROEDERSTEIN ELECTRONICS 23 E D 7Ô21&EM D0D1SQQ T Roederstein :i -, 4 -ÛÎ-/I - 0 Electrolytic Capacitors Special Style for Vertical Mounting, Polarized, Etched Anodes, DIN 41253 and DIN 45910, Part 1210 2 EGD Electric values: DIN 41332 DIN 41253 pertinent style standard

Contextual Info: 20~}0 5363+;<9/ 2312 87>/9 9/4+? 0C@MNKCL T 64A koal[`af_ [YhYZadalq Fad] Mg2>E5778<5 T 9cU \a]d][lja[ klj]f_l` .Z]lo]]f [gad Yf\ [gflY[lk/ T 54cU aehmdk] oal`klYf\ ngdlY_] .Z]lo]]f [gad Yf\ [gflY[lk/ Fad] Mg2>Q9458;4<: T [j]]hY_] \aklYf[]> <ee T OCB - PC dYqgmlk YnYadYZd]

Contextual Info: 3 mm T1 LED, Non Diffused Lead (Pb) Free Product - RoHS Compliant LS 3340, LO 3340, LY 3340, LG 3330, LP 3340 Nicht für Neuentwicklungen Not for new designs Besondere Merkmale Features • Gehäusetyp: eingefärbtes, klares 3 mm (T1) Gehäuse • Besonderheit des Bauteils: Lötspieße mit

yl 202 h

Abstract: bc 324 907e TT 93 N LO U208
Contextual Info: 20:| 31,; 57.<4/ 0C?MNKCL V Jgo \jan] hgo]j V Jgo TAC,kYlV Gkgdml]\ ZYk]hdYl] ^gj ]Ykq `]Yl kafcaf_ V PgFQ [gehdaYfl ;PJEA?F +JJFEA?MEIHL ?A eglgj [gfljgd. SNQ. U]d\af_ hgo]j kmhhda]k ./:-938;376 FDQ44 GE@R eg\md]k Yj] \]ka_f]\ mk] af koal[`af_ Yhhda[Ylagfk0 CY[` eg\md] [gfkaklk g^ log GE@Rk af Y `Yd^ Zja\_] [gf^a_mjYlagf0

LA 4289

Abstract: LM 7526 LA4-DE HQM584450 alq-184
Contextual Info: 0.{|. 8:*3141~9:7- 149-73-,1~9- 65<-7 7-2~= .B?LMJBK Ead] Lg2>D5778<5 T 9@ koal[`af_ [YhYZadalq T 5 Egje @ Yf\ 5 Egje B T QlYf\Yj\ Yf\ k]fkalan] [gadk YnYadYZd] T UYk` la_`l Yf\ ^dmp hjgg^]\ lqh]k YnYadYZd] Ead] Lg2>P945;6784 T Dfnajgfe]flYd ^ja]f\dq hjg\m[l .PgGQ [gehdaYfl/

Q65110A2804

Abstract: Q65110A2803 3340-L1M2-1 3340-LM-24 3340-MN-24 osram lg 3330 3340-L Q65110A0747
Contextual Info: 3 mm T1 LED, Non Diffused LS 3340, LO 3340, LY 3340, LG 3330, LP 3340 Besondere Merkmale Features • Gehäusetyp: eingefärbtes, klares 3 mm (T1) Gehäuse • Besonderheit des Bauteils: Lötspieße mit Aufsetzebene • Wellenlänge: 628 nm (super-rot),

roederstein EGC

Abstract: din 41240 Roederstein Ebc
Contextual Info: ROEDERSTEIN ELECTRONICS 23E D 7fl21L24 ODDlEHb 1 Roederstein Electrolytic Capacitors for High Requirements, Special Style for Vertical Mounting, Polarized, Etched Electrodes, Pulse-Proof, in Acc. with DIN 41267 and DIN 45910, Part 1211 EBCD EGCD Electrolytic capacitors with long service life and high operational reliability. Temperature range - 4 0 . 105°C. Complies with

Contextual Info: SEMiX 202GB128D Absolute Maximum Ratings Symbol Conditions IGBT  0 056 8 ":.     SEMiXTM 2 SPT IGBT Modules SEMiX 202GB128D Target Data Features                  ! "  !     

SU19

Contextual Info: 31~*1 ;=-6474,<=:0 47<0:60/4,<0 98?0: :05,@ 1EBPQNEO Y 54A koal[`af_ [YhYZadalq Fad] Mg2>E57895; Y SU19 569UAC Yhhjgn]\ Zq TK klYf\Yj\ .gfdq ^gj 5 Fgje A/ Y VYk` la_`l Yf\ ^dmp hjgg^]\ lqh]k YnYadYZd] Fad] Mg2>Q9459:696 Y 5 Fgje A Yf\ 5 Fgje C [gf^a_mjYlagfk

BS 4752 MCCB

Abstract: digitrip 310 time curve KEMA keur type 900 kema keur 60947-2 SWITCH KEMA keur t 85 12NES1200T Eaton DIGITRIP 3000 seltronic breaker Cutler-Hammer Digitrip RMS 310 rating plug EOP5T07
Contextual Info: Series G Molded Case Circuit Breakers 15 – 2500 Amperes for UL, CSA & IEC Applications July 2004 Frame Sizes EG through RG 15 – 2500 Amperes Vol. 1, Ref. No. [01] Description Page Standards Standards . . . . . . . . . . . . . . . . General Information . . . . . . . .

569T

Abstract: GE-59 GE59
Contextual Info: 20|~}0 ;=,5363+<=:/ 2312 87?/: :/4+@ 0EBOPMEN V V V V V V V V V V Ead] Lg2> D57895; Ead] Lg2> 8445;<7; -76<+-< .+<+ -734 BgflY[l YjjYf_]e]fl 5@ 5B BgflY[l j]kaklYf[] 544e .Yl 5@ 68TCB/ BgflY[l eYl]jaYd @_La0 @_QfM6 64@ 569T@B 5;@ 6;T@B ;@ 844T@B LM> ;@ 844T@B

ges rg 58

Contextual Info: SEMiX 202GB128D Absolute Maximum Ratings Symbol Conditions IGBT  0 056 8 ":.     SEMiX 2 SPT IGBT Modules SEMiX 202GB128D Target Data Features                  ! "  !     

Contextual Info: @ LG Semicon. Co. LTD. Description Features The GM71V16160A is the new generation dynamic RAM organized 1,048,576 words x 16 bits. GM71V16160A has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology.