LET9006 Search Results

LET9006 Datasheets (1)

Filter by Manufacturer

STMicroelectronics

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
LET9006		STMicroelectronics	RF Power Transistor	Original	PDF	40.35KB	4

LET9006 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: LET9006 RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 6 W with 17 dB gain @ 960 MHz / 26V • NEW LEADLESS PLASTIC PACKAGE	Original	LET9006 LET9006	PDF
LET9006 Contextual Info: LET9006 RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 6 W with 17 dB gain @ 960 MHz / 26V • NEW LEADLESS PLASTIC PACKAGE	Original	LET9006 LET9006	PDF
LET9006 Abstract: SMD MARKING GP TRANSISTOR JESD97 transistor smd marking LE Contextual Info: LET9006 RF Power Transistors Ldmos Enhanced Technology in Plastic Package TARGET DATA General Features • EXCELLENT THERMAL STABILITY ■ COMMON SOURCE CONFIGURATION ■ POUT =6W WITH 17 dB GAIN @ 960 MHz / 26V ■ NEW LEADLESS PLASTIC PACKAGE ■ ESD PROTECTION	Original	LET9006 2002/93/EC LET9006 SMD MARKING GP TRANSISTOR JESD97 transistor smd marking LE	PDF
Contextual Info: LET9006 RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 6 W with 17 dB gain @ 960 MHz / 26V • NEW LEADLESS PLASTIC PACKAGE	Original	LET9006 LET9006	PDF