LEM LT 300 - T Search Results

thyristors 5000 volt 3000 amperes

Abstract: Lem LT 300 - t CODE 1AM powerex T9G T9G0 Lem LT 300
Contextual Info: P0U1EREX INC m u o D5 a x DE 1 7 5 c14bEl QD03DSb S _ T - 2 S *2 tf T9G0 Pow erex, Inc. Hlllls Street, Youngwood, Pennsylvania 15897 412 925 -7 2 7 2 Phase Control SCR P o w e re x Europe, S.A., 4 28 Ave. Q. Durand, BP107, 72003 LeM ana, France (43 ) 72.75.1S

MPY16HJ

Abstract: MPY-16HJ WTL1016 weitek 1516B MSP 3140 64 bit booth multiplier trw 1016 "Pin for Pin"
Contextual Info: .-I H y.- r ^L/rrL^ 7 IN N O V A T IO N S IN M I C R O S Y S T E M T E C H N O L O G Y 0 3b j ^ f A ' WTL 1516/1516A/1516B Features Description • 16 X 16 p arallel a rra y m ultip lier T h e W T L 1516/1516A/1516B are N M O S 16 X 16 p arallel arra y, m ultipliers characterized

LEM LT 308

Abstract: Lem LT 300 LT308-T7 Lem LT 500 t7 308
Contextual Info: 电流传感器 LT 308-T7 IPN = 原边和副边之间是绝缘的，用于测量直流 300 A 交流和脉冲电流 。 电参数 性能 原边额定有效值电流 原边电流， 测量范围 测量电阻 @ IPN IP RM with ± 12 V with ± 15 V 精度 L • 应用霍尔原理的闭环（补偿）电流传感

2322 m

Abstract: Lem LT 300 - t lem lt 100 p
Contextual Info: M odel PP- 17 Modular C o n tro l P otentio m eter SPECIFICATIONS Carbon Composition Element Cermet Element Electrical Resistance Range Linear 220 i i to 2.2 M il 220 i l to 2.2 M i N on Linear 2.2 KJ1 to 470 K ii N ot Applicable Resistance Tolerance ± 20% Standard

LTSR 6-NP

Abstract: LTSR 25-NP ch-1228 nanalem lem lt 100 p LTS 25-NP hall current transducer lts 6-np LEM hall effect sensor voltage offset cancellation LTSR 15-NP LA 25-NP
Contextual Info: Technical Information LTSR: ASIC Based Closed-Loop Transducers from 6 A up to 25 A nominal with reference access LTSR: ASIC Based Closed-Loop Transducers from 6 A up to 25 A nominal with reference access. By Stéphane Rollier, Christophe Benz & Hans Dieter Huber.

ssi 202

Abstract: HER301 HER308 Z03E
Contextual Info: E HER301 -HER308 TAIWAN SEMICONDUC tà RoHS CO M PLIANCE 3.0 AMPS. High Efficient Rectifiers DQ.-2Q1AD .220 lÿ.lil .TTiTFiïï Dia. 1.0 2S.4 MIN. Features v •fr <> v v High efficie ncy. Low VF High current caps bilily High reliability High surgu currunl capability

Lem LT 300 - t

Abstract: noble 15am
Contextual Info: I Multi-Section Potentiometer for Car-Audio XVB93 Series 7 .0 5 s p z c iw c & T io m 15 •íotalfiotalinnalJUigíB:- 300 ± 5 ° S in gle -E le m e nt Single S h a ft Type : 2 to 15 m N m :Bofafionaf:t-orque:- D ual-S haft lnner T ype : 2 to 15 mN m

Lem LT 300 - t

Abstract: NDL5200 L5104
Contextual Info: N E C h2E D ELECTRONICS INC • b427525 0030074 22T M N E C E PRELIMINARY DATA SHEET NEC PHOTO DIODE NDL5103P, NDL5103P1 ELECTRON DEVICE 1 300 nm OPTICAL FIBER COM M UNICATIONS <t>50 G ERM AN IU M A V A LA N CH E PHOTO DIODE M O DULE DESCRIPTION NDL5103P and NDL5103P1 are Germanium Avalanche Photo Diodes with optical fiber, especially designed for detectors of

Contextual Info: IMX1 /Transistors I M X 1 7 < 7 1 / - T 7 K ^ - ;E - ^ K t / H 7 —fix/H f ^ * a lflIffl/G eneral Small Signal Amp. Isolated Mini-Mold Device • • ^. g-^->i@ /Dim ensions U n it: mm) 1) SMT (SC-59) t m — f t t H c 2 f@(7) h 7 > - > ' X 5 i ! A o Zi'&o

tube 6c4

Abstract: 6c4 tube TRIODE 6C4 TL604 I960 rs tube general electric
Contextual Info: jam 6C4 6C4 ET-T1604 Page 1 3-6 0 TRIODE TUBES DESCRIPTION A N D RAT IN G 1 BASING DIAG RAM T h e 6 C 4 is a m in ia tu re , m e d iu m -m u trio d e su ita b le fo r use in a w id e v a r ie t y o f g e n e ra l-p u rp o se a p p lica tio n s. I t is e sp e c ia lly u se fu l a s a lo ca l o scilla to r in

Lem LT 300 - t

Contextual Info: ANALOG DEVICES FEATURES 60 MHz Pulse Rate 8-Bit Resolution Center, Left or Right Justify Low Power: 700 m W typical M inim um Pulse W idth: <5 ns M axim um PW: 100 % Full-scale Pulse Width Modulator AD9561 FUNCTIONAL BLOCK DIAGRAM APPLICATIONS Laser Printers

2N6218

Abstract: 2N6115 2N6114 GES621I Voltaire unijunction
Contextual Info: Silicon Complementary Unijunction Transistor 2 N 6 2 1 8 -2 4 SEE G ES621I*2 COMPLEMENTARY UNIJUNCTION T he G eneral E le c tr ic C om p lem en tary U n iju n ctio n T ra n sisto r is a silicon planar, m on olith ic in teg ra ted circu it. It h as u n iju n ction c h a r a c te r istic s w ith

LT8900

Abstract: itt 2222a LT89000 2203a ses cree 3535 PS-303 AD clt850 LT8600 2168A LT8500
Contextual Info: Æ | M IT - L I f 1 w II CLA80000 SERIES I Km*Ink HIGH DENSITY CMOS GATE ARRAYS SEMICONDUCTOR DS3820-2.1 July 1997 INTRODUCTION ARRAY SIZES T he C L A 8 0 k gate array se rie s from M itel S e m ico n d u cto r offers advan ta ge s in spe ed and d e n sity over previous array

LTE Receiver

Contextual Info: CY7B4663 Integrated 10BASE-FL Ethernet Transceiver Features F unctional Description Single chip Ethern et solution C om plie s with IEEE 802.3 10BAS E-FL standard Pin com patible with the popular 4663 110 mA LED current drive capability AUI interface allows both transform er and capacitive

LT308-S7

Abstract: LEM LT 308 S7 Lem LT 300 - t Lem LT 300 308-S7 LEM LT 308 lem lt 2000 LT308-S
Contextual Info: 电 流 传 感 器 LT 308-S7 IPN = 原边和副边之间是绝缘的 ，用于测量直流 300 A 交流和脉冲电流 。 电参数 性能 原边额定有效值电流 原边电流， 测量范围 测量电阻 @ IPN IP RM with ± 12 V with ± 15 V 精度

Lem LT 300

Abstract: LT308-S6 308-S6 LEM LT 308 LT308-S
Contextual Info: 电流传感器 LT 308-S6 原边和副边之间是绝缘的，用于测量直流 IPN = 300 A 交流和脉冲电流 。 电参数 性能 原边额定有效值电流 原边电流， 测量范围 测量电阻 @ IPN IP RM 300 0 . ± 500 with ± 18 V 精度

tone decoder ne567

Abstract: NE567N NE567 u3 ne567 wireless intercom ne567 applications INTERCOM NE567 NE567T NE-567N Signetics NE567
Contextual Info: S ig n e tics Integrated Circuits - Phase Locked Loop NE567 — Tone Decoder/ Phase Locked Loop C O N N E C T IO N D IA G R A M N PACKAGE G E N E R A L DE SC R IPTIO N The S E /N E 567 to n e and frequency decoder is a h igh ly stable phase-locked loop w ith synchronous A M lock dete c tio n and

2N2586

Abstract: transistor KC 2
Contextual Info: TYPE 2N2S86 N-P-N SILICON TRANSISTOR B U L L E T I N N O . D L -S 6 5 2 9 8 7 , A U G U S T 1 9 6 2 - R E V I S E D S E P T E M B E R 1 9 6 5 FO R E X T R E M E L Y L O W -L E V E L , LOW -N O ISE, A M P L IF IE R A P P LIC A T IO N S • Guaranteed Very-Low-Current hp E •• ■80 min at 1 ¿uA

GDM207

Contextual Info: 22307=12 O D Ü M m T2b • ‘ S P E C I F I C A T I ON DEVICE NAME : TYPE NAME : SPEC. No. : I GBT 1M B H 2 0 D - 0 6 0 M S5F3686 M I _ :_ Jun. -25-1996 F uj i E l e c t r i c Co., Ltd. This Specification is subject to change without notice.

LT208-S7

Abstract: Lem LT 200 Lem LT 300 - t LT208 Lem LT 300 208-S7 Lem LT 500 Lem LT 208
Contextual Info: 电 流 传 感 器 LT 208-S7 IPN = 原边和副边之间是绝缘的 ，用于测量直流 200 A 交流和脉冲电流 。 电参数 性能 原边额定有效值电流 原边电流， 测量范围 测量电阻 @ IPN IP RM with ± 12 V with ± 15 V 精度

ERC20

Abstract: ERC20-02 T151 T760 T0220A
Contextual Info: E R C 2 5 A FAST RECOVERY DIODE • 4# ^ : Features High voltage by mesa design. • « fia t* High reliability Connection Diagram : Applications • M & X 'f- y T *? High speed switching. Maximum Ratings and Characteristics : Absolute Maximum Ratings Items

J00093A0006

Abstract: J00093A0002 J00091A0007 RJ45B RJ45-B J00093A0009
Contextual Info: Open Cabling System OCS Open Cabling System® OCS 1. S y s t e m ü b e r s ic h t S y ste m s u rv e y In d e r N e tz w e r k v e r k a b e lu n g h a b e n sich d ie n s te - u n d h e r s te lle r n e u tr a le V e rk a b e lu n g s s y s te m e n ac h ISO /IEC 11801

Contextual Info: SC11313/SC11314 Programmable Sinewave/Squarewave Generator 'V ' SIERRA SEMICONDUCTOR □ □ □ □ P ro g ra m m in g freq u en cy from D C to 3 .5 K H z w ith ±0.1 dB am p litu d e a tten u a tio n G a in e rro r— ± 1 .0 d B H arm o n ic d isto rtio n — 45 dB

potentiometer 50k ohm J

Abstract: MIL-R-12934 3535S-1-102 bourns potentiometer 50k trimpot MIL-E-5272 3535S-1-103 3535S-1-502
Contextual Info: PRECISION POTENTIOMETER M odel 3 5 3 5 B O U R N S P o te n tio m e te r %" D ia m e te r S in g le-T u rn , B ushing M o u n t Wi rew ound E lem en t FEATURES E xtended te m p e ra tu re range: — 65° to + 1 2 5 ° C O u tstanding resistance to h um id ity