LEM LT 300 - T Search Results

thyristors 5000 volt 3000 amperes

Abstract: Lem LT 300 - t CODE 1AM powerex T9G T9G0 Lem LT 300
Contextual Info: P0U1EREX INC m u o D5 a x DE 1 7 5 c14bEl QD03DSb S _ T - 2 S *2 tf T9G0 Pow erex, Inc. Hlllls Street, Youngwood, Pennsylvania 15897 412 925 -7 2 7 2 Phase Control SCR P o w e re x Europe, S.A., 4 28 Ave. Q. Durand, BP107, 72003 LeM ana, France (43 ) 72.75.1S

MPY16HJ

Abstract: MPY-16HJ WTL1016 weitek 1516B MSP 3140 64 bit booth multiplier trw 1016 "Pin for Pin"
Contextual Info: .-I H y.- r ^L/rrL^ 7 IN N O V A T IO N S IN M I C R O S Y S T E M T E C H N O L O G Y 0 3b j ^ f A ' WTL 1516/1516A/1516B Features Description • 16 X 16 p arallel a rra y m ultip lier T h e W T L 1516/1516A/1516B are N M O S 16 X 16 p arallel arra y, m ultipliers characterized

LEM LT 308

Abstract: Lem LT 300 LT308-T7 Lem LT 500 t7 308
Contextual Info: 电流传感器 LT 308-T7 IPN = 原边和副边之间是绝缘的，用于测量直流 300 A 交流和脉冲电流 。 电参数 性能 原边额定有效值电流 原边电流， 测量范围 测量电阻 @ IPN IP RM with ± 12 V with ± 15 V 精度 L • 应用霍尔原理的闭环（补偿）电流传感

2322 m

Abstract: Lem LT 300 - t lem lt 100 p
Contextual Info: M odel PP- 17 Modular C o n tro l P otentio m eter SPECIFICATIONS Carbon Composition Element Cermet Element Electrical Resistance Range Linear 220 i i to 2.2 M il 220 i l to 2.2 M i N on Linear 2.2 KJ1 to 470 K ii N ot Applicable Resistance Tolerance ± 20% Standard

Contextual Info: IMX1 /Transistors I M X 1 7 < 7 1 / - T 7 K ^ - ;E - ^ K t / H 7 —fix/H f ^ * a lflIffl/G eneral Small Signal Amp. Isolated Mini-Mold Device • • ^. g-^->i@ /Dim ensions U n it: mm) 1) SMT (SC-59) t m — f t t H c 2 f@(7) h 7 > - > ' X 5 i ! A o Zi'&o

tube 6c4

Abstract: 6c4 tube TRIODE 6C4 TL604 I960 rs tube general electric
Contextual Info: jam 6C4 6C4 ET-T1604 Page 1 3-6 0 TRIODE TUBES DESCRIPTION A N D RAT IN G 1 BASING DIAG RAM T h e 6 C 4 is a m in ia tu re , m e d iu m -m u trio d e su ita b le fo r use in a w id e v a r ie t y o f g e n e ra l-p u rp o se a p p lica tio n s. I t is e sp e c ia lly u se fu l a s a lo ca l o scilla to r in

Lem LT 300 - t

Contextual Info: ANALOG DEVICES FEATURES 60 MHz Pulse Rate 8-Bit Resolution Center, Left or Right Justify Low Power: 700 m W typical M inim um Pulse W idth: <5 ns M axim um PW: 100 % Full-scale Pulse Width Modulator AD9561 FUNCTIONAL BLOCK DIAGRAM APPLICATIONS Laser Printers

2N6218

Abstract: 2N6115 2N6114 GES621I Voltaire unijunction
Contextual Info: Silicon Complementary Unijunction Transistor 2 N 6 2 1 8 -2 4 SEE G ES621I*2 COMPLEMENTARY UNIJUNCTION T he G eneral E le c tr ic C om p lem en tary U n iju n ctio n T ra n sisto r is a silicon planar, m on olith ic in teg ra ted circu it. It h as u n iju n ction c h a r a c te r istic s w ith

LT8900

Abstract: itt 2222a LT89000 2203a ses cree 3535 PS-303 AD clt850 LT8600 2168A LT8500
Contextual Info: Æ | M IT - L I f 1 w II CLA80000 SERIES I Km*Ink HIGH DENSITY CMOS GATE ARRAYS SEMICONDUCTOR DS3820-2.1 July 1997 INTRODUCTION ARRAY SIZES T he C L A 8 0 k gate array se rie s from M itel S e m ico n d u cto r offers advan ta ge s in spe ed and d e n sity over previous array

LTE Receiver

Contextual Info: CY7B4663 Integrated 10BASE-FL Ethernet Transceiver Features F unctional Description Single chip Ethern et solution C om plie s with IEEE 802.3 10BAS E-FL standard Pin com patible with the popular 4663 110 mA LED current drive capability AUI interface allows both transform er and capacitive

4N50

Abstract: IRF830 irf4321 MTP4N45 IRF430 IRF 5054 MTP4N50 MTM4N50 MK48Z02B-20 IRF431
Contextual Info: FAIRCHILD SEMICONDUCTOR A4 DE I 34L.TL7L} D O a ? i n IRF430-433/IRF830-833 M TM /M TP4N45/4N50 N-Channel Power MOSFETs, 4.5 A, 450 V /500 V FA IR C H ILD B H O H B H B A Schlumberger Company Power And Discrete Division Description T—39—11 TO-204AA TO-22QAB

LT308-S7

Abstract: LEM LT 308 S7 Lem LT 300 - t Lem LT 300 308-S7 LEM LT 308 lem lt 2000 LT308-S
Contextual Info: 电 流 传 感 器 LT 308-S7 IPN = 原边和副边之间是绝缘的 ，用于测量直流 300 A 交流和脉冲电流 。 电参数 性能 原边额定有效值电流 原边电流， 测量范围 测量电阻 @ IPN IP RM with ± 12 V with ± 15 V 精度

Lem LT 300

Abstract: LT308-S6 308-S6 LEM LT 308 LT308-S
Contextual Info: 电流传感器 LT 308-S6 原边和副边之间是绝缘的，用于测量直流 IPN = 300 A 交流和脉冲电流 。 电参数 性能 原边额定有效值电流 原边电流， 测量范围 测量电阻 @ IPN IP RM 300 0 . ± 500 with ± 18 V 精度

tone decoder ne567

Abstract: NE567N NE567 u3 ne567 wireless intercom ne567 applications INTERCOM NE567 NE567T NE-567N Signetics NE567
Contextual Info: S ig n e tics Integrated Circuits - Phase Locked Loop NE567 — Tone Decoder/ Phase Locked Loop C O N N E C T IO N D IA G R A M N PACKAGE G E N E R A L DE SC R IPTIO N The S E /N E 567 to n e and frequency decoder is a h igh ly stable phase-locked loop w ith synchronous A M lock dete c tio n and

GDM207

Contextual Info: 22307=12 O D Ü M m T2b • ‘ S P E C I F I C A T I ON DEVICE NAME : TYPE NAME : SPEC. No. : I GBT 1M B H 2 0 D - 0 6 0 M S5F3686 M I _ :_ Jun. -25-1996 F uj i E l e c t r i c Co., Ltd. This Specification is subject to change without notice.

ERC20

Abstract: ERC20-02 T151 T760 T0220A
Contextual Info: E R C 2 5 A FAST RECOVERY DIODE • 4# ^ : Features High voltage by mesa design. • « fia t* High reliability Connection Diagram : Applications • M & X 'f- y T *? High speed switching. Maximum Ratings and Characteristics : Absolute Maximum Ratings Items

Contextual Info: SC11313/SC11314 Programmable Sinewave/Squarewave Generator 'V ' SIERRA SEMICONDUCTOR □ □ □ □ P ro g ra m m in g freq u en cy from D C to 3 .5 K H z w ith ±0.1 dB am p litu d e a tten u a tio n G a in e rro r— ± 1 .0 d B H arm o n ic d isto rtio n — 45 dB

BCs56

Abstract: BC857Ser BC85 BC856 BC857 BC858 BC859
Contextual Info: BC856A/B-BC ’857A/B BC858A/R/C-BC859B/C G en eral P urpose t ran sisto r P N P Silicon < o iim o « c ; d i \< ; k \ 3 m v k m m — m □ 2 XX - r>«tic# C o ó t S ee S O I2 J H T >MI I I > K R ating Loiiector-E m itter Voltage BC856 Symbol Nuhic VCE0

TMS320F240

Abstract: TMS320F240 motor ir2130 induction motor matlab svpwm induction heating IR2130 APPLICATION NOTE MCK240 Park transformation clarke transformation ic 4017 PIN DIAGRAM
Contextual Info: Implementation of a Speed Field Orientated Control of Three Phase AC Induction Motor using TMS320F240 Literature Number: BPRA076 Texas Instruments Europe March 1998 IMPORTANT NOTICE Texas Instruments and its subsidiaries TI reserve the right to make changes to their products or to discontinue

lem 732 733

Abstract: lem 731 IRF3303 lem 733 1rf730 IRF330-333 5N40 MTP5N35 733 331 lem* 731
Contextual Info: FAIRCHILD SEMICONDUCTOR A4 DE I 34b‘ïb74 0 0 5 7 0 ^ □ IRF330-333/IRF730-733 M TM /M TP5N35/5N40 N-Channel Power M O SF ET s, 5.5 A, 350 V/400 V FAIRCHILD A Schlumberger Company Power And Discrete Division — Description TO-204AA TO-220AB IRF330 IRF331

6BQ5

Abstract: 6BQ5 triode 6BQ5 tube resistor 270 ohm GR10 I960 tube 6BQ5 pentode VT 42
Contextual Info: T E N T A T IV E DATA 6BQ5 TUII6-S0L PENTODE 1 f COATED UN I PO T E N T IA L CATHODE 2 « MAX T-6i HEATER MAX 6 . 3 VOLT S 0 . 7 6 AMP. ANY MOUNTING P O S I T I O N BOTTOM VIEW MAX 9 GLASS BULB P IN BASE 9 C V THE 6BQ 5 I S AN OUTPUT PENTODE D E S I G N E D FOR A P P L I C A T I O N IN MED IUM POWER

Contextual Info: L 1 L IN E A R _ t r ç 2 TECHNOLOGY Precision, Chopper-Stabilized Instrumentation Am plifier FCfîTURCS D C S C R IP T IO n • ■ ■ ■ ■ ■ ■ ■ ■ ■ The LTC1100 is a high precision instrum entation am pli­ fie r using chopper-stabilization techniques to achieve

TDC1010

Abstract: "multiplier accumulator" TSX-11 16x16 multiplier tsl-3 IDT7210 ma7010 Marconi radiation hard
Contextual Info: MA7010 Marconi Electronic Devices D. + . u. .on ^ a r . ^ A ccum u|ator Signal S lic e T M APPLICATIO NS FEATU RES • Radiation Hard To 1 MRad (Si) • Fast Fourier transform processing • H igh SEU im m unity, Latch-up free • Array processing • Silicon-on-Sapphire technology

Contextual Info: ANALOG DEVICES 10-Bit, 125 MSPS High Performance TxDAC D/A Converter AD9750* FEATURES High Performance M em ber of Pin-Compatible TxDAC Product Family 125 MSPS Update Rate 10-Bit Resolution Excellent Spurious Free Dynamic Range Performance SFDR to Nyquist @ 5 M Hz Output: 76 dBc