LEM LT 100 Search Results

2SC1628

Abstract: 2sc1628-y 2sc1628 transistor 2sc1628-0 TRANSISTOR 2sc1628 2sc1628y
Contextual Info: î/UD>NPN=«Êi0Kh5>2?^ PCT755Î 2 s c 1628 SILICON NPN TRIPLE DIFFUSED TRANSISTOR (PCT PROCESS h O • H i g h V o lt a g e  itŒ T ^- : a \s 9 D river V q eo = ^ (il Stage A m p l i f ie r 150V 5 W : W S S A 8 1 8 ¿^> - 7' 5 ^ . / — s'm p lem en ta r 7 to

lem lt 100 p

Abstract: lem current lt 100 lem module HEME 1000 lem heme current 1000 lem current LTA
Contextual Info: LEM CURRENT TRANSDUCERS Module LTA 100-PR Instantaneous and True RMS Outputs Definition - Principle The LEM type LTA 100-PR is a transducer employing the Hall effect to measure DC and complex waveform AC currents in a non invasive manner. Galvanic isolation is provided

lem current lt 100

Abstract: lem lt 100 LEM LT 200-S Lem LT 200 Hall Effect Current Measurements 10000-S
Contextual Info: Current Transducer LT 10000-S IPN = 10000 A For the electronic measurement of currents : DC, AC, pulsed., with a galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). Electrical data IPN IP RM Primary nominal r.m.s. current

LEM Components

Contextual Info: Current Transducer LT 10000-S IPN = 10000 A For the electronic measurement of currents : DC, AC, pulsed., with a galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). Electrical data IPN IP RM Primary nominal r.m.s. current

LEM Components

Abstract: 1005-S Lem LT 1000
Contextual Info: Current Transducer LT 1005-S IPN = 1000 A For the electronic measurement of currents : DC, AC, pulsed., with a galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). Electrical data IPN IP RM Primary nominal r.m.s. current

Contextual Info: Current Transducer LT 1005-S IPN = 1000 A For the electronic measurement of currents : DC, AC, pulsed., with a galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). 0623 Electrical data IPN IP RM Primary nominal r.m.s. current

lem lt 2000

Abstract: M66244FP
Contextual Info: PRELIMINARY DATA SHEET MITSUBISHI <DIGITAL ASSP> M66244FP June 1998 Ver.8.0.0 High Speed Monolithic Pulse Width Modulator NOTE:This is not final specification. Some parametric limits are subject to change DESCRIPTION The M66244FP is a high-speed digitally programmable pulse width modulator PWM which

Contextual Info: Current Transducer LT 505-S IPN = 500 A For the electronic measurement of currents : DC, AC, pulsed., with a galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). 0623 Electrical data IPN IP RM Primary nominal r.m.s. current

Contextual Info: P R E U M tfM A R Y D A T A S H E E T M it s u b is h i < d ig it a l a s s p > M66244FP June 1998 Ver.8.0.0 High Speed M onolithic Pulse W idth Modulator NOTE:This is not final specification. Some parametric limits are subject to change DESCRIPTION The M66244FP is a high-speed digitally programmable pulse width modulator PWM which

lem lt 100

Contextual Info: 电 流 传 感 器 LT 108-S7 IPN = 原边和副边之间是绝缘的 ，用于测量直流 100 A 交流和脉冲电流 。 电参数 性能 原边额定有效值电流 原边电流， 测量范围 测量电阻 @ IPN IP RM 100 0 . ± 150 A A 器 RM min

thyristors 5000 volt 3000 amperes

Abstract: Lem LT 300 - t CODE 1AM powerex T9G T9G0 Lem LT 300
Contextual Info: P0U1EREX INC m u o D5 a x DE 1 7 5 c14bEl QD03DSb S _ T - 2 S *2 tf T9G0 Pow erex, Inc. Hlllls Street, Youngwood, Pennsylvania 15897 412 925 -7 2 7 2 Phase Control SCR P o w e re x Europe, S.A., 4 28 Ave. Q. Durand, BP107, 72003 LeM ana, France (43 ) 72.75.1S

lem current lt 100

Abstract: LEM Components
Contextual Info: Current Transducer LT 4000-T IPN = 4000 A For the electronic measurement of currents : DC, AC, pulsed., with a galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). Electrical data IPN IP RM Primary nominal r.m.s. current

lem lt 100

Abstract: Lem LT 80
Contextual Info: 电 流 传 感 器 LT 108-T7 IPN = 原边和副边之间是绝缘的 ，用于测量直流 100 A 交流和脉冲电流 。 电参数 性能 原边额定有效值电流 原边电流， 测量范围 测量电阻 @ IPN IP RM 100 0 . ± 150 A A 器 RM min

lem current lt 100

Abstract: lem current lt 2005-s lem lt 2000 LEM LT 2005-s LEM Components SMPS IC 2005
Contextual Info: Current Transducer LT 2005-S IPN = 2000 A For the electronic measurement of currents : DC, AC, pulsed., with a galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). Electrical data IPN IP RM Primary nominal r.m.s. current

LT 505-S

Abstract: LEM LT 505-s LEM Components TR 505 LT 405
Contextual Info: Current Transducer LT 505-S IPN = 500 A For the electronic measurement of currents : DC, AC, pulsed., with a galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). Electrical data IPN IP RM Primary nominal r.m.s. current

Lem LT 300 - t

Contextual Info: ANALOG DEVICES FEATURES 60 MHz Pulse Rate 8-Bit Resolution Center, Left or Right Justify Low Power: 700 m W typical M inim um Pulse W idth: <5 ns M axim um PW: 100 % Full-scale Pulse Width Modulator AD9561 FUNCTIONAL BLOCK DIAGRAM APPLICATIONS Laser Printers

1005-S

Abstract: LT 1005-S LEM LT 200-S
Contextual Info: 电 流 传 感 器 LT 1005-S IPN = 1000 A 电流传感器原边与副边之间是绝缘的，主要用于测量直流 交流 和脉冲电流., 电参数 原边额定 有效值电流 原边电流， 测量范围 测量电阻 @ IPN IP RM with ± 15 V

T2515

Abstract: T17N
Contextual Info: EUPEC SSE D 3M032T7 0000LS3 5ST » U P E C ' T17N 'T 1 2 £ > ~ & Typenreihe/Type range T 17 N Elektrische Eigenschaften Electrical properties H ochstzulässige W erte V d rm , V r r m 400 60 0 900 800 1000 1100 1200 M axim um perm issible values P eriodische V orw ärts- und

MPY16HJ

Abstract: MPY-16HJ WTL1016 weitek 1516B MSP 3140 64 bit booth multiplier trw 1016 "Pin for Pin"
Contextual Info: .-I H y.- r ^L/rrL^ 7 IN N O V A T IO N S IN M I C R O S Y S T E M T E C H N O L O G Y 0 3b j ^ f A ' WTL 1516/1516A/1516B Features Description • 16 X 16 p arallel a rra y m ultip lier T h e W T L 1516/1516A/1516B are N M O S 16 X 16 p arallel arra y, m ultipliers characterized

Contextual Info: PNP EPITAXIAL TIP145/146/ 147 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN M INh FE = 1000 @ V CE = -4V, IC = -5A MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE T O -3 P • C o m p lem en t to T IP 1 4 0 /1 4 1 /1 4 2

Contextual Info: I n ter n a tio n a l MB805 thru S e m ic o n d u c to r , I n c . MB810 MINIATURE SINGLE PHASE BRIDGE RECTIFIER VOLTAGE: 50 to 1000 Volts CURRENT: 8.0 Amperes FEATURES: Plastic material used carries Underwriters Laboratory recognition 94 V -0 Low leakage, typically less than 0.1 uA

Bridge Rectifier ccz

Abstract: SB25005 SB2501 SB2502 SB2504 SB2506 SB2510 E127707
Contextual Info: SB25005 THRU SB2510 25.0 AMP SILICON BRIDGE V O LTA G E RAN G E FEATURES 50 to 1000 V olts * U niversale 4~way term inals: sn a p -o n , w rap-around, CURRENT solder or P .C . board m ounting 25.0 Am peres * T h is se rie s is U L recognized under com ponent index,

LTSR 6-NP

Abstract: LTSR 25-NP ch-1228 nanalem lem lt 100 p LTS 25-NP hall current transducer lts 6-np LEM hall effect sensor voltage offset cancellation LTSR 15-NP LA 25-NP
Contextual Info: Technical Information LTSR: ASIC Based Closed-Loop Transducers from 6 A up to 25 A nominal with reference access LTSR: ASIC Based Closed-Loop Transducers from 6 A up to 25 A nominal with reference access. By Stéphane Rollier, Christophe Benz & Hans Dieter Huber.

F190

Abstract: F191 F-190
Contextual Info: 190 54F/74F190 Connection Diagrams Up/Down Decade Counter W ith Preset and Ripple Clock m Oo[T 77| c p c l [7 1 3| RC / d |T Ï 2 l TC Q2 T T T | PL 03 [ 7 7 3 ] P2 Description The ’F190 is a reversible BCD (8421 decade co u n te r featuring synchronous cou ntin g and asynchronous presetting. The preset feature