LEM LA 50 P Search Results

current transducer la 55-tp

Contextual Info: Current Transducer LA 55-TP IPN = 50 A For the electronic measurement of currents : DC, AC, pulsed., with a galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). 16016 Electrical data IPN IP RM Primary nominal r.m.s. current

lem la 50 A 25-NP

Contextual Info: Current Transducer LA 25-NP/SP11 IPN = 1 A For the electronic measurement of currents : DC, AC, pulsed, mixed, with a galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). 16095 Electrical data IPN IP RM

lem la 25 p

Abstract: lem la 50 p
Contextual Info: Stromwandler LA 200-P IPN = 200 A Für die elektronische Strommessung : DC, AC, Impuls., mit galvanischer Trennung zwischen dem Primärkreis Starkstromkreis und dem Sekundärkreis (elektronischer Kreis). Elektrische Daten IPN IP RM Primärnennstrom, effektiv

25-NP

Contextual Info: Current Transducer LA 25-NP IPN = 5-6-8-12-25 A For the electronic measurement of currents : DC, AC, pulsed, mixed, with a galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). 16080 Electrical data IPN

Contextual Info: Current Transducer LA 25-NP For the electronic measurement of currents: DC, AC, pulsed., with galvanic isolation between the primary circuit and the secondary circuit. IPN = 5-6-8-12-25 At 16080 Features Electrical data IPN Primary nominal current rms IPM

Contextual Info: Stromwandler LA 100-TP IPN = 100 A Für die elektronische Strommessung : DC, AC, Impuls., mit galvanischer Trennung zwischen dem Primärkreis Starkstromkreis und dem Sekundärkreis (elektronischer Kreis). Elektrische Daten IPN IP RM Primärnennstrom, effektiv

Molex 5045-04 ag

Abstract: LEM Components Molex 5045-04
Contextual Info: Current Transducer LA 100-S/SP1 IPN = 100 A For the electronic measurement of currents : DC, AC, pulsed., with a galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). Electrical data IPN IP RM Primary nominal r.m.s. current

lem la 50 p

Abstract: LEM Components
Contextual Info: Current Transducer LA 150-P IPN = 150 A For the electronic measurement of currents: DC, AC, pulsed, mixed, with a galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). Preliminary Electrical data IPN IP

LEM Components

Abstract: UPS pcb
Contextual Info: Current Transducer LA 55-TP IPN = 50 A For the electronic measurement of currents : DC, AC, pulsed., with a galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). Electrical data IPN IP RM Primary nominal r.m.s. current

lem la 50 p

Abstract: 25-NP
Contextual Info: Stromwandler LA 25-NP IPN = 5-6-8-12-25 A Für die elektronische Strommessung : DC, AC, Impuls., mit galvanischer Trennung zwischen dem Primärkreis Starkstromkreis und dem Sekundärkreis (elektronischer Kreis). Elektrische Daten IPN IP RM Primärnennstrom, effektiv

25-NP

Abstract: LA 25-NP LEM Components
Contextual Info: Current Transducer LA 25-NP/SP7 IPN = 2.5 A For the electronic measurement of currents : DC, AC, pulsed, mixed, with a galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). Electrical data IPN IP RM Primary nominal r.m.s. current

416-TB

Abstract: lem la 50 p ct 416
Contextual Info: 416-TB OSCAR Satellite Circular Polarization Boomer Antenna ij§cushcraft c o r p o r a t i o n 416-TB OSCAR Satellite Circular Polarization Boomer Antenna cushcraft C O R P O R A T I O N 951298 3/ 84 Your C u s h c ra ft 416TB. Tw ist Boom er, is a hig h perfo rm ance c ircu la r polarized Yagi fo r u s e w ith O S C A R an d other Satellites.

Lem LT 300 - t

Contextual Info: ANALOG DEVICES FEATURES 60 MHz Pulse Rate 8-Bit Resolution Center, Left or Right Justify Low Power: 700 m W typical M inim um Pulse W idth: <5 ns M axim um PW: 100 % Full-scale Pulse Width Modulator AD9561 FUNCTIONAL BLOCK DIAGRAM APPLICATIONS Laser Printers

ct-2048

Abstract: CT 2048 CD182 CCD182 Fairchild Imaging
Contextual Info: Fairchild Imaging Sensors Sensors PRELIMINARY i- o r a /v i- CCD182 2588 Element Linear Image Sensor FEATURES • 2 5 8 8 x 1 ph oto s ite array s im ila r to th e CCD181 ■ Very high sp e e d o p eration up to 6 0M H z data rate ■ V oltag e-s e le c tab le leng ths

HALF WAVE RECTIFIER

Contextual Info: ESU74 EDISWAN ESUT4 HIGH VACUUM HALF WAVE RECTIFIER R A T IN G Filament Voltage volts Vf 4.0 Filament C u rre n t (amps) If 11.5 Maxim um Peak Inverse Voltage (volts) P.I.V. (max) Maxim um Mean A node C u rre n t (m A) la(av)max 40,000 80 Average Maxim um Filament

ADSP-1016JD

Abstract: MPY16HJ d64a f64a trw 1016 ADSP-1016JX mpy-16hj1 ADSP-1016SD trw mpy 16 MPY-16HJ
Contextual Info: ANALOG DEVICES □ FEATURES 16 x 16 Parallel Array M u ltip lier 150m W m ax P ow er Dissipation w ith CMOS Technology 145ns M u ltip ly Tim e Im proved M PY-16HJ Second Source T w o's C om plem ent, Unsigned M a gnitud e or M ixed M o d e M ultiplication

732 LEM

Abstract: lem 718 T7352
Contextual Info: Data Sheet January 1994 % A H s .T ^ ^ ^ M ic ro e le c tro n ic s T7351B FDDI/T7352 TPDDI Physical Layer Devices Features Description • Single-chip FDDI physical layer PHY solution TheT7351B FDDI/T7352 TPDDI Physical Layer Devices are single VLSI components that implement

Contextual Info: W D A T E ADC-304 I IN N O V A TIO N a n d E X C E L L E N C E 8~BÌt, 20MHZ, LOW"POW6r Flash A/D Converters FEATURES • • • • • • • 8-bit resolution 20MHz conversion rate ±1/2LSB maximum nonlinearlty 8MHz input bandwidth Low power consumption, 375mW

IS2074 diode

Abstract: flip flap 1S2074 400M HD74LS78A
Contextual Info: HD74LS78A Dual J-K Flip-Flops (with Preset. Common Clear, and Common Clock IBLOCK D IA G R A M ^ ) IP IN A R R A N G E M E N T •RECOMMENDED OPERATING CONDITIONS Ite m C lock fre q u e n c y Clock High w idth t* Preset r C le ar Sym bol fr t.r k Low min

NS01A

Abstract: CCD145DC
Contextual Info: LDRAL Fairchild Imaging Sensors CCD145 2048-Element Linear Image Sensor FEATURES • 2048 « 1 photosite array ■ 13^m « 13^m photosites on 13/jm pitch ■ Anti-blooming and integration control ■ Enhanced Spectral Response particularly in the blue region

74416

Abstract: 74453 MCC4016 MC1741C MC1741CP1 MCC1741C MCC4000 MCC4002 MCC4003 MCC4300
Contextual Info: LINEAR INTEGRATED CIRCUIT CHIPS G E N E R A L D E S C R IP T IO N M o to r o la n o w o ffe rs a ve ry b ro a d se le c tio n o f lin e a r integ rated c ir c u it c h ip s . A m o n g th e ty p e s o f c ir c u its w h ic h c o m p o se th e lin e a r f a m ily th e re are:

MSCQ2

Abstract: t 317 transistor
Contextual Info: Microsemi W ntertown, M A 0Î172 PH: S17 S26-0404. F A X <617) #24-1235 2N2369A Features 40 Volts 200mAmps • Meats MIL-S-19500/317 • Iiolector-Sase Voftage 40V • (Jollector Current 200 mA • I-ast Switching 3 0 nS NPN BIPOLAR TRANSISTOR Maximum Ratings

1rf820

Abstract: LEM LT 308 N-Channel Depletion-Mode MOSFET high voltage S2000A
Contextual Info: Tem ic AN707 S e m i c o n d u c t o r s Designing Low-Power Off-Line Flyback Converters Using the Si9120 Switchmode Controller IC by C ra ig V arga G e ttin g high efficien cy fro m lo w -p o w er o ff-lin e p o w er supplies has alw ay s p o sed d ifficulties fo r the d esign

Contextual Info: <o> ai 1m CmC i m w lC m m m •v i 00 S 304 “-.j U I N î AimD' N A N D i j A î E ^JSS W S E M /C O N D U C T O P m ssM FEA TU R E S The SY100S304 is an ultra-fast quint AND/NAND gate designed for use in high-performance ECL systems. This device also features a Function F output which is the wireNOR of the AND gate outputs. The inputs on the device