LEM CURRENT LTA Search Results

HEME 1000

Abstract: lem module 50 lem lta 50p lem heme current 1000 LEM LTA lem current LTA FR7200 LTA51P 50psp1 lem module
Contextual Info: LEM CURRENT TRANSDUCERS Module LTA 50-P/SP1 Instantaneous Outputs Definition - Principle The LEM type LTA 50-P/SP1 is a transducer employing the Hall effect to measure DC and complex waveform AC currents in a non invasive manner. Galvanic isolation is provided

lem lta 100p

Abstract: HEME 1000 lem module 50 FR7200 lem module lem current lem heme current 1000 LEM LTA lem 50 p lem+lta+100p/sp1
Contextual Info: LEM CURRENT TRANSDUCERS Module LTA 100-P/SP1 Instantaneous Outputs Definition - Principle The LEM type LTA 100-P/SP1 is a transducer employing the Hall effect to measure DC and complex waveform AC currents in a non invasive manner. Galvanic isolation is provided

LEM LTA

Abstract: lem module lta 50pr lem current LTA LTA50PR lem module HEME 1000 lem 50 p 50PR
Contextual Info: LEM CURRENT TRANSDUCERS Module LTA 50-PR Instantaneous and True RMS Outputs Definition - Principle The LEM type LTA 50-PR is a transducer employing the Hall effect to measure DC and complex waveform AC currents in a non invasive manner. Galvanic isolation is provided

lem lt 100 p

Abstract: lem current lt 100 lem module HEME 1000 lem heme current 1000 lem current LTA
Contextual Info: LEM CURRENT TRANSDUCERS Module LTA 100-PR Instantaneous and True RMS Outputs Definition - Principle The LEM type LTA 100-PR is a transducer employing the Hall effect to measure DC and complex waveform AC currents in a non invasive manner. Galvanic isolation is provided

lem current

Abstract: lem module lem module 50 LEM LT 200-S lem current LTA LTA200-SP2 LTA200-S code lem hall current transducer lem module hall effect
Contextual Info: •70 ^^ o S S/ /' oI ' LEM CURRENT TRANSDUCERS MODULE LTA 200-S/SP2 Instantaneous Output Deflnition - Principle The LEM type LTA 200-S/SP2 is a transducer employing the Hall effect to measure DC and complex waveform AC currents in a non invasive manner. Galvanic isolation

Contextual Info: PNP EPITAXIAL TIP145/146/ 147 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN M INh FE = 1000 @ V CE = -4V, IC = -5A MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE T O -3 P • C o m p lem en t to T IP 1 4 0 /1 4 1 /1 4 2

Contextual Info: Current Mode PWM Control Circuit with 50%Max Duty Cycle Features Description The CS-3844B p ro v id es all th e neces­ sary featu res to im p lem en t off-line fixed frequency c u rren t-m o d e control w ith a m in im u m n u m b e r of external com ponents

Contextual Info: Current Mode PWM Control Circuit with 50% Max Duty Cycle Description The CS-3845B p ro v id es all th e n eces­ sary features to im p lem en t off-line fixed freq u en cy c u rren t-m o d e control w ith a m in im u m n u m b e r of external c om ponents

lem current

Abstract: LEM LTA HEME International 50PR lem module 50 LTA50PR lem heme current 1000 HEME 1000
Contextual Info: I to - c o i L E M HEME P IO N E E R IN G P O W E R E L E C T R O N IC S LEM CURRENT TRANSDUCERS Module LTA 50PR Instantaneous and True RMS Outputs . Definition - Principle T h e L EM type LTA50PR is a transducer em ploying the Hall Fffect to m e asu re D.C a n d c o m plex wavefor m A.C

Lem LT 300 - t

Contextual Info: ANALOG DEVICES FEATURES 60 MHz Pulse Rate 8-Bit Resolution Center, Left or Right Justify Low Power: 700 m W typical M inim um Pulse W idth: <5 ns M axim um PW: 100 % Full-scale Pulse Width Modulator AD9561 FUNCTIONAL BLOCK DIAGRAM APPLICATIONS Laser Printers

Contextual Info: AN3821K ICs for MOTOR CONTROL AN3821K VCR Capstan Direct Motor Drive Circuit • Outline Unit : m m T h e AN3821K is an in te g rate d circuit designed to drive a VCR 12 .0 + 0.3 3 .6 ± 0 . 2 c ap s ta n DD m otor. ■ Features • T hree-phase full-w ave operation.

AD9560

Contextual Info: ANALOG DEVICES FEATURES Up to 50 MHz Pulse Rate Autocalibration on Chip 8-Bit Resolution Center, Leading, Trailing Edge Modulation Low Power: 335 mW Single +5 V Operation High Speed Monolithic Pulse Width Modulator AD9560 FUNCTIONAL BLOCK DIAGRAM APPLICATIONS

Contextual Info: ANALOG DEVICES Pulse Width Modulator AD9561 FUNCTIONAL BLOCK DIAGRAM FEATURES 60 M Hz Pulse Rate 8-Bit Resolution Center, Left or Right Justify Low Power: 700 m W typical M inim um Pulse Width: <5 ns Maxim um PW: 100 % Full-scale APPLICATIO NS Laser Printers

15-V

Abstract: CD40 CD4001UB
Contextual Info: HA RR IS S E M I C O N D S E C T O R M4E t B 4302S71 D03?3St> O « H A S T -^ 3 -^ .1 cD4001UB Types 21 HARRIS C M O S Quad 2-Input NOR Gate F e a tu re s : • Propagation delay tim e = 30 ns ty p . at C L = 50 p F , V D D = 1 0 V H ig h -V o lta g e Types (2 0-V o lt Rating)

Bridge Rectifier ccz

Abstract: SB25005 SB2501 SB2502 SB2504 SB2506 SB2510 E127707
Contextual Info: SB25005 THRU SB2510 25.0 AMP SILICON BRIDGE V O LTA G E RAN G E FEATURES 50 to 1000 V olts * U niversale 4~way term inals: sn a p -o n , w rap-around, CURRENT solder or P .C . board m ounting 25.0 Am peres * T h is se rie s is U L recognized under com ponent index,

FCX749

Contextual Info: FCX749 SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR FEATU RES * * * F A S T SW ITCH IN G . LO W SA T U R A T IO N V O LTA G E . H fe UP TO 6A P U LSED . * * 2 A lc CO N TIN U O U S. CO M P LEM EN TA R Y T Y P E - FCX649. PARTM ARKIN G D E T A ILS - N6

FCX649

Abstract: FCX749 lem lc 300
Contextual Info: FCX649 SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR FE A T U R E S * * F A S T SW ITCH IN G . LOW S A T U R A TIO N V O LTA G E . * * H fe UP TO 6A PU LSED . 2 A lc CO N TIN U O U S. * CO M P LEM EN TA R Y T YP E - FCX749. PAR TM A R KIN G D E TA ILS - N3

AD9560

Abstract: AD9560KN AD9560KR
Contextual Info: ANALOG ► DEVICES High Speed Monolithic Pulse Width Modulator AD9560 FUNCTIONAL BLOCK DIAGRAM FEATURES Up to 50 MHz Pulse Rate Autocalibration on Chip 8-Bit Resolution Center, Leading, Trailing Edge Modulation Low Power: 335 mW Single +5 V Operation APPLICATIONS

PU4314

Abstract: npn switching transistor Ic 5A 6 "transistor arrays" ic
Contextual Info: Power Transistor Arrays PU4314 PU4314 Silicon NPN/PNP Epitaxial Planar Type Package Dimensions Power Amplifier, Switching • Features • • • • L ow c o lle cto r -e m itter saturation v o lta g e Vc^sau G ood linearity of DC curren t gain (hFE) H igh sp e e d sw itch in g

MPY16HJ

Abstract: MPY-16HJ WTL1016 weitek 1516B MSP 3140 64 bit booth multiplier trw 1016 "Pin for Pin"
Contextual Info: .-I H y.- r ^L/rrL^ 7 IN N O V A T IO N S IN M I C R O S Y S T E M T E C H N O L O G Y 0 3b j ^ f A ' WTL 1516/1516A/1516B Features Description • 16 X 16 p arallel a rra y m ultip lier T h e W T L 1516/1516A/1516B are N M O S 16 X 16 p arallel arra y, m ultipliers characterized

AP-B10

Abstract: XW4B-03C1-H1
Contextual Info: AC Current transducer AP-B10 IPN = 10 . 400 A Split core transducer for the electronic measurement AC waveforms current, with galvanic isolation between the primary High power and the secondary circuits (Electronic circuit). Switch selectable ranges and RMS 0-5V and 0-10V switch selectable voltage output.

2SD2133

Abstract: 2SB1413
Contextual Info: Power Transistors 2SD2133 2SD2133 Silicon NPN Epitaxial Planar Type • P a c k a g e D im e n s io n s A F P o w e r A m p lifie r, D riv e r C o m p le m e n ta ry P a ir w ith 2 S B 1 4 1 3 ■ F e a tu re s • L ow c o lle c to r-e m itte r s a tu ra tio n v o ltag e V cec^ d

Contextual Info: AW02G THRU AW08G SERIES MINIATURE GLASS PASSIVATED CONTROLLED AVALANCHE SINGLE - PHASE SILICON BRIDGE RECTIFIER VOLTAGE - 200 to 800 Volts C U R R E N T -1.5 Amperes FEATURES ♦ Glass passivated chip junctions ♦ Plastic material used carries Underwriters

KSE350

Contextual Info: KSE350 PNP EPITAXIAL SILICON TRANSISTOR HIGH COLLECTO R-EM ITTER SUSTAINING VOLTAGE HIGH VOLTAGE GENERAL PURPOSE APPLICATIONS SUITABLE FOR TRANSFORM ER • C o m p lem en t to K S E 3 4 0 ABSOLUTE MAXIMUM RATINGS R a tin g U n it C ollector- B ase Vo ltage