LDR DATASHEET Search Results

CI-4010

Abstract: CISS 3010 50 Hz notch filter ldr used in light sensitive alarm motion DETECTOR CIRCUIT using LDR dark light sensor using LDR AND transistor LIGHT ALARM CIRCUIT WITH LDR motion DETECTOR CIRCUIT DIAGRAM dual bright 3mm LDR simple circuit design of ldr sensor
Contextual Info:  CISS Motion Detector MOTION DETECTOR CI-3010 Information Brochure ➫ CI-3010 Motion Detector IC ➫ CI-3010 Application Notes ➫ CI-3010 Motion Detector Set → PIR Sensor → Fresnel Lens → LDR ➫ CI-3010 Demonstration Board 1.0 27. August 1997 Creations In Silicon & Software

ARM processor

Abstract: ARM processor data sheet ARM PROCESSOR DATASHEET arm 5 datasheet arm 7 data sheet ARM710 ARM7500
Contextual Info: 1 5 11 ARM Processor Instruction Set 5.1 Instruction set summary 5-2 5.2 The condition field 5-3 5.3 Branch and branch with link B, BL 5-4 5.4 Data processing 5-6 5.5 PSR transfer (MRS, MSR) 5-15 5.6 Multiply and multiply-accumulate (MUL, MLA) 5-20 5.7 Single data transfer (LDR, STR)

Contextual Info: DATASHEET Radiation Hardened 30V 32-Channel Analog Multiplexer ISL71841SEH Features The ISL71841SEH is a radiation hardened, 32-Channel high ESD protected multiplexer that is fabricated using Intersil’s proprietary P6SOI Silicon On Insulator process technology to

Contextual Info: TAOS Inc. is now ams AG The technical content of this TAOS datasheet is still valid. Contact information: Headquarters: ams AG Tobelbaderstrasse 30 8141 Unterpremstaetten, Austria Tel: +43 0 3136 500 0 e-Mail: ams_sales@ams.com Please visit our website at www.ams.com

Contextual Info: DATASHEET Radiation Hardened 30V 16-Channel Analog Multiplexer ISL71840SEH Features The ISL71840SEH is a radiation hardened, 16-Channel high ESD protected multiplexer that is fabricated using Intersil’s proprietary P6SOI Silicon On Insulator process technology to

Contextual Info: 2N5401HR Hi-Rel PNP bipolar transistor 150 V, 0.5 A Datasheet - production data Features 3 1 BVCEO 150 V IC max 0.5 A HFE at 10 V - 150 mA > 60 1 2 2 3 TO-18 LCC-3 3 • Hermetic packages • ESCC and JANS qualified 4 1 • Up to 100 krad(Si) low dose rate

Contextual Info: 2N5153HR Hi-Rel PNP bipolar transistor 80 V - 5 A Datasheet - production data Features 2 BVCEO 80 V IC max 5A HFE at 10 V - 150 mA > 70 Operating temperature range -65°C to +200°C 3 1 TO-257 TO-39 2 3 1 • Hi-Rel PNP bipolar transistor • Linear gain characteristics

marking code RAD SMD Transistor npn

Abstract: JS55
Contextual Info: 2N5551HR Hi-Rel NPN bipolar transistor 160 V, 0.5 A Datasheet - production data Features 3 1 BVCEO 160 V IC max 0.5 A HFE at 5 V - 10 mA > 80 1 2 2 3 TO-18 LCC-3 3 • Hermetic packages • ESCC and JANS qualified 4 1 • Up to 100 krad(Si) low dose rate

Contextual Info: 2N5153HR Hi-Rel PNP bipolar transistor 80 V - 5 A Datasheet - production data Features 2 BVCEO 80 V IC max 5A HFE at 10 V - 150 mA > 70 Operating temperature range -65°C to +200°C 3 1 TO-257 TO-39 2 3 1 • Hi-Rel PNP bipolar transistor • Linear gain characteristics

Contextual Info: TAOS Inc. is now ams AG The technical content of this TAOS datasheet is still valid. Contact information: Headquarters: ams AG Tobelbaderstrasse 30 8141 Unterpremstaetten, Austria Tel: +43 0 3136 500 0 e-Mail: ams_sales@ams.com Please visit our website at www.ams.com

Contextual Info: TAOS Inc. is now ams AG The technical content of this TAOS datasheet is still valid. Contact information: Headquarters: ams AG Tobelbaderstrasse 30 8141 Unterpremstaetten, Austria Tel: +43 0 3136 500 0 e-Mail: ams_sales@ams.com Please visit our website at www.ams.com

Contextual Info: 2N3700HR Hi-Rel 80 V, 1 A NPN transistor Datasheet - production data Features BVCEO 80 V IC max 1A HFE at 10 V - 150 mA >100 1 2 3 3 3 TO-18 4 1 1 2 2 LCC-3 UB Pin 4 in UB is connected to the metallic lid Figure 1. Internal schematic diagram • Hermetic packages

SOC2222AHR

Contextual Info: 2N2222AHR Hi-Rel 40 V, 0.8 A NPN transistor Datasheet - production data Features Parameter ESCC JANS BVCEO min 40 V 50 V 1 2 3 IC max 0.8 A hFE at 10 V - 150 mA 100 TO-18 3 3 4 1 1 2 • Hermetic packages 2 LCC-3 UB • ESCC and JANS qualified Pin 4 in UB is connected to the metallic lid.

Contextual Info: TAOS Inc. is now ams AG The technical content of this TAOS datasheet is still valid. Contact information: Headquarters: ams AG Tobelbaderstrasse 30 8141 Unterpremstaetten, Austria Tel: +43 0 3136 500 0 e-Mail: ams_sales@ams.com Please visit our website at www.ams.com

Contextual Info: TAOS Inc. is now ams AG The technical content of this TAOS datasheet is still valid. Contact information: Headquarters: ams AG Tobelbaderstrasse 30 8141 Unterpremstaetten, Austria Tel: +43 0 3136 500 0 e-Mail: ams_sales@ams.com Please visit our website at www.ams.com

520301006R

Abstract: 2N5154RESYHRG
Contextual Info: 2N5154HR Hi-Rel NPN bipolar transistor 80 V - 5 A Datasheet - production data Features 2 TO-39 BVCEO 80 V IC max 5A HFE at 10 V - 150 mA > 70 Operating temperature range - 65 °C to + 200 °C 3 1 TO-257 2 1 3 • Hi-Rel NPN bipolar transistor • Linear gain characteristics

st smd IC marking code

Abstract: 2N5154ESYHRT
Contextual Info: 2N5154HR Hi-Rel NPN bipolar transistor 80 V - 5 A Datasheet - production data Features 2 TO-39 BVCEO 80 V IC max 5A HFE at 10 V - 150 mA > 70 Operating temperature range - 65 °C to + 200 °C 3 1 TO-257 2 3 1 • Hi-Rel NPN bipolar transistor • Linear gain characteristics

NORPS-12 LDR

Contextual Info: Application Note 1949 Total Dose Testing of the ISL70419SEH Radiation Hardened Quad Operational Amplifier Introduction This document reports the results of low and high dose rate total dose testing of the ISL70419SEH quad operational amplifier. The tests were conducted to provide an assessment

specification of ldr

Abstract: LDR SPECIFICATION LDR voltage range
Contextual Info: Application Note 1870 Author: Nick van Vonno Total Dose Testing of the ISL70444SEH Radiation Hardened Quad Operational Amplifier Introduction and Executive Summary This document reports the results of low and high dose rate total dose testing of the ISL70444SEH quad operational

TSL26717

Contextual Info: TAOS Inc. is now ams AG The technical content of this TAOS datasheet is still valid. Contact information: Headquarters: ams AG Tobelbaderstrasse 30 8141 Unterpremstaetten, Austria Tel: +43 0 3136 500 0 e-Mail: ams_sales@ams.com Please visit our website at www.ams.com

Contextual Info: TAOS Inc. is now ams AG The technical content of this TAOS datasheet is still valid. Contact information: Headquarters: ams AG Tobelbaderstrasse 30 8141 Unterpremstaetten, Austria Tel: +43 0 3136 500 0 e-Mail: ams_sales@ams.com Please visit our website at www.ams.com

HS-1840ARH

Contextual Info: Test Report 010 Total Dose Testing of the ISL71840SEH 16-channel Analog Multiplexer Introduction This document provides interim results of a low and high dose rate total dose test of the ISL71840SEH 16-channel analog multiplexer. The test was conducted in order to determine the

Contextual Info: DATASHEET 40V Radiation Hardened and SET Enhanced Precision Low Power Operational Amplifier ISL70219ASEH, ISL70419ASEH Features The ISL70219ASEH and ISL70419ASEH are a family of very high precision amplifiers featuring the perfect combination of low noise vs power consumption. Low offset voltage, low IBIAS current

5962R11212

Contextual Info: DATASHEET 3A, Radiation Hardened, Positive, Ultra Low Dropout Regulator ISL75051SEH Features The ISL75051SEH is a radiation hardened low-voltage, high-current, single-output LDO specified for up to 3.0A of continuous output current. These devices operate over an input