LDMOS PUSH PULL Search Results

Capacitor Tantal SMD

Abstract: capacitor 0,1 k 250 mkt philips
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D427 BLF2048 UHF push-pull power LDMOS transistor Preliminary specification 1999 Jul 14 Preliminary specification UHF push-pull power LDMOS transistor BLF2048 PINNING - SOT539A FEATURES • High power gain PIN DESCRIPTION

2222-581

Abstract: capacitor MKT Philips PHILIPS MKT CAPACITOR BLF2048 capacitor 400 MKT philips C26C27
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D427 BLF2048 UHF push-pull power LDMOS transistor Preliminary specification 2000 May 24 Philips Semiconductors Preliminary specification UHF push-pull power LDMOS transistor BLF2048 PINNING - SOT539A FEATURES • High power gain

Capacitor Tantal SMD

Abstract: Tantal SMD transistor SMD 2201
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D427 BLF2048 UHF push-pull power LDMOS transistor Preliminary specification 1999 Oct 18 Preliminary specification UHF push-pull power LDMOS transistor BLF2048 PINNING - SOT539A FEATURES • High power gain PIN DESCRIPTION

transistor 2201

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D427 BLF2048 UHF push-pull power LDMOS transistor Preliminary specification 1999 May 31 Preliminary specification UHF push-pull power LDMOS transistor BLF2048 PINNING - SOT539A FEATURES • High power gain PIN DESCRIPTION

Capacitor Tantal SMD

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D427 BLF2048 UHF push-pull power LDMOS transistor Preliminary specification 1999 Nov 23 Preliminary specification UHF push-pull power LDMOS transistor BLF2048 PINNING - SOT539A FEATURES • High power gain PIN DESCRIPTION

BLF2048

Abstract: capacitor MKT Philips PHILIPS MKT CAPACITOR PHILIPS MKT 373 MGT007 w3 smd transistor MGT014 MGT012
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D427 BLF2048 UHF push-pull power LDMOS transistor Preliminary specification Supersedes data of 1999 Dec 01 2000 Feb 17 Philips Semiconductors Preliminary specification UHF push-pull power LDMOS transistor FEATURES BLF2048

BLF2022-120

Abstract: 3155 power transistor
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D427 BLF2022-120 UHF push-pull power LDMOS transistor Preliminary specification Supersedes data of 2001 Jan 04 2003 Mar 07 Philips Semiconductors Preliminary specification UHF push-pull power LDMOS transistor BLF2022-120

SOT539A

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D427 BLF2022-120 UHF push-pull power LDMOS transistor Preliminary specification Supersedes data of 2001 Jan 04 2003 Mar 07 Philips Semiconductors Preliminary specification UHF push-pull power LDMOS transistor BLF2022-120

BLF2022-120

Abstract: BP317
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D427 BLF2022-120 UHF push-pull power LDMOS transistor Preliminary specification 2000 Dec 12 Philips Semiconductors Preliminary specification UHF push-pull power LDMOS transistor BLF2022-120 PINNING - SOT539A FEATURES • High power gain

smd transistor ne c2

Abstract: smd transistor zi capacitor MKT Philips capacitor 400 MKT philips SMD Capacitor symbols transistor smd Catalogue capacitor variable ceramic variable capacitor Tekelec TO aeg b2 60 52 30
Contextual Info: DISCRETE SEMICONDUCTORS E>^m S ln lE E T BLF2048 UHF push-pull power LDMOS transistor Preliminary specification Supersedes data of 1999 Dec 01 Philips Sem iconductors 2000 Feb 17 PHILIPS Philips Semiconductors Preliminary specification UHF push-pull power LDMOS transistor

LDU601C

Abstract: 600W TRANSISTOR AUDIO AMPLIFIER PTFA043002E M2.5 torque settings 300W TRANSISTOR AUDIO AMPLIFIER 600w power amplifier GR01790 LDU60 300w amplifier rf amplifier 100w
Contextual Info: LDU601C 600W pep –27dBc min LDMOS Technology Designed for analog TV applications, this pallet amplifier incorporates microstrip technology and push-pull LDMOS to enhance ruggedness and reliability. Patented bias control and matching circuit. • • •

PTFA043002E

Abstract: LDU601C M2.5 torque settings PTF*A043002E PTFA043002 LDU60 100W 12 volt ldmos rm2005
Contextual Info: LDU601C 600W pep –27dBc min LDMOS Technology Designed for analog TV applications, this pallet amplifier incorporates microstrip technology and push-pull LDMOS to enhance ruggedness and reliability. Patented bias control and matching circuit. • • •

dvb-t transmitters

Abstract: 80w audio amplifier with tone control BLF878 LDU661C amplifier 400W RF Amplifier 500w M2.5 torque settings 100w audio amplifier 2 x 20w amplifier 400w amplifier
Contextual Info: LDU661C 600W pep –27dBc min LDMOS Technology Designed for analog and digital TV transposers and transmitters, this amplifier incorporates micro-strip technology and push-pull LDMOS to enhance ruggedness and reliability. Patented bias control and matching circuit.

LDL8

Abstract: PTF141501A 200w AUDIO AMPLIFIER 200w audio power amplifier 200W PUSH-PULL LDL80 LDMOS digital
Contextual Info: LDL80 80W DAB LDMos Technology Designed for Digital Audio Broadcasting, this amplifier incorporates microstrip technology and push-pull LDMos Devices to enhance ruggedness and reliability. • • • • • • • • 1450 - 1500 MHz 28 ÷32 V 30V Nominal

MRF372

Abstract: power 470-860mhz w LDU300 ING01 dvb-t transmitters HEATSINK PASTE WPS
Contextual Info: LDU300 300W peak sync LDMOS Technology Designed for analog and digital TV transposers and transmitters, this amplifier incorporates microstrip technology and push-pull LDMOS to enhance ruggedness and reliability. • • • • 470 - 860 MHz 28 ÷32 Volt 32 Nominal

LDU300

Abstract: MRF372 LDMOS digital power 470-860mhz w thermal compound wps PAG24
Contextual Info: LDU300 300W peak sync LDMOS Technology Designed for analog and digital TV transposers and transmitters, this amplifier incorporates microstrip technology and push-pull LDMOS to enhance ruggedness and reliability. • • • • 470 - 860 MHz 28 ÷32 Volt 32 Nominal

200W PUSH-PULL

Abstract: cw 180 LDU200-S power 470-860mhz w SD56120M thermal compound wps TRANSCLAMP-1
Contextual Info: LDU200-S 200W peak sync LDMOS Technology Designed for anolog and digital TV transposers and transmitters, this amplifier incorporates microstrip technology and push-pull LDMOS to enhance ruggedness and reliability. • • • • 470 - 860 MHz 28 ÷32 Volt 32 Nominal

agilent ads balun

Abstract: EB212 MRF19125 MRF21180 J493 advanced design system
Contextual Info: Freescale Semiconductor Engineering Bulletin EB212 Rev. 0, 1/2004 Using Data Sheet Impedances for RF LDMOS Devices By: Darin Wagner INTRODUCTION This document explains the format used by Freescale for presenting LDMOS impedance information for both single - ended and push - pull devices on RF Power data

BLF645

Abstract: C4532X7R1E475MT020U RF35
Contextual Info: BLF645 Broadband power LDMOS transistor Rev. 01 — 27 January 2010 Product data sheet 1. Product profile 1.1 General description A 100 W LDMOS RF power push-pull transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1400 MHz. The

Contextual Info: BLF645 Broadband power LDMOS transistor Rev. 01 — 27 January 2010 Product data sheet 1. Product profile 1.1 General description A 100 W LDMOS RF power push-pull transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1400 MHz. The

LM780L05ACM-ND

Abstract: PTFB193408SVV1R250XTMA1
Contextual Info: PTFB193408SV Thermally-Enhanced High Power RF LDMOS FET 340 W, 30 V, 1930 – 1990 MHz Description The PTFB193408SV is a 340-watt symetrical push-pull LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1930 to 1990 MHz frequency band. Features include input

NEM091803S-28

Abstract: transistor NEC D 880 NEC JAPAN
Contextual Info: DATA SHEET LDMOS FIELD EFFECT TRANSISTOR NEM091803S-28 N-CHANNEL SILICON POWER LDMOS FET FOR 180 W UHF-BAND PUSH-PULL POWER AMPLIFIER DESCRIPTION The NEM091803S-28 is an N-channel enhancement-mode lateral diffused MOS FET designed for 0.8 to 1.0 GHz applications, such as, GSM/EDGE/N-CDMA cellular base station.

Contextual Info: polyfet rf devices SK204 General Description Silicon VDMOS and LDMOS transistors designed specifically SILICON GATE ENHANCEMENT MODE for broadband RF applications. RF POWER VDMOS TRANSISTOR Suitable for Military Radios, Cellular and Paging Amplifier Base 25 Watts Push - Pull

BLF861A

Abstract: BLF861 TRANSISTOR 318
Contextual Info: BLF861A UHF POWER LDMOS TRANSISTOR DESCRIPTION: The ASI BLF861A ia a Silicon Nchannel enhancement mode lateral DMOS push-pull transistor. PACKAGE STYLE .385X.850 4LFG FEATURES: • Internal input-output matching • Omnigold Metalization System MAXIMUM RATINGS