LDMOS DIGITAL Search Results

HP RF TRANSISTOR GUIDE

Abstract: MRF286 MRF210305 MHL9838 mrf284 Curtice linear amplifier 470-860 Base Station Drivers motorola MRF High frequency MRF transistor
Contextual Info: SG384/D REV 7 RF LDMOS Infrastructure Technology Selector Guide Motorola RF LDMOS Product Family As digital standards increasingly dominate the wireless communication market, Motorola’s RF LDMOS technology has become the industry’s technology of choice due to its superior linearity, gain and efficiency characteristics. Motorola’s RF LDMOS

Contextual Info: NXP UHF power LDMOS transistor BLF884P S 350 W LDMOS RF power transistor for digital & analog transmitters High efficiency and excellent ruggedness make this 350 W LDMOS power transistor an ideal component for UHF broadcast transmitters and industrial applications.

LDMOS NONLINEAR

Abstract: APP3617 DS1870 DS4303 DS4305 AN3617 LDMOS digital LDMOS
Contextual Info: Maxim > App Notes > DIGITAL POTENTIOMETERS WIRELESS, RF, AND CABLE Keywords: DS1870, DS4303, DS4305, LDMOS, Power Amplifier, RF, Bias Sep 16, 2005 APPLICATION NOTE 3617 Using the DS4303 to Bias LDMOS RF Power Amps Abstract: LDMOS RF power amps dominate the GSM and CDMA base-station markets by providing excellent

BLF4G22-45

Abstract: BLF4G10-120 BLF4G22-100 BLF4G22-130 digital predistortion dpd 2carrier WCDMA
Contextual Info: High efficiency LDMOS 4th Generation LDMOS boosts fuels 3G basestations performance of W-CDMA amplifiers To support high efficiency requirements of basestation power amplifiers, Philips 0.6 µm 4th generation LDMOS technology is a significant step forward compared to earlier 0.8 µm technologies, with a 50% higher

ne554

Abstract: NE55410GR NE55410GR-T3-AZ TL12 TL13 TL15
Contextual Info: LDMOS FIELD EFFECT TRANSISTOR NE55410GR N-CHANNEL SILICON POWER LDMOS FET FOR 2 W + 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER DESCRIPTION The NE55410GR is an N-channel enhancement-mode LDMOS FET designed for driver 0.1 to 2.6 GHz PA, such as, cellular base station amplifier, analog/digital TV-transmitters, and the other PA’s. This product has two different

Contextual Info: LDMOS FIELD EFFECT TRANSISTOR NE55410GR N-CHANNEL SILICON POWER LDMOS FET FOR 2 W + 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER DESCRIPTION The NE55410GR is an N-channel enhancement-mode LDMOS FET designed for driver 0.1 to 2.6 GHz PA, such as, cellular base station amplifier, analog/digital TV-transmitters, and the other PA’s. This product has two different

Contextual Info: NXP UHF/DVB-T power LDMOS transistor BLF888A S The most powerful LDMOS broadcast transistor delivering 125 W output power Designed for broadband operation (470 and 860 MHz), this LDMOS transistor boasts one-octave wideband operation, extremely good ruggedness, very high output power, high efficiency, high

LDU60

Abstract: ldmos MRF373A dvb-t transmitters MRF37 LDU60-R
Contextual Info: LDU60-R 80W pep –27dBc LDMos Technology Amplifier Designed for analog and digital TV transposers and transmitters, this amplifier incorporates microstrip technology and single end LDMos Devices to enhance ruggedness and reliability. • • • • • •

dvb-t transmitters

Abstract: 80w audio amplifier with tone control BLF878 LDU661C amplifier 400W RF Amplifier 500w M2.5 torque settings 100w audio amplifier 2 x 20w amplifier 400w amplifier
Contextual Info: LDU661C 600W pep –27dBc min LDMOS Technology Designed for analog and digital TV transposers and transmitters, this amplifier incorporates micro-strip technology and push-pull LDMOS to enhance ruggedness and reliability. Patented bias control and matching circuit.

ldmos nec

Contextual Info: DATA SHEET LDMOS FIELD EFFECT TRANSISTOR NE55410GR N-CHANNEL SILICON POWER LDMOS FET FOR 2 W + 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER DESCRIPTION The NE55410GR is an N-channel enhancement-mode LDMOS FET designed for driver 0.1 to 2.6 GHz PA, such as, cellular base station amplifier, analog/digital TV-transmitters, and the other PA’s. This product has two different

NE55410GR-T3-AZ

Abstract: TL15 NE55410GR NE55410 ldmos nec
Contextual Info: DATA SHEET LDMOS FIELD EFFECT TRANSISTOR NE55410GR N-CHANNEL SILICON POWER LDMOS FET FOR 2 W + 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER DESCRIPTION The NE55410GR is an N-channel enhancement-mode LDMOS FET designed for driver 0.1 to 2.6 GHz PA, such as, cellular base station amplifier, analog/digital TV-transmitters, and the other PA’s. This product has two different

ldmos nec

Contextual Info: DATA SHEET LDMOS FIELD EFFECT TRANSISTOR NE55410GR N-CHANNEL SILICON POWER LDMOS FET FOR 2 W + 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER DESCRIPTION The NE55410GR is an N-channel enhancement-mode LDMOS FET designed for driver 0.1 to 2.6 GHz PA, such as, cellular base station amplifier, analog/digital TV-transmitters, and the other PA’s. This product has two different

ldu45

Abstract: power 470-860mhz w MRF9060 MRF9060 equivalent
Contextual Info: LDU45 45W LDMos Technology Amplifier Designed for analog and digital TV transposers and transmitters, this amplifier incorporates microstrip technology and single end LDMos Devices to enhance ruggedness and reliability. • • • • • • • • •

LDL8

Abstract: PTF141501A 200w AUDIO AMPLIFIER 200w audio power amplifier 200W PUSH-PULL LDL80 LDMOS digital
Contextual Info: LDL80 80W DAB LDMos Technology Designed for Digital Audio Broadcasting, this amplifier incorporates microstrip technology and push-pull LDMos Devices to enhance ruggedness and reliability. • • • • • • • • 1450 - 1500 MHz 28 ÷32 V 30V Nominal

dvb-t transmitters

Abstract: GR00363 LDMOS 15w MRF9030 LDU25-R ldmos
Contextual Info: LDU25-R 30W pep –27dBc LDMos Technology Designed for analog and digital TV transposers and transmitters, this amplifier incorporates microstrip technology and single-end LDMos Devices to enhance ruggedness and reliability. • • • • • • • •

dvb-t transmitters

Abstract: LDMOS 15w GR00363 LDU25 power 470-860mhz w MRF9030
Contextual Info: LDU25 30W pep –27dBc LDMos Technology Designed for analog and digital TV transposers and transmitters, this amplifier incorporates microstrip technology and single-end LDMos Devices to enhance ruggedness and reliability. • • • • • • • • •

dvb-t transmitters

Abstract: MRF9060 LDMOS 15w Res-Ingenium
Contextual Info: LDV75M-R 75W LDMos Technology Amplifier Designed for analog and digital TV transposers and transmitters, this amplifier incorporates microstrip technology and single end LDMos Devices to enhance ruggedness and reliability. • 170 - 230 MHz • 28 ÷32 V 30V Nominal

LDV75M

Abstract: LDV75M-R LDMOS 15w MRF9060 ldmos
Contextual Info: LDV75M-R 75W LDMos Technology Amplifier Designed for analog and digital TV transposers and transmitters, this amplifier incorporates microstrip technology and single end LDMos Devices to enhance ruggedness and reliability. • 170 - 230 MHz • 28 ÷32 V 30V Nominal

LDU05M-R

Abstract: LDU05 power 470-860mhz w MRF282SR1 MRF282S
Contextual Info: LDU05M-R 5W LDMos Technology Designed for analog and digital TV transposers and transmitters, this amplifier incorporates microstrip technology and single end LDMos Devices to enhance ruggedness and reliability. • • • • 470 - 860 MHz 28 ÷32 V 30V Nominal

5.1 audio power amplifier 400w

Abstract: MRFA 2604 LDU400C LDU400C-R amplifier 400W MRF377 RF amplifier 400W 300w rf amplifier LDMOS digital GR002
Contextual Info: LDU400C-R 400W pep –27dBc min LDMOS Technology Designed for analog and digital TV transposers and transmitters, this amplifier incorporates microstrip technology and push-pull LDMOS to enhance ruggedness and reliability. • • • • • • • • •

MRF372

Abstract: power 470-860mhz w LDU300 ING01 dvb-t transmitters HEATSINK PASTE WPS
Contextual Info: LDU300 300W peak sync LDMOS Technology Designed for analog and digital TV transposers and transmitters, this amplifier incorporates microstrip technology and push-pull LDMOS to enhance ruggedness and reliability. • • • • 470 - 860 MHz 28 ÷32 Volt 32 Nominal

Contextual Info: NXP 50 V LDMOS RF power transistors BLF881x and BLF888A Digital broadcasting at its best Operating between 470 and 860 MHz, the BLF881 driver and BLF888A (final) LDMOS transistor line-ups deliver one-octave wideband operation, excellent ruggedness, very high output power

dvb-t transmitters

Abstract: LDU05 LDU05M-R transposers LDU05M MRF282SR1 AMPLIFIER 5W
Contextual Info: LDU05M-R 5W LDMos Technology Designed for analog and digital TV transposers and transmitters, this amplifier incorporates microstrip technology and single end LDMos Devices to enhance ruggedness and reliability. • • • • 470 - 860 MHz 28 ÷32 V 30V Nominal

LDU300

Abstract: MRF372 LDMOS digital power 470-860mhz w thermal compound wps PAG24
Contextual Info: LDU300 300W peak sync LDMOS Technology Designed for analog and digital TV transposers and transmitters, this amplifier incorporates microstrip technology and push-pull LDMOS to enhance ruggedness and reliability. • • • • 470 - 860 MHz 28 ÷32 Volt 32 Nominal