LD 2 UE Search Results

4205C

Contextual Info: UNCONTROLLED DOCUMENT Ui LD r- ru o o Ln LD LD IÜ a ID o C3 ru REV. LCM-S01 602DTR/M-2 PRELIM INARY IN P / N DIR 66.00 [2.5S8H cr> i\ PART NUMBER SC:Q. 75 56.00 [2.205] 54.75 [2.156] H EA T SEAL. 5.00 110,197] 5.63 [0.221] 52.00 [2.047] V A 7.00 CO.2 7 6 ]

Contextual Info: UNCONTROLLED DOCUMENT REV, Ui LD 66.00 [ 2 .5 9 8 ] r^ OJ 5 6.0 0 [2 ,2 0 5 ] 5 4 .7 5 CD O Ln A LD LD ^ [2 .15 6 ] H E A T REV. L C M -H 0 1 602DTR/M A E.C.N. NUMBER AND REVISION COMMENTS DATE E.C.N, # 1 1 1 4 8 . 0 2 .1 3 .0 7 5.00 C0.197] SE A L . 5 .6 3

Contextual Info: PART NUMBER UNCONTROLLED DOCUMENT REV. LCM-S01602DTF/M-1 66.00 [2 .5 9 8 ] fu ! ? 0 O 1I I I O O ld ld LD £ è O C3 III I O in ^ o D ru 56.00 [2,205] 5 4.75 [2.156] H EA T SEAL. 5.00 CO,197] 5.63 [0.221] 52.00 [2,047] V.A, - 7.00 CO.2 7 6 ] 46.86 Cl.8 4 5 ] -

Contextual Info: UNCONTROLLED DOCUMENT PART N U M B E R REV. LCM-SQ1 6 02 D W F/M — B ru c5 I I o Ln LD <=> I I o LD ^ PRELIM INARY IN P / N DIR 66.00 [ E . 5 S 8 ] U i LD 5 6.0 0 [2 ,2 0 5 ] 5 4 .7 5 [2 .15 6 ] H E A T 5.00 C0.197] SE A L . 5 2.00 [2 ,0 4 7 ] V A ru 5 .6 3

Contextual Info: Semiconductor Laser LNC701PS GaAlAs Semiconductor Laser ø5.6 +0 –0.025 ø4.3±0.1 ø3.55±0.1 Unit : mm 2 ø1.0 min. 0.4±0.1 LD X Stable single horizontal mode oscillation 1.0±0.1 2.3±0.2 1.27 0.25 Long lifetime, high reliability Kovar glass LD pellet

Contextual Info: Semiconductor Laser LNC802PS GaAlAs Semiconductor Laser ø5.6 +0 –0.025 ø4.3±0.1 ø3.55±0.1 Unit : mm 2 ø1.0 min. 0.4±0.1 LD X Stable single horizontal mode oscillation 1.0±0.1 2.3±0.2 1.27 0.25 Long lifetime, high reliability Kovar glass LD pellet

501602

Abstract: 300D 75VDD
Contextual Info: UNCO NTRO LLED DO CU M EN T SC:Q. 75 PART NUMBER REV. LC M -S 01 6 Q 2 D T R /M -3 V LD 6 6 .0 0 [2 .5 9 8 1 ^1" 5 6 .0 0 [ 2 ,2 0 5 ] 5.00 5 4 .7 5 [2 .1 5 6 1 5 .6 3 [0 .2 21 1 7.00 tO .2 7 6 1 C3 LD 5 2 .0 0 — 3 & S S i_i a rl g PRELIM IN ARY IN P / N DIR

LNC707PS

Contextual Info: Semiconductor Laser LNC707PS High Power Output Semiconductor Laser ø5.6 +0 –0.025 ø4.3±0.1 ø3.55±0.1 Overview ø1.0 min. 3 Reference plane Reference plane ø1.2max. 3-ø0.45 2 Stable single horizontal mode oscillation 1 3 1: LD Anode 2: Common Case

ic 4933

Abstract: 2u 25 d3764 DRG 118/A
Contextual Info: □RAWING SHEET No,: D376^ 2 OF 2 I IF IN DOUBT - -57,30 -3,60 ASK | g NOT TO S C A LE THIRD ANGLE PROJECTION 0.00 - 7,40 -0,20 ±0,05 4,20 ALL DIMENSIONS IN mm - 3» -4,20 ±0,05- ±0,05 CN (S LD CN 1,778 ±0,050 -55,118

irfl014

Abstract: irfl014 fa
Contextual Info: PD 9.860A International SS Rectifier IRFL014 HEXFET Power MOSFET • • • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Ease of Paralleling Simple Drive Requirements Vdss - 60V ^DS on = 0 -2 0 Î2 lD = 2 .7 A

threshold switch

Abstract: OM02 DMP16 HJM2123M NJM2112 NJM2120 NJM2123 NJM2123D NJM2123M NJM2123V
Contextual Info: NJM2123 DUAL OPERATIONAL AMPLIFIER WITH SWITCH • GENERAL DESCRIPTION PACKAGE OUTLINE The NJM 2123 is a operational am plifier with analog sw itch 2 circuit o f 2-input/l-output . It is applicable to the audio part for Video (VTR, LD.) and the Car-stereo.

Contextual Info: S IE M E N S Si-MMIC-Amplifier BGA425 in SIEGET 25-Technology Preliminary Data # # # # # # # Multifunctional Case. 50 D. Block LNA/MIX Unconditionally stable Gain |s21f =18.5 dB at 1.8 GHz (appl.1) Gain |s 21|2 = 2 2 dB at 1.8 GHz (appl.2) IP3out = +7 dBm at 1.8 GHz (VD=3V,lD=9.5mA)

157D

Abstract: SMA51
Contextual Info: UNCONTROLLED DOCUMENT PART NUMBER S C '.0.50 REV. LD S-SM A51 12RI-TR I 3.15 0.60 PRELIM INARY IN P / N [0 .0 2 4 ] DIR [0 .1 2 4 ] 1 2 .2 5 ELECTRO—OPTICAL CHARACTERISTICS Ta =25'C [ 0 .4 8 2 : PARAMETER 1.40 [ 0 .0 5 5 ] PIN 10 "I /— P I N *“ ~~\ 6

Contextual Info: Semiconductor Laser LNC705PS GaAlAs Semiconductor Laser ø5.6 +0 –0.025 ø4.3±0.1 ø3.55±0.1 Unit : mm 2 ø1.0 min. LD 110˚±1˚ 0.4±0.1 Features Stable single horizontal mode oscillation PD 1 Junction plane M Di ain sc te on na tin nc ue e/ d Low threshold current

670 nm

Contextual Info: Semiconductor Laser LNCR01PS Red Light Semiconductor Laser ø5.6 +0 –0.025 ø4.3±0.1 ø3.55±0.1 Unit : mm 2 110˚±1˚ LD Low threshold current PD 1 Junction plane M Di ain sc te on na tin nc ue e/ d High output operations with oscillating wavelength of 685 nm :

Contextual Info: Photo IC PNA4S87F Photo IC for LD power monitors For record system optical disc apparatus 3 2 Unit: mm 1.5 1 4.9±0.1 φ0.7 Detector • Features M Di ain sc te on na tin nc ue e/ d • High-speed response supports 40 times normal speed (settling time < 10 ns)

Contextual Info: Semiconductor Laser LNC704PS GaAlAs Semiconductor Laser ø5.6 +0 –0.025 ø4.3±0.1 ø3.55±0.1 Unit : mm 2 ø1.0 min. LD 110˚±1˚ 0.4±0.1 Features Stable single horizontal mode oscillation 3 Reference plane 2.3±0.2 1.27±0.07 0.25 1.0±0.1 Reference slot

Contextual Info: Semiconductor Laser LNCQ02PS Red Light Semiconductor Single Mode Laser ø5.6 +0 –0.025 ø4.3±0.1 ø3.55±0.1 Unit : mm 2 ø1.0 min. LD 110˚±1˚ 0.4±0.1 Features Low astigmatic difference PD 1 Junction plane M Di ain sc te on na tin nc ue e/ d Oscillating wavelength : 655 nm

Contextual Info: Semiconductor Laser LNC702PS GaAlAs Semiconductor Laser ø5.6 +0 –0.025 ø4.3±0.1 ø3.55±0.1 Unit : mm 2 ø1.0 min. LD 110˚±1˚ 0.4±0.1 Features Stable single horizontal mode oscillation 3 Reference plane 2.3±0.2 1.27±0.07 0.25 1.0±0.1 Reference slot

Contextual Info: < I CD O CD CD X > c c) CN \ ► < U_ o K Ld — LU O < CL 2 Z o *< o SS UE ce REVISIONS •CD= _ 83279 G J W 7 SEP 95 B C 0 83694J A K 2 9 APR 9 7 C C094375 TSM 2 3 MAR 9 9 NOTES / T \ RESPONSE TIME IS TYPICALLY 1 m sec FROM 10-90% OUTPUT VOLTAGE IS RATIOMETRIC TO SUPPLY VOLTAGE

laser diode toshiba

Abstract: told laser diode toshiba 650 650nm 5mw laser diode 650NM laser diode 5mw
Contextual Info: TOLD9441 MD TOSHIBA TOSHIBA LASER DAIODE InGaAlP TOLD9441 MD Lasing Wavelength : Ap = 650nm Typ. Optical Output Power : P0 = 5mW Operation Case Temperature : T e = —10~70°C Pin Connection 10 0 3 LD 0 @ PD I 1. LASER DIODE ANODE 2. LASER DIODE CATHODE

RY71

Contextual Info: 10 PART 9 N UM BER 8 D E S C R IP T IO N SEE SHEET 180220-0000 H O LD E R W ITH O U T L E N S 3 1 8 0 2 2 0- 0 0 0 1 H O LD E R W ITH L E N S 3 180222-0000 CO VER L E N S 3 O N LY NOTES: 1 M A T E R IA L S : □. C A P S : N A T U R A L COLOR P A 6 6 N Y LO N 25 % OF U U 9 4 V - 0

laser diode 30mw 660nm

Abstract: LNCQ03PS
Contextual Info: Semiconductor Laser LNCQ03PS Red Light Semiconductor Laser ø5.6 +0 –0.025 ø4.4 ø3.55±0.1 For optical control systems Unit : mm 2 Reference slot LD 1 Reference plane 2.3 1.27±0.07 0.25 ø1.0 min. Reference plane 3-ø0.45 6.5 Low astigmatic difference facilitates good concentrated light spot,

28C0236-0BW-10

Abstract: 28C0236-OBW-10 steward catalog r0101d 28C0236 28C0236-000 28C0236-0BW R0101
Contextual Info: ELE C TR IC AL TESTING FREQ UENC Y N O M IN AL MINIMUM z Z 25 MHz 538 Q 100 MHz 835 n 626 n Ld J < NOTES: Q UNLESS OTHERWISE SPECIFIED 1. WIRE: 2 n [2 0 0 nin ± 3. REF. STEWARD CORE P /N 2 8 C 0 2 3 6 -0 0 0 . A. AGILENT E4991A RF Im p e d a n c e /M a te ria l A n a ly z e r