LCLE 10 Search Results

Contextual Info: Arc SHALL NOT BE OISCLOSEO. CCFIEO DR USEO FOR PROCUREMENT OR MAMF AC TL RE WITHXIT EXPRESS WRITTEN PERMISSION -10 -12 -13 -14 -15 -IB -17 -18 -19 -20 ASSEMBLE PER CDNN TYPE MATERIAL PL20 CJ20 BJ26 BJ29 PL40 CJ40 BJ4B BJ49 UPL20 UCJ20 UBJ26 UBJ29 UPL40 UCJ40

NE553

Abstract: 5k trimpot mepco capacitor NE5539N SE5539 0405B 0581B NE5539D NE5539F SE5539F
Contextual Info: Philips Semiconductors RF Communications Products Product specification High frequency operational amplifier DESCRIPTION NE/SE5539 PIN CONFIGURATION The NE/SE5539 is a very wide bandwidth, high slew rale, monolithic operational amplifier for use in video amplifiers, RF amplifiers, and

Contextual Info: Preliminary GM72V66441ET/ELT 4 , 194,304 w o r d x 4 b i t x 4 b a n k L G S e m i c o n C o « ,L td « SYNCHRONOUS DYNAMIC RAM Description The GM72V66441ET/ELT is a synchronous dynamic random access memory comprised of 67,108,864 memory cells and logic including

transistor a6f

Abstract: Hitachi DSA00164 Nippon capacitors
Contextual Info: HB52D48GB-F 32 MB Unbuffered SDRAM Micro DIMM 4-Mword x 64-bit, 100 MHz Memory Bus, 1-Bank Module 4 pcs of 4 M × 16 components PC100 SDRAM ADE-203-1149A (Z) Rev. 1.0 Jul. 7, 2000 Description The HB52D48GB is a 4M × 64 × 1 banks Synchronous Dynamic RAM Micro Dual In-line Memory Module

Hitachi DSA00276

Abstract: Nippon capacitors
Contextual Info: HB52RF648DC-B, HB52RD648DC-B 512 MB Unbuffered SDRAM S.O.DIMM 64-Mword x 64-bit, 133/100 MHz Memory Bus, 2-Bank Module 16 pcs of 64 M × 4 components PC133/100 SDRAM ADE-203-1214A (Z) Preliminary Rev. 0.1 Oct. 20, 2000 Description The HB52RF648DC, HB52RD648DC are a 32M × 64 × 2 banks Synchronous Dynamic RAM Small Outline

B60 C100

Abstract: transistor a6f Hitachi DSA00164 Nippon capacitors
Contextual Info: HB52D88GB-F 64 MB Unbuffered SDRAM Micro DIMM 8-Mword x 64-bit, 100 MHz Memory Bus, 1-Bank Module 4 pcs of 8 M × 16 components PC100 SDRAM ADE-203-1148A (Z) Rev. 1.0 Jul. 4, 2000 Description The HB52D88GB is a 8M × 64 × 1 banks Synchronous Dynamic RAM Micro Dual In-line Memory Module

Contextual Info: HB52RF648DC-B, HB52RD648DC-B 512 MB Unbuffered SDRAM S.O.DIMM 64-Mword x 64-bit, 133/100 MHz Memory Bus, 2-Bank Module 16 pcs of 32 M × 8 components PC133/100 SDRAM E0083H40 (Ver. 4.0) Nov. 16, 2001 (K) Japan Description The HB52RF648DC, HB52RD648DC are a 32M × 64 × 2 banks Synchronous Dynamic RAM Small Outline

transistor a6f

Abstract: A6F SURFACE MOUNT Hitachi DSA00164 Nippon capacitors
Contextual Info: HB52RD168GB-F 128 MB Unbuffered SDRAM Micro DIMM 16-Mword x 64-bit, 100 MHz Memory Bus, 1-Bank Module 16 pcs of 16 M × 4 components PC100 SDRAM ADE-203-1153A (Z) Rev. 1.0 Jun. 30, 2000 Description The HB52RD168GB is a 16M × 64 × 1 bank Synchronous Dynamic RAM Micro Dual In-line Memory

Contextual Info: HB52RF648DC-B, HB52RD648DC-B 512 MB Unbuffered SDRAM S.O.DIMM 64-Mword x 64-bit, 133/100 MHz Memory Bus, 2-Bank Module 16 pcs of 32 M × 8 components PC133/100 SDRAM E0083H40 (Ver. 4.0) Nov. 16, 2001 (K) Japan Description The HB52RF648DC, HB52RD648DC are a 32M × 64 × 2 banks Synchronous Dynamic RAM Small Outline

Hitachi DSA00276

Abstract: Nippon capacitors
Contextual Info: HB52D48GB-F 32 MB Unbuffered SDRAM Micro DIMM 4-Mword x 64-bit, 100 MHz Memory Bus, 1-Bank Module 4 pcs of 4 M × 16 components PC100 SDRAM ADE-203-1149 (Z) Preliminary Rev. 0.0 Jan. 13, 2000 Description The HB52D48GB is a 4M × 64 × 1 banks Synchronous Dynamic RAM Micro Dual In-line Memory Module

Hitachi DSA00276

Abstract: Nippon capacitors
Contextual Info: HB52D88GB-F 64 MB Unbuffered SDRAM Micro DIMM 8-Mword x 64-bit, 100 MHz Memory Bus, 1-Bank Module 4 pcs of 8 M × 16 components PC100 SDRAM ADE-203-1148 (Z) Preliminary Rev. 0.0 Jan. 13, 2000 Description The HB52D88GB is a 8M × 64 × 1 banks Synchronous Dynamic RAM Micro Dual In-line Memory Module

Contextual Info: HB52D48GB-F L EO 32 MB Unbuffered SDRAM Micro DIMM 4-Mword x 64-bit, 100 MHz Memory Bus, 1-Bank Module 4 pcs of 4 M × 16 components PC100 SDRAM E0011H10 (1st edition) (Previous ADE-203-1149A (Z) Jan. 19, 2001 Description Features Pr The HB 52D48GB is a 4M × 64 × 1 banks S ynchronous Dyna mic R AM Micro Dua l In- line Memory Module

Contextual Info: HB52RD168GB-F L EO 128 MB Unbuffered SDRAM Micro DIMM 16-Mword x 64-bit, 100 MHz Memory Bus, 1-Bank Module 16 pcs of 16 M × 4 components PC100 SDRAM E0009H10 (1st edition) (Previous ADE-203-1153A (Z) Jan. 19, 2001 Description Pr The HB52RD168GB is a 16M × 64 × 1 bank Synchronous Dynamic RAM Micro Dual In-line Memory Module

Contextual Info: GMM26417228ANTG LG S em ico n Co, 16,777,216 WORDS x 64 BIT SYNCHRONOUS DYNAMIC RAM SO-DIMM Description The GMM26417228ANTG is a 16M x 64 bits Synchronous Dynamic RAM SO-DIMM which is assembled 8 pieces of 8M x 16bits Synchronous DRAMs in 54 pin TSOP II package and one 2048 bit EEPROM in 8 pin

Hitachi DSA00167

Contextual Info: HB52D88GB-F 64 MB Unbuffered SDRAM Micro DIMM 8-Mword x 64-bit, 100 MHz Memory Bus, 1-Bank Module 4 pcs of 8 M × 16 components PC100 SDRAM ADJ-203-519 (Z) ’00 . 1. 13 暫定仕様 Rev. 0.0 概要 HB52D88GB は， 128M ビット SDRAM HM5212165FTD （TSOP パッケージ）

GMM26416233

Abstract: GMM26416233CNTG
Contextual Info: LG Semicon Co.,Ltd. REVISION HISTORY /Revision 1.0: July 1998 - Add PC100,7K 2-2-2 Specifications. - Update Icc Specifications. - Change Input Test Condition from 2.8/0.0V to 2.4/0.4V. - Added post SPD Information separately (7K/7J/10K) for Modules. - Add Minimum Capacitance Value for Component.

Contextual Info: G M M 26417227A N T G LG S e m ic o n C o , 16,777,216 WORDS x 64 BIT SYNCHRONOUS DYNAMIC RAM SO-DIMM Description The GMM26417227ANTG is a 16M x 64 bits Synchronous Dynamic RAM SO-DIMM which is assembled 8 pieces of 8M x 16bits Synchronous DRAMs in 54 pin TSOP II

CL31B

Contextual Info: _ . LG . S e m ic o n . G M M2739230ET G 8,388,6os w o r d s X72b i t SYNCHRONOUS DYNAMIC RAM MODULE C o . , L td . Description Features The GMM2739230ETG is a 8M x 72bits Synchronous Dynamic RAM MODULE which is assembled 9 pieces of 8M x 8bits Synchronous DRAMs in 54 pin TSOP II

Contextual Info: GMM27317230ATG LG Semicon Co.,Ltd. Description 16,777,216 WORDS x72BIT SYNCHRONOUS DYNAMIC RAM MODULE Features The GMM27317230ATG is a 16M x 72bits Synchronous Dynamic RAM MODULE which is assembled 9 pieces of 16M x 8bits Synchronous DRAMs in 54 pin TSOP II

Hitachi DSA00167

Contextual Info: HB52D48GB-F 32 MB Unbuffered SDRAM Micro DIMM 4-Mword x 64-bit, 100 MHz Memory Bus, 1-Bank Module 4 pcs of 4 M × 16 components PC100 SDRAM ADJ-203-520 (Z) ’00. 1. 13 暫定仕様 Rev. 0.0 概要 HB52D48GB は，64M ビット SDRAM HM5264165FTT（TSOP パッケージ）を 4 個およびシリアル EEPROM

ADJ-203-524

Abstract: Hitachi DSA00171 A12H
Contextual Info: HB52RD168GB-F 128 MB Unbuffered SDRAM Micro DIMM 16-Mword x 64-bit, 100 MHz Memory Bus, 1-Bank Module 16 pcs of 16 M × 4 components PC100 SDRAM ADJ-203-524 (Z) ’00 . 2. 2 暫定仕様 Rev. 0.0 概要 HB 52 RD1 68 GB は，6 4M ビット SD RAM HM5 26 44 05 FTB （TC P パッ ケージ）を 1 6 個およびシリアル

Contextual Info: GMM27333233ANTG LG S em icon C o .,L td. 33,554,432 WORDS x72BIT SYNCHRONOUS DYNAMIC RAM M ODULE Description The GMM27333233ANTG is a 32M x 72bits Synchronous Dynamic RAM MODULE which is assembled 18 pieces of 16M x 8bits Synchronous DRAMs in 54 pin TSOP II package and one 2048 bit EEPROM

Contextual Info: DATA SHEET 128MB SDRAM SO DIMM EBS12UC6APS 16M words x 64 bits, 1 bank Description Features The EBS12UC6APS is 16M words × 64 bits, 1 bank Synchronous Dynamic RAM Small Outline Dual In-line Memory Module (SO DIMM), mounted 4 pieces of 256M bits SDRAM (EDS2516APTA) sealed in TSOP

143-PIN

Contextual Info: DATA SHEET 256MB SDRAM Micro DIMM EBS25UC8APMA 32M words x 64 bits, 1 bank Description Features The EBS25UC8APMA is 32M words × 64 bits, 1 bank Synchronous Dynamic RAM Micro Dual In-line Memory Module (Micro DIMM), mounted 8 pieces of 256M bits SDRAM sealed in µBGA package. This module