LC 945 P Search Results

Contextual Info: Spezifikation für Freigabe / specification for release Kunde / customer : Artikelnummer / part number : Bezeichnung : description : Datum / Date : 823 56 240 030 SMD size: 0603 0603 ESD Suppressor "LC" 2006-10-15 ROHS Compliant A Mechanische Abmessungen / dimensions :

D 1991 AR

Abstract: BD945
Contextual Info: BD943 BD945 BD947 _ HILIPS INTERNATIONAL SbE ]> H 7110fl2ti 0043070 SOfl PHIN SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N silicon transistors in a plastic envelope intended for use in audio output stages and general purpose amplifier applications. P-N-P complements are BD944; 946 and 948.

bd947

Abstract: b0945 BD945 m lc 945 BD943 BD944
Contextual Info: BD943 BD945 BD947 H ILIPS INTERNATIONAL _ SbE J> H 711002b 0043070 SOfl • PHIN SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N silicon transistors in a plastic envelope intended for use in audio output stages and general purpose amplifier applications. P-N-P complements are BD944; 946 and 948.

Contextual Info: Hi-Rel DC/DC CONVERTER MGDM-200 : 200W POWER Hi-Rel Grade 5:1 Low Input Voltage : 9-45 & 16-80 VDC Single Output Metallic case - 1 500 VDC Isolation • Ultra wide input range 9-45 Vdc, 16-80 Vdc • 28Vdc input compliant with MIL-STD-704A/D/F • Power up to 200 W

transistor marking 1p Z

Contextual Info: Tem ic S852T Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low-noise and high-gain broadband amplifiers at collector currents from 0.2 mA to 5 mA. Features • Low supply voltage

Z668

Abstract: ZB5CS-920-10W ZB5CS-920-10W-N
Contextual Info: Coaxial High Power Combiner 5 Way-0° 50Ω 450 to 920 MHz Maximum Ratings Operating Temperature Storage Temperature ZB5CS-920-10W Features • high power, up to 10W input power • low insertion loss, 0.4 dB typ. • good isolation, 26 dB typ. • excellent amplitude unbalance, 0.10 dB typ.

TOP 948

Abstract: S944 BDS948 m lc 945 f 948 BDS944 BDS946 USB002 c 948 W468
Contextual Info: PHILIPS IN TE RNATIONAL SbE Product specification date of issue April 1991 • 711002b 00431ÛG 33fi « P H I N 33-/7 BDS944/946/948 Data sheet status D T- PNP silicon epitaxial base power transistors DESCRIPTION PINNING - SOT223 PIN 1 2 3 4 PNP silicon epitaxial base transistors

transistor LC 945

Contextual Info: Temic S852TW Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. ^ Observe precautions for handling. M Applications For low-noise and high-gain broadband amplifiers at collector currents from 0.2 mA to 5 mA. Features • Low supply voltage

TELEFUNKEN EL 156

Contextual Info: T e m ic S822TW Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. ^ Observe precautions for handling. M Applications For low-noise and high-gain broadband amplifiers at collector currents from 0.2 mA to 5 mA. Features • Low supply voltage

Contextual Info: Aluminum Electrolytic Type / Radial Lead Type Aluminum Electrolytic Capacitors ME-WA RoHS compliance 105℃, Miniature, Long Life Series Low Impedance, High Ripple Current ● 105℃, 8,000 to 10,000hrs. ● Do not clean the capacitors using solvent.

Contextual Info: Miniature Aluminum Electrolytic Capacitors NRSH Series HIGH TEMPERATURE, EXTENDED LOAD LIFE, RADIAL LEADS, POLARIZED FEATURES • IMPROVED ENDURANCE AT HIGH TEMPERATURE RoHS up to 10,000HRS @ 105°C Compliant includes all homogeneous materials • LOW IMPEDANCE & HIGH RIPPLE CURRENT RATINGS

Contextual Info: ERICSSON ^ PTB 20095 15 Watts, 915-960 MHz Cellular Radio RF Power Transistor Description The 20095 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation across the 915 to 960 MHz frequency band. Rated at 15 watts minimum output power, it may be used for

Phototransistor L14

Abstract: SL-2341 32 SLP-836A-37 SL-2341-20 SLR-981A SLP-881A-37 SLP-255 SLR-931A SL1255 SLP881A37
Contextual Info: Magnetoresistance sensors va max V P max (mW) Vout (ittVrm*) R <Q) Width (mm) MS-0 Device 5.5 50 0.4 to 1.1 600 to 4500 3 MS-E 5.5 50 0.4 to 1.1 600 to 4500 6 MS-F-06 5.5 44 0.16 to 0.42 700 to 4500 3 MS-F-11 5.5 44 0,16 to 0.42 700 to 4500 3 Features High S/N ratio

Contextual Info: 57. SGS-THOMSON SD4017 •m RF & MICROWAVE TRANSISTORS 806-960 MHz CELLULAR BASE STATIONS GOLD METALLIZATION DIFFUSED EMITTER BALLASTING INTERNAL INPUT MATCHING DESIGNED FOR LINEAR OPERATION HIGH SATURATED POWER CAPABILITY COMMON EMITTER CONFIGURATION P o u t = 30 W MIN. WITH 7.5 dB GAIN

MGDS-150-O-J

Contextual Info: Hi-Rel DC/DC CONVERTER MGDM-150 : 150W POWER Hi-Rel Grade 5:1 Low Input Voltage : 9-45 & 16-80 VDC Single Output Metallic case - 1 500 VDC Isolation • Ultra wide input range 16-80 Vdc, 9-45 Vdc • 28Vdc input compliant with MIL-STD-704A/D/F • Industry standard half brick package

NRSH101M35V6.3x11F

Abstract: NRSH122M63V18X25F NRSH222M10V10x23F NRSH471M16V8X11 NRSH182M6.3V10x16F NRSH681M25V10x16F NRSH102M16V10x16F NRSH101M16V5x11F NRSH272M16V12.5x25F NRSH331M35V10x12.5F
Contextual Info: Miniature Aluminum Electrolytic Capacitors NRSH Series HIGH TEMPERATURE, EXTENDED LOAD LIFE, RADIAL LEADS, POLARIZED FEATURES • IMPROVED ENDURANCE AT HIGH TEMPERATURE up to 10,000HRS @ 105°C • LOW IMPEDANCE & HIGH RIPPLE CURRENT RATINGS • NEW REDUCED SIZES

Reference Information

Contextual Info: EMI/EMP Filters Glenair MIL-DTL-38999 Series III Type Filter Connector with Threaded Coupling Reference Information 4x M Holes .005 .13 H N N J Flat Front Panel Mounting L Min Back Panel Mounting K Min MIL-DTL-38999 Series III Jam Nut Panel Cutout SHELL

Contextual Info: Miniature Aluminum Electrolytic Capacitors NRSY Series REDUCED SIZE, LOW IMPEDANCE, RADIAL LEADS, POLARIZED ALUMINUM ELECTROLYTIC CAPACITORS RoHS FEATURES Compliant includes all homogeneous materials • FURTHER REDUCED SIZING • LOW IMPEDANCE AT HIGH FREQUENCY

BLX13C

Abstract: BY206 PHILIPS 4312 amplifier philips carbon film resistor 3mss HF SSB APPLICATIONS RF 28 v
Contextual Info: bSE D m 7110ÛEL □Db34Mcl 42Ô M P H I N BLX13C PHILIPS I N T E R N A T I O N A L _ H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in transmitting amplifiers operating in the h.f. and v.h.f. bands, w ith a nominal supply voltage o f 28 V . The transistor is specified fo r s.s.b. applications as linear

Contextual Info: Miniature Aluminum Electrolytic Capacitors NRE-FL Series HIGH TEMPERATURE, EXTENDED LOAD LIFE, RADIAL LEADS, POLARIZED FEATURES • HIGH VOLTAGE 6.3 ~ 250V RoHS • LOW IMPEDANCE AT 100KHz Compliant includes all homogeneous materials • LONG LIFE AT HIGH TEMPERATURE (UP TO 10,000 HOURS)

Contextual Info: Miniature Aluminum Electrolytic Capacitors NRE-FL Series HIGH TEMPERATURE, EXTENDED LOAD LIFE, RADIAL LEADS, POLARIZED FEATURES RoHS • HIGH VOLTAGE 6.3 ~ 250V Compliant • LOW IMPEDANCE AT 100KHz includes all homogeneous materials • LONG LIFE AT HIGH TEMPERATURE (UP TO 10,000 HOURS)

MHD1510

Abstract: MHD1812 015S1
Contextual Info: Multilayer Hybrid Circuit Devices MHD Series TDK Multilayer Hybrid Circuit Device MHD is produced by integrating inductors, transformers, and capacitors into a single monolithic structure by sintering. In addition, thick film resistors, transistors, and integrated circuits can be assembled onto the top of the LC structure. The M HD combines both

lcd 5421

Abstract: ANI 1015 LCD driver KS SI 3105 A KS0715 C0M30
Contextual Info: K S0715 33COM/1OOSEG DRIVER & CONTROLLER FO R STN LCD Rev. 0.1 IN TR O D U C T IO N The K S 0715 is a LC D driver LSI fo r d ot-m atrix graphic display system s. It accepts 8-bit serial or parallel display d a ta directly from a M PU and stores it in a on-chip RAM o f 6 5 x 132 bits. It

Contextual Info: Miniature Aluminum Electrolytic Capacitors NRSZ Series LOW IMPEDANCE AT HIGH FREQUENCY RADIAL LEADS, POLARIZED ALUMINUM ELECTROLYTIC CAPACITORS RoHS FEATURES Compliant includes all homogeneous materials • VERY LOW IMPEDANCE • LONG LIFE AT 105OC 2000 ~ 5000 hrs.