LC 945 P Search Results

Contextual Info: Philips Components D a ta sh e e t s ta tu s Product specification d a te o f is s u e April 1991 BDS943/945/947 NPN silicon epitaxial base power transistors PINNING - SOT223 DESCRIPTION NPN silicon epitaxial base transistors in a miniature SMD envelope SOT223 intended for general

BDS945

Abstract: m lc 945 J 3305 BDS943 BDS947 DDM317S
Contextual Info: PHILIPS INTERNATIONAL Product specification date of issue April 1991 711002b 0043175 2bl • PHIN BDS943/945/947 Data sheet status m SbE V Philips Components T -3 3-o s NPN Silicon epitaxial base power transistors DESCRIPTION PINNING - SOT223 PIN NPN silicon epitaxial base transistors

lc 945 p transistor

Abstract: transistor 2 FC 945 VISHAY MARKING SJ transistor CB 945 lc 945 p transistor BU 184
Contextual Info: VfSMAY _ S822T/S822TW ▼ Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ M Applications For low noise and high gain broadband amplifiers at collector currents from 0.2 mA to 5 mA.

lc 945 p transistor

Contextual Info: _ S852T/S852TW VfSMAY ▼ Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ M Applications For low noise and high gain broadband amplifiers at collector currents from 0.2 mA to 5 mA.

Contextual Info: Spezifikation für Freigabe / specification for release Kunde / customer : Artikelnummer / part number : Bezeichnung : description : Datum / Date : 823 56 240 030 SMD size: 0603 0603 ESD Suppressor "LC" 2006-10-15 ROHS Compliant A Mechanische Abmessungen / dimensions :

Contextual Info: Spezifikation für Freigabe / specification for release Kunde / customer : Artikelnummer / part number : Bezeichnung : description : Datum / Date : 823 56 120 050 SMD size: 0603 0603 ESD Suppressor "LC" 2006-10-15 ROHS Compliant A Mechanische Abmessungen / dimensions :

823 56 050 050

Abstract: JIS-Z-3284 JIS-Z-3284 sn lc 945 p
Contextual Info: Spezifikation für Freigabe / specification for release Kunde / customer : Artikelnummer / part number : Bezeichnung : description : Datum / Date : 823 56 050 050 SMD size: 0603 0603 ESD Suppressor "LC" 2006-10-15 ROHS Compliant A Mechanische Abmessungen / dimensions :

Contextual Info: Spezifikation für Freigabe / specification for release Kunde / customer : Artikelnummer / part number : Bezeichnung : description : Datum / Date : 823 57 120 050 SMD size: 0402 0402 ESD Suppressor "LC" 2006-10-15 ROHS Compliant A Mechanische Abmessungen / dimensions :

JIS-Z-3284

Contextual Info: Spezifikation für Freigabe / specification for release Kunde / customer : Artikelnummer / part number : Bezeichnung : description : Datum / Date : 823 57 240 030 SMD size: 0402 0402 ESD Suppressor "LC" 2006-10-15 ROHS Compliant A Mechanische Abmessungen / dimensions :

JIS-Z-3284

Contextual Info: Spezifikation für Freigabe / specification for release Kunde / customer : Artikelnummer / part number : Bezeichnung : description : Datum / Date : 823 57 240 010 SMD size: 0402 0402 ESD Suppressor "LC" 2006-10-15 ROHS Compliant A Mechanische Abmessungen / dimensions :

527H

Abstract: D 1413 transistor S822T
Contextual Info: T em ic S822T S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. A Applications For low-noise and high-gain broadband amplifiers at collector currents from 0.2 mA to 5 mA. Features

BD943

Contextual Info: BD943 BD945 BD947 _J \ _ SILICO N EPITAXIAL BASE POWER TRANSISTO RS N-P-N silicon transistors in a plastic envelope intended for use in audio output stages and general purpose amplifier applications. P-N-P complements are BD944; 946 and 948.

D 1991 AR

Abstract: BD945
Contextual Info: BD943 BD945 BD947 _ HILIPS INTERNATIONAL SbE ]> H 7110fl2ti 0043070 SOfl PHIN SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N silicon transistors in a plastic envelope intended for use in audio output stages and general purpose amplifier applications. P-N-P complements are BD944; 946 and 948.

Contextual Info: SUNCON Aluminum Electrolytic Capacitors 1051C, 8.000 to 10.OOOhrs. • Do not clean the capacitors using solvent. • • Specifications Condition Items Rated volta ge V Surge vo lta g e (V) Specifications Room tem perature Category temperature range fC )

E60389

Abstract: LC-04A LC-04B LC-04T LCP-04 LR20812 SLC22-20
Contextual Info: Crimp 5.08mm LC CONNECTOR Disconnectable Crimp style connectors .200" pitch Features –––––––––––––––––––––––– • Anti-misinsertion feature The plug and header are polarized, thus preventing misinsertion of the connector.

Contextual Info: SUNCON o> Q ?• g i. Q. -n 3 m a • 10 5 t!, 8,000 to 10.OOOhrs. • Do not clean the capacitors using solvent. 3 * n ■ Specifications Ite m s C o n d itio n Rated voltage V) Surge voltage (V) S p e c ific a tio n s CE-BE CE-BD CE-BS CE-BSS CE-FE Room temperature

Contextual Info: Hi-Rel DC/DC CONVERTER MGDM-200 : 200W POWER Hi-Rel Grade 5:1 Low Input Voltage : 9-45 & 16-80 VDC Single Output Metallic case - 1.500 VDC Isolation • Ultra wide input range 9-45 Vdc, 16-80 Vdc • 28Vdc input compliant with MIL-STD-704A/D/F • Power up to 200 W

Contextual Info: Hi-Rel DC/DC CONVERTER MGDM-200 : 200W POWER Hi-Rel Grade 5:1 Low Input Voltage : 9-45 & 16-80 VDC Single Output Metallic case - 1 500 VDC Isolation • Ultra wide input range 9-45 Vdc, 16-80 Vdc • 28Vdc input compliant with MIL-STD-704A/D/F • Power up to 200 W

MGDS-200-H-I

Abstract: MGDM-200
Contextual Info: Hi-Rel DC/DC CONVERTER MGDM-200 : 200W POWER Hi-Rel Grade 5:1 Low Input Voltage : 9-45 & 16-80 VDC Single Output Metallic case - 1 500 VDC Isolation • Ultra wide input range 9-45 Vdc, 16-80 Vdc • 28Vdc input compliant with MIL-STD-704A/D/F • Power up to 200 W

MGDS-75-H-E

Abstract: MGDS-75-O-E MGDS-75-H-C MGDS-75-H-J thermaflo 424800B0000 MGDS-75-O-B MGDS-75-H-F GAIA MGDS-75-H-E MGDS-75-O-I MGDM-75
Contextual Info: Hi-Rel DC/DC CONVERTER MGDM-75 : 75W POWER Hi-Rel Grade 5:1 Ultra Wide Input Single Output Metallic case - 1.500 VDC Isolation • Ultra wide input range 16-80 Vdc, 9-45 Vdc • 28Vdc input compliant with MIL-STD-704A/D/F • Industry standard quarter brick package

Z668

Abstract: power combiner
Contextual Info: Coaxial High Power Combiner 5 Way-0° 50Ω 450 to 920 MHz Maximum Ratings Operating Temperature Storage Temperature ZB5CS-920-10W Features • high power, up to 10W input power • low insertion loss, 0.4 dB typ. • good isolation, 26 dB typ. • excellent amplitude unbalance, 0.10 dB typ.

transistor marking 1p Z

Contextual Info: Tem ic S852T Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low-noise and high-gain broadband amplifiers at collector currents from 0.2 mA to 5 mA. Features • Low supply voltage

FC03

Abstract: MGDS-75-H-B
Contextual Info: Hi-Rel DC/DC CONVERTER MGDM-75 : 75W POWER Hi-Rel Grade 5:1 Ultra Wide Input Single Output Metallic case - 1.500 VDC Isolation • Ultra wide input range 16-80 Vdc, 9-45 Vdc • 28Vdc input compliant with MIL-STD-704A/D/F • Industry standard quarter brick package

Contextual Info: Coaxial High Power Combiner 5 Way-0° 50Ω 450 to 920 MHz Maximum Ratings Operating Temperature Storage Temperature ZB5CS-920-10W Features • high power, up to 10W input power • low insertion loss, 0.4 dB typ. • good isolation, 26 dB typ. • excellent amplitude unbalance, 0.10 dB typ.