LC 2581 V Search Results

Contextual Info: IDT54/74FCT138 IDT54/74FCT138A IDT54/74FCT138C FAST CMOS 1-OF-8 DECODER WITH ENABLE Integrated Device Technology, Inc* FEATURES: DESCRIPTION: • • • • The IDT54/74FCT138/A/C are 1-of-8 decoders built using an advanced dual metal CMOS technology. The IDT54/

ES771

Contextual Info: I N T E G R A T E D DEVI CE SflE D Integrated Device Technology, Inc. • 40 2 5 7 7 1 DO l O b M l FAST CMOS 1-OF-8 DECODER WITH ENABLE ifib ■ IDT IDT54/74FCT138 IDT54/74FCT138A IDT54/74FCT138C FEATURES: DESCRIPTION: • IDT54/74FCT138 equivalent to FAST speed

Contextual Info: FAST CMOS 1-0F-8 DECODER WITH ENABLE Integrated Device Technology, Inc, DESCRIPTION: FEATURES: The IDT54/74FCT138/A/C are 1-of-8 decoders built using advanced CEMOS , a dual metal CMOS technology. The IDT54/74FCT138/A/C accept three binary weighted inputs

5A/ESD 138C

Contextual Info: FAST CMOS 1-OF-8 DECODER IDT54/74FCT138 IDT54/74FCT138A IDT54/74FCT138C In tegrated D evice T ec h n o lo g y, Inc. FEATURES: DESCRIPTION: • IDT54/74FCT138 equivalent to FAST speed The IDT54/74FCT138/A',C are 1-of-8 decoders built using advanced CEMOS™ , a dual metal CM OS technology. The

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistor MPS6428 NPN Silicon COLLECTOR 3 1 EMITTER MAXIMUM RATINGS Rating C ollector-Em itter Voltage C ollector-Base Voltage Em itter-Base Voltage Symbol Value Unit v CEO 50 Vdc VCBO 60 Vdc v EBO 6.0 Vdc Collector Current — Continuous

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistor MPS6428 NPN Silicon COLLECTOR 3 1 EMITTER M AXIM UM RATINGS Rating Symbol Value Unit C ollector-E m itter Voltage VCEO 50 Vdc C ollector-Base Voltage VCBO 60 Vdc E m itter-B ase Voltage v EBO 6.0 Vdc

D45VH7

Abstract: D45VH D45VH1 D45VH4 D44VH D45VH10
Contextual Info: Power Transistore F ile N u m b e r 15.24 D45VH Series Silicon P-N-P Transistors Complementary to the D44VH Serles Features: • Fast S w itching ts < 500 ns resistive t f < 100 ns • Low V 'c p jjg f < 1.0V @ IC = 8A TERMINAL DESIGNATIONS The D45VH-series of s ilicon p-n-p pow er transistors are

c 2579 power transistor

Abstract: hf power transistor NPN c 2579 transistor
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor Designed for 26 Volt UHF large-signal, common emitter, Class AB linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 8 0 0 -9 6 0 MHz.

Contextual Info: February 1988 MM54HCT00/MM74HCT00 Quad 2 Input NAND Gate General Description The MM54HCT00/MM74HCT00 are NAND gates fabricated using advanced silicon-gate CMOS technology which pro­ vides the inherent benefits of CMOS— low quiescent power and wide power supply range. These devices are input and

transistor D 2581

Abstract: ERIE CAPACITORS TYPE K ERIE CAPACITORS N5060 erie .33 400 Erie TRIMMER CAPACITOR CAPACITOR MURATA
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line N P N Silicon RF Pow er Transistor D e sign e d for 12.5 Volt U H F large-signal, com m on emitter, c la s s - C amplifier applications in industrial and commercial F M equipment operating to 520 MHz. • Specified 12.5 Volt, 512 M H z Characteristics

lucas 953048

Abstract: d0352 MARKING 2581 ups 2581 v DD3520 DD3520A DD3573 DD3573A BSAU151
Contextual Info: LUCAS STABILITY ELEK LTD öl D • SbG7013 8 lc , .°_0 0 . l 7 _ _ . p _ S IL IC O N D IF F U S E D J U N C T IO N IN - L IN E R E C T IF IE R 50 - 5 0 0 V T R A N S IE N T R E V E R S E V O L T A G E ÜGD0Ü37 r b «LUCB DD3520 DD3520A DD3573 DD3S73A y The rectifiers are silicon diffused junction, am bient rated devices w ith a solid rectan­

k1507

Abstract: K1663 K1507 MOSFET 90t03p 25k956 2SK956 2SK1661 2SK1507 2SK1388 1n05
Contextual Info: FUJI G l T L t lC s ï r i jg û E C O L LH ER SEMICONDUCTOR INC MAE D • 5 5 3 6 7 ^ 5 0 Q 0 1 Ô 0 2 DbM « C O L Power MOSFET Advantages: • F-l Series • F-ll Series Low RDS on VGS + /- 30V Reduced turn off time High avalanche ruggedness VGS + /- 30V, Reduced turn

MRF342

Abstract: transistor D 2581 RF340
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF342 The RF Line 24 W 1 0 0 -1 5 0 MHz R F POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR NPN S IL IC O N . . d e s ig n e d p rim a rily fo r use in V H F a m p lifie rs w ith a m p litu d e m o d u la tio n and

74ALS29863

Contextual Info: PRODUCT PREVIEW SN54ALS29863, SN54ALS29864 SN74ALS29863, SN74ALS29864 9-BIT BUS TRANSCEIVERS WITH 3 STATE OUTPUTS D 2 9 1 5, JA N U A R Y 1 9 8 6 SN54ALS&#39; . . - JT PACKAGE SN74ALS&#39; . . . DW OR NT PACKAGE Functionally Equivalent to AM 29863 and AM 29864 TOP VIEW

Contextual Info: January 1988 MM54HC125/MM74HC125 MM54HC126/MM74HC126 TRI-STATE Quad Buffers General Description Features These are general purpose TRI-STATE high speed non-inverting buffers utilizing advanced silicon-gate CMOS tech­ nology. They have high drive current outputs which enable

TLC2721

Abstract: 272AI 272BC TLC2721D 272C DIP D3138 277 op LC277 272CP tlc27
Contextual Info: TLC272, TLC272A, TLC272B, TLC277 LinCMOS PRECISION DUAL OPERATIONAL AMPLIFIERS D3138, O CTO BER 1 9 8 7 - R E V IS E D O CTO BER 1990 • • • • Trimmed Offset Voltage: TLC277 . . . 500 /*V Max at 25 °C, Vqd - 5 V J G , OR P P A C K A G E TO P V IEW ]

thm 6043

Abstract: ull 2803
Contextual Info: I C S R 13 MIL-C-39003/01 M allorY Solid Tantalum Capacitors Hermetically Sealed GENERAL SPECIFICATIONS Graded Failure Rates Operating Temperature: -55 'C to +125 C (With proper derating) Voltage Range: 6 to 100 WVDC @ 85°C Reverse Voltage (non-continuous):

idt39c10

Contextual Info: Integrated Device Technology, Inc. 12-BIT CMOS MICROPROGRAM SEQUENCER FEATURES: • microprogram sequencers are intended for use in controlling th e se q u e n ce of m ic ro in s tru c tio n s e xe cu te d in the microprogram memory. The IDT39C10s provide several

IDT39C10

Abstract: pc 2581 v micro pc 2581 IDT39C10B lifo stack S1QB
Contextual Info: INTEGRATE] DEVICE SflE D 12-BIT CMOS MICROPROGRAM SEQUENCER • 4BES771 DDlOflBZ 735 ■ IDT IDT39C10B IDT39C10C ■ 4 ct - l 7 - S \ microprogram sequencers are intended for use in controlling the sequence of m icroinstructions executed in the microprogram memory. The IDT39C10s provide several

Contextual Info: TLC274, TLC274A, TLC274B, TLC274Y, TLC279 LinCMOS PRECISION QUAD OPERATIONAL AMPLIFIERS SLOSD92B - SEPTEMBER 1987 - REVISED AUGUST 1994 • ■ • Trimmed Offset Voltage: TLC279. . . 900 mV Max at 25°C, VDD = 5 V I I • Input Offset Voltage D rift. . . Typically

TRANSISTOR BH 4216

Abstract: SCROLLING LED DISPLAY CIRCUIT diagram 8x 8 led dot matrix annunciator hl 4020 LR 1737 R HCD66727A03 HCD66727A03BP HCD66727A04 HCD66727A04BP
Contextual Info: HD66727 Low-Power Dot-Matrix Liquid Crystal Display Controller/Driver with Key Scan Function HITACHI A D E -2 0 7 -3 1 1 (Z ) '9 9 .9 R e v . 0 .0 Description The HD66727, dot-matrix liquid crystal display controller and driver LSI incorporating a key scan

A31-1

Contextual Info: TEXAS INSTR ASIC/MEMORY 77C D • 0^1725 G0M0Ö41 =1 TM4256FL8, TM4256GU8, TM4257FL8, TM4257GU8 262,144 BY 8 BIT DYNAMIC RAM MODULES ADVANCE INFORMATION ISEO NOVEMBER 1985 OCTOBER 1985 - REVISEI T M 4 2 5 .F L 8 . . . L SINGLE-IN-LINE PACKAGE 2 6 2 ,1 4 4 X 8 Organization

Bt 2313

Abstract: AU 6256 bt 1488 22202 capacitor 344 21225 3429 vectron Lowpass Filter 3 GHz 10393 making 7136 1004 BT 816 transistor
Contextual Info: Company Overview Dielectric Laboratories, Inc. DLI is your global partner for application specific microwave and millimeter wave components serving customers in fiber optic, wireless, medical, transportation, semiconductor, space, avionics and military markets. With over 35 years of

Contextual Info: SED1220 LCD Controller Driver Technical Manual S-MOS Systems, Inc. August, 1996 Version 1.0 S-MOS Systems, Inc. »2460 North First Street • San Jose, CA 95131 »Tel: 408 922-0200 • Fax: (408) 922-0238 7 cJ3eclOti Q003EÛ2 141 THIS PAGE INTENTIONALLY BLANK