LB-TO TRANSISTOR Search Results

D9326

Abstract: BD9329
Contextual Info: 4.75V to 18V, 2A/3A/4A 1ch Buck Converter Integrated FET BD9325FJ-LB BD9326EFJ-LB BD9327EFJ-LB ●General Description This is the product guarantees long time support And long life cycle in Industrial market. The BD9325FJ-LB, BD9326EFJ-LB and BD9329EFJ -LB are step-down regulators that integrate a low

TPS606

Abstract: TLN104 TPS605
Contextual Info: TO SHIBA TPS606,TPS606 LB TOSHIBA PHOTO TRANSISTOR TAPE, CARD READERS SILICON NPN EPITAXIAL PLANAR TPS606, TPS606 (LB) Unit in mm TPS606 PRINTER, TERMINAL OPTO-ELECTRONIC SWITCH Micro-package (epoxy resin package) Double end type : TPS606 DIP type : TPS606 (LB)

Contextual Info: 2.54mm .100" Pitch Transistor Socket Sockets and Edge Connectors FEATURES AND SPECIFICATIONS E Features and Benefits Mechanical Contact Insertion Force: 681g (1.51 lb) max. Contact Retention to Housing: 3.63kg (8 lb) min. These 3-circuit transistor sockets are preassembled and ready

Contextual Info: Datasheet 4.5V to 25V Input, 1ch Synchronous Buck DC/DC Controller BD95601MUV-LB ●Description BD95601MUV-LB is a high current buck regulator that produces low output voltage 0.75V to 2.0V from a wide input voltage range (4.5V to 25V). High efficiency is

toshiba 4b1

Abstract: 4b1 toshiba TLP907 tlp9 11-4B101
Contextual Info: TO SH IBA TLP907,TLP907 LB TOSHIBA PHOTOREFLECTIVE SENSORS INFRARED LED + PHOTODARLINGTON TRANSISTOR TLP907, TLP907 (LB) DETECTION OF START AND END MARKS ON VIDEO AND AUDIO TAPE DETECTION OF VCR REEL ROTATION DETECTION OF INDEX WRITE-PROTECT AND PRESENCE OF DISK FOR FLOPPY DISK DRIVE

Contextual Info: Datasheet 7.0V to 36V Input, 2.5A Integrated MOSFET Single Synchronous Buck DC/DC Converter BD9E300EFJ-LB Key Specifications General Description This product guarantees long time support and long life cycle in Industrial market. BD9E300EFJ-LB is a synchronous buck switching regulator

Contextual Info: Datasheet 7.0V to 36V Input, 2.5A Integrated MOSFET Single Synchronous Buck DC/DC Converter BD9E301EFJ-LB Key Specifications General Description This product guarantees long time support and long life cycle in Industrial market. BD9E301EFJ-LB is a synchronous buck switching regulator

Contextual Info: Datasheet 7.0V to 36V Input, 1.0 A Integrated MOSFET Single Synchronous Buck DC/DC Converter BD9E101FJ-LB Key Specifications General Description This product guarantees long time support and long life cycle in Industrial market. BD9E101FJ-LB is a synchronous buck switching regulator

Contextual Info: Datasheet 7.0V to 36V Input, 1.0 A Integrated MOSFET Single Synchronous Buck DC/DC Converter BD9E100FJ-LB Key Specifications General Description This product guarantees long time support and long life cycle in Industrial market. BD9E100FJ-LB is a synchronous buck switching regulator

Contextual Info: Datasheet Small Signal IGBT/MOSFET Gate Driver Series Two-Channel/Three-Channel Small Signal IGBT/MOSFET Gate Drivers BD6562FV-LB, BD6563FV-LB ●General Description These products guarantee long time support in Industrial market. These products are the most suitable to use as these

Contextual Info: Datasheet 4.2V to 18V, 2A 1ch Synchronous Buck Converter Integrated FET BD9328EFJ-LB ●General Description This is the product guarantees long time support And long life cycle in Industrial market. The BD9328EFJ-LB is a synchronous step-down switching regulator that integrates 2 low resistance

BD9329

Contextual Info: Datasheet 4.2V to 18V, 3A 1ch Synchronous Buck Converter integrated FET BD9329AEFJ-LB General Description Key Specifications „ „ „ „ „ „ „ „ This is the product guarantees long time support in Industrial market. The BD9329AEFJ-LB is a synchronous step-down

Contextual Info: Datasheet 4.5V to 18V Input, 3.0A Integrated MOSFET Single Synchronous Buck DC/DC Converter BD9C301FJ-LB General Description Key Specifications This is the product guarantees long time support in Industrial market. BD9C301FJ-LB is a synchronous buck switching regulator with built-in low on-resistance power

Contextual Info: Datasheet Small Signal IGBT/MOSFET Gate Driver Series Three-Channel Small Signal IGBT/MOSFET Gate Drivers BD6563FV-LB General Description BD6563FV-LB is 3-ch gate driver to drive gate of IGBT/MOSFET from 5V input signals. Output signals consist of each high side and low side

D1062

Abstract: 2SB1657 C10535E C10943X MEI-1202
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SB1657 AUDIO FREQUENCY AMPLIFIER, SWITCHING PNP SILICON EPITAXIAL TRANSISTORS FEATURES • Low VCE sat VCE(sat) = −0.15 V Max (@lC/lB = 0.5 A/25 mA) Collector to Base Voltage Collector to Emitter Volteage VCB0 VCE0 −30 V

d1063

Abstract: 2SB1658 C10535E C10943X MEI-1202 D10630EJ1V0DS00
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SB1658 AUDIO FREQUENCY AMPLIFIER, SWITCHING PNP SILICON EPITAXIAL TRANSISTORS FEATURES • Low VCE sat VCE(sat) = −0.15 V Max (@lC/lB = 1.0 A/50 mA) Collector to Base Voltage Collector to Emitter Voltage VCB0 VCE0 −30 V

D1062

Abstract: 2SD2583 C10535E C10943X MEI-1202
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SD2583 AUDIO FREQUENCY AMPLIFIER, SWITCHING NOPN SILICON EPITAXIAL TRANSISTORS FEATURES • Low VCE sat VCE(sat) = 0.15 V Max (@lC/lB = 1.0 A/50 mA) Collector to Base Voltage Collector to Emitter Volteage VCB0 VCE0 30 V 30 V

bel 187 transistor

Abstract: RTC406 LBE2003S LBE2009S LCE2003S LCE2009S BEL 187 npn
Contextual Info: A 1I N AMER O bE P H ILIP S/D ISC R ETE D bbSBTBl O G lM ^ n b LB E /LC E 2 0 0 3S LB E /LC E2 0 0 9S T - 3 3 - Ö S - M IC R O W A V E LINEAR PO W ER T R A N SIST O R S N-P-N transistors for use in a common-emitter class-A linear power amplifier up to 4 GHz.

D1062

Abstract: 2SD2582 C10535E C10943X MEI-1202 965 ic data
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SD2582 AUDIO FREQUENCY AMPLIFIER, SWITCHING NPN SILICON EPITAXIAL TRANSISTORS FEATURES • Low VCE sat VCE(sat) = 0.15 V Max (@lC/lB = 0.5 A/25 mA) Collector to Base Voltage Collector to Emitter Voltage VCB0 VCE0 30 V 30 V Emitter to Base Voltage

60B120

Abstract: 2SA671 2SC1061
Contextual Info: ¿Z&MOSPEC PNP SILICON POWER TRANSISTORS PNP 2SA671 .designed for use in iow frequency power amplifier applications FEATURES: * Low Collector-Emitter Saturation Voltage VCE satf @ ic=2.0A,lB=0.2A * DC Current Gain hFE= 35-320@lc= 0.5A * Complememtary to NPN 2SC1061

Contextual Info: 2SB1355 Transistor, PNP Features Dimensions U n its : mm • • • • available in HRT package excellent current-to-gain characteristics low collector saturation voltage, typically VCE(sat) =-0.5 V at lc/lB = -3A /-0.3A 2SB1355 (HRT) 8.0±0.2 4.5±0.2

2SB1428

Contextual Info: 2SB1428 Transistor, PNP Features Dimensions Units : mm • available in FTL TL2 package • low collector saturation voltage, typically V CE(sat) = -0.5 V (max) at lc/ lB = -2 A /-0 .1 A • excellent current-to-gain characteristics 2SB1428 (FTL TL2) Applications

Contextual Info: 8368602 S O L I TRO N D E V I C E S , IN Q ^ b l D E olitron Devices, Inc, If lB b f lb D S e n p c o ts : S P E C I F I C A T I O N S Voltage, Collector to Base VCB0 I T r- ?i-i> NO.: Sa iva- TYPE: //p A / S J4 J& » / CASE: MAXIMUM RATINGS 5 00013^ 0 T 0 -3

Contextual Info: TOSHIBA -CDISCRETE/OPTO} ! 9097250 TOSHIBA DISCRETE/OPTO TO SH IB A TD ]> F | SOTTESO 90D 16014 SEMICONDUCTOR O O lb O m 0 7 ^ 33 .35- TOSHIBA CTR TRANSISTOR MG7 5G2YL1 A TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE HI RH POWER SWITCHING APPLICATIONS.