LASER DIODE WITH RISE TIME 0.4NS Search Results
LASER DIODE WITH RISE TIME 0.4NS Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
---|---|---|---|---|---|
LBAA0QB1SJ-295 | Murata Manufacturing Co Ltd | SX1262 MODULE WITH OPEN MCU | |||
GRJ55DR7LV474KW01K | Murata Manufacturing Co Ltd | Chip Multilayer Ceramic Capacitors with Soft Termination for General Purpose | |||
GRJ43DR7LV224KW01L | Murata Manufacturing Co Ltd | Chip Multilayer Ceramic Capacitors with Soft Termination for General Purpose | |||
GRJ43QR7LV154KW01L | Murata Manufacturing Co Ltd | Chip Multilayer Ceramic Capacitors with Soft Termination for General Purpose | |||
GRJ43QR7LV154KW01K | Murata Manufacturing Co Ltd | Chip Multilayer Ceramic Capacitors with Soft Termination for General Purpose |
LASER DIODE WITH RISE TIME 0.4NS Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
---|---|---|---|
Contextual Info: 1.25Gbps 1310nm DFB Laser Diode Module 1.25Gbps 1310nm DFB Laser Diode Module Features • Center wavelength 1310nm • Low threshold current • High speed tr/tf < 0.4ns • Built-in InGaAs monitor detector • Four-lead package • Wide operating temperature -20oC to 85oC |
Original |
25Gbps 1310nm 1310nm -20oC 25Gbps | |
Contextual Info: 1.25Gbps 1310nm DFB Laser Diode Module 1.25Gbps 1310nm DFB Laser Diode Module Features • Center wavelength 1310nm • Low threshold current • High speed tr/tf < 0.4ns • Built-in InGaAs monitor detector • Four-lead package • Wide operating temperature -20oC to 85oC |
Original |
25Gbps 1310nm 1310nm -20oC | |
Contextual Info: 1.25Gbps 1310nm DFB Laser Diode Module 1.25Gbps 1310nm DFB Laser Diode Module Features • Center wavelength 1310nm • Low threshold current • High speed tr/tf < 0.4ns • Built-in InGaAs monitor detector • Four-lead package • Wide operating temperature -20oC to 85oC |
Original |
25Gbps 1310nm 1310nm -20oC 100cm 25Gbps | |
Contextual Info: 1.25Gbps 1550nm DFB Laser Diode Module 1.25Gbps 1550nm DFB Laser Diode Module Features • Center wavelength 15500nm • Low threshold current • High speed tr/tf < 0.4ns • Built-in InGaAs monitor detector • Four-lead package • Wide operating temperature -20oC to 85oC |
Original |
25Gbps 1550nm 15500nm -20oC 100cm 25Gbps | |
Contextual Info: 1.25Gbps 1550nm DFB Laser Diode Module 1.25Gbps 1550nm DFB Laser Diode Module Features • Center wavelength 15500nm • Low threshold current • High speed tr/tf < 0.4ns • Built-in InGaAs monitor detector • Four-lead package • Wide operating temperature -20oC to 85oC |
Original |
25Gbps 1550nm 15500nm -20oC | |
Contextual Info: 1.25Gbps CWDM Laser Diode Module receptacle housing with FC, ST or SC connector Specifications Optical And Electrical Characteristics T=25+/-3 °C unless specified otherwise Parameter Symbol Test Conditions Peak Wavelength λc Po, To=-20~85°C Threshold Current |
Original |
25Gbps 1610nm 25Gbps, | |
Contextual Info: 1.25Gbps CWDM Laser Diode Module receptacle housing with FC, ST or SC connector Specifications Optical And Electrical Characteristics T=25+/-3 ° C unless specified otherwise Parameter Symbol Test Conditions Peak Wavelength λc Po, To=-20~85°C Threshold Current |
Original |
25Gbps 1610nm 25Gbps, 100cm 25Gbps -20oC | |
Contextual Info: 1.25Gbps CWDM Laser Diode Module receptacle housing with FC, ST or SC connector Specifications Optical And Electrical Characteristics T=25+/-3 °C unless specified otherwise Parameter Symbol Test Conditions Peak Wavelength λc Po, To=-20~85°C Threshold Current |
Original |
25Gbps 1610nm 25Gbps, 100cm 25Gbps -20oC | |
ML6101A
Abstract: laser diode with rise time 0.4ns ML6411C Mach-Zehnder Interferometer low noise, 780nm, 5mw 780nm 10mW laser diodes mach zehnder interferometer ML6411 ML6411A ML6701A
|
OCR Scan |
b24tifi2c1 ML6101A, ML6411Ã 6411C, ML6701A 780nm 10mW/facet ML6101A laser diode with rise time 0.4ns ML6411C Mach-Zehnder Interferometer low noise, 780nm, 5mw 780nm 10mW laser diodes mach zehnder interferometer ML6411 ML6411A | |
ML3401
Abstract: ML3411 34182 ML3101 laser diode with rise time 0.4ns
|
OCR Scan |
ML3101, ML3401, ML3411 815nm ML3401 ML3411 34182 ML3101 laser diode with rise time 0.4ns | |
Contextual Info: M IT S U B IS H I L A S E R D IO D E S ML3XX1 SERIES MITSUBISHI DISCRETE SC 31E D B ^24^02"] ü ü m ü 3 S M BI MI TS F O R O P T IC A L IN F O R M A T IO N S Y S T E M S 1 - 4 1 - 0 5 TYPE NAME ML3101, ML3401, ML3411 DESCRIPTION FEATURES Mitsubishi ML3XX1 are AlGaAs laser diodes emitting light |
OCR Scan |
ML3101, ML3401, ML3411 815nm | |
ia2c
Abstract: ML6101A Laser Diode for cd rw
|
OCR Scan |
780nm 10mW/facet ia2c ML6101A Laser Diode for cd rw | |
C11371
Abstract: AD515K 2N 10261 transistor application circuit Transistor AF 138S analog devices modell 281 analog devices modell 118 Model 310J ac121 inverter welder 4 schematic
|
OCR Scan |
||
schematic diagram tv sony kv 2197
Abstract: scheme tv color tucson LOG100 ADC600 ISO106 sony ccd ADC-817 adc817 SDM857 SHC76
|
OCR Scan |
TX712 TX811 schematic diagram tv sony kv 2197 scheme tv color tucson LOG100 ADC600 ISO106 sony ccd ADC-817 adc817 SDM857 SHC76 |