LASER DIODE LIFETIME 100000 Search Results

RLT1060-150G

Contextual Info: RLT1060-150G TECHNICAL DATA High Power Infrared Laser Diode High power, single mode laser diode, featuring high reliability and long lifetime. Suitable for many applications including medical laser therapy and defense Features • • • • Lasing Mode Structure: single mode

G3F diode

Contextual Info: Laser Diodes Gemini Series - 9x× nm High Brightness Laser Diode BLD-91-tt-50W-G3-F-10-c-l-xxx BLD-94-tt-50W-G3-F-10-c-l-xxx BLD-98-tt-50W-G3-F-10-c-l-xxx High Power Laser Diode Modules are manufactured by adopting specialized fibercoupling techniques, resulting in volume products with a high efficiency, stability and

Contextual Info: Laser Diodes 9x× nm High Power Diode Laser BLD-91-tt-10W-02-F-10-c-l-22 BLD-94-tt-10W-02-F-10-c-l-22 BLD-98-tt-10W-02-F-10-c-l-22 High Power Laser Diode Modules are manufactured by adopting specialized fibercoupling techniques, resulting in volume products with a high efficiency, stability and

Contextual Info: Laser Diodes Ant Series- 9x× nm High Brightness Laser Diode BLD-91-tt-30W-A3-F-10-c-l-22 BLD-94-tt-30W-A3-F-10-c-l-22 BLD-98-tt-30W-A3-F-10-c-l-22 High Power Laser Diode Modules are manufactured by adopting specialized fibercoupling techniques, resulting in volume products with a high efficiency, stability and

Contextual Info: Laser Diodes Ant Series- 9x× nm High Brightness Laser Diode BLD-91-tt-20W-A2-F-10-c-l-22 BLD-94-tt-20W-A2-F-10-c-l-22 BLD-98-tt-20W-A2-F-10-c-l-22 High Power Laser Diode Modules are manufactured by adopting specialized fibercoupling techniques, resulting in volume products with a high efficiency, stability and

RLT850-150GS

Contextual Info: RLT850-150GS TECHNICAL DATA High Power Infrared Laser Diode Features • • • • Lasing Mode Structure: single mode Peak Wavelength : typ. 852 nm Optical Output Power: 150 mW Package: 9 mm Electrical Connection Pin Configuration Bottom View n-type PIN

RLT850-100GS

Contextual Info: RLT850-100GS TECHNICAL DATA High Power Infrared Laser Diode Features • • • • Lasing Mode Structure: single mode Peak Wavelength : typ. 852 nm Optical Output Power: 100 W Package: 9 mm Electrical Connection Pin Configuration Bottom View n-type PIN 1

RLT808-150GS

Contextual Info: RLT808-150GS TECHNICAL DATA High Power Infrared Laser Diode Features • • • • Lasing Mode Structure: single mode Peak Wavelength : typ. 808 nm Optical Output Power: 150 W Package: 9 mm Electrical Connection Pin Configuration Bottom View n-type PIN 1

RLT780-150GS

Contextual Info: RLT780-150GS TECHNICAL DATA High Power Infrared Laser Diode Features • • • • Lasing Mode Structure: single mode Peak Wavelength : typ. 780 nm Optical Output Power: 150 mW Package: 9 mm Electrical Connection Pin Configuration Bottom View n-type PIN

RLT790-80MGS

Contextual Info: RLT790-80MGS TECHNICAL DATA High Power Infrared Laser Diode Features • • • • Lasing Mode Structure: single mode Peak Wavelength : typ. 790 nm Optical Output Power: 80 mW Package: 5.6 mm Electrical Connection Pin Configuration Bottom View n-type PIN

SM 850nm laser vcsel

Contextual Info: Laser Diodes Single-mode & polarizationstable VCSEL 850 nm, TO46, 2.0 mW • Single-mode • Ideal circular gaussian beam • Stable Polarization • Built-in ESD protection structure PRELIMINARY ELECTRO-OPTICAL CHARACTERISTICS T=20°C unless otherwise stated

ULM850-L2-PL-S0101U

Abstract: ULM850-PM-TN-S46FZP ULM850-VP-PL-S46XOP 894nm ULM850-PM-TN-S46XZP SM 850nm laser vcsel ulm tdlas vcsel SMD MAP 3959 ulm vcsel reference
Contextual Info: Single Mode VCSEL 850nm,TO46,0.5mW Ideal circular gaussian beam Built-in ESD protection structure High reliability, 10 years @ 85°C INVISIBLE LASER RADIATION AVOID BEAM EXPOSURE CLASS 3B LASER PRODUCT ELECTRO-OPTICAL CHARACTERISTICS T=20°C unless otherw ise stated

ADE-208-1410

Abstract: HL6323MG Hitachi DSA00230
Contextual Info: HL6323MG AlGaInP Laser Diode ADE-208-1410 Z 1st Edition Mar. 2001 Description The HL6323MG is a 0.63 µm band AlGaInP laser diode (LD) with a multi-quantum well (MQW) structure. It is suitable as a longer distance operating range for laser markers and a higher speed for positioning

RLT1060_350G

Contextual Info: RLT1060-350G TECHNICAL DATA High Power Infrared Laser Diode Lasing wavelength: 1064 nm, typ. Max. optical power: 350 mW Package: 9 mm SOT-148 PIN CONNECTION: 1) Laserdiode anode 2) Laserdiode cathode and photodiode cathode 3) Photodiode anode Optical-Electrical Characteristics (Tc = 25°C)

Light Detector laser

Abstract: short distance measurement ir infrared diode
Contextual Info: Opto-semiconductors Condensed Catalog HAMAMATSU PHOTONICS K.K. Our unique photonics technology delivers highly sophisticated opto-semiconductors with high-sensitivity and high-speed response. Hamamatsu Photonics has been at the cutting edge of photonics technology for 60 years. In that

21CFR(J) Class1

Contextual Info: AFCT-57V6NSZ Small Form Factor Pluggable SFP LC Optical Transceiver for 1.25GBd Ethernet at Extended Link Lengths (Up to 40km) Data Sheet Description The AFCT-57V6NSZ transceiver is a specially customised low-cost and hot-pluggable SFP MSA-compliant optical

AFCT-57V6AUSZ

Contextual Info: AFCT-57V6USZ Small Form Factor Pluggable SFP LC Optical Transceiver for 1.25GBd Ethernet at Extended Link Lengths (Up to 80km) Data Sheet Description The Avago Technologies AFCT-57V6USZ transceiver is a low-cost and hot-pluggable SFP MSA-compliant optical

21CFR(J) Class1

Abstract: AFCT-57V6AUSZ AFCT-57V6USZ SFF8472 AFCT-5715xZ SFP fiber optic pinout laser diode 1550 nm 2.5 Gbps
Contextual Info: AFCT-57V6USZ Small Form Factor Pluggable SFP LC Optical Transceiver for 1.25GBd Ethernet at Extended Link Lengths (Up to 80km) Data Sheet Description The Avago Technologies AFCT-57V6USZ transceiver is a low-cost and hot-pluggable SFP MSA-compliant optical

IT 8517E

Abstract: 8517E induction cooker schematic diagram diode d.a.t.a. book objectives of automatic college bell induction cooker component list on pcb induction cooker circuit diagram ADE-410-002 Ultrasonic humidifier circuit Induction sealing machine circuit diagram
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003.

AFCT-57V6NSZ

Contextual Info: AFCT-57V6NSZ Small Form Factor Pluggable SFP LC Optical Transceiver for 1.25GBd Ethernet at Extended Link Lengths (Up to 40km) Data Sheet Description The AFCT-57V6NSZ transceiver is a specially customised low-cost and hot-pluggable SFP MSA-compliant optical

HP LED handbook

Abstract: Custom Luxeon Design Guide Luxeon driver schematic luxeon ds23 AB05 DS23 AB-06 AB06 thermal design considerations lumileds circuit diagram of a laser lighter
Contextual Info: application brief AB12 Custom Luxeon Design Guide The objective of this design guide is to provide customers with the technical resources necessary to identify custom Luxeon™ Power Light Sources for unique applications. A Luxeon Power Light Source is a configuration of Luxeon Light Emitting

laser diode 670nm 40mW

Abstract: dvd writer laser "Hitachi Kodaira Semiconductor" low noise, 780nm, 5mw 650NM laser diode 5mw ADE-508-011E photo magneto electric hitachi laser diode HL6720G 650nm 5mw laser with collimator
Contextual Info: Information and Industry Laser Diodes Application Note ADE-508-011E Hitachi 5/14/01 Safety Considerations Be sure to avoid direct exposure of human eyes to high power laser beams emitted from laser diodes. Even though barely visible and/or invisible to the human

KJE transistor

Abstract: thyristor control spot welding circuit thyristor lead acid battery charging thyristor control arc welding rectifier circuit FSM26L0336K* ffv range FSM26V0206K KJE 17 transistor elco capacitor 16 uf 450 -550 volt 100 kvar 480 volt 3 phase power factor capacitors FPG86Y0604J
Contextual Info: Medium Power Film Capacitors FFVE/FFVI Male and Female Connections GENERAL DESCRIPTION DC FILTERING The FFV capacitor is specifically designed for DC filtering, low reactive power. The series uses a non-impregnated metallized polypropylene or polyester dielectric, which

Thomson-CSF POLYESTER capacitors

Abstract: Thomson-CSF POLYESTER capacitors TPC thomson film capacitors .22 uf 400 volt ac capacitor thyristor control arc welding rectifier circuit thyristor control spot welding circuit KJE transistor mil-m-24519 FAV36B0804K capacitor snubber Polypropylene 1 uf
Contextual Info: A KYOCERA GROUP COMPANY AVX Medium Power Film Capacitors For Power Applications Contents MEDIUM POWER FILM CAPACITORS DC FILTERING FFB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4