LASER DIODE BARE CHIP Search Results

U-CP-9850044

Contextual Info: U-CP-9850044 UNION OPTRONICS CORP. 980nm Laser Diode Chips 980nm Laser Diode Chips U-CP-9850044 •Specifications 1 Size : (2) Device: (3) Structure 300*300*100 m Laser diode bare chip Double channel , single ridge waveguide 300μm ■External dimensions(Unit : μm)

U-CP-80B0065

Abstract: diode laser 808nm 200mW TO-CAN 808nm 808nm laser diode laser diode bare chip laser diode 808nm
Contextual Info: U-CP-80B0065 UNION OPTRONICS CORP. 808nm Laser Diode Chips 808nm IR Laser Diode Chips U-CP-80B0065 •Specifications 1 Size : (2) Device: (3) Structure 300*500*100 m Laser diode bare chip Single ridge waveguide ■External dimensions(Unit : μm) 500μm

U-CP-80C0055-preliminary

Abstract: 808nm 300mw laser diode laser diode 300mw TO-CAN 808nm 300mW TO18 Laser 808nm 300 mw 808nm laser diode laser diode bare chip
Contextual Info: U-CP-80C0055-preliminary UNION OPTRONICS CORP. 808nm Laser Diode Chips 808nm IR Laser Diode Chips U-CP-80C0055-preliminary •Specifications 1 Size : (2) Device: (3) Structure 300*400*100 m Laser diode bare chip Single ridge waveguide ■External dimensions(Unit : μm)

TO18 Laser 808nm 300 mw

Abstract: IR Laser diode laser diode bare chip
Contextual Info: U-CP-80E0075-preliminary UNION OPTRONICS CORP. 808nm Laser Diode Chips 808nm IR Laser Diode Chips U-CP-80E0075-preliminary •Specifications 1 Size : (2) Device: (3) Structure 300*600*100 m Laser diode bare chip Single ridge waveguide ■External dimensions(Unit : μm)

U-CP-6505001

Abstract: laser diode bare chip
Contextual Info: U-CP-6505001 UNION OPTRONICS CORP. 650nm Laser Diode Chips 650nm Red Laser Diode Chips U-CP-6505001 •Specifications 1 Size : (2) Device: (3) Structure: 200*250*100 m Laser diode bare chip Double channel , single ridge waveguide ■External dimensions(Unit : μm)

laser diode bare chip

Contextual Info: U-CP-6505021 UNION OPTRONICS CORP. 650nm Laser Diode Chips 650nm Red Laser Diode Chips U-CP-6505021 •Specifications 1 Size : (2) Device: (3) Structure: 250*300*100 m Laser diode bare chip Double channel , single ridge waveguide ■External dimensions(Unit : μm)

U-CP-6505011

Abstract: 650nm 5mw laser 300um 650nm 5mw laser diode laser diode bare chip
Contextual Info: U-CP-6505011 UNION OPTRONICS CORP. 650nm Laser Diode Chips 650nm Red Laser Diode Chips U-CP-6505011 •Specifications 1 Size : (2) Device: (3) Structure: 250*250*100 m Laser diode bare chip Double channel , single ridge waveguide ■External dimensions(Unit : μm)

TO18 Laser 808nm 300 mw

Abstract: 808nm laser diode diode laser 808nm 200mW 808nm pad to18 Laser Diode 250mW p1875mw laser diode bare chip
Contextual Info: SLD-808-P200-C-03 UNION OPTRONICS CORP. 808nm Laser Diode Chips 808nm IR Laser Diode Chips SLD-808-P200-C-03 •Specifications 1 Size : (2) Device: (3) Structure 500*300*100 m Laser diode bare chip Single ridge waveguide ■External dimensions(Unit : μm)

Laser Diode 808 300 mw

Contextual Info: SLD-808-P200-C-04 UNION OPTRONICS CORP. 808nm Laser Diode Chips 808nm IR Laser Diode Chips SLD-808-P200-C-04 •Specifications 1 Size : (2) Device: (3) Structure 500*300*100 m Laser diode bare chip Single ridge waveguide ■External dimensions(Unit : μm)

650nm 5mw laser diode

Contextual Info: U-CP-6505131 UNION OPTRONICS CORP. 650nm Laser Diode Chips 650nm Red Laser Diode Chips U-CP-6505131 •Specifications 1 Size : (2) Device: (3) Structure: 300*250*100 m Laser diode bare chip Strained MQW and Multi-step MOCVD growth μm ■External dimensions(Unit : μm)

X100M

Abstract: laser diode bare chip
Contextual Info: SLD-980-P50-C-300-03 UNION OPTRONICS CORP. 980nm Laser Diode chips 980nm Laser Diode Chips SLD-980-P50-C-300-02 size :300*300 m Specifications Device Laser Diode Bare Chip Structure Double Channel , Single Ridge Waveguide 300µ m •External dimensions Unit : μm

635-P5-C-N-RG-300-02

Abstract: SLD-635-P5-C-N-RG-300-02 laser diode 635 nm laser diode chip 635nm 635nm laser diode bare chip
Contextual Info: 635-P5-C-N-RG-300-02 UNION OPTRONICS CORP. 635nm Laser Diode chips 635nm Red Laser Diode Chips SLD-635-P5-C-N-RG-300-02 size : 300*300um Specifications Device Laser Diode Bare Chip Structure Multi-step growth •External dimensions Units : um P-electrode

SLD-980-P50-C-300-05

Abstract: ridge waveguide semiconductor laser laser diode 980nm
Contextual Info: SLD-980-P50-C-300-05 UNION OPTRONICS CORP. 980nm Laser Diode Chips 980nm Laser Diode Chips SLD-980-P50-C-300-05 •Specifications 1 Size : (2) Device: (3) Structure 300*300*100 m Laser diode bare chip Double channel , single ridge waveguide 300µm ■External dimensions(Unit : μm)

Contextual Info: SLD-980-P50-C-300-04 UNION OPTRONICS CORP. 980nm Laser Diode Chips 980nm Laser Diode Chips SLD-980-P50-C-300-04 •Specifications 1 Size : (2) Device: (3) Structure 300*300*100µm Laser diode bare chip Double channel , single ridge waveguide 300µm ■External dimensions(Unit : m)

650NM laser diode 5mw

Abstract: DVD laser U-CP-6505142 laser diode DVD DVD diode 300 mW dvd pulse laser diode DVD laser assembly Laser Diode for dvd laser diode bare chip dvd laser diode
Contextual Info: U-CP-6505142 UNION OPTRONICS CORP. 650nm Laser Diode chips for DVD 650nm Red Laser Diode Chips for DVD U-CP-6505142 •Specifications 1 Size : (2) Device: (3) Structure: 300*300*100 m DVD Laser diode bare chip Strained MQW and Multi-step MOCVD growth ■External dimensions(Unit : μm)

laser diode bare chip

Abstract: laser diode chip 635nm
Contextual Info: SLD-635-P5-C-N-RG-300-04 UNION OPTRONICS CORP. 635nm Laser Diode Chips 635nm Red Laser Diode Chips SLD-635-P5-C-N-RG-300-04 •Specifications 1 Size : (2) Device: (3) Structure: 300*300*100µm Laser diode bare chip Multi-step growth ■External dimensions(Unit : m)

10g DFB

Abstract: dfb 10g dfb laser 1300 nm bare die DFB 1300 rise time laser diode bare chip DFB laser bare die
Contextual Info: PRELIMINARY DATASHEET | MAY 21, 2004 Uncooled 4 Gb/s CWDM DFB Bare Die The 4 Gb/s CWDM DFB laser diode chip is designed to facilitate extended temperature operation. Target applications include LX4 transceivers, SONET OC-48, and SDH STM-16. Performance Highlights

10g DFB

Abstract: 10 gb laser diode 1310 nm dfb 10g 10G bare die DFB TO 10DFB ca 91803
Contextual Info: PRELIMINARY DATASHEET | MAY 5, 2004 Uncooled 10 Gb/s 1310 nm DFB Bare Die The 10 Gb/s 1310 nm DFB laser diode chip is designed to facilitate extended temperature operation. Target applications include SONET OC-192, SDH STM-64, 10 Gigabit Ethernet, 10G Fibre Channel, and

10 gb laser diode 1310 nm

Abstract: laser diode bare chip DFB laser bare die sdh markings bare die
Contextual Info: PRELIMINARY DATASHEET | MAY 14, 2004 Uncooled 2.5 Gb/s 1310 nm DFB Bare Die The 2.5 Gb/s 1310 nm DFB laser diode chip is designed to facilitate extended temperature operation. Target applications include SONET OC-48, SDH STM-16, Gigabit Ethernet, and fiber optic sensors.

Laser diode Fabry-Perot

Abstract: FP 1310 2.5G TO
Contextual Info: PRELIMINARY DATASHEET | MAY 14, 2004 Uncooled 2.5 Gb/s 1310 nm Fabry-Perot Bare Die The 2.5 Gb/s 1310 nm Fabry-Perot laser diode chip is designed to facilitate extended temperature operation. Target applications include SONET OC-48, SDH STM-16, Gigabit Ethernet, and fiber optic sensors.

Contextual Info: Single Angled Facet SAF Laser Diode 1550 nm semiconductor gain chip (Preliminary) DESCRIPTION Quantum Photonics’ Single Angled Facet (SAF) gain chip is based on high-power InP ridge waveguide laser diode technology. Laser cavity oscillation is prevented by active waveguide engineering to produce a front angled facet which in combination with antireflection coating ensures a broadband low facet reflectivity. Optional mode transformers monolithically incorporated at the facets

Laser Diode 1550 nm

Abstract: Fabry-Perot 1550 nm Quantum Photonics Single Angled Facet SAF Laser Diode 1550 nm semiconductor gain chip laser diode bare chip 1550 Laser InP tunable lasers diode applications Fabry-Perot-Laser-Diode 1550 laser diode Laser diode Fabry-Perot
Contextual Info: Single Angled Facet SAF Laser Diode 1550 nm semiconductor gain chip (Preliminary) DESCRIPTION Quantum Photonics’ Single Angled Facet (SAF) gain chip is based on high-power InP ridge waveguide laser diode technology. Laser cavity oscillation is prevented by active waveguide engineering to produce a front angled facet which in combination with antireflection coating ensures a broadband low facet reflectivity. Optional mode transformers monolithically incorporated at the facets

Germanium PIN laser diode

Abstract: receiver pin diode for 10Gbps silicon diode and germanium tunable lasers diode applications 3.3v laser diode stm 64 APD 10gbps Germanium Power Diodes laser driver, STM-64 bare die FOA3251B1
Contextual Info: High Speed Communication ICs Product Overview Function Transceiver Functions: Part Number Clock and Data Recovery FOA3251B1 Clock and Data Recovery FOA3100xB1 MUX/CMU FOA4100xB1 MUX/CMU FOA4400xA DEMUX/CDR FOA5100xB1 DEMUX/CDR FOA5400xA Ø MUX/CMU Ø DEMUX/CDR

Contextual Info: VITESSE SEMICONDUCTOR CORPORATION Target Specification SONET/SDH 10.7Gb/s Laser Diode Driver VSC7990 Features • Typical Rise Times of 25ps • Direct Access to Modulation and Bias FETs • On-chip Reclocking Register • On-chip Mux for Selectable Clocked or Nonclocked Applications