LASER DIODE 808 300 MW Search Results

Laser Diode 808 300 mw

Contextual Info: SLD-808-P200-C-04 UNION OPTRONICS CORP. 808nm Laser Diode Chips 808nm IR Laser Diode Chips SLD-808-P200-C-04 •Specifications 1 Size : (2) Device: (3) Structure 500*300*100 m Laser diode bare chip Single ridge waveguide ■External dimensions(Unit : μm)

TO18 Laser 808nm 300 mw

Abstract: 808nm laser diode diode laser 808nm 200mW 808nm pad to18 Laser Diode 250mW p1875mw laser diode bare chip
Contextual Info: SLD-808-P200-C-03 UNION OPTRONICS CORP. 808nm Laser Diode Chips 808nm IR Laser Diode Chips SLD-808-P200-C-03 •Specifications 1 Size : (2) Device: (3) Structure 500*300*100 m Laser diode bare chip Single ridge waveguide ■External dimensions(Unit : μm)

LDM_0808_300M_91

Contextual Info: LDM-0808-300m-91 TECHNICAL DATA High Power Infrared Laser Diode Features • CW Output Power: 300 mW • Typical 808 nm Emission Wavelength • High-efficiency Quantum Well Structure • TO5 Package Applications • Solid-state Laser Pumping • Medical Usage

808 nm

Abstract: RLDB808-300-3
Contextual Info: RLDB808-300-3 TECHNICAL DATA Infrared Diode Laser Module Thechnical Parameters : • • • • • • • • • • • • • Size: Ø 22 mm x 65 mm Wavelength: 808 nm Operating Voltage: DC 3 V DC 5 V on request Operating Current : ≤250 mA Divergence : 0.3 mrad

JDSU CQF935 DFB

Abstract: CQF935 JDS uniphase CQF935 uniphase CQF935 Laser Diode 808 2 pin 1000 mw datasheets JDS uniphase CQF935 808 nm 1000 mw 2 pins GR-468-CORE 808 nm 1000 mw laser diode JDSU CQF935
Contextual Info: Product Bulletin 50 mW 1550 nm CW DFB Lasers with PM Fiber for WDM Applications CQF935/808 Series The JDS Uniphase CQF935/808 series laser is specifically developed for wavelength division multiplexing WDM systems, where it is used as a wavelength selected source in combination with an

JDSU CQF935 DFB

Abstract: JDSU CQF935 JDS uniphase CQF935 uniphase CQF935 CQF935
Contextual Info: Product Bulletin 50 mW 1550 nm CW DFB Lasers with PM Fiber for WDM Applications CQF935/808 Series The JDS Uniphase CQF935/808 series laser is specifically developed for wavelength division multiplexing WDM systems, where it is used as a wavelength selected source in combination with an

Laser Diode 808 2 pin 1000 mw

Abstract: 808 nm 1000 mw laser diode CW laser diode 808 nm tunable lasers diode applications LD-808-500C-C LASER DISTANCE METER 808 nm 1000 mw Laser-Diode 808 Laser Diode 808 nm Laser Diode LD Catalog
Contextual Info: TUNABLE LASER DIODES High-Power Laser Diodes Fiber Pigtailed HHL TO-3 LASER DIODES Key Features • Longer laser diode lifetime due to aluminum free device structures* • Visible, near IR and infrared laser diodes with center wavelengths of 670, 808, 980 and 1930 nm

MM-222-037-261-42UM

Contextual Info: New red and IR laser diodes Roithner Lasertechnik proudly presents several new laser diodes in the red and infrared wavelength range. S6430MG, 640 nm, 30 mW, sm, 50 °C, 5.6 mm, datasheet S66100MG, 660 nm, 100 mW, mm, 50 °C, 5.6 mm, datasheet S66150MG, 660 nm, 150 mW, mm, 50 °C, 5.6 mm, datasheet

Contextual Info: 808/830 nm Broad Area Laser Diode Product Family Specification Sheet The M8xx series of Broad Area Laser Diodes from Axcel Photonics offer high CW optical power from a 100 micron multi-mode aperture and high brightness with industry leading reliability. This series of devices is

laser diode 200mw to-18

Abstract: 200MW
Contextual Info: LCA808200M9N Laser Diode Technical Data ABSOLUTE MAXIMUM RATINGS Tc=25 oC Features • Index Guided MQW Structure • Wavelength : 808 nm (Typ.) • Optical Power : 200 mW CW • Threshold Current : 80 mA ( Typ. ) • Package Style : TO-18 (5.6 mmØ) DESCRIPTION

smd diode UJ 64 A

Abstract: SLD3237VFR 20/SPL1550-10-9-PD SLD3237VF smd diode UM 08 smd diode UM RLCD-M66H-750 RLT905-30G SLD3236VF RLT6650GLI
Contextual Info: PRICE LIST 03/2015 Wiedner Hauptstrasse 76, Vienna, Austria EUR USD Tel: +43-1-586 52 430, Fax: +43-1-586 52 43 44 1,00 1,10182 office@roithner-laser.com, www.roithner-laser.com 2015-06-03 last update 2015-06-03 LASER DIODES - UV EUR USD 1-9 pcs. 1-9 pcs.

1090D

Abstract: 1000mW laser SLD300 SLD323V SLD323V-1 SLD323V-2 SLD323V-21 SLD323V-24 SLD323V-25 SLD323V-3
Contextual Info: SLD323V High Power Density 1W Laser Diode Description The SLD323V is a high power, gain-guided laser diode produced by MOCVD method∗1. Compared to the SLD300 Series, this laser diode has a high brightness output with a doubled optical density which can be

808 nm 1000 mw

Abstract: 1000mW laser diode SLD300 SLD323V SLD323V-1 SLD323V-2 SLD323V-21 SLD323V-24 SLD323V-25 SLD323V-3
Contextual Info: SLD323V High Power Density 1W Laser Diode Description The SLD323V is a high power, gain-guided laser diode produced by MOCVD method∗1. Compared to the SLD300 Series, this laser diode has a high brightness output with a doubled optical density which can be

Contextual Info: Laser Diodes 808nm Single Fiber Output Dual-Wavelength Laser Diodes BLD-81-tt-2W-14-F-f-c-l-22 BLD-81-tt-4W-14-F-f-c-l-22 BLD-81-tt-5W-14-F-f-c-l-22 BLD-81-tt-8W-14-F-f-c-l-22 High Power Laser Diode Modules are manufactured by adopting specialized fibercoupling techniques, resulting in volume products with a high efficiency, stability and

SLD323XT

Abstract: 1000mW laser SLD300 SLD323XT-1 SLD323XT-2 SLD323XT-21 SLD323XT-24 SLD323XT-25 SLD323XT-3 808 nm 1000 mw laser diode
Contextual Info: SLD323XT High Power Density 1W Laser Diode Description The SLD323XT is a high power, gain-guided laser diode produced by MOCVD method∗1. Compared to the SLD300 Series, this laser diode has a high brightness output with a doubled optical density which can be

808 nm 100 mw

Abstract: SLD300 SLD323V SLD323V-1 SLD323V-2 SLD323V-21 SLD323V-24 SLD323V-3 1000mW laser diode 808 nm 1000 mw
Contextual Info: SLD323V High Power Density 1W Laser Diode Description The SLD323V is a high power, gain-guided laser diode produced by MOCVD method∗1. Compared to the SLD300 Series, this laser diode has a high brightness output with a doubled optical density which can be achieved by QW-SCH structure∗2.

Contextual Info: SONY CORP/COMPONENT PLOD'S 1Ô E D • Ô3ÔS3Ô3 000200*1 fl SLD 301W Sony 100 mW High Power Laser Diode h e lim in a ry T -4 1 -0 5 Unit: mm Package Outline Description The SLD 301W is a gain-guided high-power laser diode fabricated by MOCVD. Features • High Power Po= 100 mW

Contextual Info: rev.1.0 16.03.2015 S8081WG Description S8081WG is a infrared laser diode emitting at typically 808 nm with rated output power of 1 W cw, in a standard 9 mm TO package with flat window cap. Maximum Ratings T CASE = 25°C Parameter Symbol Values Unit Output power

SLD300

Abstract: SLD323XT SLD323XT-1 SLD323XT-2 SLD323XT-21 SLD323XT-24 SLD323XT-3
Contextual Info: SLD323XT 1W High Power Laser Diode Description The SLD323XT is a high power, gain-guided laser diode produced by MOCVD method∗1. Compared to the SLD300 Series, this laser diode has a high brightness output with a doubled optical density which can be achived by QW-SCH structure∗2.

808nm 500mw

Abstract: ADL-80V01NL 808nm 500mw laser diode 80V01 C 828
Contextual Info: AlGaAs Infrared Laser Diode ADL-80V01NL DATE：2006/03/02 Ver 2.0 ★808nm 500mW 9φ TO-Type High Power Laser Diode • Features 1. Low operation current 2. Cost effective • Applications 1. Pumps for solid state lasers 2. Medical use • Absolute maximum ratings

laser 790 nm sony 8 mw

Contextual Info: SONY SLD323V High Power Density 1W Laser Diode Description The SLD 323V is a high power, gain-guided laser diode produced by M O C V D method*1. Com pared to the SLD 300 Series, this laser diode has a high brightness output with a doubled optical density which can be achieved by Q W -SC H structure*2.

808nm 500mw

Abstract: ADL-80V03TL 80V03
Contextual Info: ADL-80V03TL Infrared Laser Diode 6-2D-LD80-010_Rev.00 808nm 500mW High Power Operation • Features 1. Low operation current 2. High pumping efficiency 3. Stable wavelength 4. High reliability • Applications 1. Pumping source for DPSS green laser 2. Medical applications

ntc 80-9

Abstract: Thermistor NTC-10 NTC 15 KM ntc 1,0
Contextual Info: SIEMENS SFH 487401 SFH 487406 808 nm InAIGaAs LASER DIODE 1000 mW with FC-connector 750 mW^ FEATURES • • • • * SFH487401 : Mlcrooptlca for Improved Farfleld Pattern • SFH487406: Mlcrooptlca for Efficient Fiber Coupling • Package: To 220-Package

808nm laser

Abstract: 808nm 500mw 808nm 500mW laser diode 9mm
Contextual Info: LUMEX laser diodes 808nm OED-LDH8004F OED-LDH8005F Features • • • • Visible lig h t: X - 808 nm Typ. Output power: 200mW/500mW, CW High Efficiency MOCVD Quantum Well Design Standard TO-5 package (9mm 0 ) Applications • Diode pump solid state laser