LASER DIODE 808 2 PIN 1000 MW Search Results

808nm 1W laser diode

Abstract: M9-808-1000-03X 808nm 1W 808 nm 1000 mw 2 pins 808 nm 1000 mw laser diode 808 nm 1000 mw 1w laser diode 830 nm laser diode 808nm
Contextual Info: Product Specifications Features x 1W CW output power. x Fast-axis Collimation x High Quality, Reliability, & Performance M9-808-1000-03X 2-pin 9mm TO-can, 808nm Multi-Mode Laser Diode With Micro-lens, 50Njm emitter 1W Description: Applications x Solid State Pumping

Laser Diode 808 2 pin 1000 mw

Abstract: 808 nm 1000 mw laser diode CW laser diode 808 nm tunable lasers diode applications LD-808-500C-C LASER DISTANCE METER 808 nm 1000 mw Laser-Diode 808 Laser Diode 808 nm Laser Diode LD Catalog
Contextual Info: TUNABLE LASER DIODES High-Power Laser Diodes Fiber Pigtailed HHL TO-3 LASER DIODES Key Features • Longer laser diode lifetime due to aluminum free device structures* • Visible, near IR and infrared laser diodes with center wavelengths of 670, 808, 980 and 1930 nm

Laser Diode 808 2 pin 1000 mw

Abstract: CW laser diode 808 nm 1200 mw 808 nm 1000 mw 808 nm 1000 mw laser diode
Contextual Info: High Power CW Laser Diode LCG-808-1000M-9N FEATURES High-efficiency MQW structure Wavelength: 808 nm Typ. Optical Power: 1000 mW, CW Integrated Monitor Diode Standard Package: 9 mm ∅ APPLICATIONS Medical Printing Material Processing Illumination Measurement

Contextual Info: High Power CW Laser Diode LCG-808-1000M-9N FEATURES High-efficiency MQW structure Wavelength: 808 nm Typ. Optical Powrer: 1000 mW, CW Integrated Monitordiode Standard Package: 9 mm ∅ APPLICATIONS Medical Printing Material Processing Illumination Measurement

Contextual Info: High Power CW Laser Diode LCG-808-1000M-9N FEATURES High-efficiency MQW structure Wavelength: 808 nm Typ. Optical Powrer: 1000 mW, CW Integrated Monitordiode Standard Package: 9 mm ∅ APPLICATIONS Medical Printing Material Processing Illumination Measurement

Contextual Info: Preliminary Data Sheet High Power CW Laser Diode LCG-808-1000M-9N Features - High-efficiency MQW structure Wavelength: 808 nm Typ. Optical Power: 1000 mW, CW Integrated Monitordiode Standard Package: 9 mm ∅ Applications - Medical Printing Material Processing

808 nm 1000 mw 2 pins

Abstract: Laser Diode 808 2 pin 1000 mw 808 nm 1000 mw 2 Wavelength Laser Diode 808 nm 100 mw peltier cooler 1000mW laser 1000mW laser diode chip thermistor medical device Laser Diode 808 2000 mw
Contextual Info: SLD323XT 1W High Power Laser Diode Description The SLD323XT is a high power, gain-guided laser diode produced by MOCVD method∗1. Compared to the SLD300 Series, this laser diode has a high brightness output with a doubled optical density which can be achived by QW-SCH structure∗2.

SLD323XT

Abstract: 1000mW laser SLD300 SLD323XT-1 SLD323XT-2 SLD323XT-21 SLD323XT-24 SLD323XT-25 SLD323XT-3 808 nm 1000 mw laser diode
Contextual Info: SLD323XT High Power Density 1W Laser Diode Description The SLD323XT is a high power, gain-guided laser diode produced by MOCVD method∗1. Compared to the SLD300 Series, this laser diode has a high brightness output with a doubled optical density which can be

1090D

Abstract: 1000mW laser SLD300 SLD323V SLD323V-1 SLD323V-2 SLD323V-21 SLD323V-24 SLD323V-25 SLD323V-3
Contextual Info: SLD323V High Power Density 1W Laser Diode Description The SLD323V is a high power, gain-guided laser diode produced by MOCVD method∗1. Compared to the SLD300 Series, this laser diode has a high brightness output with a doubled optical density which can be

808 nm 1000 mw

Abstract: 1000mW laser diode SLD300 SLD323V SLD323V-1 SLD323V-2 SLD323V-21 SLD323V-24 SLD323V-25 SLD323V-3
Contextual Info: SLD323V High Power Density 1W Laser Diode Description The SLD323V is a high power, gain-guided laser diode produced by MOCVD method∗1. Compared to the SLD300 Series, this laser diode has a high brightness output with a doubled optical density which can be

SLD300

Abstract: SLD323XT SLD323XT-1 SLD323XT-2 SLD323XT-21 SLD323XT-24 SLD323XT-3
Contextual Info: SLD323XT 1W High Power Laser Diode Description The SLD323XT is a high power, gain-guided laser diode produced by MOCVD method∗1. Compared to the SLD300 Series, this laser diode has a high brightness output with a doubled optical density which can be achived by QW-SCH structure∗2.

Contextual Info: rev.1.0 16.03.2015 S8081WG Description S8081WG is a infrared laser diode emitting at typically 808 nm with rated output power of 1 W cw, in a standard 9 mm TO package with flat window cap. Maximum Ratings T CASE = 25°C Parameter Symbol Values Unit Output power

808 nm 100 mw

Abstract: SLD300 SLD323V SLD323V-1 SLD323V-2 SLD323V-21 SLD323V-24 SLD323V-3 1000mW laser diode 808 nm 1000 mw
Contextual Info: SLD323V High Power Density 1W Laser Diode Description The SLD323V is a high power, gain-guided laser diode produced by MOCVD method∗1. Compared to the SLD300 Series, this laser diode has a high brightness output with a doubled optical density which can be achieved by QW-SCH structure∗2.

dvd laser diode 10 pin 700 mw

Abstract: TO56 CD pickup laser diode diode product list 131050 6311-7212-AU 6350-1271-AU 6511-7261-AU 6521-2112-AU 6550-5151-DV
Contextual Info: 富伸電子股份有限公司 SHANGHAI LECC OPTO. CO., LTD. Address :Xiangji Industrial Park,Zhuanghang Town ,Fengxian District, Shanghai， China 上海市奉賢區莊行鎮相計工業區 Tel:+86-21-57407400 Fax:+86-21-57407403 E-Mail:jillian@lecc.com.tw

Laser Diode 808 2 pin 1000 mw

Abstract: 808 nm 1000 mw RLT808100GS 808 nm 1000 mw laser diode
Contextual Info: ROITHNER LASERTECHNIK A-1040 WIEN, FLEISCHMANNGASSE 9 TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43 e-mail: office@roithner-laser.com http://www.roithner-laser.com RLT808100GS TECHNICAL DATA High Power Infrared Laserdiode Structure: AlGaAs/GaAs quantum well, aperture 3 x 1 µm

photovoltaic transducer

Abstract: PPC-6E jdsu 808 nm 100 mw ppc6eST diode 6e photovoltaic sensor laser diode jdsu power source jdsu 808 nm 1000 mw
Contextual Info: PHOTONIC POWER 6 V Photovoltaic Power Converter PPC-6E Key Features • Up to 100 mA at 5 V • Up to 500 mW electrical power • Up to 6 volts output • Optimized for 810 nm source • Complete electrical isolation Applications • Optically powered current transducer

electroabsorption modulator

Abstract: electroabsorption modulator laser diode electroabsorption 741 metal package Electro-absorption modulator
Contextual Info: VITESSE SEMICONDUCTOR CORPORATION Advance Product Information VSC7989 SONET/SDH 10.7Gb/s Electroabsorption Modulator/Laser Diode Driver Features • Rise Times Less Than 35ps • Single-Supply • High-Speed Operation Up to 10.7Gb/s NRZ Data • CML-Compatible Data Inputs

vs-s1558

Abstract: vss 1558 electroabsorption modulator laser diode 10ghz modulator driver Laser Diode 808 2 pin 1000 mw VSC7991 electroabsorption modulator 2296
Contextual Info: VITESSE SEMICONDUCTOR CORPORATION Advance Product Information VSC7991 SONET/SDH 10.7Gb/s Electroabsorption Modulator/Laser Diode Driver Features • Rise Times Less Than 30ps • Single-Supply • High-Speed Operation Up to 10.7Gb/s NRZ Data • CML-Compatible Data Inputs

photovoltaic transducer

Abstract: photovoltaic with current transducer 808 nm 100 mw jdsu photovoltaic sensor 4E diode ppc4e Laser Diode 808 2 pin 1000 mw laser diode jdsu 808 nm 1000 mw
Contextual Info: PHOTONIC POWER 4 V Photovoltaic Power Converter PPC-4E Key Features • Up to 140 mA at 3.5 V • Up to 500 mW electrical power • Up to 4 volts output • Optimized for 810 nm source • Complete electrical isolation Applications • Optically powered current transducer

Contextual Info: LASERS & MATERIAL PROCESSING I OPTICAL SYSTEMS I INDUSTRIAL METROLOGY I TRAFFIC SOLUTIONS I DEFENSE & CIVIL SYSTEMS Fiber-Coupled Diode Lasers qcw, passively cooled with integrated TEC JOLD-120-QPXF-2P iTEC Design 215529124 Features: Applications: • High optical output power of 120 W qcw

Contextual Info: LASERS & MATERIAL PROCESSING I OPTICAL SYSTEMS I INDUSTRIAL METROLOGY I TRAFFIC SOLUTIONS I DEFENSE & CIVIL SYSTEMS Fiber-Coupled Diode Lasers cw, passively cooled with integrated TEC JOLD-75-CPXF-2P iTEC Design 215529224 Features: Applications: • High optical output power of 75 W cw

vs-s1558

Abstract: electroabsorption modulator laser diode Laser Diode 808 2 pin 1000 mw CD 741 Electroabsorption modulator VSC7991 EAM laser vss1558 VMOD 741 metal package
Contextual Info: VITESSE SEMICONDUCTOR CORPORATION Advance Product Information VSC7991 SONET/SDH 10.7Gb/s Electroabsorption Modulator/Laser Diode Driver Features • Maximum Rise/Fall Times of 38ps • Single-Supply • High-Speed Operation Up to 10.7Gb/s NRZ Data • CML-Compatible Data Inputs

SLD323

Abstract: 808 nm 100 mw SLD300 SLD323V SLD323V-1 SLD323V-2 SLD323V-21 SLD323V-24 SLD323V-25 SLD323V-3
Contextual Info: SONY SLD323V High Power Density 1 W Laser Diode Package Outiine_ Unit : mm Description The SLD323V is a high power, gain-guided laser diode produced by MOCVD m ethod*'. Compared to the R*r* SLD300 Series, this laser diode has a high brightness output with a doubled optical density which can be

FLD5F10NP

Abstract: 2296 VSC7989CD
Contextual Info: VSC7989 Data Sheet SONET/SDH 10.7Gb/s Electroabsorption Modulator/Laser Diode Driver FEATURES APPLICATIONS ● Rise and Fall Times Less Than 35ps ● SONET/SDH at 2.488Gb/s, 9.952Gb/s, 10.7Gb/s ● High-Speed Operation Up to 10.7Gb/s NRZ Data ● OC-192 Transponder Modules