LASER 790 NM Search Results

LD 7576 PS

Abstract: Laser Diode Frame Type ld 7576 DL-3180-121 3180 diode
Contextual Info: Ordering number : ENN7576 Infrared Laser Diode DL-3180-121 DL-3180-121 Infrared Laser Diode Frame Type Package Dimensions 1.75 3. 3 1.41 2.8 0.8 0.21 • Wavelength : 790 nm (Typ.) • Frame type • Ultra compact lightweight thin package • Straight leads

DL-3150-106

Abstract: Laser Diode Frame Type
Contextual Info: Ordering number : ENN7563 Infrared Laser Diode DL-3150-106 DL-3150-106 Infrared Laser Diode Frame Type Package Dimensions 5 3.2 -C 2- 0. 1.9 • Wavelength : 790 nm (Typ.) • Frame type • Compact lightweight thin package • Straight leads 0.7 0.7±0.12

Laser Diode Frame Type

Abstract: DL-3150-1 DL-3150-127 7569
Contextual Info: Ordering number : ENN7569 Infrared Laser Diode DL-3150-127 DL-3150-127 Infrared Laser Diode Frame Type 5 3.2 -C 2- 0. 1.9 • Wavelength : 790 nm (Typ.) • Low threshold current : Ith = 20 mA (Typ.) • Frame type • Ultra compact lightweight thin package

Laser Diode Frame Type

Abstract: DL-3150-107
Contextual Info: Ordering number : ENN7562 Infrared Laser Diode DL-3150-107 DL-3150-107 Infrared Laser Diode Frame Type 5 3.2 -C 2- 0. 1.9 • Wavelength : 790 nm (Typ.) • Frame type • Compact lightweight thin package • Straight leads 0.7 Package Dimensions 0.7±0.12

C 6090

Abstract: transistor c 6090 Laser Diode Frame Type DL-3150-103
Contextual Info: Ordering number : ENN6090A Infrared Laser Diode DL-3150-103 DL-3150-103 Infrared Laser Diode Frame Type 5 3.2 -C 2- 0. 1.9 • Wavelength : 790 nm (Typ.) • Frame type • Compact lightweight thin package • Straight leads 0.7 Package Dimensions 0.7±0.12

Laser Diode Frame Type

Abstract: DL-3150-105
Contextual Info: Ordering number : ENN7564 Infrared Laser Diode DL-3150-105 DL-3150-105 Infrared Laser Diode Frame Type Package Dimensions 5 3.2 -C 2- 0. 1.9 • Wavelength : 790 nm (Typ.) • Frame type • Compact lightweight thin package • Straight leads 0.7 0.7±0.12

LD 7575 PS

Abstract: Laser Diode Frame Type DL-3150-133 ENN7575 LD7575PS DSA001627
Contextual Info: Ordering number : ENN7575 Infrared Laser Diode DL-3150-133 DL-3150-133 Infrared Laser Diode Frame Type 5 3.2 -C 2- 0. 1.9 • Wavelength : 790 nm (Typ.) • Low threshold current : Ith = 20 mA (Typ.) • Frame type • Compact lightweight thin package • Straight leads

B1-81-60Q-49-50-A

Abstract: B1-81-100Q-60-90-A B1-81-70Q-60-90-A semiconductor A 6060 b1816
Contextual Info: 790 to 830 nm QCW Bars Laser Diodes Conduction-Cooled QCW Bars Conduction-cooled, quasi continuous wave QCW laser diode bars, based on our aluminum-free active area (AAA) technology, give you high power and long-life performance in the near-infrared wavelength range. The low divergence and narrow

RLT790-80MGS

Contextual Info: RLT790-80MGS TECHNICAL DATA High Power Infrared Laser Diode Features • • • • Lasing Mode Structure: single mode Peak Wavelength : typ. 790 nm Optical Output Power: 80 mW Package: 5.6 mm Electrical Connection Pin Configuration Bottom View n-type PIN

790nm

Abstract: DL-3180-121
Contextual Info: Infrared Laser Diode DL-3180-121 Features Tolerance : ±0.2 Unit : mm Package • Wavelength : 790 nm Typ. • Frame type : compact, light weight, thin package • Low threshold current : Ith = 20 mA (Typ.) • PIN photodiode built-in for light output monitor

DL-3150-133

Abstract: 790nm dl3150
Contextual Info: Infrared Laser Diode DL-3150-133 Features • Wavelength : 790 nm Typ. • Frame type : compact, lightweight, thin package • Output Pow er: 5mW • Low threshold current: Ith = 20 mA (Typ.) • PIN photodiode built-in for light output monitor Tolerance : ±0.2

laser 790 nm

Abstract: LiNbO3 phase modulator U25-A NIR-MPX800
Contextual Info: NIR-MPX800 800 nm Phase Modulator DESCRIPTION The NIR-LN modulators series is specially designed for operation in the Near InfraRed region; it offers to the engineers of emerging applications a choice of modulation devices comparable to what exists for the telecommunications and with bandwidths up to above

NIR-MPX800

Abstract: corning phase modulator corning optical phase modulator LiNbO3 phase modulator
Contextual Info: NIR-MPX800 800 nm Phase Modulator DESCRIPTION The NIR-LN modulators series is specially designed for operation in the Near InfraRed region; it offers to the engineers of emerging applications a choice of modulation devices comparable to what exists for the telecommunications and with bandwidths up to above

M9-785-0150-S5P

Abstract: M9-785-0150-S50 M9-785-0080-S50 c2785 785nm 785nm diode
Contextual Info: Product Specifications Features 785 nm Single-Mode Laser Diodes • Up to 150 mW CW output power. Description: • High Quality, Reliability, Performance High brightness, high quality, and high reliability are the foundation of our single mode product line. Axcel’s 785 nm single mode

Contextual Info: Features Product Specifications • Up to 1.4W CW output power 785 nm Multi-Mode 14-Pin Butterfly Module Laser Diodes • Come with internal thermistor, TEC, and photodiode • High Quality, Reliability, & Performance Applications • Raman Spectroscopy • Laser Pumping

fiber multi-mode power

Abstract: diode laser
Contextual Info: Product Specifications Features 785 nm Multi-Mode 14-Pin Butterfly Module Laser Diodes • Up to 1W CW output power • High Quality, Reliability, & Performance Applications Description: High brightness, high quality, and high reliability are the foundation of our multi mode product line. Axcel’s 785nm

Contextual Info: Laser Diodes QLF073A/QLF073D 785 nm FP LASER TO-CAN C00066-03 May 2012 1. DESCRIPTION The QLF073A/QLF073D are 785 nm quantum well laser devices designed for high output power application. The laser diode is mounted into a TO-56 header including a monitor PD and hermetic sealed with a flat glass cap.

SLD1139VS

Abstract: SLD136AVS SLD231AVS SLD268MS SLD267CQS SLD265ARP SLD1261 SLD231BVS sld1139 SLD265BRP
Contextual Info: HOME > Products Information List > Laser Diode > Laser Diodes f or Laser Printers/Digital Copiers Laser Diodes for Laser Printers/Digital Copiers Single beam Product na me Optica l Optica l Ope ra ting Ope ra ting output* 1 Poma x mW output* 2 Po (mW )

DL-7240-201S

Contextual Info: INFRARED LASER DIODE DL-7240-201S Ver.2 Oct. 2001 Features Tolerance : ± 0.2 Unit : mm Package • Wavelength : 785 nm (Typ.) • Low threshold current : Ith = 30 mA (Typ.) • High output power : 85mW (Pulse) at 60°C • D-type shape stem ø5.6-0.025

SLD301V

Abstract: SLD1332V sld333v SLD302V SLD322V SLD326YT SLD327YT SLD332V SLD334YT SLD335YT
Contextual Info: HOME > Products Information List > Laser Diode > Industrial Super High Power Laser Diodes Industrial Super High Power Laser Diodes Single Emitter Laser Product na me Ope ra ting te mpe ra ture * 1 Topr °C Optica l pow e r Optica l pow e r output* 1 Poma x (W )

SLD300

Abstract: SLD322V SLD322V-1 SLD322V-2 SLD322V-21 SLD322V-24 SLD322V-25 SLD322V-3
Contextual Info: SLD322V High Power Density 0.5W Laser Diode Description The SLD322V is a high power, gain-guided laser diode produced by MOCVD method∗1. Compared to the SLD300 Series, this laser diode has a high brightness output with a doubled optical density which can be

DL-7140-201S

Abstract: 201S 20angle 2 Wavelength Laser Diode
Contextual Info: INFRARED LASER DIODE DL-7140-201S Ver.2 Nov. 2002 Features Package Tolerance : ± 0.2 Unit : mm ø5.6 - 0.025 ø4.4 • Wavelength : 785 nm (Typ.) • Low threshold current : Ith = 30 mA (Typ.) • High operating temperature : 60°C at 70mW(CW) ø3.55± 0.1

DL-7140-201S

Abstract: 7587 infrared Laser diode
Contextual Info: Ordering number : ENN7587 Infrared Laser Diode DL-7140-201S DL-7140-201S Infrared Laser Diode Features Package Dimensions Tolerance : ±0.2 : mm • Wavelength : 785 nm Typ. • Low threshold current : Ith = 30 mA (Typ.) • High operating temperature : 70 mW (CW) at 60°C

808 nm 1000 mw

Abstract: 1000mW laser diode SLD300 SLD323V SLD323V-1 SLD323V-2 SLD323V-21 SLD323V-24 SLD323V-25 SLD323V-3
Contextual Info: SLD323V High Power Density 1W Laser Diode Description The SLD323V is a high power, gain-guided laser diode produced by MOCVD method∗1. Compared to the SLD300 Series, this laser diode has a high brightness output with a doubled optical density which can be