LAS 4400 Search Results

NL-4823

Abstract: semelec CHEROKEE INTERNATIONAL sunbank corp pr ste 1205 G Samsung Praha SRI Rev 1_0
Contextual Info: Fairchild Semiconductor World Wide Sales Offices AMERICAS MEXICO Fairchild Semiconductor Av. Vallarta #6503 Flr. 14 Col. Cd Granjas Zapopan Jalisco 45010 Mexico Tel: 52-3-1100017 Fax: 52-3-1101878 TEXAS Customer Response Center Fairchild Semiconductor 222 West Las Colinas Blvd., Ste. 380

ANTENA

Abstract: gsm 900 Antena GSM ANTENA antena gsm 3g antena antena umts transmisor RF PC CONECTOR placa universal SE 115
Contextual Info: 4916 Antenna Coupler Principales características • Solución 3G disponible para todo tipo de teléfonos móviles • Amplio rango de frecuencias para soportar futuras tecnologías • Resultados precisos mediante una excelente adaptación de RF • Buenos valores de acoplamiento para todos los teléfonos

antena microondas

Abstract: circuito sensor capacitivo Denso radar sensores capacitivos R2N P1F transistor A5E024 bocina transistor J1F LUT400 SENSORES INDUCTIVOS
Contextual Info: 4 Siemens AG 2014 Medida de nivel 4/2 Sinopsis de productos 4/9 Detección de nivel Sensores capacitivos Medición continua continuación Accesorios para sistemas ultrasónicos 4/185 – Bridas de fijación EA 4/187 – Soportes de montaje FMS 4/189 – Sensor de temperatura TS-3

potenciometro 100k lineal

Abstract: Linear Potentiometer 50k transformador chopper descargar vfd037e43a VFD015E43T VFD037E23A VFD075E43A como se mide un diodo transistor de induccion estatica
Contextual Info: Prefacio Gracias por elegir la Serie de alto rendimiento VFD-E de DELTA. La Serie VFD-E se fabrica con componentes y materiales de alta calidad e incorpora la más moderna tecnología disponible en microprocesadores. Se debe usar este manual para instalación, ajuste de parámetros, solución de problemas y

potenciometro 10k

Abstract: hexadecimal teclado transformador 220v a 12 v VFD007EL23A MANUAL variadores de frecuencia valores comerciales de resistencias VFD015EL21A manual Delta VFD022el21a potenciometro 47 K tegra 2
Contextual Info: Prólogo Gracias por elegir la serie VFD-EL multifunción DELTA. La Serie VFD-EL se fabrica con componentes y materiales de alta calidad e incorpora la más moderna tecnología disponible en microprocesadores Se debe usar este manual para la instalación, el ajuste de parámetros, la solución de problemas y el

Mallory Ignition

Contextual Info: FORM 1214M REV. J 09/03 INSTALLATION INSTRUCTIONS UNILITE DISTRIBUTOR This product is applicable to pre-1966 California and pre-1968 federally certified passenger cars. It is also applicable to non-emission controlled trucks and similar vehicles. It is not applicable or intended for use on

UPS SIEMENS

Abstract: SPW17N80C2 500 coolmos SPD01N60S5 SPN01N60S5 A1040 to-252 SPN04N60C2 Infineon CoolMOS SPU01N60S5 SPD02N60S5
Contextual Info: C o o l M O S TM C 2 COOL & FAST C o o l M O S TM C 2 the second generation www.infineon.com Never stop thinking. C o o l M O S TM C 2 the second generation Infineon’s introduction of the 600V CoolMOSTM C2 technology is a breakthrough design for power conversion systems such as

condensador 104

Abstract: A185-30-11 rele termico bobina variable diodo potencia diodo de potencia 2000 A AF460-30-11 a7530 BOBINAS DIODO rectificador
Contextual Info: Contactores Minicontactores Relés térmicos Arrancadores Índice 1 Panoramas de gama . Contactores compactos. Mando por c.a. y por c.c. .

DIRIS A40

Abstract: transformador transformador 120 v a 24 v DIRIS C fonction iec 62053-21 3 FASE WIRE a40 diris 3NBL socomec iec 62053-21 kwh
Contextual Info: 876_304_a 23/12/04 12:24 Page 1 DIRIS A40/A41 Notice d’utilisation Operating instructions - Bedienungsanleitung Istruzioni per l’uso - Gebruiksaanwijzing Instrucciones de servicio - Manual de instruções F GB SOCOMEC GROUP SWITCHING PROTECTION & UPS D

Contextual Info: FSJ260D, FSJ260R 39 Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs june 1997 Features Description • 44A, 200V, ros O N = 0.050Q The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space

Contextual Info: FSJ264D, FSJ264R 39 Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Features • Description 33A, 250V, rDS 0N = 0.080Q • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects

Contextual Info: Œ M A FSJ264D, FSJ264R 33A, 250V, 0.080 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 33A, 250V, rDS 0N = 0.0800 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

Contextual Info: FSJ260D, FSJ260R 44A, 200V, 0.050 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 44A, 200V, rDS 0N = 0.050Q The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for comm ercial and m ilitary space

Contextual Info: Scotch ATG 700 Adhesive Applicator, Type 20900 Aplicador de cinta, Tipo 20900 Applicateur d’Adhésif, Type 20900 Aplicador adesivo, Tipo 20900 Scotch® # ATG Tape Applies adhesive while removing/rewinding liner. U.S.A. Metric 908, 924, 976 1/2 in. x 36 yd.

Contextual Info: CO LO 36.80 o o AMR LOGO 32. 51 A RO. 64 r _ 27.43 i i L D o o CO CT) o LO OD 2 PLC RECOMMENDED PANEL CUTOUT NOTE : 32 .51 T H E R N B P L A S T I C , UL 9 4 V - 0 , CBLBR: WHITE, 2, CENT A C T : PHESPHER BRENZE, PLATING ! GELD (SEE TABLE) EVER 50u' MIN, NICKEL

Contextual Info: FSYC160D, FSYC160R Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs July 1998 Features Description . 70A, 100V, rDS 0 N = 0.022£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space

Contextual Info: FSYC160D, FSYC160R Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs juiy 1998 Features Description • 70A, 100V, ros ON = 0-022Q T he D iscrete P roducts O peration of H arris S e m icon ducto r has developed a se rie s o f R adiation H ardened M O S FE T s

Contextual Info: FSJ264D, FSJ264R S em iconductor 33A, 250V, 0.080 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 33A, 250V, i"[ s ON) = 0.080£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

Contextual Info: FSJ260D, FSJ260R S e m iconductor 44A, 200V, 0.050 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 44A, 200V, rQs^oN = 0.050£2 The D iscrete Products Operation of Harris Sem iconductor has developed a series of R adiation Hardened M O SFETs

TWIN TRIODE power

Abstract: RK34 RK-34 CS-1066 TWIN TRIODE
Contextual Info: RAYTHEON RK-34 AMATEUR TW IN TRIODE POWER AM PLIFIER OSCILLATOR TUBES RK-34 A -F POWER A M PLIFIER— CLASS B T he R K -3 4 is a heater type tw in triode power a m p lifie r tube having an isolantite base. It is designed for use as a pow er am p lifier, o scillato r

foster 81 - 80

Abstract: foster 81 - 22 sp 98034
Contextual Info: Document 165-1 Sales Offices and Representatives D English Damco Sales Co. 6841 S. Yosemite St. Suite 3B Englewood CO 80112 Rick Masterson 303/790-2211 Ext. 11 Fax 303/790-2230 edrm1@aol.com E Coilcraft, Inc. Jodi Tucker 888/441-3575 Fax 888/441-3573 jtucker@coilcraft.com

foster 81 - 22

Abstract: max 8770 SE161 LAS 2112 4848 AU 733-364 ave maria nielsen 194-0045 crabtree
Contextual Info: Document 165-1 Sales Offices and Representatives D English Damco Sales Co. 6841 S. Yosemite St. Suite 3B Englewood CO 80112 Rick Masterson 303/790-2211 Ext. 11 Fax 303/790-2230 edrm1@aol.com E Coilcraft, Inc. Jodi Tucker 888/441-3575 Fax 888/441-3573 jtucker@coilcraft.com

FSj264

Contextual Info: FSJ264D, FSJ264R HARRIS S E M I C O N D U C T O R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs February 1998 Features • Description The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

76143S

Abstract: 76143P Harris 76143p
Contextual Info: HUF76143P3, HUF76143S3, HUF76143S3S Semiconductor November 1998 Data Sheet 75A, 30V, 0.0055 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology