LAH 1V Search Results

AV13H

Abstract: 3A331
Contextual Info: •3vr •* cm ! H 9l 3 M ) g g CA3d ) ( 'ON OOVXOVd SlUVd H3 H10 3H1 Oflld AV13H) QNIMVHQ) fris o L8Hla r ê is o LaH lar •an ‘ A ü i s n a N I & \ f é f S0I N0H10313 \ J y 3Wi nvN‘w ’QddV OVNVN'S OddV m •>H0 SIS •ya vynwvwi (3 1 1 1 1 ) % ^

VCE6887VFE

Contextual Info: 642-+ ?A0:7;7/@A>3 ?75;/9 >39/D 4IEUVSIT ] O_^kl ^q\^ee^gm [hZk] liZ\^ lZobg`l ] Snk`^ pbmalmZg] ohemZ`^ ni mh 8<77V3 ] ] ] ] ] ] Hbe^ Nh5AG8:;?8 16/>/1@3>7?@71? 1<;@/1@ 2/@/ 9E EhgmZ\m ZkkZg`^f^gm KglneZmbhg k^lblmZg\^ Sbeo^k Zeehr2Ihe] \eZ] EhgmZ\m fZm^kbZe

GHM 5

Abstract: EZ 642
Contextual Info: 642-+ ?A0:7;7/@A>3 ?75;/9 >39/D 4IEUVSIT ] O_^kl ^q\^ee^gm [hZk] liZ\^ lZobg`l ] Snk`^ pbmalmZg] ohemZ`^ ni mh 8<77V3 ] ] ] ] ] ] Hbe^ Nh5AG8:;?8 16/>/1@3>7?@71? 1<;@/1@ 2/@/ 9E EhgmZ\m ZkkZg`^f^gm EhgmZ\m k^lblmZg\^ 877f fZq5 0Zm 758C =VFE1 EhgmZ\m fZm^kbZe

Contextual Info: 642-+ ?A0:7;7/@A>3 ?75;/9 >39/D 4IEUVSIT \ O_^kl ^q\^ee^gm [hZk] liZ\^ lZobg`l \ Snk`^ pbmalmZg] ohemZ`^ ni mh 8<77V3 \ \ \ \ \ \ Hbe^ Nh5AG8:;?8 16/>/1@3>7?@71? 1<;@/1@ 2/@/ 9E EhgmZ\m ZkkZg`^f^gm EhgmZ\m k^lblmZg\^ 877f fZq5 0Zm 87fC :7fVFE1 EhgmZ\m fZm^kbZe

laf 0001

Abstract: ic laf 0001 PWM Control ic laf 0001 oscillator ic laf 0001 laf 0001 analog laf 0001 ic laf 001 LQM2HPN1R0M LQM31PN1R0M laf 0001 PWM Control
Contextual Info: ৆ٙ႙Ă600mAĂ3MHzĂ ইუDC-DCገ࣑ഗ ADP2108  ዷᄲ༬Ⴀ ߁ຎ ‫ރ‬ኵၳ୲ǖ 95% ADP2108๟ᅃ੼ߛၳ୲Ă‫ৢگ‬ༀ‫ୁۉ‬ĂইუDC-DCገ࣑ 3 MHzࠦۨ߾ፕೕ୲ ഗLj༵ࠃଇዖփཞ‫ހ‬ጎăኝ߲঴ਦ‫ݛ‬ӄৈႴෙ߲ၭ႙ྔև

023M02

Abstract: 23/01-X-V
Contextual Info: KM736V787 PRELIMINARY 128Kx36 Synchronous SRAM Document Title 128Kx36-Bit Synchronous Burst SRAM Rev. No. H istory Draft Date 0.0 Initial draft May. 15. 1997 0.1 Modify power down cycle timing & Interleaved read timing, Feb. 11. 1998 Rem ark Insert Note 4 at AC timing characteristics.

Contextual Info: fax id: 1087 CY61257 256K RAM/2M ROM that reduces power consumption by more than 99% when de­ selected. Featu res • 1.8V-3.3V operation • 32K x 8 RAM and 256K x 8 Mask ROM combination memory • ROM speed — 250 ns Reading from the RAM is accomplished by taking RAMCS and

Contextual Info: m U U HI-524 HARRIS SEMICONDUCTOR 4 Channel Wideband and Video Multiplexer December 1993 Features Description • • • • The HI-524 is a four channel CMOS analog multiplexer designed to process single-ended signals with bandwidths up to 10MHz. The chip includes a 1 of 4 decoder for channel selection

M/H11-0524-5

Contextual Info: H A R R IS H S E M I C O N D U C T O R M MM I 9 V * i 4 I 4 Channel Wideband and Video Multiplexer December 1993 Features Description • • • • The HI-524 is a four channel CMOS analog multiplexer designed to process single-ended signals with bandwidths up to

HI302

Contextual Info: H I-3 0 2 /Q Q 3 h a r r is Dual DPST CMOS Analog Switch January 19 89 Features Description • This Circuit Is Processed In Accordance to M il-S td883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HI-302/883 sw itch is a m o nolithic device fabricated

Contextual Info: KM64V1003B CMOS SRAM Document Title 256Kx4 Bit with OE High Speed Static RAM(3.3V Operating), Revolutionary Pin out. Revision History RevNo. History Rev. 0.0 Initial release with Design Target. Apr. 1st, 1997 Design Target Rev.1.0 Release to Preliminary Data Sheet.

PM7628

Contextual Info: PM-7628/883 DUAL 8-BIT BUFFERED MULTIPLYING CMOS D/A CONVERTER Pre cisio n M o n o li th ic '' Inc. 1.0 SCOPE 1.1 Scope. This specification covers the detail requirements for a monolithic dual 8-bit digital-toanalog converter with on-chip latches for each DAC to allow easy microprocessor interface.

Contextual Info: |U |IC R O N 128K SRAM MODULE X MT4S12832 32 SRAM MODULE 128Kx 32 SRAM FEATURES • High speed: 15, 20 and 25ns • High-density 512KB design • High-perform ance, low-power, CM OS double-m etal process _ • Single +5V ±10% pow er supply • Easy m emory expansion w ith CE and OE functions

Contextual Info: a A U S T I N S F M I C O M M C T O R . INC SRAM MT5C1001 8 8 3 C X 1 SRAM 1 MEG X 1 SRAM AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT Top View 00 CM • M IL-STD -883, Class B • Radiation tolerant (consult factory) FEATURES A io AH A12 A13 AU A15

Contextual Info: Compact, 600 mA, 3 MHz, Step-Down DC-to-DC Converter ADP2108 Data Sheet FEATURES GENERAL DESCRIPTION Peak efficiency: 95% 3 MHz fixed frequency operation Typical quiescent current: 18 A Maximum load current: 600 mA Input voltage: 2.3 V to 5.5 V Uses tiny multilayer inductors and capacitors

Supply Control LAF 0001

Abstract: laf 0001 laf 0001 power ic laf 0001 laf 001 ic laf 0001 PWM Control ADP2108 laf 0001 analog laf 0001 PWM Control GRM188R60J106
Contextual Info: Compact, 600 mA, 3 MHz, Step-Down DC-to-DC Converter ADP2108 FEATURES GENERAL DESCRIPTION Peak efficiency: 95% 3 MHz fixed frequency operation Typical quiescent current: 18 A Maximum load current: 600 mA Input voltage: 2.3 V to 5.5 V Uses tiny multilayer inductors and capacitors

Contextual Info: Compact, 600 mA, 3 MHz, Step-Down DC-to-DC Converter ADP2108 Data Sheet FEATURES GENERAL DESCRIPTION Peak efficiency: 95% 3 MHz fixed frequency operation Typical quiescent current: 18 A Maximum load current: 600 mA Input voltage: 2.3 V to 5.5 V Uses tiny multilayer inductors and capacitors

Harris DG303

Abstract: HI-3001 HI-383 HI-303 HL30
Contextual Info: H arris HARRIS SEMICOND SECTOR 10E $ | 43Q2571 001 34S5 3 | HI-303/883 , . T-51-11 Dual SPDT CMOS Analog Switch January 1989 Features Description • This Circuit Is Processed In Accordance to Mll-Std883 and Is Fully Conformant Under the Provisions of Paragraph 1.2.1.

310241

Abstract: A83Z
Contextual Info: High Performance •■ AS7C3 1024 128KX8 3.3V II AS7C31024L CMOS SRAM @ Low voltage 128KX8 CMOS SRAM C o m m o n I / O Features • O r g a n iz a tio n : 1 3 1 ,0 7 2 w o r d s x 8 b its • E q u a l a c c e ss a n d c y c le tim e s • S in g le 3 .3 + 0 .3 V p o w e r s u p p ly

Supply Control LAF 0001

Abstract: laf 0001 ic laf 0001 PWM Control ic laf 0001 laf 0001 power adp2108 laf 001 ADP2108ACBZ-1.0-R7 laf 0001 analog WLCSP chip mount
Contextual Info: Compact, 600 mA, 3 MHz, Step-Down DC-to-DC Converter ADP2108 FEATURES GENERAL DESCRIPTION Peak efficiency: 95% 3 MHz fixed frequency operation Typical quiescent current: 18 A Maximum load current: 600 mA Input voltage: 2.3 V to 5.5 V Uses tiny multilayer inductors and capacitors

Supply Control LAF 0001

Abstract: ic laf 0001 PWM Control ic laf 0001 laf 0001 power oscillator ic laf 0001 laf 0001 laf 0001 analog adp2108 laf 0001 ic branding lad
Contextual Info: Compact, 600 mA, 3 MHz, Step-Down DC-to-DC Converter ADP2108 Data Sheet FEATURES GENERAL DESCRIPTION Peak efficiency: 95% 3 MHz fixed frequency operation Typical quiescent current: 18 A Maximum load current: 600 mA Input voltage: 2.3 V to 5.5 V Uses tiny multilayer inductors and capacitors

Supply Control LAF 0001

Abstract: laf 0001 laf 0001 analog ic laf 0001 PWM Control adp2108 ic laf 0001 laf 0001 power oscillator ic laf 0001 branding lad C1608JB0J106K
Contextual Info: Compact, 600 mA, 3 MHz, Step-Down DC-to-DC Converter ADP2108 Data Sheet FEATURES GENERAL DESCRIPTION Peak efficiency: 95% 3 MHz fixed frequency operation Typical quiescent current: 18 A Maximum load current: 600 mA Input voltage: 2.3 V to 5.5 V Uses tiny multilayer inductors and capacitors

Contextual Info: ¡E H " » » D G 408, D G 409 Single 8-Channel/Differential 4-Channel CMOS Analog Multiplexers D ecem ber 1 99 3 Features Description • ON-Resistance 100ft Maximum +25°C T h e D G 4 0 8 Single 8-C h an nel and D G 4 0 9 Differential 4C hannel monolithic C M O S analog multiplexers are drop-in

Contextual Info: ¡B ««S DG408, DG409 Single 8-Channel/Differential 4-Channel CMOS Analog Multiplexers December 1993 Features Description • ON-Resistance 100Q Maximum +25°C The DG408 Single 8-Channel and DG409 Differential 4Channel monolithic CMOS analog multiplexers are drop-in